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15 Mar 1999

Volume 74, Issue 11, pp. 1507-1635

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A full vector analysis of near-field luminescence probing of a single quantum dot

Arturo Chavez-Pirson and Sai Tak Chu

Appl. Phys. Lett. 74, 1507 (1999); http://dx.doi.org/10.1063/1.123598 (3 pages) | Cited 8 times

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We solve numerically the three-dimensional vector form of Maxwell’s equation for the situation of near-field excitation and collection of luminescence from a single quantum dot using a scanning near-field optical fiber probe with sub-wavelength resolution. Applying a finite-difference time-domain method, we calculate the complete vector fields emerging from a realistic probe structure, as well as the near-field luminescence image of the dot captured by the same probe. We show that a collimating effect in the high index semiconductor significantly improves the spatial resolution in excitation/collection mode. We find that the spatial resolution, image shape, and collection efficiency of near-field luminescence strongly depend on the orientation of the radiating dipole in the dot. © 1999 American Institute of Physics.
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78.66.-w Optical properties of specific thin films
78.55.-m Photoluminescence, properties and materials
02.70.Bf Finite-difference methods

Hole limited recombination in polymer light-emitting diodes

J. C. Scott, G. G. Malliaras, W. D. Chen, J.-C. Breach, J. R. Salem, P. J. Brock, S. B. Sachs, and C. E. D. Chidsey

Appl. Phys. Lett. 74, 1510 (1999); http://dx.doi.org/10.1063/1.123599 (3 pages) | Cited 41 times

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By comparing the quantum efficiencies of light emission in a series of poly[2-methoxy-5(2′ethyl)hexoxy-phenylenevinylene] diodes with calcium cathodes and various anode metals, we show that, in all cases electrons are the majority carrier and recombination is limited by hole injection. These conclusions are confirmed by the examination of a second series of samples in which alkanethiol barrier layers of varying thickness, are deposited on a gold anode. The highest external quantum efficiency was achieved in these experiments using a clean, semitransparent gold anode. We suggest that electron and hole injection rates play the primary role in determining current balance and that mobilities play a minor role. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance

Field enhancement effect of small Ag particles on the fluorescence from Eu3+-doped SiO2 glass

Tomokatsu Hayakawa, S. Tamil Selvan, and Masayuki Nogami

Appl. Phys. Lett. 74, 1513 (1999); http://dx.doi.org/10.1063/1.123600 (3 pages) | Cited 103 times

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We have investigated the effects of nanometer-sized silver particles on the optical properties of Eu3+ ions in SiO2 glass. Glass samples were prepared by the sol-gel method. The mean particle size and volume fraction of silver particles, which were estimated from UV-VIS absorption spectra using Mie-Drude theory modified by electron mean free path model, rapidly increased with the reduction time of Ag+ up to ∼ 3 min at 900 °C. The fluorescence from Eu3+ ions for the excitation by N2 laser was greatly enhanced in the presence of silver particles of 4.3 nm size. Our experimental results suggest that the origin of enhanced fluorescence is from local field enhancement around Eu3+ ions, owing to the surface plasmon resonance of small silver particles. © 1999 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
78.40.Pg Disordered solids
61.43.Fs Glasses

Detectors and sources for ultrabroadband electro-optic sampling: Experiment and theory

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox

Appl. Phys. Lett. 74, 1516 (1999); http://dx.doi.org/10.1063/1.123601 (3 pages) | Cited 108 times

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A detailed calculation of the amplitude and phase response of ultrathin ZnTe and GaP electro-optic sensors is presented. We demonstrate that the inclusion of the dispersion of the second-order nonlinearity is essential. Significant structures in experimental data can be explained by the theoretical response function. Correcting for the detector characteristics, we determine the precise shape of electromagnetic transients with a time resolution of 20 fs. In addition, we show that ultrafast transport of photocarriers in semiconductors can act as an efficient source for coherent electromagnetic radiation covering the entire far-to-mid-infrared regime. © 1999 American Institute of Physics.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Pw Imaging detectors and sensors
78.47.-p Spectroscopy of solid state dynamics

Periodic poling of RbTiOPO4 for quasi-phase matched blue light generation

H. Karlsson, F. Laurell, and L. K. Cheng

Appl. Phys. Lett. 74, 1519 (1999); http://dx.doi.org/10.1063/1.123602 (3 pages) | Cited 22 times

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RbTiOPO4 has been periodically poled for first-order quasi-phase matching. The poling was monitored using a technique based on the electro-optic effect, which enabled fabrication of high-quality domain gratings for efficient frequency doubling to the blue. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
42.79.Dj Gratings
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.79.Nv Optical frequency converters
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Measurement of spontaneous emission from a two-dimensional photonic band gap defined microcavity at near-infrared wavelengths

R. K. Lee, O. J. Painter, B. D’Urso, A. Scherer, and A. Yariv

Appl. Phys. Lett. 74, 1522 (1999); http://dx.doi.org/10.1063/1.123603 (3 pages) | Cited 27 times

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An active, photonic band gap-based microcavity emitter in the near infrared is demonstrated. We present direct measurement of the spontaneous emission power and spectrum from a microcavity formed using a two-dimensional photonic band gap structure in a half wavelength thick slab waveguide. The appearance of cavity resonance peaks in the spectrum correspond to the photonic band gap energy. For detuned band gaps, no resonances are observed. For devices with correctly tuned band gaps, a two-time enhancement of the extraction efficiency was demonstrated compared to detuned band gaps and unpatterned material. © 1999 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.30.Hv Other nonmetallic inorganics
78.20.-e Optical properties of bulk materials and thin films

High-efficiency diode lasers at high output power

Jun Wang, Barry Smith, Xiaomin Xie, Xinqiao Wang, and Geoffrey T. Burnham

Appl. Phys. Lett. 74, 1525 (1999); http://dx.doi.org/10.1063/1.123604 (3 pages) | Cited 12 times

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808 nm lasers grown by molecular beam epitaxy show extremely high internal quantum efficiency and low internal loss, which results in very high slope efficiency at a long cavity length, and consequently, extremely high total power conversion efficiency at high continuous-wave power output. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Multimode Er-doped fiber for single-transverse-mode amplification

J. M. Sousa and O. G. Okhotnikov

Appl. Phys. Lett. 74, 1528 (1999); http://dx.doi.org/10.1063/1.123605 (3 pages) | Cited 36 times

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We demonstrate that spatial distribution and doping level of the active ions can be designed to provide efficient fundamental mode selection in multimode erbium-doped fiber at high output power. As a result an improvement in scaling fiber devices with single-transverse-mode output to higher power levels is achieved through an increase in mode–field area. It was found that pump-induced guiding contribute the light propagation in a multimode fiber amplifier. © 1999 American Institute of Physics.
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42.55.Wd Fiber lasers
42.60.By Design of specific laser systems

Characterization of dynamic optical nonlinearities with pulse trains

L. Misoguti, C. R. Mendonça, and S. C. Zilio

Appl. Phys. Lett. 74, 1531 (1999); http://dx.doi.org/10.1063/1.123606 (3 pages) | Cited 23 times

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We report a simple extension of the Z-scan technique where pulse trains characteristic of a Q-switched and mode-locked Nd:YAG laser are employed to investigate the dynamics of third-order optical nonlinearities. The method allows discriminating between fast and accumulative nonlinearities, and was applied to the investigation of liquid samples, namely chloroform, benzene, and a solution of Disperse Red 1 dye. © 1999 American Institute of Physics.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Jk Polymers and organics
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Bulk periodically poled lithium niobate doped with Yb3+ ions: Growth and characterization

J. Capmany, V. Bermúdez, and E. Diéguez

Appl. Phys. Lett. 74, 1534 (1999); http://dx.doi.org/10.1063/1.123607 (3 pages) | Cited 14 times

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We have obtained Yb3+-doped bulk periodically poled LiNbO3 crystals grown by adding Yb2O3 to the congruent melt. The structures obtained have been characterized by scanning electron microscopy, x-ray fluorescence, optical absorption, and second-harmonic generation. About 100 nm of fundamental tunable quasi-phase-matched second-harmonic generation at the pm/V level is obtained in some of the samples. © 1999 American Institute of Physics.
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42.70.Mp Nonlinear optical crystals
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
81.10.Fq Growth from melts; zone melting and refining
78.30.Hv Other nonmetallic inorganics

High-power GaAs/AlGaAs quantum fountain unipolar laser emitting at 14.5 μm with 2.5% tunability

O. Gauthier-Lafaye, F. H. Julien, S. Cabaret, J.-M. Lourtioz, G. Strasser, E. Gornik, M. Helm, and P. Bois

Appl. Phys. Lett. 74, 1537 (1999); http://dx.doi.org/10.1063/1.123608 (3 pages) | Cited 35 times

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We demonstrate operation of a high-power quantum fountain unipolar laser relying on intersubband emission in optically pumped GaAs/AlGaAs quantum wells. The collected power per facet is as large as 2.3 W at 20 K and 1.5 W at 120 K, which translates into 6.6 W optical power per facet at low temperature accounting for collection efficiency. The maximum operating temperature is 135 K. We also demonstrate that the lasing wavelength can be tuned by as much as Δλ/λ ≈ 2.5% simply by tuning the pump wavelength. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Blue and infrared up-conversion in Tm3+-doped fluorozirconate fiber pumped at 1.06, 1.117, and 1.18 μm

E. B. Mejía, A. N. Starodumov, and Yu. O. Barmenkov

Appl. Phys. Lett. 74, 1540 (1999); http://dx.doi.org/10.1063/1.123609 (3 pages) | Cited 14 times

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We report up-conversion in a fluorozirconate Tm3+-doped fiber pumped by the first and second Stokes components of a Raman-shifted Nd3+:YAG laser. Relative fluorescence in the ultraviolet, blue, red, and near-infrared regions is analyzed as a function of the intensity ratio between the Stokes components. It is demonstrated that side fluorescence in the blue at 480 nm strongly dominates over other transitions when pumping with the two Stokes components. This suggests that high-efficiency blue up-conversion lasing is possible by using this pumping scheme with double-clad, Nd3+- or Yb3+-doped fiber laser pumps. © 1999 American Institute of Physics.
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42.70.Hj Laser materials
42.55.Wd Fiber lasers
78.55.Hx Other solid inorganic materials

Photorefractive multiple quantum well devices approaching diffraction-limited resolution

A. K. Abeeluck, E. Garmire, E. Canoglu, A. Jehanno, P. Tayebati, and R. N. Sacks

Appl. Phys. Lett. 74, 1543 (1999); http://dx.doi.org/10.1063/1.123610 (3 pages) | Cited 5 times

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We demonstrate that a resolution approaching their fundamental drift-free diffraction limit can be achieved in photorefractive multiple quantum well (MQW) devices by proper choice of the growth and anneal conditions. Previously reported devices are compared with four MQW samples grown at low temperature and annealed after growth at 620 °C for over 3 h. A simple analytical model with and without lateral drift of photocarriers is used to explain the observed experimental resolutions. The growth temperature and annealing procedure of the low-temperature-grown MQW are shown to significantly influence the device resolution by reducing lateral drift. © 1999 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
73.50.Pz Photoconduction and photovoltaic effects
73.50.Dn Low-field transport and mobility; piezoresistance
78.66.-w Optical properties of specific thin films
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