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22 Mar 1999

Volume 74, Issue 12, pp. 1645-1775

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Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films

D. J. DiMaria and J. H. Stathis

Appl. Phys. Lett. 74, 1752 (1999); http://dx.doi.org/10.1063/1.123677 (3 pages) | Cited 41 times

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The non-Arrhenius temperature dependence observed in the charge-to-breakdown data in thin oxides is related to the temperature dependence of the defect buildup in the same films. For each temperature, this defect buildup is studied as a function of the defect generation probability and the total number of defects at breakdown. Each of these quantities is shown to have its own unique temperature dependence, which when combined gives the results observed for the charge-to-breakdown data. As the oxide layers are made thinner, the temperature dependence of the defect generation probability dominates these observations. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.Mq Oxidation

Dielectric exchange: The key repulsive or attractive transient forces between atomic force microscope tips and charged surfaces

O. Teschke and E. F. de Souza

Appl. Phys. Lett. 74, 1755 (1999); http://dx.doi.org/10.1063/1.123678 (3 pages) | Cited 21 times

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Attractive as well as repulsive forces between electrically neutral tips and charged surfaces are measured directly with an atomic force microscope. The exchange of the volume of a region of the electric double layer of a mica surface immersed in water with a dielectric constant ϵDL by the tip with a dielectric constant ϵTip is responsible for the repulsion at large distances from the surface (starting at ∼100 nm, diffuse layer) and followed by an attraction when the tip is immersed in the Stern layer (∼2 nm). The force versus distance measured curves for high approaching velocities (⩾30 μm/s) were fitted to the expression of the dielectric exchange force derived by using a continuum theory for a sharpened pyramidal tip immersed in a spatially variable dielectric constant double-layer electric field. The dielectric exchange effect gives a consistent description of the force acting on the tip by assuming a double-layer region of disorganized water with ϵDL ∼ 80 at distances far away from the surface followed by a region of lower dielectric constant resulting from the alignment of the water molecules due to the mica surface charge. © 1999 American Institute of Physics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
07.79.Lh Atomic force microscopes
77.22.Ch Permittivity (dielectric function)
07.10.Pz Instruments for strain, force, and torque
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