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22 Mar 1999

Volume 74, Issue 12, pp. 1645-1775

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Experimental time-domain study of THz signals from impulse excitation of a horizontal surface dipole

R. W. McGowan and D. Grischkowsky

Appl. Phys. Lett. 74, 1764 (1999); http://dx.doi.org/10.1063/1.123681 (3 pages) | Cited 4 times

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Using optoelectronic techniques with sub-ps resolution, we have characterized the electric-field time-domain response from an impulsively excited, micron-sized dipole antenna on a dielectric surface. When detected by an adjacent dipole antenna 400 μm distant, two primary signals are observed, a far-field pulse reflected from the back surface of the substrate and a surface-wave pulse. The surface-wave pulse appears as two distinct surface-propagating pulses despite originating from the dipole simultaneously. © 1999 American Institute of Physics.
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84.40.Ba Antennas: theory, components and accessories
85.60.-q Optoelectronic devices
84.40.Az Waveguides, transmission lines, striplines

Multilayer thermionic cooler with a varying current density

R. Zhou, D. Dagel, and Y. H. Lo

Appl. Phys. Lett. 74, 1767 (1999); http://dx.doi.org/10.1063/1.123682 (3 pages) | Cited 2 times

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A multilayer structure for thermionic cooling is proposed. This structure uses semiconductor heterojunctions for barriers and a varying current density across the junctions. Compared with the conventional multijunction thermionic cooler with a uniform current density, the design can yield a significantly higher temperature gradient, thus cooling more effectively. © 1999 American Institute of Physics.
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85.80.Fi Thermoelectric devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pulse shaping using nonlinear dielectric SrTiO3

A. T. Findikoglu, D. W. Reagor, K. Ø. Rasmussen, A. R. Bishop, N. Grønbech-Jensen, Q. X. Jia, Y. Fan, and C. Kwon

Appl. Phys. Lett. 74, 1770 (1999); http://dx.doi.org/10.1063/1.124222 (3 pages) | Cited 4 times

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We have studied electromagnetic pulse shaping in coplanar waveguide delay lines made from superconducting YBa2Cu3O7−δ electrodes on nonlinear dielectric SrTiO3 single-crystal substrates. The delay lines exhibited bias- and temperature-dependent nonlinearity and dispersion, with associated pulse-shaping effects. At low temperatures and under certain bias conditions, the interplay of dispersion and nonlinearity has led to stable and compact wave forms, reminiscent of microwave solitons. © 1999 American Institute of Physics.
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84.40.Az Waveguides, transmission lines, striplines
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.72.-h Cuprate superconductors

Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting

T. I. Kamins, D. A. A. Ohlberg, R. Stanley Williams, W. Zhang, and S. Y. Chou

Appl. Phys. Lett. 74, 1773 (1999); http://dx.doi.org/10.1063/1.123683 (3 pages) | Cited 38 times

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Strain energy from the lattice mismatch of a heteroepitaxial system can create “self-assembled,” single-crystal islands irregularly arranged on the surface. Alternatively, features of tens of nanometers can be patterned on a substrate by “nanoimprinting” using a mold and etching. When these two techniques are combined, the small patterned features can interact with the self-assembly process, causing the islands to form at the patterned features. The resulting regular array of very small islands may be useful for future devices. The positioning of single-crystal Ge islands by Si mesas formed by nanoimprinting and etching is demonstrated in this letter. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.40.Hp Lithography, masks and pattern transfer
81.65.Cf Surface cleaning, etching, patterning
81.10.Fq Growth from melts; zone melting and refining
81.05.Cy Elemental semiconductors
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