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15 Mar 1999

Volume 74, Issue 11, pp. 1507-1635

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Nanofabrication on Si oxide with scanning tunneling microscope: Mechanism of the low-energy electron-stimulated reaction

Nan Li, Tatsuo Yoshinobu, and Hiroshi Iwasaki

Appl. Phys. Lett. 74, 1621 (1999); http://dx.doi.org/10.1063/1.123636 (3 pages) | Cited 10 times

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Nanofabrication on Si oxide with a low-energy electron-beam-stimulated reaction has been demonstrated using scanning tunneling microscopy (STM) and the mechanism of the low-energy electron-induced etching is investigated further. Direct fabrication of a thin Ag film with this low-energy e-beam/STM method was also tested, which shows an additional capability of the nanofabrication technique. Nanometer-scale patterning of rings on a thin Si-oxide layer using this method shows that further progress nanolithography can be expected with the fabricated Si oxide as a mask. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
85.40.Hp Lithography, masks and pattern transfer
79.20.Kz Other electron-impact emission phenomena

Anomalous critical current in double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices

I. P. Nevirkovets, J. B. Ketterson, and S. Lomatch

Appl. Phys. Lett. 74, 1624 (1999); http://dx.doi.org/10.1063/1.123637 (3 pages) | Cited 20 times

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Double-barrier Nb/Al–AlOx–Al–AlOx–Nb devices with a “dirty” middle Al layer were fabricated and investigated. An anomalously large Josephson critical current at low temperatures and a nonmonotonic dependence of the device resistance on the thickness of the middle Al layer were found. © 1999 American Institute of Physics.
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85.25.Cp Josephson devices
74.50.+r Tunneling phenomena; Josephson effects
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.25.Sv Critical currents

Fabrication of silicon cones and pillars using rough metal films as plasma etching masks

K. Seeger and R. E. Palmer

Appl. Phys. Lett. 74, 1627 (1999); http://dx.doi.org/10.1063/1.123638 (3 pages) | Cited 45 times

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We have developed a simple fabrication process which allows the production of nanoscale silicon structures. Rough silver films are used as an etching mask for reactive ion etching at 10 °C. Variation of the etching parameters, such as the rf power, allows control over the shape of the features; the production of both pillars and cones is possible. The density and diameter of these features are controlled by the etching time. Pillars with diameters as small as 5 nm are reported. © 1999 American Institute of Physics.
Show PACS
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
68.35.Ct Interface structure and roughness
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