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24 Aug 1998

Volume 73, Issue 8, pp. 1017-1159

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Magnetoresistance of mechanically induced grain boundaries in La0.7Ca0.3MnO3 films

Chatchai Srinitiwarawong and Michael Ziese

Appl. Phys. Lett. 73, 1140 (1998); http://dx.doi.org/10.1063/1.122109 (3 pages) | Cited 36 times

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The magnetoresistance of mechanically induced grain boundaries in La0.7Ca0.3MnO3 thin films is investigated. The grain boundaries are fabricated by a mechanical deformation of the LaAlO3 substrate prior to film deposition. During film deposition, the deformed substrate region induces some growth disorder in the film leading to a wide grain boundary. The resulting structures show a reproducible, substantial magnetoresistance in magnetic fields below 2 kG. We discuss the temperature and direction dependence of the magnetoresistance and argue that two contributions due to spin-polarized electron tunneling and the suppression of magnetic frustration by a magnetic field can be identified. © 1998 American Institute of Physics.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
61.72.Mm Grain and twin boundaries
62.20.F- Deformation and plasticity
73.61.-r Electrical properties of specific thin films

Spin-dependent tunneling through layered ferromagnetic nanoparticles

K. Inomata and Y. Saito

Appl. Phys. Lett. 73, 1143 (1998); http://dx.doi.org/10.1063/1.122110 (3 pages) | Cited 16 times

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Spin-dependent tunneling has been investigated for nanostructured ferromagnetic tunnel junctions, in which an insulating nanostructured film made of layered hard ferromagnetic Co80Pt20 nanoparticles dispersed in an insulating SiO2 matrix is sandwiched between two soft ferromagnetic electrodes, an Fe/Co80Pt20 as a bottom electrode and a Co9Fe as a top electrode. The junctions investigated have three tunnel barriers and exhibited tunnel magnetoresistance of 9% at room temperature with a small resistance at a low field. The charging energy of the particles with an average diameter of 7 nm was estimated to be 45 meV from the temperature dependence of the resistance. Coulomb blockade was not observed for the junctions because of the low junction resistance. © 1998 American Institute of Physics.
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73.40.Rw Metal-insulator-metal structures
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Cc Other ferromagnetic metals and alloys
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