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8 Mar 1999

Volume 74, Issue 10, pp. 1355-1498

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Erratum: “Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire” [Appl. Phys. Lett. 73, 3090 (1998)]

Y. Golan, X. H. Wu, J. S. Speck, R. P. Vaudo, and V. M. Phanse

Appl. Phys. Lett. 74, 1498 (1999); http://dx.doi.org/10.1063/1.123593 (1 page) | Cited 1 time

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Abstract Unavailable
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
99.10.Cd Errata
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Erratum: “Controlled ink-jet printing and deposition of organic polymers and solid particles” [Appl. Phys. Lett. 73, 2375 (1998)]

Gokhan Percin, Thomas S. Lundgren, and Butrus T. Khuri-Yakub

Appl. Phys. Lett. 74, 1498 (1999); http://dx.doi.org/10.1063/1.123594 (1 page)

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Abstract Unavailable
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
85.40.Sz Deposition technology
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.40.Hp Lithography, masks and pattern transfer
07.07.Mp Transducers
99.10.Cd Errata
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