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15 Mar 1999

Volume 74, Issue 11, pp. 1507-1635

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A full vector analysis of near-field luminescence probing of a single quantum dot

Arturo Chavez-Pirson and Sai Tak Chu

Appl. Phys. Lett. 74, 1507 (1999); http://dx.doi.org/10.1063/1.123598 (3 pages) | Cited 8 times

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We solve numerically the three-dimensional vector form of Maxwell’s equation for the situation of near-field excitation and collection of luminescence from a single quantum dot using a scanning near-field optical fiber probe with sub-wavelength resolution. Applying a finite-difference time-domain method, we calculate the complete vector fields emerging from a realistic probe structure, as well as the near-field luminescence image of the dot captured by the same probe. We show that a collimating effect in the high index semiconductor significantly improves the spatial resolution in excitation/collection mode. We find that the spatial resolution, image shape, and collection efficiency of near-field luminescence strongly depend on the orientation of the radiating dipole in the dot. © 1999 American Institute of Physics.
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78.66.-w Optical properties of specific thin films
78.55.-m Photoluminescence, properties and materials
02.70.Bf Finite-difference methods

Hole limited recombination in polymer light-emitting diodes

J. C. Scott, G. G. Malliaras, W. D. Chen, J.-C. Breach, J. R. Salem, P. J. Brock, S. B. Sachs, and C. E. D. Chidsey

Appl. Phys. Lett. 74, 1510 (1999); http://dx.doi.org/10.1063/1.123599 (3 pages) | Cited 41 times

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By comparing the quantum efficiencies of light emission in a series of poly[2-methoxy-5(2′ethyl)hexoxy-phenylenevinylene] diodes with calcium cathodes and various anode metals, we show that, in all cases electrons are the majority carrier and recombination is limited by hole injection. These conclusions are confirmed by the examination of a second series of samples in which alkanethiol barrier layers of varying thickness, are deposited on a gold anode. The highest external quantum efficiency was achieved in these experiments using a clean, semitransparent gold anode. We suggest that electron and hole injection rates play the primary role in determining current balance and that mobilities play a minor role. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance

Field enhancement effect of small Ag particles on the fluorescence from Eu3+-doped SiO2 glass

Tomokatsu Hayakawa, S. Tamil Selvan, and Masayuki Nogami

Appl. Phys. Lett. 74, 1513 (1999); http://dx.doi.org/10.1063/1.123600 (3 pages) | Cited 102 times

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We have investigated the effects of nanometer-sized silver particles on the optical properties of Eu3+ ions in SiO2 glass. Glass samples were prepared by the sol-gel method. The mean particle size and volume fraction of silver particles, which were estimated from UV-VIS absorption spectra using Mie-Drude theory modified by electron mean free path model, rapidly increased with the reduction time of Ag+ up to ∼ 3 min at 900 °C. The fluorescence from Eu3+ ions for the excitation by N2 laser was greatly enhanced in the presence of silver particles of 4.3 nm size. Our experimental results suggest that the origin of enhanced fluorescence is from local field enhancement around Eu3+ ions, owing to the surface plasmon resonance of small silver particles. © 1999 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.40.Pg Disordered solids
61.43.Fs Glasses

Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox

Appl. Phys. Lett. 74, 1516 (1999); http://dx.doi.org/10.1063/1.123601 (3 pages) | Cited 108 times

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A detailed calculation of the amplitude and phase response of ultrathin ZnTe and GaP electro-optic sensors is presented. We demonstrate that the inclusion of the dispersion of the second-order nonlinearity is essential. Significant structures in experimental data can be explained by the theoretical response function. Correcting for the detector characteristics, we determine the precise shape of electromagnetic transients with a time resolution of 20 fs. In addition, we show that ultrafast transport of photocarriers in semiconductors can act as an efficient source for coherent electromagnetic radiation covering the entire far-to-mid-infrared regime. © 1999 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Pw Imaging detectors and sensors
78.47.-p Spectroscopy of solid state dynamics

Periodic poling of RbTiOPO4 for quasi-phase matched blue light generation

H. Karlsson, F. Laurell, and L. K. Cheng

Appl. Phys. Lett. 74, 1519 (1999); http://dx.doi.org/10.1063/1.123602 (3 pages) | Cited 22 times

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RbTiOPO4 has been periodically poled for first-order quasi-phase matching. The poling was monitored using a technique based on the electro-optic effect, which enabled fabrication of high-quality domain gratings for efficient frequency doubling to the blue. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
42.79.Dj Gratings
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.79.Nv Optical frequency converters
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Measurement of spontaneous emission from a two-dimensional photonic band gap defined microcavity at near-infrared wavelengths

R. K. Lee, O. J. Painter, B. D’Urso, A. Scherer, and A. Yariv

Appl. Phys. Lett. 74, 1522 (1999); http://dx.doi.org/10.1063/1.123603 (3 pages) | Cited 27 times

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An active, photonic band gap-based microcavity emitter in the near infrared is demonstrated. We present direct measurement of the spontaneous emission power and spectrum from a microcavity formed using a two-dimensional photonic band gap structure in a half wavelength thick slab waveguide. The appearance of cavity resonance peaks in the spectrum correspond to the photonic band gap energy. For detuned band gaps, no resonances are observed. For devices with correctly tuned band gaps, a two-time enhancement of the extraction efficiency was demonstrated compared to detuned band gaps and unpatterned material. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.30.Hv Other nonmetallic inorganics
78.20.-e Optical properties of bulk materials and thin films

High-efficiency diode lasers at high output power

Jun Wang, Barry Smith, Xiaomin Xie, Xinqiao Wang, and Geoffrey T. Burnham

Appl. Phys. Lett. 74, 1525 (1999); http://dx.doi.org/10.1063/1.123604 (3 pages) | Cited 12 times

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808 nm lasers grown by molecular beam epitaxy show extremely high internal quantum efficiency and low internal loss, which results in very high slope efficiency at a long cavity length, and consequently, extremely high total power conversion efficiency at high continuous-wave power output. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Multimode Er-doped fiber for single-transverse-mode amplification

J. M. Sousa and O. G. Okhotnikov

Appl. Phys. Lett. 74, 1528 (1999); http://dx.doi.org/10.1063/1.123605 (3 pages) | Cited 36 times

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We demonstrate that spatial distribution and doping level of the active ions can be designed to provide efficient fundamental mode selection in multimode erbium-doped fiber at high output power. As a result an improvement in scaling fiber devices with single-transverse-mode output to higher power levels is achieved through an increase in mode–field area. It was found that pump-induced guiding contribute the light propagation in a multimode fiber amplifier. © 1999 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems

Characterization of dynamic optical nonlinearities with pulse trains

L. Misoguti, C. R. Mendonça, and S. C. Zilio

Appl. Phys. Lett. 74, 1531 (1999); http://dx.doi.org/10.1063/1.123606 (3 pages) | Cited 23 times

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We report a simple extension of the Z-scan technique where pulse trains characteristic of a Q-switched and mode-locked Nd:YAG laser are employed to investigate the dynamics of third-order optical nonlinearities. The method allows discriminating between fast and accumulative nonlinearities, and was applied to the investigation of liquid samples, namely chloroform, benzene, and a solution of Disperse Red 1 dye. © 1999 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Jk Polymers and organics
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Bulk periodically poled lithium niobate doped with Yb3+ ions: Growth and characterization

J. Capmany, V. Bermúdez, and E. Diéguez

Appl. Phys. Lett. 74, 1534 (1999); http://dx.doi.org/10.1063/1.123607 (3 pages) | Cited 14 times

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We have obtained Yb3+-doped bulk periodically poled LiNbO3 crystals grown by adding Yb2O3 to the congruent melt. The structures obtained have been characterized by scanning electron microscopy, x-ray fluorescence, optical absorption, and second-harmonic generation. About 100 nm of fundamental tunable quasi-phase-matched second-harmonic generation at the pm/V level is obtained in some of the samples. © 1999 American Institute of Physics.
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42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.10.Fq Growth from melts; zone melting and refining
78.30.Hv Other nonmetallic inorganics

High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability

O. Gauthier-Lafaye, F. H. Julien, S. Cabaret, J.-M. Lourtioz, G. Strasser, E. Gornik, M. Helm, and P. Bois

Appl. Phys. Lett. 74, 1537 (1999); http://dx.doi.org/10.1063/1.123608 (3 pages) | Cited 35 times

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We demonstrate operation of a high-power quantum fountain unipolar laser relying on intersubband emission in optically pumped GaAs/AlGaAs quantum wells. The collected power per facet is as large as 2.3 W at 20 K and 1.5 W at 120 K, which translates into 6.6 W optical power per facet at low temperature accounting for collection efficiency. The maximum operating temperature is 135 K. We also demonstrate that the lasing wavelength can be tuned by as much as Δλ/λ ≈ 2.5% simply by tuning the pump wavelength. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Blue and infrared up-conversion in Tm3+-doped fluorozirconate fiber pumped at 1.06, 1.117, and 1.18 μm

E. B. Mejía, A. N. Starodumov, and Yu. O. Barmenkov

Appl. Phys. Lett. 74, 1540 (1999); http://dx.doi.org/10.1063/1.123609 (3 pages) | Cited 14 times

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We report up-conversion in a fluorozirconate Tm3+-doped fiber pumped by the first and second Stokes components of a Raman-shifted Nd3+:YAG laser. Relative fluorescence in the ultraviolet, blue, red, and near-infrared regions is analyzed as a function of the intensity ratio between the Stokes components. It is demonstrated that side fluorescence in the blue at 480 nm strongly dominates over other transitions when pumping with the two Stokes components. This suggests that high-efficiency blue up-conversion lasing is possible by using this pumping scheme with double-clad, Nd3+- or Yb3+-doped fiber laser pumps. © 1999 American Institute of Physics.  
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42.70.Hj Laser materials
42.55.Wd Fiber lasers
78.55.Hx Other solid inorganic materials

Photorefractive multiple quantum well devices approaching diffraction-limited resolution

A. K. Abeeluck, E. Garmire, E. Canoglu, A. Jehanno, P. Tayebati, and R. N. Sacks

Appl. Phys. Lett. 74, 1543 (1999); http://dx.doi.org/10.1063/1.123610 (3 pages) | Cited 5 times

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We demonstrate that a resolution approaching their fundamental drift-free diffraction limit can be achieved in photorefractive multiple quantum well (MQW) devices by proper choice of the growth and anneal conditions. Previously reported devices are compared with four MQW samples grown at low temperature and annealed after growth at 620 °C for over 3 h. A simple analytical model with and without lateral drift of photocarriers is used to explain the observed experimental resolutions. The growth temperature and annealing procedure of the low-temperature-grown MQW are shown to significantly influence the device resolution by reducing lateral drift. © 1999 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
73.50.Pz Photoconduction and photovoltaic effects
73.50.Dn Low-field transport and mobility; piezoresistance
78.66.-w Optical properties of specific thin films
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Effect of initial plasma geometry and temperature on dynamic plume expansion in dual-laser ablation

Pritish Mukherjee, Shudong Chen, and Sarath Witanachchi

Appl. Phys. Lett. 74, 1546 (1999); http://dx.doi.org/10.1063/1.123611 (3 pages) | Cited 13 times

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Recent experiments have revealed the capability of large-area, uniform film growth using dual-laser ablation. The mechanism of this dynamic plume expansion is investigated in this letter. We report the critical role played by the initial geometry and temperature of the plasma in the subsequent expansion under dual-laser ablation. Initial plasma dimensions in the dual-laser ablation of ZnO are quantified by gated intensified charge-coupled detector-array imaging and combined with a hydrodynamic theoretical expansion model to yield radial thickness profiles for the deposited films. Comparisons with ellipsometric film thickness profiles indicate that the primary factors responsible for increased expansion of the dual-laser ablated plume are an extension of the initial plasma dimension in the axial direction as well as enhanced plasma temperature. © 1999 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Fg Pulsed laser ablation deposition
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.-b Plasma properties
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Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots

J. Phillips, P. Bhattacharya, and U. Venkateswaran

Appl. Phys. Lett. 74, 1549 (1999); http://dx.doi.org/10.1063/1.123612 (3 pages) | Cited 11 times

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We present a study of the hydrostatic-pressure dependence of the photoluminescence from In0.5Al0.5As/Al0.25Ga0.75As self-assembled quantum dots. Three distinct regions of quantum-dot peak-energy shift with pressure are observed and are attributed to energy level crossings and band mixing effects. In addition, a large reduction in photoluminescence linewidth with applied pressure is noted. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
62.50.-p High-pressure effects in solids and liquids
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Room temperature growth of cubic boron nitride

H. Feldermann, R. Merk, H. Hofsäss, C. Ronning, and T. Zheleva

Appl. Phys. Lett. 74, 1552 (1999); http://dx.doi.org/10.1063/1.123613 (3 pages) | Cited 34 times

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Boron nitride thin films were deposited at room temperature with various ion energies by mass selected ion beam deposition on cubic boron nitride (c-BN) previously nucleated on Si (100) substrates at a higher temperature. Selective area diffraction, electron energy loss, and infrared spectroscopy results reveal continued growth of the cubic phase. The reported temperature threshold of about 150 °C for c-BN film formation is therefore unmistakably related to the initial nucleation of c-BN, whereas the growth of c-BN appears to be temperature independent. The latter is in accordance with predictions of the cylindrical thermal spike growth model recently proposed by our group. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.Nq Composition and phase identification
79.20.Kz Other electron-impact emission phenomena
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Scanning room-temperature photoluminescence in polycrystalline silicon

Y. Koshka, S. Ostapenko, I. Tarasov, S. McHugo, and J. P. Kalejs

Appl. Phys. Lett. 74, 1555 (1999); http://dx.doi.org/10.1063/1.123614 (3 pages) | Cited 20 times

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Photoluminescence (PL) mapping was performed on polycrystalline silicon wafers at room temperature. Two PL bands are observed: (1) a band-to-band emission with a maximum at 1.09 eV, and (2) a deep “defect” luminescence at about 0.8 eV. PL mapping of 10 cm×10 cm wafers revealed inhomogeneity of the band-to-band PL intensity which could be correlated to the distribution of minority carrier diffusion length in the wafer bulk. We have also observed that the intensity of the 0.8 eV band is strongest along those grain boundaries where the band-to-band PL is suppressed as well as minority carrier diffusion length. The origin of the 0.8 eV luminescence band is discussed. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
73.61.Cw Elemental semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Decay dynamics of near-infrared photoluminescence from Ge nanocrystals

Shinji Takeoka, Minoru Fujii, Shinji Hayashi, and Keiichi Yamamoto

Appl. Phys. Lett. 74, 1558 (1999); http://dx.doi.org/10.1063/1.123615 (3 pages) | Cited 15 times

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Photoluminescence (PL) decay dynamics of Ge nanocrystals (nc-Ge) 1.2–3.2 nm in average diameter embedded in SiO2 matrices was studied. The samples showed a PL peak in the near-infrared region with strong size dependence. A very fast component (≪1 μs) was found in decay curves for all the samples. For the samples containing relatively large nc-Ge, a slow component of the order of microseconds was also observed. With decreasing the size, the slow component gradually faded out, and the PL intensity increased significantly. The transition from indirect to direct recombination of carriers with decreasing the size is considered to be responsible for the observed PL decay dynamics. © 1999 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata

Appl. Phys. Lett. 74, 1561 (1999); http://dx.doi.org/10.1063/1.123616 (3 pages) | Cited 53 times

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We examined the current–output power characteristics and light emission spectra for columnar-shaped self-assembled InGaAs quantum-dot lasers with a room temperature lasing threshold of 6 mA. Lasing threshold currents became obscure as temperature decreased below 180 K. While lasing occurred with one line including a series of longitudinal modes at room temperature, spectra at 80 K showed broad lasing emission over a range of 50–60 meV. We conclude that dots with different energies start lasing independently at low temperatures due to their spatial localization, while at room temperature the dots contribute to one-line lasing collectively via homogeneous broadening of optical gain. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Integration of nonlinear dielectric barium strontium titanate with polycrystalline yttrium iron garnet

Q. X. Jia, J. R. Groves, P. Arendt, Y. Fan, A. T. Findikoglu, S. R. Foltyn, H. Jiang, and F. A. Miranda

Appl. Phys. Lett. 74, 1564 (1999); http://dx.doi.org/10.1063/1.123617 (3 pages) | Cited 39 times

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Biaxially oriented nonlinear dielectric Ba0.6Sr0.4TiO3 (BST) films have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. We use a structurally and chemically compatible MgO buffer to improve the crystallinity of the BST on polycrystalline YIG substrates, where the biaxially oriented MgO is deposited by an ion-beam assisted-deposition technique. The biaxially oriented BST has a dielectric loss of less than 0.01 and a capacitance tunability of greater than 25% at a direct current bias voltage of 40 V at room temperature. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
75.50.Gg Ferrimagnetics
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.35.Ct Interface structure and roughness

Mn pinning effect in SrS thin-film electroluminescent phosphors

Y. B. Xin, W. Tong, and C. J. Summers

Appl. Phys. Lett. 74, 1567 (1999); http://dx.doi.org/10.1063/1.123618 (3 pages) | Cited 5 times

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An Mn pinning effect which limits the grain size in SrS:Mn thin films is reported. The SrS:Mn films exhibit spectrally identical saturated electroluminescent (EL) and photoluminescent (PL) green emissions at 5400 Å with CIE coordinates of x = 0.33 and y = 0.64. However, although strong PL emission was obtained, the EL emission was very weak. It is proposed that the weak EL emission is attributed to the small grain size caused by a Mn pinning effect. The mechanisms of the grain growth and Mn pinning effect in SrS are proposed and discussed in this letter. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.55.Hx Other solid inorganic materials
78.66.Nk Insulators
68.55.-a Thin film structure and morphology

Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy

D. H. Zhang, W. Shi, P. H. Zhang, S. F. Yoon, and X. Shi

Appl. Phys. Lett. 74, 1570 (1999); http://dx.doi.org/10.1063/1.123619 (3 pages) | Cited 2 times

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We report on the effect of Be doping in the well layers on the absorption of the p-type strained InGaAs/AlGaAs quantum-well infrared photodetectors. It is found that the absorption spectrum originated from the bound-to-bound intersubband transition shifts towards the low-wavelength side as the doping density is increased, due to the band gap shrinkage and widened well width. The full width at half maximum of the absorption spectrum increases with doping density due mainly to the increased roughness at the well–barrier interfaces. The observed results are in good agreement with the estimated values after taking the compressive strain, band gap shrinkage of the well layers, and the increased well width into account. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
61.72.uj III-V and II-VI semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ey III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

1.54 μm Er3+ photoluminescent properties of erbium-doped Si/SiO2 superlattices

Jung H. Shin, Won-hee Lee, and Hak-seung Han

Appl. Phys. Lett. 74, 1573 (1999); http://dx.doi.org/10.1063/1.123620 (3 pages) | Cited 14 times

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The 1.54 μm Er3+ photoluminescent properties of erbium-doped Si/SiO2 superlattices are investigated. Two superlattice films, one with erbium in Si layers and the other with erbium in SiO2 layers, were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition of SiH4 and O2 with cosputtering of erbium and subsequent rapid thermal anneal. Both display Er3+ luminescence, but it is stronger with longer luminescent lifetime and less temperature quenching when erbium is in the SiO2 layer. The results demonstrate that by using quantum structures, nonradiative deexcitation of Er3+ may be suppressed, and that carrier recombination events, which excite Er3+ ions, may be physically separated from Er atoms and still lead to an efficient Er3+ luminescence. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Cy Elemental semiconductors

Spectroscopy of a silicon quantum dot

M. Khoury, M. J. Rack, A. Gunther, and D. K. Ferry

Appl. Phys. Lett. 74, 1576 (1999); http://dx.doi.org/10.1063/1.123621 (3 pages) | Cited 8 times

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We have fabricated a silicon quantum dot embedded in a metal–oxide–semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another. © 1999 American Institute of Physics.
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85.35.Ds Quantum interference devices
73.23.Hk Coulomb blockade; single-electron tunneling
73.61.Cw Elemental semiconductors
85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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Non-Gaussian behavior and anticorrelations in ultrathin gate oxides after soft breakdown

N. Vandewalle, M. Ausloos, M. Houssa, P. W. Mertens, and M. M. Heyns

Appl. Phys. Lett. 74, 1579 (1999); http://dx.doi.org/10.1063/1.123622 (3 pages) | Cited 22 times

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The time dependence of the gate voltage VG(t) after soft breakdown of metal-oxide-semiconductor capacitors with a 2.4 nm SiO2 layer has been measured. It is found that the VG(t) fluctuation distributions are non-Gaussian, but can be described by a Lévy stable distribution. The long-range correlations in VG(t) are investigated within the detrended fluctuation analysis. The Hurst exponent is found to be H = 0.25±0.04 independent of the value of the stress current density J. It is argued that these are universal features of soft breakdown and are due to trapping–detrapping of electrons in and away from the primary percolation path. © 1999 American Institute of Physics.
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73.61.Ng Insulators
77.22.Jp Dielectric breakdown and space-charge effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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