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17 Aug 1998

Volume 73, Issue 7, pp. 865-1010

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Generation of intense excimer radiation from high-pressure hollow cathode discharges

Ahmed El-Habachi and Karl H. Schoenbach

Appl. Phys. Lett. 73, 885 (1998); http://dx.doi.org/10.1063/1.122027 (3 pages) | Cited 39 times

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By reducing the diameter of the cathode opening in a hollow cathode discharge geometry to values on the order of 100 μm, we were able to operate these discharges in noble gases in a direct current mode up to atmospheric pressure. High-pressure discharges in xenon were found to be strong sources of excimer radiation. Highest intensities at a wavelength of 172 nm were obtained at a pressure of 400 Torr. At this pressure, the vacuum ultraviolet (VUV) radiant power of a single discharge operating at a forward voltage of 220 V and currents exceeding 2 mA reaches values between 6% and 9% of the input electrical power. The possibility to form arrays of these discharges allows the generation of flat panel VUV lamps with radiant emittances exceeding 50 W/cm2. © 1998 American Institute of Physics.
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52.80.Hc Glow; corona
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
42.72.Bj Visible and ultraviolet sources
33.20.Ni Vacuum ultraviolet spectra

Experimental evidence for high-yield C74 production in an arc periphery plasma

R. Hatakeyama, T. Hirata, H. Ishida, and N. Sato

Appl. Phys. Lett. 73, 888 (1998); http://dx.doi.org/10.1063/1.122028 (3 pages) | Cited 4 times

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Spatial profiles and buffer-gas pressure dependences of fullerenes contained in primary carbon soots are measured in order to investigate production ratios of higher fullerenes to C60 in an arc-discharge fullerene generator. It is found that C74 is efficiently produced in the arc periphery-plasma region while C60 is mainly produced in the core-plasma region, being the most dominant higher fullerene under the condition of a higher helium-gas pressure (>100 Torr). © 1998 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.05.ub Fullerenes and related materials
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