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15 Mar 1999

Volume 74, Issue 11, pp. 1507-1635

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Effects of the surface Cu2−xSe phase on the growth and properties of CuInSe2 films

S. Niki, P. J. Fons, A. Yamada, Y. Lacroix, H. Shibata, H. Oyanagi, M. Nishitani, T. Negami, and T. Wada

Appl. Phys. Lett. 74, 1630 (1999); http://dx.doi.org/10.1063/1.123639 (3 pages) | Cited 23 times

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Drastic changes in average molecularities (m = Cu/In) from m≫1 to m = 0.92–0.93 and in hole concentrations from p≫1019 cm−3 to as low as p = 7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions. © 1999 American Institute of Physics.
Show PACS
68.55.Nq Composition and phase identification
81.05.Hd Other semiconductors
68.35.Dv Composition, segregation; defects and impurities
73.61.Le Other inorganic semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Li Other semiconductors
78.55.Hx Other solid inorganic materials
84.60.Jt Photoelectric conversion

Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors

Whitney Mason and J. R. Waterman

Appl. Phys. Lett. 74, 1633 (1999); http://dx.doi.org/10.1063/1.123640 (3 pages) | Cited 3 times

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Two-color mid wave triple-layer heterojunction HgCdTe detectors were studied using temperature-dependent current–voltage (I–V) measurements, temperature-dependent spectral response measurements, and temperature-dependent noise measurements. The reverse biased dark current shows diffusion-limited behavior for T>125 K. The same data show evidence for generation-recombination-type behavior for the longer wavelength junction at temperatures between 100 and 125 K. For temperatures less than 100 K, the measurements are background limited by photon flux, even though these measurements are performed at nominal zero background. The upper junction shows soft reverse breakdown voltages on the order of about 250 mV, while the bottom junction shows no breakdown for V<500 mV. At 80 K, the R0A product is in excess of 1×106 Ω cm2. In forward bias, the current–voltage characteristics of the lower junction are diffusion limited for all temperatures, while at lower temperatures, the upper junction showed generation-recombination behavior. Optical measurements found a cutoff wavelength of about 4 μm for the lower junction and about 4.5 μm for the upper junction. The spectral crosstalk was less than 3%. At 80 K, the frequency-dependent noise of the shorter wavelength junction showed no dependence on bias, while for the longer wavelength junction, the noise at lower frequencies increased with bias. There is no difference in the noise characteristics when either the photon flux or the temperature is increased. © 1999 American Institute of Physics.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
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