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8 Mar 1999

Volume 74, Issue 10, pp. 1355-1498

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Intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures

K. Ohtani and H. Ohno

Appl. Phys. Lett. 74, 1409 (1999); http://dx.doi.org/10.1063/1.123566 (3 pages) | Cited 10 times

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Intersubband electroluminescence in InAs quantum wells embedded in InAs/GaSb/AlSb type-II cascade structures is reported. The observed emission energy is in good agreement with calculation based on the multiband k⋅p theory. Dominant polarization of the emitted light is perpendicular to the quantum well layers. Difference in the spectrum shape between intersubband and interband cascade transitions is also presented. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors

One-dimensional to one-dimensional electron resonant tunneling in a double asymmetric quantum-wire structure

Yongqiang Wang, Qi Huang, and Junming Zhou

Appl. Phys. Lett. 74, 1412 (1999); http://dx.doi.org/10.1063/1.123567 (3 pages) | Cited 4 times

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An atomically precise double asymmetric quantum-wire structure was fabricated with the cleaved edge overgrowth method. A resonant tunneling diode for such a structure was successfully achieved. Its voltage–current characteristic was measured at 77 K. A sharp resonant tunneling current peak was observed and its peak-to-valley ratio is about 18:1, which is much larger than that of a double-barrier quantum-well structure, and it is ascribed to one-dimensional to one-dimensional electron resonant tunneling through the double asymmetric quantum-wire structure. © 1999 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.-r Electrical properties of specific thin films
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Antimonides with the half-Heusler structure: New thermoelectric materials

K. Mastronardi, D. Young, C.-C. Wang, P. Khalifah, R. J. Cava, and A. P. Ramirez

Appl. Phys. Lett. 74, 1415 (1999); http://dx.doi.org/10.1063/1.123596 (3 pages) | Cited 52 times

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The thermoelectric properties near ambient temperature of half-Heusler alloys based on LnPdSb, where Ln=Ho, Er, and Dy are reported. The Seebeck coefficients are large, between 60 and 250 μV/K, and the materials are p type. The resistivities are between 0.6 and 20 mΩ cm. Thermal conductivities are between approximately 5.0 and 3.5 W/mK at 300 K, and are smallest in intentionally disordered materials. The highest ambient temperature ZT obtained is 0.06. Band-structure calculations are presented for LuPdSb. It is suggested that half-Heusler alloys with 18 electrons per formula unit may represent a large class of thermoelectric materials. © 1999 American Institute of Physics.
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72.20.Pa Thermoelectric and thermomagnetic effects
72.80.Jc Other crystalline inorganic semiconductors
66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves

Pump and probe measurement of intersubband relaxation time in short-wavelength intersubband transition

Takashi Asano, Susumu Noda, and Katsuhiro Tomoda

Appl. Phys. Lett. 74, 1418 (1999); http://dx.doi.org/10.1063/1.123568 (3 pages) | Cited 9 times

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Population relaxation dynamics of the short-wavelength (∼2.5 μm) intersubband transition (ISB-T) in narrow InGaAs/AlAs quantum wells is investigated. Femtosecond (∼100 fs) pump and probe measurement yields a relaxation time of ∼2.7 ps, which is as fast as those observed for 10–5 μm ISB-T (0.7–1.5 ps, respectively). The ISB relaxation time increases more rapidly than that predicted from the usual intersubband optical-phonon scattering model as the ISB-T energy increases. Our theoretical calculation, which takes into account the intrasubband energy relaxation process, agrees well with the experimental results. The intrasubband energy relaxation process is found to be important in the short-wavelength region. © 1999 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
63.20.K- Phonon interactions
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy

M. W. Nelson, P. G. Schroeder, R. Schlaf, B. A. Parkinson, C. W. Almgren, and A. N. Erickson

Appl. Phys. Lett. 74, 1421 (1999); http://dx.doi.org/10.1063/1.123569 (3 pages) | Cited 5 times

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Tapping-mode atomic force microscopy was used to spatially resolve areas of different doping types on Si wafers patterned by photolithography and subsequent ion implantation. Application of a direct current dc bias between cantilever and sample during measurement induced a change in the tapping-mode phase contrast depending on the dopant type of the scanned sample area. This allowed the direct identification of areas of different doping types. Additional measurements on Au samples demonstrate a direct correlation between bias-induced Coulomb force and resulting phase change allowing the conclusion that the observed phase contrast results from dc bias-induced band bending changes. © 1999 American Institute of Physics.
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61.72.uf Ge and Si
61.72.S- Impurities in crystals
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
85.40.Ry Impurity doping, diffusion and ion implantation technology
85.40.Hp Lithography, masks and pattern transfer
81.05.Cy Elemental semiconductors

Interface and bulk defects in SiC/GaN heterostructures characterized using thermal admittance spectroscopy

H. Witte, A. Krtschil, M. Lisker, J. Christen, M. Topf, D. Meister, and B. K. Meyer

Appl. Phys. Lett. 74, 1424 (1999); http://dx.doi.org/10.1063/1.123570 (3 pages) | Cited 3 times

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SiC/GaN p-n and n-n heterostructures grown by low pressure chemical vapor deposition were investigated using thermal admittance spectroscopy. Different kinds of defects were isolated and located. Evidence of a distribution of defects at the p-SiC/n-GaN interface is given as having thermal activation energies of (87±3) meV at 5 V and (72±4) meV at 8 V bias. Additionally, three bulk defects with activation energies between 155 and 175 meV were found. By comparison with admittance spectra of the p-type SiC substrate, one level was identified as Al acceptor in SiC, whereas the other defects are electron traps in the GaN layer. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.61.Le Other inorganic semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Nonlinear 1/f noise characteristics in luminescent porous silicon

I. Bloom and I. Balberg

Appl. Phys. Lett. 74, 1427 (1999); http://dx.doi.org/10.1063/1.123571 (3 pages) | Cited 12 times

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We present noise characteristics of luminescent porous silicon and show that they shed light on the transport mechanism in this system. The 1/f fluctuations show non-Gaussian and nonlinear behavior, and they give a high Hooge factor, typical of disordered conductors. By carrying out the measurements under various bias conditions, we found a bias-dependent redistribution of the percolating current paths. The close resemblance between the present results and those found in granular metals suggests that a tunneling process controlled by the electrostatic energy determines the conduction paths between the nanocrystallites in luminescent porous silicon. © 1999 American Institute of Physics.
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72.80.Cw Elemental semiconductors
72.70.+m Noise processes and phenomena
72.20.Ht High-field and nonlinear effects

Photoreflectance study of H2S plasma-passivated GaAs surface

H. Shen, W. Zhou, J. Pamulapati, and F. Ren

Appl. Phys. Lett. 74, 1430 (1999); http://dx.doi.org/10.1063/1.123572 (3 pages) | Cited 13 times

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Photoreflectance is used to study the effect of H2S plasma passivation on the GaAs surface. GaAs samples are treated with a H2S plasma in an electron cyclotron resonance chemical vapor deposition system and in-situ encapsulated with a SiNx film. The surface Fermi level moves towards the conduction band after H2S plasma passivation and a surface state density of 6×1010 cm−2 is achieved under optimal passivation conditions. The surface state density is highly dependent on the sample temperature during passivation. The movement of the surface Fermi level is due to the reduction of the surface state density and not due to a shift of midgap surface states, suggesting that S–Ga bonds play the major role in H2S plasma passivated GaAs surfaces. This work demonstrates the need to measure both the surface Fermi level and the density of surface states. © 1999 American Institute of Physics.
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81.65.Rv Passivation
81.05.Ea III-V semiconductors
73.20.At Surface states, band structure, electron density of states
78.20.-e Optical properties of bulk materials and thin films
78.66.Fd III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Negative electron affinity at the Cs/AlN(0001) surface

C. I. Wu and A. Kahn

Appl. Phys. Lett. 74, 1433 (1999); http://dx.doi.org/10.1063/1.123573 (3 pages) | Cited 11 times

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The effects of cesium (Cs) adsorption on band bending and electron affinity at the AlN(0001)-1×1 surface are investigated via ultraviolet and x-ray photoemission spectroscopy. The movement of the Fermi level indicates an initial interaction between Cs and empty surface states, followed by an increase in band bending presumably linked to metallization. The electron affinity, χ, of the clean AlN surface is positive and equal to 1.9±0.3 eV. The Cs-surface dipole layer decreases χ by 2.6±0.3 eV, leading to evidence of true negative electron affinity at the surface of this important material. © 1999 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
79.60.Dp Adsorbed layers and thin films
73.20.At Surface states, band structure, electron density of states

Degenerate four-wave mixing experiments on GaN in the quasistationary regime

H. Haag, P. Gilliot, R. Lévy, B. Hönerlage, O. Briot, S. Ruffenach-Clur, and R. L. Aulombard

Appl. Phys. Lett. 74, 1436 (1999); http://dx.doi.org/10.1063/1.123574 (3 pages) | Cited 8 times

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In order to determine the third order of the nonlinear susceptibility χ(3) of GaN, we perform degenerate four-wave mixing measurements in a two-beam configuration at low temperature on a GaN epilayer on sapphire substrate. We measure the excitation spectrum of χ(3) close to the exciton resonances. Besides the χ(3) contribution, higher orders of the nonlinear susceptibility show already up around 10 kW cm−2, leading to a saturation of the signal. Results are complemented by a study of the influence of a band-to-band excitation (ℏωP = 4.02 eV) on the nonlinear susceptibility. © 1999 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.An Optical susceptibility, hyperpolarizability
78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

B. Grandidier, Huajie Chen, R. M. Feenstra, D. T. McInturff, P. W. Juodawlkis, and S. E. Ralph

Appl. Phys. Lett. 74, 1439 (1999); http://dx.doi.org/10.1063/1.123575 (3 pages) | Cited 22 times

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Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for Be–As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the optical response time on Be doping and annealing is attributed to changes in the As antisite concentration and the compensation effect of the Be. © 1999 American Institute of Physics.
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61.72.J- Point defects and defect clusters
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Cc Kinetics of defect formation and annealing

In–Ga intermixing in low-temperature grown GaAs delta doped with In

N. A. Bert, V. V. Chaldyshev, Yu. G. Musikhin, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner

Appl. Phys. Lett. 74, 1442 (1999); http://dx.doi.org/10.1063/1.123576 (3 pages) | Cited 10 times

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Low-temperature grown GaAs films with indium delta layers are studied by transmission electron microscopy. The delta layers in the as-grown film are found to be as thick as four monolayers (ML) independently of a nominal In deposit of 0.5 or 1 ML, a thickness which reflects the film surface roughness during the low-temperature growth. A pronounced In–Ga intermixing is observed in the films subjected to 500–700 °C isochronal anneals. The In–Ga interdiffusion diffusivity is evaluated. The effective activation energy for In–Ga interdiffusion is found to be 1.1±0.3 eV which is significantly smaller than a value of 1.93 eV for a stoichiometric GaAs. The difference seems to result from a loss of the gallium vacancy supersaturation upon annealing, and is consistent with an annihilation enthalpy of 0.8 eV. © 1999 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Cc Kinetics of defect formation and annealing
68.60.Wm Other nonelectronic physical properties
61.72.J- Point defects and defect clusters

Exciton resonances in ultrathin InAs/InP quantum wells

P. Paki, R. Leonelli, L. Isnard, and R. A. Masut

Appl. Phys. Lett. 74, 1445 (1999); http://dx.doi.org/10.1063/1.123577 (3 pages) | Cited 15 times

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We have performed detailed optical measurements of ultrathin InAs/InP quantum wells grown by metal organic vapor phase epitaxy. Photoluminescence excitation spectra reveal the excitonic resonances associated with two- and three-monolayer thick InAs layers while polarization-dependent measurements clearly show the heavy- or light-hole nature of the resonances. These resonances, together with their emission bands, can be detected on the same sample, indicating the presence of well defined regions of different InAs layer thickness. We find that the energy position of the excitonic resonances cannot be reproduced by effective mass calculations based on the envelope function approximation. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Interfacial differences between SiO2 grown on 6H-SiC and on Si(100)

G. G. Jernigan, R. E. Stahlbush, M. K. Das, J. A. Cooper, and L. A. Lipkin

Appl. Phys. Lett. 74, 1448 (1999); http://dx.doi.org/10.1063/1.123597 (3 pages) | Cited 18 times

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Oxides grown on p-type 6H-SiC and on Si(100) were studied using x-ray photoelectron spectroscopy and sputter depth profiling to determine what differences exist between the two systems. The oxide on SiC is found to be stoichiometric SiO2, but the oxide is structurally different from the oxide grown on Si(100). We propose that strain introduced during processing accounts for the structural differences. We also found that Si atoms at the SiO2/SiC interface are chemically different from Si atoms in the bulk of SiC and a number of possible explanations for this are given. © 1999 American Institute of Physics.
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68.35.Ct Interface structure and roughness
81.65.Mq Oxidation
68.35.Dv Composition, segregation; defects and impurities
79.60.Jv Interfaces; heterostructures; nanostructures
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Observation of intermixing at the buried CdS/Cu(In, Ga)Se2 thin film solar cell heterojunction

C. Heske, D. Eich, R. Fink, E. Umbach, T. van Buuren, C. Bostedt, L. J. Terminello, S. Kakar, M. M. Grush, T. A. Callcott, F. J. Himpsel, D. L. Ederer, R. C. C. Perera, W. Riedl, and F. Karg

Appl. Phys. Lett. 74, 1451 (1999); http://dx.doi.org/10.1063/1.123578 (3 pages) | Cited 39 times

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A combination of x-ray emission spectroscopy and x-ray photoelectron spectroscopy using high brightness synchrotron radiation has been employed to investigate the electronic and chemical structure of the buried CdS/Cu(In, Ga)Se2 interface, which is the active interface in highly efficient thin film solar cells. In contrast to the conventional model of an abrupt interface, intermixing processes involving the elements S, Se, and In have been identified. The results shed light on the electronic structure and interface formation processes of semiconductor heterojunctions and demonstrate a powerful tool for investigating buried interfaces in general. © 1999 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.35.Ct Interface structure and roughness
68.35.Fx Diffusion; interface formation
73.20.-r Electron states at surfaces and interfaces
78.70.En X-ray emission spectra and fluorescence
79.60.Jv Interfaces; heterostructures; nanostructures

On the sensitivity of the x-ray excited optical luminescence to the local structure of the luminescent Si sites of porous silicon

G. Dalba, P. Fornasini, R. Grisenti, N. Daldosso, and F. Rocca

Appl. Phys. Lett. 74, 1454 (1999); http://dx.doi.org/10.1063/1.123579 (3 pages) | Cited 10 times

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X-ray excited optical luminescence (XEOL) has been recorded in a wide x-ray energy range to obtain the extended x-ray absorption fine structure (EXAFS) at the Si K edge of porous silicon. A comparison between EXAFS measurements carried out simultaneously in photoluminescence yield (PLY) mode and in total electron yield (TEY) mode on red and orange porous silicon samples is presented. Experimental results suggest that TEY provides average structural information on all luminescent and nonluminescent Si sites. On the contrary, PLY is able to probe the local structure near the light emitting sites, and to monitor the modifications induced by current density changes during the sample preparation. PLY–EXAFS shows that the luminescent Si nanostructures are smaller and more disordered than the average structures of the porous layer probed by TEY, suggesting that the luminescent sites are located at the surface of the nanostructures. © 1999 American Institute of Physics.
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61.43.Gt Powders, porous materials
78.55.Mb Porous materials
81.05.Rm Porous materials; granular materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.55.Ap Elemental semiconductors

Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well

S. Evoy, C. K. Harnett, H. G. Craighead, S. Keller, U. K. Mishra, and S. P. DenBaars

Appl. Phys. Lett. 74, 1457 (1999); http://dx.doi.org/10.1063/1.123580 (3 pages) | Cited 11 times

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We report the scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well. Spectral analysis confirms the dominance of quantum well luminescence. This dominance is discussed in terms of the extent of band bending near the surface. The onset of light emission occurs at a bias larger than the emitted photon energy. This observation agrees with a tunneling in the GaN cap prior to a transport to the quantum well. Luminescence images exhibit features 30–100 nm in size and are discussed in relation to previous studies. © 1999 American Institute of Physics.  
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.60.Fi Electroluminescence

Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, and S. Nakamura

Appl. Phys. Lett. 74, 1460 (1999); http://dx.doi.org/10.1063/1.123581 (3 pages) | Cited 76 times

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The emission mechanisms of bulk GaN and InGaN quantum wells (QWs) were studied by comparing their optical properties as a function of threading dislocation (TD) density, which was controlled by lateral epitaxial overgrowth. Slightly improved excitonic photoluminescence (PL) intensity was recognized by reducing TD density from 1010 cm−2 to less than 106 cm−2. However, the major PL decay time was independent of the TD density, but was rather sensitive to the interface quality or material purity. These results suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN QWs where carriers are effectively localized at certain quantum disk size potential minima to form quantized excitons before being trapped in nonradiative pathways, resulting in a slow decay time. The absence of any change in the optical properties due to reduction of TD density suggested that the effective band gap fluctuation in InGaN QWs is not related to TDs. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.Gg Exciton-mediated interactions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures

J. C. Fan, J. C. Wang, and Y. F. Chen

Appl. Phys. Lett. 74, 1463 (1999); http://dx.doi.org/10.1063/1.123582 (3 pages) | Cited 3 times

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It is shown that hydrogen passivation by the photochemical vapor deposition method can have a significant influence on GaInP/GaAs heterostructures. The effect has been investigated by low-temperature photoluminescence and current–voltage and capacitance–voltage experiments. The photoluminescence measurement shows a strong increase in the luminescence intensity after hydrogenation. It is interpreted in terms of the passivation of nonradiative recombination defect centers by atomic hydrogen. The effect is also accompanied by a simultaneous decrease in the carrier concentration as shown from the capacitance–voltage measurements. In addition, the effect of hydrogenation is confirmed by the improvement of the Schottky-diode properties. These results provide concrete evidence to support the passivation of impurities and defects by atomic hydrogen in GaInP/GaAs heterostructures. © 1999 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.Rv Passivation
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Kk Junction diodes

Suppression of thermal interface degradation in (111) Si/SiO2 by noble gases

A. Stesmans, V. V. Afanas’ev, and A. G. Revesz

Appl. Phys. Lett. 74, 1466 (1999); http://dx.doi.org/10.1063/1.123595 (3 pages) | Cited 6 times

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Annealing-induced interface degradation of (111) Si/SiO2 has been studied in noble gas ambients. A remarkable impeding effect on degradation is found, inversely proportional to the gas atomic diameter. The noble gases physically obstruct SiO removal through their occupation of SiO accessible sites in the oxide, thus impeding degradation. The observed process represents blocking of a chemical reaction by physical action. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.Mq Oxidation
68.35.Ct Interface structure and roughness
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