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15 Mar 1999

Volume 74, Issue 11, pp. 1507-1635

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Pressure-induced energy level crossings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantum dots

J. Phillips, P. Bhattacharya, and U. Venkateswaran

Appl. Phys. Lett. 74, 1549 (1999); http://dx.doi.org/10.1063/1.123612 (3 pages) | Cited 11 times

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We present a study of the hydrostatic-pressure dependence of the photoluminescence from In0.5Al0.5As/Al0.25Ga0.75As self-assembled quantum dots. Three distinct regions of quantum-dot peak-energy shift with pressure are observed and are attributed to energy level crossings and band mixing effects. In addition, a large reduction in photoluminescence linewidth with applied pressure is noted. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
62.50.-p High-pressure effects in solids and liquids
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Room temperature growth of cubic boron nitride

H. Feldermann, R. Merk, H. Hofsäss, C. Ronning, and T. Zheleva

Appl. Phys. Lett. 74, 1552 (1999); http://dx.doi.org/10.1063/1.123613 (3 pages) | Cited 34 times

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Boron nitride thin films were deposited at room temperature with various ion energies by mass selected ion beam deposition on cubic boron nitride (c-BN) previously nucleated on Si (100) substrates at a higher temperature. Selective area diffraction, electron energy loss, and infrared spectroscopy results reveal continued growth of the cubic phase. The reported temperature threshold of about 150 °C for c-BN film formation is therefore unmistakably related to the initial nucleation of c-BN, whereas the growth of c-BN appears to be temperature independent. The latter is in accordance with predictions of the cylindrical thermal spike growth model recently proposed by our group. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.55.Nq Composition and phase identification
79.20.Kz Other electron-impact emission phenomena
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Scanning room-temperature photoluminescence in polycrystalline silicon

Y. Koshka, S. Ostapenko, I. Tarasov, S. McHugo, and J. P. Kalejs

Appl. Phys. Lett. 74, 1555 (1999); http://dx.doi.org/10.1063/1.123614 (3 pages) | Cited 20 times

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Photoluminescence (PL) mapping was performed on polycrystalline silicon wafers at room temperature. Two PL bands are observed: (1) a band-to-band emission with a maximum at 1.09 eV, and (2) a deep “defect” luminescence at about 0.8 eV. PL mapping of 10 cm×10 cm wafers revealed inhomogeneity of the band-to-band PL intensity which could be correlated to the distribution of minority carrier diffusion length in the wafer bulk. We have also observed that the intensity of the 0.8 eV band is strongest along those grain boundaries where the band-to-band PL is suppressed as well as minority carrier diffusion length. The origin of the 0.8 eV luminescence band is discussed. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
73.61.Cw Elemental semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Decay dynamics of near-infrared photoluminescence from Ge nanocrystals

Shinji Takeoka, Minoru Fujii, Shinji Hayashi, and Keiichi Yamamoto

Appl. Phys. Lett. 74, 1558 (1999); http://dx.doi.org/10.1063/1.123615 (3 pages) | Cited 15 times

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Photoluminescence (PL) decay dynamics of Ge nanocrystals (nc-Ge) 1.2–3.2 nm in average diameter embedded in SiO2 matrices was studied. The samples showed a PL peak in the near-infrared region with strong size dependence. A very fast component (≪1 μs) was found in decay curves for all the samples. For the samples containing relatively large nc-Ge, a slow component of the order of microseconds was also observed. With decreasing the size, the slow component gradually faded out, and the PL intensity increased significantly. The transition from indirect to direct recombination of carriers with decreasing the size is considered to be responsible for the observed PL decay dynamics. © 1999 American Institute of Physics.
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78.30.Am Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics

Mitsuru Sugawara, Kohki Mukai, and Yoshiaki Nakata

Appl. Phys. Lett. 74, 1561 (1999); http://dx.doi.org/10.1063/1.123616 (3 pages) | Cited 53 times

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We examined the current–output power characteristics and light emission spectra for columnar-shaped self-assembled InGaAs quantum-dot lasers with a room temperature lasing threshold of 6 mA. Lasing threshold currents became obscure as temperature decreased below 180 K. While lasing occurred with one line including a series of longitudinal modes at room temperature, spectra at 80 K showed broad lasing emission over a range of 50–60 meV. We conclude that dots with different energies start lasing independently at low temperatures due to their spatial localization, while at room temperature the dots contribute to one-line lasing collectively via homogeneous broadening of optical gain. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Integration of nonlinear dielectric barium strontium titanate with polycrystalline yttrium iron garnet

Q. X. Jia, J. R. Groves, P. Arendt, Y. Fan, A. T. Findikoglu, S. R. Foltyn, H. Jiang, and F. A. Miranda

Appl. Phys. Lett. 74, 1564 (1999); http://dx.doi.org/10.1063/1.123617 (3 pages) | Cited 39 times

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Biaxially oriented nonlinear dielectric Ba0.6Sr0.4TiO3 (BST) films have been grown on polycrystalline ferrite yttrium iron garnet (YIG) substrates. We use a structurally and chemically compatible MgO buffer to improve the crystallinity of the BST on polycrystalline YIG substrates, where the biaxially oriented MgO is deposited by an ion-beam assisted-deposition technique. The biaxially oriented BST has a dielectric loss of less than 0.01 and a capacitance tunability of greater than 25% at a direct current bias voltage of 40 V at room temperature. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
75.50.Gg Ferrimagnetics
81.15.Jj Ion and electron beam-assisted deposition; ion plating
68.35.Ct Interface structure and roughness

Mn pinning effect in SrS thin-film electroluminescent phosphors

Y. B. Xin, W. Tong, and C. J. Summers

Appl. Phys. Lett. 74, 1567 (1999); http://dx.doi.org/10.1063/1.123618 (3 pages) | Cited 5 times

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An Mn pinning effect which limits the grain size in SrS:Mn thin films is reported. The SrS:Mn films exhibit spectrally identical saturated electroluminescent (EL) and photoluminescent (PL) green emissions at 5400 Å with CIE coordinates of x = 0.33 and y = 0.64. However, although strong PL emission was obtained, the EL emission was very weak. It is proposed that the weak EL emission is attributed to the small grain size caused by a Mn pinning effect. The mechanisms of the grain growth and Mn pinning effect in SrS are proposed and discussed in this letter. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
78.55.Hx Other solid inorganic materials
78.66.Nk Insulators
68.55.-a Thin film structure and morphology

Effect of Be doping on the absorption of InGaAs/AlGaAs strained quantum-well infrared photodetectors grown by molecular-beam epitaxy

D. H. Zhang, W. Shi, P. H. Zhang, S. F. Yoon, and X. Shi

Appl. Phys. Lett. 74, 1570 (1999); http://dx.doi.org/10.1063/1.123619 (3 pages) | Cited 2 times

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We report on the effect of Be doping in the well layers on the absorption of the p-type strained InGaAs/AlGaAs quantum-well infrared photodetectors. It is found that the absorption spectrum originated from the bound-to-bound intersubband transition shifts towards the low-wavelength side as the doping density is increased, due to the band gap shrinkage and widened well width. The full width at half maximum of the absorption spectrum increases with doping density due mainly to the increased roughness at the well–barrier interfaces. The observed results are in good agreement with the estimated values after taking the compressive strain, band gap shrinkage of the well layers, and the increased well width into account. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
61.72.uj III-V and II-VI semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ey III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.40.Ry Impurity doping, diffusion and ion implantation technology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

1.54 μm Er3+ photoluminescent properties of erbium-doped Si/SiO2 superlattices

Jung H. Shin, Won-hee Lee, and Hak-seung Han

Appl. Phys. Lett. 74, 1573 (1999); http://dx.doi.org/10.1063/1.123620 (3 pages) | Cited 14 times

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The 1.54 μm Er3+ photoluminescent properties of erbium-doped Si/SiO2 superlattices are investigated. Two superlattice films, one with erbium in Si layers and the other with erbium in SiO2 layers, were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition of SiH4 and O2 with cosputtering of erbium and subsequent rapid thermal anneal. Both display Er3+ luminescence, but it is stronger with longer luminescent lifetime and less temperature quenching when erbium is in the SiO2 layer. The results demonstrate that by using quantum structures, nonradiative deexcitation of Er3+ may be suppressed, and that carrier recombination events, which excite Er3+ ions, may be physically separated from Er atoms and still lead to an efficient Er3+ luminescence. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Cy Elemental semiconductors

Spectroscopy of a silicon quantum dot

M. Khoury, M. J. Rack, A. Gunther, and D. K. Ferry

Appl. Phys. Lett. 74, 1576 (1999); http://dx.doi.org/10.1063/1.123621 (3 pages) | Cited 8 times

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We have fabricated a silicon quantum dot embedded in a metal–oxide–semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another. © 1999 American Institute of Physics.
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85.35.Ds Quantum interference devices
73.23.Hk Coulomb blockade; single-electron tunneling
73.61.Cw Elemental semiconductors
85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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