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8 Mar 1999

Volume 74, Issue 10, pp. 1355-1498

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Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties

K. B. Lee, S. Tirumala, and S. B. Desu

Appl. Phys. Lett. 74, 1484 (1999); http://dx.doi.org/10.1063/1.123588 (3 pages) | Cited 31 times

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We have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 °C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at PO2 = 1 mTorr was 20 μC/cm2 and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 1011 switching repetitions. The leakage current density at a field of 80 kV was 5×10−8 A/cm2. © 1999 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.22.Ej Polarization and depolarization
77.80.Fm Switching phenomena
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.-a Thin film structure and morphology
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