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15 Mar 1999

Volume 74, Issue 11, pp. 1507-1635

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Electronic structure of nanometer-scale quantum dots created by a conductive atomic force microscope tip in resonant tunneling structures

Miyuki Yamauchi, Takeshi Inoshita, and Hiroyuki Sakaki

Appl. Phys. Lett. 74, 1582 (1999); http://dx.doi.org/10.1063/1.123623 (3 pages) | Cited 6 times

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We report on a self-consistent electronic structure calculation for an AlAs/InGaAs/AlAs near-surface quantum well with a conductive atomic force microscope tip placed immediately above and biased at a positive voltage. The result indicates that the application of a modest voltage (∼V) to the tip creates zero-dimensional electron states (quantum dot) in the well with lateral confinement size <10 nm. These discrete states can be directly probed by resonant tunneling using the tip as an electrode. We also propose that p doping in the cap layer is very useful for the achievement of tighter lateral confinement. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
73.23.-b Electronic transport in mesoscopic systems
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Substantial contribution of effective mass variation to electron- acoustic phonon interaction via deformation potential in semiconductor nanostructures

V. I. Pipa, V. V. Mitin, and M. Stroscio

Appl. Phys. Lett. 74, 1585 (1999); http://dx.doi.org/10.1063/1.123624 (3 pages) | Cited 8 times

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Using the approach of deformed ions and the tight binding, we have demonstrated that the interaction of electrons confined in a nanostructure with acoustic phonons in a cubic crystal is described by a deformation potential tensor (DPT) whose symmetry is determined by the geometry of the nanostructure. Here in, we present additional contribution to the DPT which is caused by the deformation dependence of the electron effective mass and it increases as L−2 when the characteristic size of a nanostructure, L, decreases. For narrow GaAs-based quantum wells, this contribution is comparable with and can overcome that from the usual deformation potential coupling. © 1999 American Institute of Physics.
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73.22.-f Electronic structure of nanoscale materials and related systems
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.38.-k Polarons and electron-phonon interactions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs

N. A. Bert, V. V. Chaldyshev, A. A. Suvorova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and P. Werner

Appl. Phys. Lett. 74, 1588 (1999); http://dx.doi.org/10.1063/1.123625 (3 pages) | Cited 12 times

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Delta doping with antimony isovalent impurity has been employed as a precursor for two-dimensional precipitation of excess arsenic in GaAs grown by molecular-beam epitaxy at low substrate temperature (LT-GaAs), and subsequently annealed. LT-GaAs films delta doped with indium isovalent impurity showed previously to provide two-dimensional As cluster sheets were studied for comparison. Small clusters observed by transmission electron microscopy at the Sb delta layers had an unusual lens shape and, probably, nonrhombohedral microstructure. These clusters induced strong local strains in the surrounding GaAs matrix. After annealing under the same conditions, the clusters at the Sb delta layers were found to be bigger than those at the In delta layers. Additionally, nucleation of the arsenic clusters at the Sb delta layers occurs at a relatively low annealing temperature. The observed precipitation features indicate that delta doping with Sb is more effective for two-dimensional precipitation of the excess As in LT-GaAs as compared with In delta doping. © 1999 American Institute of Physics.
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64.75.-g Phase equilibria
61.72.uj III-V and II-VI semiconductors
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing

Effect of surface proximity on end-of-range loop dissolution in silicon

R. Raman, M. E. Law, V. Krishnamoorthy, K. S. Jones, and S. B. Herner

Appl. Phys. Lett. 74, 1591 (1999); http://dx.doi.org/10.1063/1.123626 (3 pages) | Cited 12 times

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The effect of surface proximity on the dissolution of end-of-range dislocation loops in silicon was investigated by transmission electron microscopy (TEM). A layer of dislocation loops was formed at a depth of 2600 Å by annealing a Si wafer amorphized by a 1015 cm−2, 120 keV, and a 1015 cm−2, 30 keV dual Si+ implant for 30 min at 850 °C. The wafer was diced into 1 cm×1 cm pieces and polished by a chemical–mechanical polishing technique to decrease the loop depth to 1800 and 1000 Å. The samples were then furnace annealed at 900 and 1000 °C in N2 gas. Quantitative TEM analysis revealed that the density of small loops decreases as the loop band is brought closer to the surface. The flux of interstitials to the surface varied inversely with loop depth, indicating that the loop dissolution is diffusion limited. Assuming that the loops maintain a supersaturation of interstitials (CIL) around them, and by integrating the measured interstitial flux from the loop layer to the surface, the relative supersaturation of interstitials near the loop layer (CIL/CI∗) was extracted 900 and 1000 °C. © 1999 American Institute of Physics.  
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.Lk Linear defects: dislocations, disclinations
81.65.Ps Polishing, grinding, surface finishing
61.72.Cc Kinetics of defect formation and annealing
85.40.Ry Impurity doping, diffusion and ion implantation technology

Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material

A. Hart, B. S. Satyanarayana, W. I. Milne, and J. Robertson

Appl. Phys. Lett. 74, 1594 (1999); http://dx.doi.org/10.1063/1.123627 (3 pages) | Cited 67 times

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To understand the mechanism of electron field emission from diamond-like carbon, tetrahedral amorphous carbon (ta-C) films were subjected to Ar, H2, and O2 plasma treatments to change their surface condition and were deposited on substrates of different work function. The threshold fields and current densities for undoped ta-C are found to be significantly improved by the plasma treatments, largely due to an increase in emission site density, while little dependence was found on work function of substrate. This suggests that the main barrier to emission from ta-C is at the front surface. © 1999 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.65.-b Surface treatments
73.30.+y Surface double layers, Schottky barriers, and work functions
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
73.20.-r Electron states at surfaces and interfaces

Visible photoluminescence from self-assembled InAs quantum dots embedded in AlAs cladding layers

U. H. Lee, D. Lee, H. G. Lee, S. K. Noh, J. Y. Leem, and H. J. Lee

Appl. Phys. Lett. 74, 1597 (1999); http://dx.doi.org/10.1063/1.123628 (3 pages) | Cited 31 times

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Photoluminescence (PL) from InAs self-assembled quantum dots (QD) embedded in the AlAs matrix was strong and clean around 700 nm. PL efficiency remained quite high at room temperature compared to other QD systems embedded in GaAs cladding layers. Transmission electron microscope pictures from the structure showed a clear formation of relatively small and coherently strained InAs QD. The observed blueshift with accompanying broadening of PL spectra with the increase of excitation power is interpreted in terms of local carrier tunneling in a dense QD system. The PL peak redshift with the increase of temperature was very large, as much as 228 meV. The anomalous shift is interpreted as due to activation-energy differences between dots of different sizes. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Hall potentiometer in the ballistic regime

B. J. Baelus and F. M. Peeters

Appl. Phys. Lett. 74, 1600 (1999); http://dx.doi.org/10.1063/1.123629 (3 pages) | Cited 9 times

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We demonstrate theoretically how a two-dimensional electron gas can be used to probe local potential profiles using the Hall effect. For small magnetic fields, the Hall resistance is inversely proportional to the average potential profile in the Hall cross and is independent of the shape and the position of this profile in the junction. The bend resistance, on the other hand, is much more sensitive on the exact details of the local potential profile in the cross junction. © 1999 American Institute of Physics.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
73.43.-f Quantum Hall effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

A simple lateral transport device of strongly interacting electron and hole layers

S. Shapira, E. H. Linfield, and M. Pepper

Appl. Phys. Lett. 74, 1603 (1999); http://dx.doi.org/10.1063/1.123630 (3 pages) | Cited 5 times

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We have fabricated a GaAs device containing independently contacted electron and hole layers with a separation of 14 nm. The device processing avoids the use of self-aligned contacts and is, therefore, greatly simplified. Only basic processing facilities are required, and leakage problems typical of self-aligned contacts are prevented. The resulting increased device yield overcomes a technological barrier, which has so far limited the experimental research of the system. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.23.-b Electronic transport in mesoscopic systems
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Surface pattern and large low-field magnetoresistance in La0.5Ca0.5MnO3 films

H. B. Peng, B. R. Zhao, Z. Xie, Y. Lin, B. Y. Zhu, Z. Hao, Y. M. Ni, H. J. Tao, X. L. Dong, and B. Xu

Appl. Phys. Lett. 74, 1606 (1999); http://dx.doi.org/10.1063/1.123631 (3 pages) | Cited 14 times

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Formation of an ordered surface structure in La0.5Ca0.5MnO3 films due to the mismatch of the thermal expansion coefficient between the film and the substrate has been investigated. The surface pattern consists of grain chains located on regular orthogonal cracks. The cracks serve as weak-link grain boundaries, and unusually enhanced low-field magnetoresistance (−14.4% in 400 Oe at 90 K) has been observed, which may be explained by spin-polarized tunneling across the grain boundaries. © 1999 American Institute of Physics.
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75.47.De Giant magnetoresistance
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
65.40.De Thermal expansion; thermomechanical effects
61.72.Mm Grain and twin boundaries

Dynamic scaling of magnetic hysteresis in micron-sized Ni80Fe20 disks

W. Y. Lee, B.-Ch. Choi, J. Lee, C. C. Yao, Y. B. Xu, D. G. Hasko, and J. A. C. Bland

Appl. Phys. Lett. 74, 1609 (1999); http://dx.doi.org/10.1063/1.123632 (3 pages) | Cited 17 times

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The scaling of the magnetic hysteresis loop area of permalloy disks (20–400 μm diam) has been studied as a function of applied field amplitude H0 and frequency Ω using scanning Kerr microscopy. An increase in the dynamic coercivity with reduced size is observed for d<100 μm in the frequency range studied (0.1–800 Hz). However, the loop area A follows the scaling relation A∝H0αΩβ, with α ≈ 0.14 and β ≈ 0.50 throughout the entire size range studied. Our results demonstrate that the dynamic scaling behavior is universal even though the lateral size influences the domain structure and magnetic reversal behavior. © 1999 American Institute of Physics.
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75.50.Ss Magnetic recording materials
75.50.Bb Fe and its alloys
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
78.20.Ls Magneto-optical effects
75.60.Ch Domain walls and domain structure

Theory of magnesium/Alq3 interaction in organic light emitting devices

R. Q. Zhang, X. Y. Hou, and S. T. Lee

Appl. Phys. Lett. 74, 1612 (1999); http://dx.doi.org/10.1063/1.123633 (3 pages) | Cited 24 times

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The interaction between the magnesium (Mg) atom and Alq3 molecule in organic light emitting devices has been theoretically studied using the PM3 method of the molecular orbital theory. It has been shown that various interactions can happen when the Mg atom approaches the Alq3 molecule, leading to significant changes in the molecular geometry and electronic structure of Alq3. The resulting configurations with insertion of Mg into the central part of the Alq3 molecule are found to be energetically more favorable than those with Mg forming bond(s) with a benzene ring of Alq3. In agreement with recent experiments, this result shows that the interaction between Mg and the Alq3 molecule depends on the order of deposition. Interestingly, the density of states calculated for these systems reveals that the creation of the new electronic gap states observed in the experiments is mainly relating to the aluminum atomic orbital due to interaction, instead of a direct contribution of Mg. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
31.15.bu Semi-empirical and empirical calculations (differential overlap, Hückel, PPP methods, etc.)
71.20.Rv Polymers and organic compounds
33.15.Bh General molecular conformation and symmetry; stereochemistry

Effect of three-dimensional strain states on magnetic anisotropy of La0.8Ca0.2MnO3 epitaxial thin films

T. K. Nath, R. A. Rao, D. Lavric, C. B. Eom, L. Wu, and F. Tsui

Appl. Phys. Lett. 74, 1615 (1999); http://dx.doi.org/10.1063/1.123634 (3 pages) | Cited 79 times

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Magnetic anisotropy of La0.8Ca0.2MnO3 (LCMO) epitaxial thin films grown on (001) SrTiO3 and LaAlO3 a substrates exhibits strong correlation with substrate-induced strain states as determined by normal and grazing incidence x-ray diffraction. In a 250 Å thick LCMO (001)T film grown on SrTiO3 substrate, an in-plane biaxial magnetic anisotropy is observed, and it is accompanied by a substrate-induced in-plane biaxial tensile strain. In contrast, the observed magnetic easy axis for a 250 Å (110)T film grown on LaAlO3 substrate is perpendicular to the film plane, and the corresponding in-plane strain is biaxial compressive. In both cases the magnetic easy axes are along the crystallographic directions under tensile strain, indicating the presence of a positive magnetostriction. In thicker films (∼4000 Å) grown on both substrates that are nearly strain relaxed, the magnetic easy axis lies in the film plane along the [110] direction of the (001) substrate. © 1999 American Institute of Physics.
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75.30.Gw Magnetic anisotropy
75.70.Ak Magnetic properties of monolayers and thin films
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
75.80.+q Magnetomechanical effects, magnetostriction

90° magneto-optical polar Kerr effect in layered magnetic semiconductor/metal structures

Yu. A. Uspenskii and B. N. Harmon

Appl. Phys. Lett. 74, 1618 (1999); http://dx.doi.org/10.1063/1.123635 (3 pages) | Cited 3 times

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Using analytical and numerical methods, we show that the polar Kerr rotation θK of 90° may be attained in a large class of (magnetic-semiconductor)/metal layered structures just below the absorption edge. The corresponding reflectivity varies over wide limits. For example, in a EuS/Ag multilayer with a small period it is of several percent, while in a thick layer of EuS deposited on Ag it achieves 95%. © 1999 American Institute of Physics.
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78.20.Ls Magneto-optical effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Pp Magnetic semiconductors
78.66.Li Other semiconductors
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Nanofabrication on Si oxide with scanning tunneling microscope: Mechanism of the low-energy electron-stimulated reaction

Nan Li, Tatsuo Yoshinobu, and Hiroshi Iwasaki

Appl. Phys. Lett. 74, 1621 (1999); http://dx.doi.org/10.1063/1.123636 (3 pages) | Cited 10 times

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Nanofabrication on Si oxide with a low-energy electron-beam-stimulated reaction has been demonstrated using scanning tunneling microscopy (STM) and the mechanism of the low-energy electron-induced etching is investigated further. Direct fabrication of a thin Ag film with this low-energy e-beam/STM method was also tested, which shows an additional capability of the nanofabrication technique. Nanometer-scale patterning of rings on a thin Si-oxide layer using this method shows that further progress nanolithography can be expected with the fabricated Si oxide as a mask. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer
79.20.Kz Other electron-impact emission phenomena

Anomalous critical current in double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices

I. P. Nevirkovets, J. B. Ketterson, and S. Lomatch

Appl. Phys. Lett. 74, 1624 (1999); http://dx.doi.org/10.1063/1.123637 (3 pages) | Cited 20 times

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Double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices with a “dirty” middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found. © 1999 American Institute of Physics.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.25.Sv Critical currents

Fabrication of silicon cones and pillars using rough metal films as plasma etching masks

K. Seeger and R. E. Palmer

Appl. Phys. Lett. 74, 1627 (1999); http://dx.doi.org/10.1063/1.123638 (3 pages) | Cited 45 times

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We have developed a simple fabrication process which allows the production of nanoscale silicon structures. Rough silver films are used as an etching mask for reactive ion etching at 10 °C. Variation of the etching parameters, such as the rf power, allows control over the shape of the features; the production of both pillars and cones is possible. The density and diameter of these features are controlled by the etching time. Pillars with diameters as small as 5 nm are reported. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.35.Ct Interface structure and roughness
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Effects of the surface Cu2−xSe phase on the growth and properties of CuInSe2 films

S. Niki, P. J. Fons, A. Yamada, Y. Lacroix, H. Shibata, H. Oyanagi, M. Nishitani, T. Negami, and T. Wada

Appl. Phys. Lett. 74, 1630 (1999); http://dx.doi.org/10.1063/1.123639 (3 pages) | Cited 23 times

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Drastic changes in average molecularities (m = Cu/In) from m≫1 to m = 0.92–0.93 and in hole concentrations from p≫1019 cm−3 to as low as p = 7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions. © 1999 American Institute of Physics.
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68.55.Nq Composition and phase identification
81.05.Hd Other semiconductors
68.35.Dv Composition, segregation; defects and impurities
73.61.Le Other inorganic semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
84.60.Jt Photoelectric conversion

Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors

Whitney Mason and J. R. Waterman

Appl. Phys. Lett. 74, 1633 (1999); http://dx.doi.org/10.1063/1.123640 (3 pages) | Cited 3 times

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Two-color mid wave triple-layer heterojunction HgCdTe detectors were studied using temperature-dependent current–voltage (I–V) measurements, temperature-dependent spectral response measurements, and temperature-dependent noise measurements. The reverse biased dark current shows diffusion-limited behavior for T>125 K. The same data show evidence for generation-recombination-type behavior for the longer wavelength junction at temperatures between 100 and 125 K. For temperatures less than 100 K, the measurements are background limited by photon flux, even though these measurements are performed at nominal zero background. The upper junction shows soft reverse breakdown voltages on the order of about 250 mV, while the bottom junction shows no breakdown for V<500 mV. At 80 K, the R0A product is in excess of 1×106 Ω cm2. In forward bias, the current–voltage characteristics of the lower junction are diffusion limited for all temperatures, while at lower temperatures, the upper junction showed generation-recombination behavior. Optical measurements found a cutoff wavelength of about 4 μm for the lower junction and about 4.5 μm for the upper junction. The spectral crosstalk was less than 3%. At 80 K, the frequency-dependent noise of the shorter wavelength junction showed no dependence on bias, while for the longer wavelength junction, the noise at lower frequencies increased with bias. There is no difference in the noise characteristics when either the photon flux or the temperature is increased. © 1999 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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