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22 Mar 1999

Volume 74, Issue 12, pp. 1645-1775

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Laser-induced fluorescence and Langmuir probe determination of Cl2+ and Cl+ absolute densities in transformer-coupled chlorine plasmas

M. V. Malyshev, N. C. M. Fuller, K. H. A. Bogart, V. M. Donnelly, and Irving P. Herman

Appl. Phys. Lett. 74, 1666 (1999); http://dx.doi.org/10.1063/1.123648 (3 pages) | Cited 28 times

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Laser induced fluorescence detection of Cl2+ has been used to track their relative concentration in a high-density inductively (transformer) coupled (TCP) 10 mTorr chlorine plasma as a function of the 13.56 MHz radio frequency (rf) power. This relative Cl2+ number density was compared to the total absolute positive ion density (ni+ = nCl++nCl2+) obtained with a Langmuir probe. Both nCl2+ and ni+ doubled with increasing rf power from 8 to ∼55 W in the capacitively coupled (dim) mode. Above the transition from a capacitively to inductively coupled (bright-mode) plasma at ∼85±35 W, nCl2+ decayed with rf power while ni+ continued to increase. Consequently, Cl2+ is the dominant ion in dim-mode operation and Cl+ is the dominant ion in bright-mode operation, at ni+ ≥ 6×1010 cm−3. With the plasma operating in the reaction ion etch (RIE) mode (the stage powered at 14.56 MHz, and no TCP power) nCl2+ tracked ni+ over the entire range of powers (2–150 W). Thus, Cl2+ is the dominant ion during capacitively coupled RIE operation. © 1999 American Institute of Physics.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.70.Ds Electric and magnetic measurements
52.27.Jt Nonneutral plasmas
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Generation of tunable far-infrared radiation by the interaction of a superluminous ionizing front with an electrically biased photoconductor

D. Hashimshony, A. Zigler, and K. Papadopoulos

Appl. Phys. Lett. 74, 1669 (1999); http://dx.doi.org/10.1063/1.123649 (3 pages) | Cited 11 times

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Tunable radiation in the 0.1 THz to a few THz range by the interaction of a superluminous photoconducting front with an electrostatic “frozen-wave” configuration in a semiconductor is reported. The interaction converts the energy contained in the “frozen wave” into far-infrared radiation, whose frequency depends on the energy in the laser pulse creating the superluminous front and the wavelength of the static wave. © 1999 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
78.30.Fs III-V and II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Et II-VI semiconductors
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