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24 Aug 1998

Volume 73, Issue 8, pp. 1017-1159

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Quantitative nonlinear dielectric microscopy of periodically polarized ferroelectric domains

Chen Gao, Fred Duewer, Yalin Lu, and X.-D. Xiang

Appl. Phys. Lett. 73, 1146 (1998); http://dx.doi.org/10.1063/1.122111 (3 pages) | Cited 26 times

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A nonlinear dielectric scanning tip microwave near-field microscope capable of submicron quantitative imaging of nonlinear dielectric constant was developed. This nondestructive technique was used to image the nonlinear dielectric constant profiles of an yttrium-doped LiNbO3 single crystal with periodically polarized ferroelectric domains. © 1998 American Institute of Physics.
Show PACS
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
07.79.-v Scanning probe microscopes and components
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment

GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy

R. G. Beck, M. A. Eriksson, M. A. Topinka, R. M. Westervelt, K. D. Maranowski, and A. C. Gossard

Appl. Phys. Lett. 73, 1149 (1998); http://dx.doi.org/10.1063/1.122112 (3 pages) | Cited 43 times

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We have fabricated scanning probe microscope cantilevers with dimensions 65×11.4×0.25 μm3 and 3×2×0.129 μm3 from GaAs/Al0.3Ga0.7As heterostructures containing two-dimensional electron gases. Deflection is measured by an integrated field-effect transistor (FET) that senses strain via the piezoelectric effect and provides a low noise, low power displacement readout. We present images of a 200 nm mica grating taken with the large cantilever having a deflection (force) noise 10 Å/√Hz (19 pN/√Hz) at T = 2.2 K. The small cantilever has a resonant frequency of 11 MHz, a FET gate charge noise of 0.001 e/√Hz, and is projected to have a deflection (force) noise of 0.002 Å/√Hz (1 pN/√Hz) at T = 4.2 K. © 1998 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.-v Scanning probe microscopes and components

Surface near-edge x-ray adsorption fine structure of hydrogenated diamond films and Di(100) surfaces studied by H+ and H− ion desorption

A. Hoffman, G. Comtet, L. Hellner, G. Dujardin, and M. Petravic

Appl. Phys. Lett. 73, 1152 (1998); http://dx.doi.org/10.1063/1.122113 (3 pages) | Cited 28 times

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The near-edge x-ray absorption fine structures (NEXAFS) of hydrogenated diamond films and single-crystal diamond surfaces have been studied by recording the partial electron yield and the H+ and H− ion desorption yields as a function of photon energies around the C(1s) core level. It has been found that ion desorption is much more surface sensitive than electron emission, especially for the C(1s)–σ∗(C–H) surface resonance which is enhanced in the H+ ion yield. This enhanced surface sensitivity of ion desorption has enabled us to compare in detail the surface NEXAFS structure of both hydrogenated surfaces and to ascertain the quality of the diamond film. © 1998 American Institute of Physics.
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78.70.Dm X-ray absorption spectra
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.55.-a Thin film structure and morphology
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