APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

8 Mar 1999

Volume 74, Issue 10, pp. 1355-1498

Return to All Sections
back to top
RSS Feeds

Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates

K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya, and J. C. Jiang

Appl. Phys. Lett. 74, 1355 (1999); http://dx.doi.org/10.1063/1.123548 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report growth of self-organized In0.4Ga0.6As quantum dots on Si substrates by molecular-beam epitaxy. Low-temperature (17 K) photoluminescence spectra show that the optical properties of In0.4Ga0.6As quantum dots grown on Si are comparable to quantum dots grown on GaAs substrates. We also present preliminary characteristics of In0.4Ga0.6As quantum-dot lasers grown on Si substrates. Light versus current measurements at 80 K under pulsed bias conditions show that Ith=3.85 kA/cm2. The lasing spectral output has a peak emission wavelength of 1.013 μm and a linewidth (full width at half maximum) of ∼4 Å at the threshold. © 1999 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Threshold reduction of stimulated Brillouin scattering by the enhanced Stokes noise initiation

Hyun Su Kim, Sung-Ho Kim, Do-Kyeong Ko, Gwon Lim, Byung Heon Cha, and Jongmin Lee

Appl. Phys. Lett. 74, 1358 (1999); http://dx.doi.org/10.1063/1.123549 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A method of threshold reduction for stimulated Brillouin scattering (SBS) has been demonstrated in a SBS medium combined with a laser dye. It is based on the enhanced Stokes noise initiated by additional field with a Brillouin-shifted frequency component emitted from the laser dye in the SBS medium. Rhodamine 6G dye dissolved in SBS medium (ethanol), which was pumped by a 570 nm wavelength laser, was used to prove the SBS threshold reduction by the additional Stokes fields. The SBS threshold of this solution was reduced to a level about four times lower than that of the pure SBS medium. Also, the experimental results were investigated using the modified formula for the SBS threshold. © 1999 American Institute of Physics.
Show PACS
42.65.Es Stimulated Brillouin and Rayleigh scattering
78.35.+c Brillouin and Rayleigh scattering; other light scattering
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Triplet luminescent dinuclear-gold(I) complex-based light-emitting diodes with low turn-on voltage

Yuguang Ma, Xuemei Zhou, Jiacong Shen, Hsiu-Yi Chao, and Chi-Ming Che

Appl. Phys. Lett. 74, 1361 (1999); http://dx.doi.org/10.1063/1.123550 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electroluminescence (EL) from a dinuclear-gold(I)-chlorate compound containing bridging phosphine ligands [Au2(dppm)Cl2] as emitting layer is reported. Devices with a structure Al/Au2(dppm)Cl2/indium–tin–oxide demonstrated a uniform emission under the driving voltage below 1 V. The EL emission was from triplet excited state and the emission color of the device was found to depend on the deposition rate of Au2(dppm)Cl2, which can be explained as the different aggregation forms of the stacking compound in the deposition process. © 1999 American Institute of Physics.  
Show PACS
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Lateral current spreading in ridge waveguide laser diodes

Martin Achtenhagen and Amos Hardy

Appl. Phys. Lett. 74, 1364 (1999); http://dx.doi.org/10.1063/1.123551 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lateral current spreading is experimentally and theoretically investigated in ridge waveguide laser diodes having various residual guide thickness outside the ridge region. It is found that a critical residual thickness exists below which the lasers emit in a single mode with a low threshold current. Above this critical value, the threshold rises rapidly and the lasers oscillate simultaneously in the two lowest order lateral modes. This critical thickness can be used to experimentally determine an average doping level of the upper waveguide layer. This doping level permits the control of the threshold current and series resistance. © 1999 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.79.Gn Optical waveguides and couplers

Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics

C. Ellmers, M. R. Hofmann, D. Karaiskaj, S. Leu, W. Stolz, W. W. Rühle, and M. Hilpert

Appl. Phys. Lett. 74, 1367 (1999); http://dx.doi.org/10.1063/1.123552 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a vertical-cavity surface-emitting laser structure optimized for fast intrinsic emission dynamics, using the strain-compensated (GaIn)As/Ga(PAs) material system with a 2λ sin-type cavity. The high quality of the epitaxial growth is revealed by the large normal mode splitting of 10.5 meV found in reflectivity measurements. The fast dynamical response of our structure after femtosecond optical excitation at 30 K yields a pulse width of 3.2 ps and a peak delay of only 4.8 ps. A structure designed for laser emission at higher temperatures exhibits picosecond dynamics at room temperature. © 1999 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Photonic crystals for micro lightwave circuits using wavelength-dependent angular beam steering

Hideo Kosaka, Takayuki Kawashima, Akihisa Tomita, Masaya Notomi, Toshiaki Tamamura, Takashi Sato, and Shojiro Kawakami

Appl. Phys. Lett. 74, 1370 (1999); http://dx.doi.org/10.1063/1.123553 (3 pages) | Cited 121 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Light-beam steering that is extremely wavelength dependent has been demonstrated by using photonic crystals fabricated on Si. The scanning span reached 50° with only a 1% shift of incident wavelength at around 1 μm. The resulting angular dispersion is two orders of magnitude larger than that achieved with conventional prisms or gratings. The application of such superprism phenomena promises to enable the fabrication of integrated micro lightwave circuits that will allow more efficient use of wavelength resources when used in wavelength multiplexers/demultiplexers or dispersion compensators by enabling lower loss and broader bandwidth. © 1999 American Institute of Physics.
Show PACS
42.70.Qs Photonic bandgap materials
42.50.-p Quantum optics
42.82.-m Integrated optics
42.79.-e Optical elements, devices, and systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Discontinuous phase elements for transverse mode selection in laser resonators

Ram Oron, Yochay Danziger, Nir Davidson, Asher A. Friesem, and Erez Hasman

Appl. Phys. Lett. 74, 1373 (1999); http://dx.doi.org/10.1063/1.123554 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Discontinuous phase elements can be inserted into laser resonators so that the lasers will operate with only one desired high order transverse mode. These elements introduce sharp discontinuous phase changes so as to result in minimal losses for a desired transverse mode but high losses to others. The basic principles, along with experimental results with Nd:yttrium–aluminum–garnet and CO2 lasers, illustrating improved output powers with a high beam quality of low divergence, are presented. © 1999 American Institute of Physics.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Lt Gas lasers including excimer and metal-vapor lasers

The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode

T. Wang, T. Sugahara, S. Sakai, and J. Orton

Appl. Phys. Lett. 74, 1376 (1999); http://dx.doi.org/10.1063/1.123555 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The temperature dependence of photoluminescence measurement was performed on an undoped In0.126Ga0.874N/GaN multiple quantum well (MQW) structure and a light emitting diode (LED) structure using this MQW as an active region. The emission energy of the LED structure showed a red shift of about 230 meV at room temperature compared with the undoped In0.126Ga0.874N/GaN MQW. This behavior of the LED structure is attributed to the quantum-confined Stark effect due to its p-n junction induced electric field. This conclusion was confirmed by a calculation and a detailed discussion based on the theory of the quantum-confined Stark effect. © 1999 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.20.Jq Electro-optical effects
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close