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24 Aug 1998

Volume 73, Issue 8, pp. 1017-1159

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Laser-based ultrasound detection using photorefractive quantum wells

I. Lahiri, L. J. Pyrak-Nolte, D. D. Nolte, M. R. Melloch, R. A. Kruger, G. D. Bacher, and M. B. Klein

Appl. Phys. Lett. 73, 1041 (1998); http://dx.doi.org/10.1063/1.122078 (3 pages) | Cited 24 times

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We demonstrate a laser-based adaptive ultrasonic homodyne receiver using dynamic holography in AlGaAs/GaAs photorefractive multiple quantum wells. The dynamic hologram acts as an adaptive beamsplitter that compensates wavefront distortions in the presence of speckle and requires no path-length stabilization. The photorefractive quantum wells have the unique ability to achieve maximum linear homodyne detection regardless of the value of the photorefractive phase shift by tuning the excitonic spectral phase. We achieve a root mean square noise-equivalent surface displacement of 6.7×10−7 Å(W/Hz)1/2. © 1998 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.20.-e Optical properties of bulk materials and thin films
71.35.-y Excitons and related phenomena
62.65.+k Acoustical properties of solids
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate

V. Magidson, D. V. Regelman, R. Beserman, and K. Dettmer

Appl. Phys. Lett. 73, 1044 (1998); http://dx.doi.org/10.1063/1.122079 (3 pages) | Cited 30 times

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Nominal Ge islands were grown by a molecular beam epitaxy technique on a Si(001) substrate. Island positions and shapes were measured by atomic force microscopy. Two types of islands with different sizes and shapes are present. The Si concentration distribution inside the islands was measured by Raman imaging technique with a 0.4 μm resolution, and was found to vary between 10% and 30% in large islands and be 10% in smaller islands. © 1998 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
61.72.S- Impurities in crystals
68.55.-a Thin film structure and morphology
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