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17 Aug 1998

Volume 73, Issue 7, pp. 865-1010

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Effect of crystallinity on the magnetoresistive properties of La0.8MnO3−δ thin films grown by chemical vapor deposition

S. Pignard, H. Vincent, J. P. Sénateur, K. Fröhlich, and J. Šouc

Appl. Phys. Lett. 73, 999 (1998); http://dx.doi.org/10.1063/1.122065 (3 pages) | Cited 34 times

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We report here a study on the role of crystallinity on the magnetoresistive properties of self-doped La0.8MnO3−δ thin films. Films have been grown by a liquid-source metalorganic chemical vapor deposition technique on two different single crystals: SrTiO3 (001) and Al2O3 (012). Epitaxial films are obtained on strontium titanate and show a high magnetoresistance peak at low fields: maximum magnetoresistive effect in the vicinity of the magnetic transition temperature, and negligible 50 K below. Polycrystalline films are observed on sapphire; they exhibit a lower magnetoresistance of several percent which remains nearly constant over a wide temperature range. Two magnetoresistive regimes can be distinguished in these films: in low fields (up to 5 mT), a strong magnetoresistance is obtained with a sensitivity of 0.28%/mT at 78 K; in higher fields, the magnetoresistance is linear and lower than this obtained in epitaxial films. The role of grain boundaries on the magnetoresistive effect is discussed. © 1998 American Institute of Physics.
Show PACS
75.47.De Giant magnetoresistance
61.72.Mm Grain and twin boundaries
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.-s Critical-point effects, specific heats, short-range order

Giant magnetoresistance in multilayers electrodeposited on n-Si

A. P. O’Keeffe, O. I. Kasyutich, W. Schwarzacher, L. S. de Oliveira, and A. A. Pasa

Appl. Phys. Lett. 73, 1002 (1998); http://dx.doi.org/10.1063/1.122066 (3 pages) | Cited 21 times

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Co–Ni–Cu/Cu multilayers have been electrodeposited directly onto n-type Si substrates. This removes the need to use a seed-layer deposited by some other method as part of the growth process and makes electrodeposition a significantly more convenient method for fabricating films that exhibit giant magnetoresistance (GMR). A maximum GMR of over 10% and a sensitivity of over 0.04%/Oe were recorded. The GMR and sensitivity of the multilayers both increase with increasing Cu layer thickness. © 1998 American Institute of Physics.
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75.47.De Giant magnetoresistance
81.15.Pq Electrodeposition, electroplating
81.05.Bx Metals, semimetals, and alloys
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.50.Cc Other ferromagnetic metals and alloys

Reentrant metal–insulator-type transition induced by high fluence chromium ion implantation of La0.7Ca0.3MnO3 thin films

L. F. Cohen, P. S. I. P. N. de Silva, N. Malde, A. K. M. Akther Hossain, K. A. Thomas, R. Chater, J. D. MacManus-Driscoll, T. Tate, N. D. Mathur, M. G. Blamire, and J. E. Evetts

Appl. Phys. Lett. 73, 1005 (1998); http://dx.doi.org/10.1063/1.122067 (3 pages) | Cited 3 times

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Thin films of colossal magnetoresistance (MR) material La0.7Ca0.3MnO3 were implanted with 200 keV Cr ions over a range of fluence from 1×1013 to 5×1015 ions/cm2. Resistance measurements were made in zero and applied magnetic fields of up to 8 T. At fluences of 1×1014 and 5×1014 Cr+/cm2, the resistance was much greater than in the unimplanted material and the metal–insulator transition temperature was suppressed to values below 20 K. For the highest fluence (5×1015 ions/cm2), a reentrant metal–insulator-type transition was observed and the resistance dropped significantly. Furthermore, improvement in the low-field MR was observed between the virgin and high fluence implanted films for fields less than 500 mT. These results are interpreted in terms of changes in magnetic properties with depth, defect creation, and the influence of oxygen deficiency. © 1998 American Institute of Physics.
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71.30.+h Metal-insulator transitions and other electronic transitions
75.50.Dd Nonmetallic ferromagnetic materials
72.15.Gd Galvanomagnetic and other magnetotransport effects
72.20.My Galvanomagnetic and other magnetotransport effects
75.47.De Giant magnetoresistance
72.60.+g Mixed conductivity and conductivity transitions
61.72.up Other materials
61.80.Jh Ion radiation effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.66.Bi Elemental solids
61.66.Dk Alloys
75.70.Ak Magnetic properties of monolayers and thin films

Temperature and bias dependence of magnetoresistance in doped manganite thin film trilayer junctions

J. Z. Sun, D. W. Abraham, K. Roche, and S. S. P. Parkin

Appl. Phys. Lett. 73, 1008 (1998); http://dx.doi.org/10.1063/1.122068 (3 pages) | Cited 46 times

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Thin film trilayer junction of La0.67Sr0.33MnO3-SrTiO3-La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in a magnetic field around 100 Oe at 14 K. The junction magnetoresistance is bias and temperature dependent. The energy scales associated with bias and temperature dependence are an order of magnitude apart. The same set of energies also determine the bias and temperature dependence of the differential conductance of the junction. We discuss these results in terms of metallic cluster inclusions at the junction-barrier interface. © 1998 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Dd Nonmetallic ferromagnetic materials
73.61.Ng Insulators
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
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