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10 Aug 1998

Volume 73, Issue 6, pp. 705-858

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Adaptive correlation filter for stabilization of interference-fiber-optic sensors

Alexei A. Kamshilin, Timo Jaaskelainen, and Yuri N. Kulchin

Appl. Phys. Lett. 73, 705 (1998); http://dx.doi.org/10.1063/1.121974 (3 pages) | Cited 7 times

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A type of adaptive correlation filter for processing the speckle pattern emerging from an interference fiber-optic sensor is proposed. This filter is simple and self-adjustable, operating on the base of the photorefractive fanning effect. Experiments carried out with a Bi12TiO20 crystal and multimode optical fiber demonstrate high sensitivity and long-term stability of the sensor. © 1998 American Institute of Physics.
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42.81.Pa Sensors, gyros
07.60.Ly Interferometers
07.60.Vg Fiber-optic instruments
42.30.Ms Speckle and moiré patterns
42.30.-d Imaging and optical processing
42.79.Ci Filters, zone plates, and polarizers
42.70.Gi Light-sensitive materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Stimulated emission from vacuum-deposited thin films of a substituted oligo(p-phenylene vinylene)

Hendrik-Jan Brouwer, Victor V. Krasnikov, Thuy-Anh Pham, Richard E. Gill, and Georges Hadziioannou

Appl. Phys. Lett. 73, 708 (1998); http://dx.doi.org/10.1063/1.121975 (3 pages) | Cited 11 times

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The influence of the morphology on the light emission properties of vacuum-deposited polycrystalline oligo(p-phenylene vinylene) thin films under intense laser excitation was studied. The morphology of the thin films was varied by annealing just below the first melting point (crystal-mesophase transition) and by crystallization from the isotropic melt. Amplified spontaneous emission occurred within the individual domains and was only observed when the domain size was increased by thermal treatment. The amplified spontaneous emission threshold for the melt-crystallized thin films was found to be comparable to that for conjugated polymer thin films. © 1998 American Institute of Physics.
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78.45.+h Stimulated emission
78.66.Qn Polymers; organic compounds

Design and simulation of low-threshold antimonide intersubband lasers

I. Vurgaftman, J. R. Meyer, F. H. Julien, and L. R. Ram-Mohan

Appl. Phys. Lett. 73, 711 (1998); http://dx.doi.org/10.1063/1.121976 (3 pages) | Cited 35 times

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Optically and electrically pumped infrared lasers based on intersubband transitions in InAs/GaSb/AlAsSb quantum wells are modeled in detail. The large conduction-band offset of the AlAsSb barriers with respect to the InAs wells allows the lasing wavelength to be shortened to at least 1.9 μm. Furthermore, the small InAs electron mass results in longer phonon-limited lifetimes in the upper lasing subband as well as larger dipole matrix elements. This leads to the prediction of lower threshold currents, and hence, higher cw operating temperatures than for quantum cascade lasers based on the InGaAs/InAlAs/InP system. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Ultraviolet single-frequency pulses with 110 mW average power using frequency-converted passively Q-switched miniature Nd:YAG ring lasers

M. Bode, S. Spiekermann, C. Fallnich, H. Welling, and I. Freitag

Appl. Phys. Lett. 73, 714 (1998); http://dx.doi.org/10.1063/1.121977 (3 pages) | Cited 1 time

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We demonstrate a compact source of ultraviolet single-frequency pulses with high average output power realized by subsequent single-pass frequency doubling and quadrupling of a diode-pumped passively Q-switched miniature Nd:YAG ring laser. Pulse widths of 2 ns (full width at half maximum), 20 μJ single pulse energy, and 10 kW peak power are achieved at a wavelength of 266 nm with kilohertz repetition rates. A single-pass energy conversion efficiency of 22% with respect to the fundamental light at 1064 nm and an overall efficiency of 2.8% with respect to the diode pump power are obtained. © 1998 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Xi Diode-pumped lasers

Noise characteristics of 850 nm single-mode vertical cavity surface emitting lasers

D. Wiedenmann, P. Schnitzer, C. Jung, M. Grabherr, R. Jäger, R. Michalzik, and K. J. Ebeling

Appl. Phys. Lett. 73, 717 (1998); http://dx.doi.org/10.1063/1.121978 (3 pages) | Cited 15 times

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We have measured the noise characteristics of single-mode oxide confined surface emitting vertical cavity laser diodes. For pumping levels of more than 3.5 times threshold current, the relative intensity noise is below −150 dB/Hz up to 5 GHz at output powers near 1 mW. For various frequencies, we observe sub-Poissonian noise. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Mi Dynamical laser instabilities; noisy laser behavior
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Time-domain analysis of frequency modulation laser oscillation

Stefano Longhi and Paolo Laporta

Appl. Phys. Lett. 73, 720 (1998); http://dx.doi.org/10.1063/1.121979 (3 pages) | Cited 13 times

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A simple analytical model of frequency-modulation (FM) laser operation is proposed in terms of a master equation time-domain description. The analysis is capable of capturing the main experimental features of FM oscillation, including the dependence of modulation depth on cavity parameters, distortion effects induced by finite cavity gain bandwidth, and transition to FM mode-locking operation. Experimental results for a FM erbium–ytterbium–glass laser show good agreement with the theoretical predictions. © 1998 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking

Terahertz emission of population-inverted hot-holes in single-crystalline silicon

E. Bründermann, E. E. Haller, and A. V. Muravjov

Appl. Phys. Lett. 73, 723 (1998); http://dx.doi.org/10.1063/1.121980 (3 pages) | Cited 6 times

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We report THz emission of hot-holes in p-type silicon doped with a boron acceptor concentration of NA = 1.5×1015 cm−3. We apply crossed electric (E) and magnetic (B) fields to the crystal cooled to liquid helium temperature. Optical gain is found for field ratios E/B in the range 0.5–1 kV cm−1 T−1. We calculate optical gain spectra in Si and identify possible laser transitions. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
42.55.Ah General laser theory

Mode selectivity study of vertical-cavity surface-emitting lasers

G. Liu, J.-F. Seurin, S. L. Chuang, D. I. Babic, S. W. Corzine, M. Tan, D. C. Barnes, and T. N. Tiouririne

Appl. Phys. Lett. 73, 726 (1998); http://dx.doi.org/10.1063/1.121981 (3 pages) | Cited 13 times

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Mode selectivity of an air-post index-guided vertical-cavity surface-emitting laser structure operating at 1550 nm is investigated using a full-vector Maxwell-equation solver with a finite-difference time-domain method. The resonance wavelengths, quality factors, and spatial field distributions are calculated for the three lowest-order modes. Transverse-mode competition is quantitatively described as a function of the cavity size and the pillar etch depth. © 1998 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
02.70.Bf Finite-difference methods

Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material

J. Blochwitz, M. Pfeiffer, T. Fritz, and K. Leo

Appl. Phys. Lett. 73, 729 (1998); http://dx.doi.org/10.1063/1.121982 (3 pages) | Cited 183 times

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We show that doping of the transport layers can strikingly improve the properties of organic light emitting diodes (OLEDs). The electroluminescence onset voltage of diodes containing an vanadyl–phthalocyanine (VOPc) hole transport layer intentionally doped with tetrafluorotetracyano-quinodimethan (F4-TCNQ) is reduced by up to an order of magnitude compared to OLED with undoped VOPc. The improved properties of our devices can be explained by the improved conductivity and better injection for a doped transport layer. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Current heating in polymer light emitting diodes

N. Tessler, N. T. Harrison, D. S. Thomas, and R. H. Friend

Appl. Phys. Lett. 73, 732 (1998); http://dx.doi.org/10.1063/1.121983 (3 pages) | Cited 53 times

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We present an investigation of current-induced heating in polymer light emitting diodes. Using short electrical pulse measurements, we were able to quantify the temperature rise in the active region. We consider that heating effects play a major role in limiting the maximum efficiency of devices and in initiating degradation mechanisms. Heating and heat sinking are also discussed in the context of electrically pumped polymer lasers. © 1998 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.55.Rz Doped-insulator lasers and other solid state lasers

Detection of single infrared, optical, and ultraviolet photons using superconducting transition edge sensors

B. Cabrera, R. M. Clarke, P. Colling, A. J. Miller, S. Nam, and R. W. Romani

Appl. Phys. Lett. 73, 735 (1998); http://dx.doi.org/10.1063/1.121984 (3 pages) | Cited 5 times

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We have demonstrated the use of superconducting transition edge sensors for the wide-band detection of individual photons from the mid infrared (IR), through the optical, and into the far ultraviolet (UV). These tungsten transition edge sensors are squares about 18 μm on a side and detect single photon events above a threshold of 0.3 eV (4 μm wavelength), with an energy resolution of 0.15 eV full width at half maximum, and with a risetime (falltime) of .5 μs (60 μs). The calibration data extend up to the UV cutoff of the fiber optic feed at 3.5 eV (350 nm). © 1998 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors

Frequency doubling in gallium–lanthanum–sulphide glass with surface crystallized Ga6La10/3S14 thin films

Yong Ding, Atsuhiro Kondoh, Yoshinari Miura, and Tokuro Nanba

Appl. Phys. Lett. 73, 738 (1998); http://dx.doi.org/10.1063/1.121985 (3 pages) | Cited 2 times

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The reason for the optical frequency doubling in the 70Ga2S3–30La2S3 glass is investigated. The tetragonal Ga6La10/3S14 phase due to crystallization of the glass is responsible for the frequency doubling. Dense and transparent Ga6La10/3S14 crystalline thin films have been prepared by means of the controlled surface treatment of the glass due to an ultrasonic surface treatment. The effective second-order nonlinear optical susceptibilities of the crystalline thin films are analyzed. © 1998 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability
68.35.Rh Phase transitions and critical phenomena
61.43.Fs Glasses
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Micromachinable ultrasonic leaky wave air transducers

F. Levent Degertekin, Abdullah Atalar, and Butrus T. Khuri-Yakub

Appl. Phys. Lett. 73, 741 (1998); http://dx.doi.org/10.1063/1.121986 (3 pages)

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Ultrasonic air transducers using leaky waves on thin membranes are analyzed using perturbation and normal mode approaches. The transducers utilize the efficient coupling of ultrasonic energy to air through radiation of these leaky wave modes when their phase velocity is close to the sound speed in air. Theoretical results on optimum transducer dimensions and bandwidth estimation show that a minimum conversion loss of 8.7 dB with a 78% fractional bandwidth is possible. Common micromachining materials are shown to be suitable transducer materials and result in feasible devices. This is demonstrated by fabricating a 580 kHz transducer using a silicon membrane bonded to a ring of PZT-5H. With this configuration the transducer is self line focusing. Results of through transmission experiments on silicon and transmission images on paper are reported. © 1998 American Institute of Physics.
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43.38.Gy Semiconductor transducers
07.10.Cm Micromechanical devices and systems
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Ferromagnetic Co–Fe–Zr–B amorphous alloys with glass transition and good high-frequency permeability

Akihisa Inoue, Hisato Koshiba, Takaomi Itoi, and Akihiro Makino

Appl. Phys. Lett. 73, 744 (1998); http://dx.doi.org/10.1063/1.121987 (3 pages) | Cited 38 times

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A Co-based amorphous phase with glass transition and supercooled liquid region before crystallization was formed in Co70−xFexZr10B20 and Co72−xFexZr8B20 alloys containing more than 14 at % Fe. The crystallization temperature (Tx) is 899 K for the Co–Zr–B alloys and remains unchanged in the Fe concentration range up to 20%. The glass transition temperature (Tg) decreases with increasing Fe content, and the ΔTx( = Tx−Tg) increases from 25 K at 14% Fe to 34 K at 21% Fe. The amorphous alloys with glass transition crystallize with a single stage precipitation of bcc Fe(Co) and Co3ZrB2 phases. The Co-rich amorphous alloys exhibit good soft magnetic properties, i.e., saturation magnetization of 0.58–0.83 T, low coercivity of 4.7–8.3 A/m, and high permeability of 5500–18 300 in the frequency range of 1–103 kHz and low magnetostriction between −1.5×10−6 and +10×10−6 including zero. The success in synthesizing the soft magnetic amorphous alloys with high stability of supercooled liquid is promising for the future development of ferromagnetic Co-based bulk amorphous alloys. © 1998 American Institute of Physics.
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75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Bb Fe and its alloys
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
75.80.+q Magnetomechanical effects, magnetostriction

Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition

H. Marchand, X. H. Wu, J. P. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra

Appl. Phys. Lett. 73, 747 (1998); http://dx.doi.org/10.1063/1.121988 (3 pages) | Cited 116 times

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Extended defect reduction in GaN grown by lateral epitaxial overgrowth (LEO) on large-area SiO2/GaN/Al2O3 wafers by low pressure metalorganic chemical vapor deposition is characterized using transmission electron microscopy and atomic force microscopy. The laterally overgrown GaN (LEO GaN) has a rectangular cross section with smooth (0001) and {11math0} facets. The density of mixed-character and pure edge threading dislocations in the LEO GaN (<5×106 cm−2) is reduced by at least 3–4 orders of magnitude from that of bulk GaN ( ∼ 1010 cm−2). A small number of edge dislocations with line directions parallel to the basal plane are generated between the bulk-like overgrown GaN and the LEO GaN regions as well as at the intersection of adjacent merging LEO GaN stripes. The edge dislocations are most likely generated to accommodate the small misorientation between bulk-like GaN and LEO GaN regions as well as between adjacent single-crystal LEO GaN stripes. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
61.72.Lk Linear defects: dislocations, disclinations

Graphoepitaxial NiTi shape memory thin films on Si

Quanmin Su, Yun Zheng, and Manfred Wuttig

Appl. Phys. Lett. 73, 750 (1998); http://dx.doi.org/10.1063/1.121989 (3 pages) | Cited 1 time

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Graphoepitaxial Ni50Ti50 films were grown on Si substrates by sputter deposition of an alloy target. The microstructure evolution of the film was investigated by hot stage atomic force microscopy. The topological features of the martensitic graphoepitaxial Ni50Ti50 films are directly associated with etch pits on the surface of the silicon substrate and exhibit facets with well-defined preferential in-plane orientation. The highly ordered martensitic facets disappear as the film transforms to austenite at elevated temperatures. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
62.20.F- Deformation and plasticity
64.70.K- Solid-solid transitions
81.30.Kf Martensitic transformations
81.40.Lm Deformation, plasticity, and creep
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.05.Cy Elemental semiconductors

Kinetics of strain relaxation through misfit dislocation formation in the growth of epitaxial films on compliant substrates

Dimitrios Maroudas, Luis A. Zepeda-Ruiz, and W. Henry Weinberg

Appl. Phys. Lett. 73, 753 (1998); http://dx.doi.org/10.1063/1.121990 (3 pages) | Cited 16 times

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A phenomenological mean-field theory is presented for the kinetics of strain relaxation due to misfit dislocation generation in the strained-layer growth of epitaxial semiconductor films on thin compliant substrates. The theory provides a generalized dislocation kinetic framework by coupling the mechanics of an epitaxial film on a compliant substrate with a well-known description of plastic deformation dynamics in semiconductor crystals. The theoretical results reproduce successfully recent experimental data for strain relaxation in the InAs/GaAs(110) heteroepitaxial system. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Lk Linear defects: dislocations, disclinations
62.20.F- Deformation and plasticity

Local variation of room-temperature thermal conductivity in high-quality polycrystalline diamond

M. Reichling, T. Klotzbücher, and J. Hartmann

Appl. Phys. Lett. 73, 756 (1998); http://dx.doi.org/10.1063/1.121991 (3 pages) | Cited 6 times

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Local thermal conductivity inside grains of high-quality polycrystalline diamond grown by chemical vapor deposition is measured at room temperature with micrometer spatial resolution. An effective conductivity is determined by choosing experimental conditions where the measured heat flow extends over adjacent grains. It is found that the effective conductivity may vary by a factor of 2, depending on the averaged volume and position on the sample. These variations are attributed to different grain structures present at the investigated locations. Local conductivity within a single grain varies by ±30% and a maximum value of 2350 W/mK is found. Local thermal conductivity data are related to the crystalline quality and impurity content determined by micro-Raman measurements. © 1998 American Institute of Physics.
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81.05.ub Fullerenes and related materials
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.72.Mm Grain and twin boundaries

Amorphous-tetrahedral diamondlike carbon layered structures resulting from film growth energetics

M. P. Siegal, J. C. Barbour, P. N. Provencio, D. R. Tallant, and T. A. Friedmann

Appl. Phys. Lett. 73, 759 (1998); http://dx.doi.org/10.1063/1.121992 (3 pages) | Cited 42 times

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High-resolution transmission electron microscopy (HRTEM) shows that amorphous-tetrahedral diamondlike carbon (a-tC) films grown by pulsed-laser deposition on Si(100) consist of three-to-four layers, depending on the growth energetics. We estimate the density of each layer using both HRTEM image contrast and Rutherford backscattering spectrometry. The first carbon layer and final surface layer have relatively low density. The bulk of the film between these two layers has higher density. For films grown under the most energetic conditions, there exists a superdense a-tC layer between the interface and bulk layers. The density of all four layers, and the thickness of the surface and interfacial layers, correlate well with the energetics of the depositing carbon species. © 1998 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
61.43.Er Other amorphous solids

Effects of precipitate distribution on electromigration in Al–Cu thin-film interconnects

J. H. Han, M. C. Shin, S. H. Kang, and J. W. Morris

Appl. Phys. Lett. 73, 762 (1998); http://dx.doi.org/10.1063/1.121993 (3 pages) | Cited 8 times

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This letter reports that electromigration lifetimes of Al–2Cu (wt. %) thin-film conducting lines increase by more than three times when the lines are optimally aged to facilitate finely dispersed Al2Cu precipitates in the interior of the grains. In contrast to other studies which did not report a beneficial aging effect for Al–Cu films, the present work substantiates the fact that proper control of Al2Cu precipitates improves resistance to electromigration failure. However, the benefit of aging the Al-2Cu lines investigated here was less pronounced and confined to a more narrow heat-treatment “window” than that previously found for the Al–2Cu–1Si lines. © 1998 American Institute of Physics.
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73.61.At Metal and metallic alloys
85.40.Ls Metallization, contacts, interconnects; device isolation
64.75.-g Phase equilibria
81.30.Mh Solid-phase precipitation
66.30.Qa Electromigration

Confocal Raman spectroscopic observation of hexagonal diamond formation from dissolved carbon in nickel under chemical vapor deposition conditions

Mikka Nishitani-Gamo, Isao Sakaguchi, Kian Ping Loh, Hisao Kanda, and Toshihiro Ando

Appl. Phys. Lett. 73, 765 (1998); http://dx.doi.org/10.1063/1.121994 (3 pages) | Cited 5 times

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We have studied nucleation and growth of diamond on nickel substrate by microwave plasma assisted chemical vapor deposition followed by in situ carbon–hydrogen solution treatment. The Raman depth profiles of isolated diamond crystals on the (100) and (111) surfaces were measured by confocal Raman spectroscopy. In the case of the crystals having the [111] growth direction, the 1332 cm−1 diamond peak was observed near the diamond–nickel interface and it shifted 1323 cm−1 towards the surface. The 1323 cm−1 peak may be assigned to “hexagonal diamond.” The in-depth spectral change from cubic to hexagonal was observed in chemical vapor deposited diamond crystals. The chemical and/or structural effects of nickel substrate for dissolved carbon are essential for specific diamond crystallization. © 1998 American Institute of Physics.
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81.05.ub Fullerenes and related materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Cy Elemental semiconductors
78.30.Na Fullerenes and related materials
68.55.-a Thin film structure and morphology
78.30.Am Elemental semiconductors and insulators
78.66.Tr Fullerenes and related materials
78.66.Db Elemental semiconductors and insulators

Second-harmonic generation from needlelike ferroelectric domains in Sr0.6Ba0.4Nd2O6 single crystals

Satoru Kawai, Tomoya Ogawa, Howard S. Lee, Robert C. DeMattei, and Robert S. Feigelson

Appl. Phys. Lett. 73, 768 (1998); http://dx.doi.org/10.1063/1.121995 (3 pages) | Cited 62 times

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Since Sr0.6Ba0.4Nb2O6 (SBN) is ferroelectric with a tungsten–bronze structure, numerous needlelike ferroelectric domains appear in a SBN single crystal when it is cooled through its transition temperature in the absence of a poling field. If the domains were illuminated by 1.06 μm radiation from a Nd:YAG laser, second-harmonic diffuse light was generated from these domains. This interesting effect, which can clearly be seen with the naked eye, will be used to generate all the primary colors using suitable lasers. © 1998 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization

Swelling in organic–inorganic multilayer systems

A. Convertino, A. Valentini, M. De Vittorio, and R. Cingolani

Appl. Phys. Lett. 73, 771 (1998); http://dx.doi.org/10.1063/1.121996 (3 pages) | Cited 4 times

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We have investigated the swelling of organic–inorganic structures based on fluorocarbon polymer (CF2) layers sandwiched by two layers of inorganic ionic (HfO2) and inorganic covalent (CdS) materials. The swelling of the CF2 layer produces cracks on the uppermost inorganic layer. The cracks form a network of hexagonal defects with random distribution. The extension of the pattern and the mean unit size have been measured for different solvents by using a purposely developed optical profilometer. We show that the swelling phenomenon strongly depends on the polar forces between the molecules of the solvent and those of the inorganic layers. The electric dipole moment of the solvents and the ionicity of the inorganic materials are thus the crucial parameters influencing the crack density and shape. © 1998 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Effect of the silicon top layer of silicon implanted with oxygen on the uptake and release of deuterium by the buried oxide

L. Zimmermann, J. M. M. de Nijs, P. F. A. Alkemade, K. Westerduin, and A. van Veen

Appl. Phys. Lett. 73, 774 (1998); http://dx.doi.org/10.1063/1.121997 (3 pages) | Cited 1 time

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The effect of the silicon top layer on the uptake and release of deuterium by silicon implanted with oxygen (SIMOX) was studied using thermal desorption measurements. The deuterium is incorporated in the buried oxide by disruption of the Si–O bridging bonds. The data reveal that the top layer reduces the uptake at 1073 K. Furthermore, it retards release; a moderate (≈1125 K) and a high-temperature (≈1400 K) retention were observed. It is proposed that release is accompanied by the reconstruction of the Si–O bonds and that the bare oxide surface constitutes an abundant source for defects thus enhancing the generation and elimination of Si–O bridging bond defects. © 1998 American Institute of Physics.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
61.72.uf Ge and Si
68.35.Ct Interface structure and roughness

Strain relaxation of boron nitride thin films on silicon

W. Donner, H. Dosch, S. Ulrich, H. Ehrhardt, and D. Abernathy

Appl. Phys. Lett. 73, 777 (1998); http://dx.doi.org/10.1063/1.121998 (3 pages) | Cited 14 times

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Exploiting the high brilliance of synchrotron radiation, we performed surface-sensitive and depth-resolved x-ray scattering experiments on thin films of boron nitride grown on Si(001) substrates. In-plane strains of different structural phases, namely turbostratic and cubic, grain sizes and textures were determined. Annealing the films up to temperatures of 1000 °C leads to large strain relaxation of about 70%, while the grain size stays constant at 80 Å. © 1998 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
61.72.Cc Kinetics of defect formation and annealing
61.05.cf X-ray scattering (including small-angle scattering)
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