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8 Mar 1999

Volume 74, Issue 10, pp. 1355-1498

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In situ annealing studies of molecular-beam epitaxial growth of SrS:Cu

W. Tong, Y. B. Xin, W. Park, and C. J. Summers

Appl. Phys. Lett. 74, 1379 (1999); http://dx.doi.org/10.1063/1.123556 (3 pages) | Cited 15 times

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Annealing studies are reported on molecular-beam epitaxial grown SrS:Cu which has potential as a blue phosphor for full color electroluminescent (EL) displays. It was found that annealing under a sulfur flux at 650 °C greatly improved film quality and luminescent brightness. This was attributed to the reduction of sulfur vacancies, and a large enhancement in the grain size of these thin-film phosphors. Using this procedure, EL devices with a luminance of 26 cd/m2 at 40 V above the turn-on threshold voltage with chromaticity coordinates of x = 0.17, y = 0.29 were obtained. © 1999 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.60.Fi Electroluminescence
78.66.Li Other semiconductors

Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy

A. G. Norman, J. M. Olson, J. F. Geisz, H. R. Moutinho, A. Mason, M. M. Al-Jassim, and S. M. Vernon

Appl. Phys. Lett. 74, 1382 (1999); http://dx.doi.org/10.1063/1.123557 (3 pages) | Cited 11 times

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(GaAs)1−x(Ge2)x alloy layers, 0<x<0.22, have been grown by metal–organic vapor-phase epitaxy on vicinal (001) GaAs substrates. Transmission electron microscopy revealed pronounced phase separation in these layers, resulting in regions of GaAs-rich zinc-blende and Ge-rich diamond cubic material that appears to lead to substantial band-gap narrowing. For x = 0.1 layers, the phase-separated microstructure consisted of intersecting sheets of Ge-rich material on {115}B planes surrounding cells of GaAs-rich material, with little evidence of antiphase boundaries. Atomic force microscopy revealed {115}B surface faceting associated with the phase separation. © 1999 American Institute of Physics.
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68.55.Nq Composition and phase identification
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
81.05.Hd Other semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
64.75.-g Phase equilibria

Photorefractive properties of potassium lithium niobate crystals

Changxi Yang, Youting Song, Daofan Zhang, Xiaomin Wang, Tang Zhou, Feidi Fan, and Xing Wu

Appl. Phys. Lett. 74, 1385 (1999); http://dx.doi.org/10.1063/1.123558 (3 pages) | Cited 1 time

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We report the photorefractive properties of K3Li2−xNb5+xO15+2x crystals grown by the edge-defined, film-fed technique. The crystals with lithium/niobate ratio from 18.5/51.5 to 26/44 are grown and investigated by two-beam coupling technique. The crystal of composition K3Li1.783Nb5.687O16.61 exhibits an intensity coupling constant of 8 cm−1 and an effective trap density of 1.8×1022 m−3. The photorefractive majority carriers are electrons in as-grown crystals. The grating recording time and erasure time are 530 and 260 ms, respectively, at an intensity of 2 W/cm2. © 1999 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Ln Holographic recording materials; optical storage media
81.10.Fq Growth from melts; zone melting and refining
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Growth mode and strain relaxation of InAs on InP (111)A grown by molecular beam epitaxy

Hanxuan Li, Theda Daniels-Race, and Zhanguo Wang

Appl. Phys. Lett. 74, 1388 (1999); http://dx.doi.org/10.1063/1.123559 (3 pages) | Cited 8 times

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Growth mode and strain relaxation of molecular-beam-epitaxy grown InAs/InAlAs/InP (111)A system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. In direct contrast to the well-studied InAs/GaAs system, our experimental results show that the InAs grown on InAlAs/InP (111)A follows the Stranski–Krastanov mode. Both self-organized InAs quantum dots and relaxed InAs islands are formed depending on the InAs coverage. Intense luminescence signals from both the InAs quantum dots and wetting layer are observed. The luminescence efficiency of (111)A samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on InP (111)A surfaces. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Bs Mechanical and acoustical properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)

Bi: Perfect surfactant for Ge growth on Si(111)?

T. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg, and R. L. Johnson

Appl. Phys. Lett. 74, 1391 (1999); http://dx.doi.org/10.1063/1.123560 (3 pages) | Cited 17 times

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We have investigated the growth of Ge on Bi-terminated Bi:Si(111)-√×√. In-situ measurements of x-ray standing waves, crystal truncation rods and scanning tunneling microscopy clearly show that, at substrate temperatures around 485 °C, smooth and homogeneous Ge films of thicknesses exceeding 30 bilayers Ge can be grown. For Ge coverages larger than 10 bilayers, the Ge film is completely relaxed. Bi is found to segregate to the surface during Ge deposition, and can be removed from the surface after growth by mild annealing at 520 °C as proven by Auger electron spectroscopy. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effect of growth conditions on surface morphology and photoelectric work function characteristics of iridium oxide thin films

Babu R. Chalamala, Yi Wei, Robert H. Reuss, Sanjeev Aggarwal, Bruce E. Gnade, R. Ramesh, John M. Bernhard, Edward D. Sosa, and David E. Golden

Appl. Phys. Lett. 74, 1394 (1999); http://dx.doi.org/10.1063/1.123561 (3 pages) | Cited 35 times

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The effect of thermal growth conditions on the morphology and surface work function of iridium oxide thin films grown by annealing Ir thin films in an O2 ambient is presented. The samples were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, and photoelectric work function measurements. It is found that, with increasing temperature, IrO2 changes from (110) oriented to a mixture of (110) and (200) during the oxide growth. This is manifested as a sharpening of the photoelectric energy distributions at 800 °C. The surface work function was determined to be 4.23 eV using ultraviolet photoelectron spectroscopy. X-ray photoelectron spectroscopy analysis shows that IrO2 starts to form at 600 °C accompanied by surface roughening. Annealing the Ir film at 900 °C in O2 ambient leads to almost complete desorption of the film. © 1999 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
73.30.+y Surface double layers, Schottky barriers, and work functions
81.65.Mq Oxidation
81.40.Gh Other heat and thermomechanical treatments
79.60.Jv Interfaces; heterostructures; nanostructures
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

A monohydride high-index silicon surface: Si(114):H-(2×1)

A. Laracuente, S. C. Erwin, and L. J. Whitman

Appl. Phys. Lett. 74, 1397 (1999); http://dx.doi.org/10.1063/1.123562 (3 pages) | Cited 8 times

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We describe the adsorption of H on Si(114)-(2×1) as characterized by scanning tunneling microscopy and first-principles calculations. Like Si(001)—and despite the relative complexity of the (114) structure—a well-ordered, low-defect-density monohydride surface forms at ∼ 400 °C. Surprisingly, the clean surface reconstruction is essentially maintained on the (2×1) monohydride surface, composed of dimers, rebonded double-layer steps, and nonrebonded double-layer steps, with each surface atom terminated by a single H. This H-passivated surface can also be easily and uniformly patterned by selectively desorbing the H with low-voltage electrons. © 1999 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Mobility enhancement through homogeneous nematic alignment of a liquid-crystalline polyfluorene

M. Redecker, D. D. C. Bradley, M. Inbasekaran, and E. P. Woo

Appl. Phys. Lett. 74, 1400 (1999); http://dx.doi.org/10.1063/1.123563 (3 pages) | Cited 79 times

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Homogeneous alignment of poly(9,9′-dioctylfluorene) films on rubbed polyimide results in a more than one order of magnitude increase in time-of-flight hole mobility normal to the alignment direction. We find μ = 8.5±1×10−3 cm2/V s at an electric field of E = 104 V/cm. Hole transport is found to be nondispersive, indicating a low degree of energetic disorder. © 1999 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
73.50.Dn Low-field transport and mobility; piezoresistance
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures

Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films

J. Zhao, D. S. Mao, Z. X. Lin, X. Z. Ding, B. Y. Jiang, Y. H. Yu, X. H. Liu, and G. Q. Yang

Appl. Phys. Lett. 74, 1403 (1999); http://dx.doi.org/10.1063/1.123564 (3 pages) | Cited 8 times

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Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films implanted with Si and N is reported. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at ∼330 and ∼430 nm were observed from the samples at room temperature with and without annealing. It is found that the PL has a strong dependence on the stabilized N in the Si- and N-coimplanted SiO2 films. The PL may originate from a complex of Si, N, and O. © 1999 American Institute of Physics.
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78.66.Nk Insulators
78.55.Hx Other solid inorganic materials
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effects of stress on the growth of TiSi2 thin films on (001)Si

S. L. Cheng, H. Y. Huang, Y. C. Peng, L. J. Chen, B. Y. Tsui, C. J. Tsai, and S. S. Guo

Appl. Phys. Lett. 74, 1406 (1999); http://dx.doi.org/10.1063/1.123565 (3 pages) | Cited 7 times

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Tensile stress induced by backside CoSi2 films on a silicon substrate has been found to enhance the growth of C54–TiSi2 on (001)Si. In contrast, compressive stress induced by backside oxide films on the silicon substrate was found to retard significantly the growth of C54–TiSi2 on (001)Si. For Ti on stressed (001)Si after rapid thermal annealing at 800 °C for 30 s, the thickness of the C54– TiSi2 films was found to increase and decrease with the tensile and compressive stress levels, respectively. The retarded growth is attributed to the hindrance of the migration of Si through the Ti/Si interface by the compressive stress. On the other hand, the presence of tensile stress promotes the Si diffusion to facilitate the formation of Ti silicide thin films. © 1999 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
68.35.Ct Interface structure and roughness
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
66.30.Ny Chemical interdiffusion; diffusion barriers
85.40.Ls Metallization, contacts, interconnects; device isolation
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