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8 Mar 1999

Volume 74, Issue 10, pp. 1355-1498

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Photoreflectance study of H2S plasma-passivated GaAs surface

H. Shen, W. Zhou, J. Pamulapati, and F. Ren

Appl. Phys. Lett. 74, 1430 (1999); http://dx.doi.org/10.1063/1.123572 (3 pages) | Cited 13 times

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Photoreflectance is used to study the effect of H2S plasma passivation on the GaAs surface. GaAs samples are treated with a H2S plasma in an electron cyclotron resonance chemical vapor deposition system and in-situ encapsulated with a SiNx film. The surface Fermi level moves towards the conduction band after H2S plasma passivation and a surface state density of 6×1010 cm−2 is achieved under optimal passivation conditions. The surface state density is highly dependent on the sample temperature during passivation. The movement of the surface Fermi level is due to the reduction of the surface state density and not due to a shift of midgap surface states, suggesting that S–Ga bonds play the major role in H2S plasma passivated GaAs surfaces. This work demonstrates the need to measure both the surface Fermi level and the density of surface states. © 1999 American Institute of Physics.
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81.65.Rv Passivation
81.05.Ea III-V semiconductors
73.20.At Surface states, band structure, electron density of states
78.20.-e Optical properties of bulk materials and thin films
78.66.Fd III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Negative electron affinity at the Cs/AlN(0001) surface

C. I. Wu and A. Kahn

Appl. Phys. Lett. 74, 1433 (1999); http://dx.doi.org/10.1063/1.123573 (3 pages) | Cited 11 times

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The effects of cesium (Cs) adsorption on band bending and electron affinity at the AlN(0001)-1×1 surface are investigated via ultraviolet and x-ray photoemission spectroscopy. The movement of the Fermi level indicates an initial interaction between Cs and empty surface states, followed by an increase in band bending presumably linked to metallization. The electron affinity, χ, of the clean AlN surface is positive and equal to 1.9±0.3 eV. The Cs-surface dipole layer decreases χ by 2.6±0.3 eV, leading to evidence of true negative electron affinity at the surface of this important material. © 1999 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
79.60.Dp Adsorbed layers and thin films
73.20.At Surface states, band structure, electron density of states

Degenerate four-wave mixing experiments on GaN in the quasistationary regime

H. Haag, P. Gilliot, R. Lévy, B. Hönerlage, O. Briot, S. Ruffenach-Clur, and R. L. Aulombard

Appl. Phys. Lett. 74, 1436 (1999); http://dx.doi.org/10.1063/1.123574 (3 pages) | Cited 8 times

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In order to determine the third order of the nonlinear susceptibility χ(3) of GaN, we perform degenerate four-wave mixing measurements in a two-beam configuration at low temperature on a GaN epilayer on sapphire substrate. We measure the excitation spectrum of χ(3) close to the exciton resonances. Besides the χ(3) contribution, higher orders of the nonlinear susceptibility show already up around 10 kW cm−2, leading to a saturation of the signal. Results are complemented by a study of the influence of a band-to-band excitation (ℏωP = 4.02 eV) on the nonlinear susceptibility. © 1999 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.An Optical susceptibility, hyperpolarizability
78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

B. Grandidier, Huajie Chen, R. M. Feenstra, D. T. McInturff, P. W. Juodawlkis, and S. E. Ralph

Appl. Phys. Lett. 74, 1439 (1999); http://dx.doi.org/10.1063/1.123575 (3 pages) | Cited 22 times

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Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for Be–As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the optical response time on Be doping and annealing is attributed to changes in the As antisite concentration and the compensation effect of the Be. © 1999 American Institute of Physics.
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61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Cc Kinetics of defect formation and annealing

In–Ga intermixing in low-temperature grown GaAs delta doped with In

N. A. Bert, V. V. Chaldyshev, Yu. G. Musikhin, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner

Appl. Phys. Lett. 74, 1442 (1999); http://dx.doi.org/10.1063/1.123576 (3 pages) | Cited 10 times

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Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In–Ga intermixing is observed in the films subjected to 500–700 °C isochronal anneals. The In–Ga interdiffusion diffusivity is evaluated. The effective activation energy for In–Ga interdiffusion is found to be 1.1±0.3 eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV. © 1999 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing
68.60.Wm Other nonelectronic physical properties
61.72.J- Point defects and defect clusters

Exciton resonances in ultrathin InAs/InP quantum wells

P. Paki, R. Leonelli, L. Isnard, and R. A. Masut

Appl. Phys. Lett. 74, 1445 (1999); http://dx.doi.org/10.1063/1.123577 (3 pages) | Cited 15 times

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We have performed detailed optical measurements of ultrathin InAs/InP quantum wells grown by metal organic vapor phase epitaxy. Photoluminescence excitation spectra reveal the excitonic resonances associated with two- and three-monolayer thick InAs layers while polarization-dependent measurements clearly show the heavy- or light-hole nature of the resonances. These resonances, together with their emission bands, can be detected on the same sample, indicating the presence of well defined regions of different InAs layer thickness. We find that the energy position of the excitonic resonances cannot be reproduced by effective mass calculations based on the envelope function approximation. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

G. G. Jernigan, R. E. Stahlbush, M. K. Das, J. A. Cooper, and L. A. Lipkin

Appl. Phys. Lett. 74, 1448 (1999); http://dx.doi.org/10.1063/1.123597 (3 pages) | Cited 18 times

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Oxides grown on p-type 6H-SiC and on Si(100) were studied using x-ray photoelectron spectroscopy and sputter depth profiling to determine what differences exist between the two systems. The oxide on SiC is found to be stoichiometric SiO2, but the oxide is structurally different from the oxide grown on Si(100). We propose that strain introduced during processing accounts for the structural differences. We also found that Si atoms at the SiO2/SiC interface are chemically different from Si atoms in the bulk of SiC and a number of possible explanations for this are given. © 1999 American Institute of Physics.
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68.35.Ct Interface structure and roughness
81.65.Mq Oxidation
68.35.Dv Composition, segregation; defects and impurities
79.60.Jv Interfaces; heterostructures; nanostructures
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Observation of intermixing at the buried CdS/Cu(In, Ga)Se2 thin film solar cell heterojunction

C. Heske, D. Eich, R. Fink, E. Umbach, T. van Buuren, C. Bostedt, L. J. Terminello, S. Kakar, M. M. Grush, T. A. Callcott, F. J. Himpsel, D. L. Ederer, R. C. C. Perera, W. Riedl, and F. Karg

Appl. Phys. Lett. 74, 1451 (1999); http://dx.doi.org/10.1063/1.123578 (3 pages) | Cited 39 times

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A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In, Ga)Se2 interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general. © 1999 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Ct Interface structure and roughness
68.35.Fx Diffusion; interface formation
73.20.-r Electron states at surfaces and interfaces
78.70.En X-ray emission spectra and fluorescence
79.60.Jv Interfaces; heterostructures; nanostructures

On the sensitivity of the x-ray excited optical luminescence to the local structure of the luminescent Si sites of porous silicon

G. Dalba, P. Fornasini, R. Grisenti, N. Daldosso, and F. Rocca

Appl. Phys. Lett. 74, 1454 (1999); http://dx.doi.org/10.1063/1.123579 (3 pages) | Cited 10 times

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X-ray excited optical luminescence (XEOL) has been recorded in a wide x-ray energy range to obtain the extended x-ray absorption fine structure (EXAFS) at the Si K edge of porous silicon. A comparison between EXAFS measurements carried out simultaneously in photoluminescence yield (PLY) mode and in total electron yield (TEY) mode on red and orange porous silicon samples is presented. Experimental results suggest that TEY provides average structural information on all luminescent and nonluminescent Si sites. On the contrary, PLY is able to probe the local structure near the light emitting sites, and to monitor the modifications induced by current density changes during the sample preparation. PLY–EXAFS shows that the luminescent Si nanostructures are smaller and more disordered than the average structures of the porous layer probed by TEY, suggesting that the luminescent sites are located at the surface of the nanostructures. © 1999 American Institute of Physics.
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61.43.Gt Powders, porous materials
78.55.Mb Porous materials
81.05.Rm Porous materials; granular materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.55.Ap Elemental semiconductors

Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well

S. Evoy, C. K. Harnett, H. G. Craighead, S. Keller, U. K. Mishra, and S. P. DenBaars

Appl. Phys. Lett. 74, 1457 (1999); http://dx.doi.org/10.1063/1.123580 (3 pages) | Cited 11 times

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We report the scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well. Spectral analysis confirms the dominance of quantum well luminescence. This dominance is discussed in terms of the extent of band bending near the surface. The onset of light emission occurs at a bias larger than the emitted photon energy. This observation agrees with a tunneling in the GaN cap prior to a transport to the quantum well. Luminescence images exhibit features 30–100 nm in size and are discussed in relation to previous studies. © 1999 American Institute of Physics.  
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.60.Fi Electroluminescence

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura

Appl. Phys. Lett. 74, 1460 (1999); http://dx.doi.org/10.1063/1.123581 (3 pages) | Cited 76 times

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The emission mechanisms of bulk GaN and InGaN quantum wells (QWs) were studied by comparing their optical properties as a function of threading dislocation (TD) density, which was controlled by lateral epitaxial overgrowth. Slightly improved excitonic photoluminescence (PL) intensity was recognized by reducing TD density from 1010 cm−2 to less than 106 cm−2. However, the major PL decay time was independent of the TD density, but was rather sensitive to the interface quality or material purity. These results suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN QWs where carriers are effectively localized at certain quantum disk size potential minima to form quantized excitons before being trapped in nonradiative pathways, resulting in a slow decay time. The absence of any change in the optical properties due to reduction of TD density suggested that the effective band gap fluctuation in InGaN QWs is not related to TDs. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.Gg Exciton-mediated interactions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures

J. C. Fan, J. C. Wang, and Y. F. Chen

Appl. Phys. Lett. 74, 1463 (1999); http://dx.doi.org/10.1063/1.123582 (3 pages) | Cited 3 times

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It is shown that hydrogen passivation by the photochemical vapor deposition method can have a significant influence on GaInP/GaAs heterostructures. The effect has been investigated by low-temperature photoluminescence and current–voltage and capacitance–voltage experiments. The photoluminescence measurement shows a strong increase in the luminescence intensity after hydrogenation. It is interpreted in terms of the passivation of nonradiative recombination defect centers by atomic hydrogen. The effect is also accompanied by a simultaneous decrease in the carrier concentration as shown from the capacitance–voltage measurements. In addition, the effect of hydrogenation is confirmed by the improvement of the Schottky-diode properties. These results provide concrete evidence to support the passivation of impurities and defects by atomic hydrogen in GaInP/GaAs heterostructures. © 1999 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Rv Passivation
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Kk Junction diodes

Suppression of thermal interface degradation in (111) Si/SiO2 by noble gases

A. Stesmans, V. V. Afanas’ev, and A. G. Revesz

Appl. Phys. Lett. 74, 1466 (1999); http://dx.doi.org/10.1063/1.123595 (3 pages) | Cited 6 times

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Annealing-induced interface degradation of (111) Si/SiO2 has been studied in noble gas ambients. A remarkable impeding effect on degradation is found, inversely proportional to the gas atomic diameter. The noble gases physically obstruct SiO removal through their occupation of SiO accessible sites in the oxide, thus impeding degradation. The observed process represents blocking of a chemical reaction by physical action. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Mq Oxidation
68.35.Ct Interface structure and roughness
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Cation exchange: A scheme for synthesis of mercury-based high-temperature superconducting epitaxial thin films

J. Z. Wu, S. L. Yan, and Y. Y. Xie

Appl. Phys. Lett. 74, 1469 (1999); http://dx.doi.org/10.1063/1.123583 (3 pages) | Cited 31 times

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A cation-exchange process has been developed for growth of high-quality epitaxial thin films of highly volatile mercury-based high-temperature superconductors. By selecting epitaxial precursor matrices of TlyBa2CaCu2Ox (y = 1,2) and annealing them in Hg vapor, c-axis-oriented epitaxial HgBa2CaCu2O6+δ thin films with superior quality were formed through Tl and Hg-cation exchange. At 110 K, these films can carry supercurrent density close to 1 MA/cm2 which is nearly an order of magnitude higher than the best reported previously. This cation-exchange technique also provides a general scheme for synthesis of other volatile compounds with predesigned structure and composition. © 1999 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
82.39.Wj Ion exchange, dialysis, osmosis, electro-osmosis, membrane processes
74.25.Sv Critical currents
74.25.Ha Magnetic properties including vortex structures and related phenomena

Heterodyne detection of alternating magnetic fields with a resonating xylophone bar magnetometer

R. B. Givens, D. K. Wickenden, D. A. Oursler, R. Osiander, J. L. Champion, and T. J. Kistenmacher

Appl. Phys. Lett. 74, 1472 (1999); http://dx.doi.org/10.1063/1.123584 (3 pages) | Cited 6 times

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A resonating xylophone bar magnetometer has been utilized as the mixer in a heterodyne detector for variable-frequency alternating magnetic fields. To illustrate the range of this detection scheme, examples offered include the response to low frequency, sinusoidal magnetic fields at 2, 10, and 20 Hz and to high frequency sinusoidal magnetic fields in the MHz regime. In a final example, the response of the magnetometer to the field generated by a 20 Hz square wave has been compared to the Fourier components of an idealized square wave, with no apparent loss in sensitivity and a mean deviation from expected values of less than 0.5%. © 1999 American Institute of Physics.
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07.55.Ge Magnetometers for magnetic field measurements

Local characterization of electronic transport in microcrystalline silicon thin films with submicron resolution

B. Rezek, J. Stuchlík, A. Fejfar, and J. Kočka

Appl. Phys. Lett. 74, 1475 (1999); http://dx.doi.org/10.1063/1.123585 (3 pages) | Cited 31 times

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Two-dimensional maps of dark conductivity with submicron resolution have been obtained on in situ prepared hydrogenated microcrystalline silicon (μc-Si:H) layers used for solar cells by atomic force microscopy with conductive cantilever. Comparison of the morphology and current image allows clear identification of Si crystallites. Pronounced current decrease has been detected at the grain boundaries. The technique was used to study initial stages of μc-Si:H growth, and we show how the incubation layer, detrimental for solar cells efficiency, can be minimized by pulsed excimer laser crystallization of the initial amorphous layer. © 1999 American Institute of Physics.
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73.61.Cw Elemental semiconductors
72.40.+w Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion
68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys

Preparation and characterization of Dy nanoparticles

N. B. Shevchenko, J. A. Christodoulides, and G. C. Hadjipanayis

Appl. Phys. Lett. 74, 1478 (1999); http://dx.doi.org/10.1063/1.123586 (3 pages) | Cited 9 times

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A technique of pure nanoparticle preparation has been explored by forming first small metal particles under high pressure sputtering and then embedding them into a sputtered film matrix. The tandem deposition method is used where the sputtered matrix is deposited at an argon pressure of 5 mTorr and the particles are formed within a specially designed gun at a pressure of 1 Torr and then deposited. The particle-matrix compositional limitations of reactivity and miscibility are thus reduced. The new technique was applied to dysprosium metal particles in an aluminum matrix. The absence of the antiferromagnetic transition for particles with sizes of 4–12 nm was observed. The 4 nm particles behaved superparamagnetically, while the larger 12 nm particles showed coercivities over twice as large as that of the bulk material at cryogenic temperatures. The success of the technique is demonstrated by having been able to carry out the study on the dysprosium-aluminum system that normally reacts, preventing the existence of pure Dy particles. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Ni Dispersion-, fiber-, and platelet-reinforced metal-based composites
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Step-edge magnetoresistance in La0.7Ca0.3MnO3 films

M. Ziese, G. Heydon, R. Höhne, P. Esquinazi, and J. Dienelt

Appl. Phys. Lett. 74, 1481 (1999); http://dx.doi.org/10.1063/1.123587 (3 pages) | Cited 44 times

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The magnetoresistance of step-edge structures in La0.7Ca0.3MnO3 films was investigated. Step-edge arrays with 200 steps of height 140–200 nm and step separation 20 μm along [110] were fabricated on LaAlO3 substrates by chemically assisted ion-beam etching. Thin La0.7Ca0.3MnO3 films were deposited on the structured substrates by pulsed-laser deposition. Measurements of the large low-field magnetoresistance, the dynamic conductance, and the anisotropic magnetoresistance lead to the proposal of a model of spin-polarized tunneling in a ferromagnet/spin-glass/ferromagnet geometry. © 1999 American Institute of Physics.
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75.47.Gk Colossal magnetoresistance
75.47.De Giant magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.50.Lk Spin glasses and other random magnets
81.15.Fg Pulsed laser ablation deposition
75.45.+j Macroscopic quantum phenomena in magnetic systems
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Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties

K. B. Lee, S. Tirumala, and S. B. Desu

Appl. Phys. Lett. 74, 1484 (1999); http://dx.doi.org/10.1063/1.123588 (3 pages) | Cited 30 times

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We have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 °C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at PO2 = 1 mTorr was 20 μC/cm2 and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 1011 switching repetitions. The leakage current density at a field of 80 kV was 5×10−8 A/cm2. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
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Ridge waveguides in lithium niobate fabricated by differential etching following spatially selective domain inversion

Ian E. Barry, Graeme W. Ross, Peter G. R. Smith, and Robert W. Eason

Appl. Phys. Lett. 74, 1487 (1999); http://dx.doi.org/10.1063/1.123589 (2 pages) | Cited 18 times

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Ridge structures have been fabricated in z-cut LiNbO3 using the technique of differential etching following spatially selective domain inversion. Waveguides within these ridges have been achieved using the techniques of ion beam implantation, proton exchange, and titanium indiffusion. Using this last method, guides with losses <0.8 dB cm−1 have been realized for light at a wavelength of 1.3 μm. We briefly discuss applications for these structures. © 1999 American Institute of Physics.
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42.79.Gn Optical waveguides and couplers
42.86.+b Optical workshop techniques
42.82.Et Waveguides, couplers, and arrays
81.65.Cf Surface cleaning, etching, patterning
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis

Microfabricated tip arrays for improving force measurements

John-Bruce D. Green, Alexey Novoradovsky, Doewon Park, and Gil U. Lee

Appl. Phys. Lett. 74, 1489 (1999); http://dx.doi.org/10.1063/1.123590 (3 pages) | Cited 4 times

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Variability in the coverage or usable lifetime of active molecules at the apex of an atomic force microscope (AFM) tip is a key limitation to biomolecular force measurements with AFM. Microfabricated tip arrays make it possible to measure molecular forces between large arrays of biological molecules with AFM. The forces are measured between a probeless microfabricated cantilever and a microfabricated array containing approximately 105 addressable probes with variable radii. We measure intermolecular forces between the model ligand–receptor pair streptavidin–biotin, to demonstrate that these tip arrays can circumvent these coverage and lifetime obstacles. Further development of these arrays promises to provide a means for measuring millions of different intermolecular interactions, paving the way for AFM to be realistically applied to screen combinatorial libraries. © 1999 American Institute of Physics.
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87.64.Dz Scanning tunneling and atomic force microscopy
87.15.La Mechanical properties
87.85.Va Micromachining
87.14.E- Proteins
07.79.Lh Atomic force microscopes
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A refractive collimator for synchrotron radiation

A. Q. R. Baron, Y. Kohmura, Y. Ohishi, and T. Ishikawa

Appl. Phys. Lett. 74, 1492 (1999); http://dx.doi.org/10.1063/1.123591 (3 pages) | Cited 6 times

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We demonstrate that a simple and inexpensive plastic refractive lens may be used to collimate synchrotron radiation. The divergence of an 18.5 keV beam of radiation from an undulator at SPring-8 is reduced from 11 μrad, full width at half maximum, to less than 3.5 μrad, while preserving 75% of the incident intensity. © 1999 American Institute of Physics.
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07.85.Qe Synchrotron radiation instrumentation
41.60.Ap Synchrotron radiation

Laser-induced capillary wave at air/liquid interfaces in time domain

Kaori Yasumoto, Noboru Hirota, and Masahide Terazima

Appl. Phys. Lett. 74, 1495 (1999); http://dx.doi.org/10.1063/1.123592 (3 pages) | Cited 6 times

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The capillary wave at air/liquid interfaces is detected by the forced Brillouin and Rayleigh light scattering in the time domain. The forced Brillouin scattering signal from the air/water surface shows clear oscillation. The wave is not pure sine or cosine wave but it shows dual features. A strongly overdamped signal is observed from the air/hexanol surface in 1.4–2.0×106 m−1, while the signal shows a trace of oscillation in a lower wave number region. The oscillation also indicates the existence of two waves. The mechanism to create the capillary wave by the photothermal effect is discussed. © 1999 American Institute of Physics.
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47.35.-i Hydrodynamic waves
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
78.35.+c Brillouin and Rayleigh scattering; other light scattering
68.03.Cd Surface tension and related phenomena
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Erratum: “Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire” [Appl. Phys. Lett. 73, 3090 (1998)]

Y. Golan, X. H. Wu, J. S. Speck, R. P. Vaudo, and V. M. Phanse

Appl. Phys. Lett. 74, 1498 (1999); http://dx.doi.org/10.1063/1.123593 (1 page) | Cited 1 time

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Abstract Unavailable
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
99.10.Cd Errata
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Erratum: “Controlled ink-jet printing and deposition of organic polymers and solid particles” [Appl. Phys. Lett. 73, 2375 (1998)]

Gokhan Percin, Thomas S. Lundgren, and Butrus T. Khuri-Yakub

Appl. Phys. Lett. 74, 1498 (1999); http://dx.doi.org/10.1063/1.123594 (1 page)

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Abstract Unavailable
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
85.40.Sz Deposition technology
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.40.Hp Lithography, masks and pattern transfer
07.07.Mp Transducers
99.10.Cd Errata
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