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22 Mar 1999

Volume 74, Issue 12, pp. 1645-1775

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Kinetic shape formation during Gd thin film and Si(100) solid phase reaction

G. L. Molnár, G. Petö, Z. Vértesy, and E. Zsoldos

Appl. Phys. Lett. 74, 1672 (1999); http://dx.doi.org/10.1063/1.123650 (3 pages) | Cited 4 times

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The initial stage of the solid phase reaction between gadolinium thin film and Si(100) substrate was investigated by x-ray diffraction and scanning electron microscopy. The interdiffusion was retarded by deliberate contamination of the Gd/Si interface to slow down the extremely rapid reaction. The surface of the reacted film showed pattern formation in separate spots. The fractal-like development of this rare-earth silicide indicates a kinetic-type process—modified by the structure of the Gd film and by the emerging stresses—rather than a previously proposed nucleation-controlled growth. © 1999 American Institute of Physics.
Show PACS
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
05.45.Df Fractals

Observation of change in shape of oxygen precipitates in high-temperature annealed silicon by transmission electron microscopy

K. Sakai, T. Yamagami, and K. Ojima

Appl. Phys. Lett. 74, 1675 (1999); http://dx.doi.org/10.1063/1.123651 (2 pages) | Cited 2 times

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Changes in size and shape of oxygen precipitates in Czochralski silicon after high-temperature annealing in an Ar atmosphere were observed using a transmission electron microscopy. The oxide precipitates introduced by 750 °C after 4 h annealing in an Ar atmosphere had their corners rounded off by thermal annealing at 1200 °C, and disappeared by 1300 °C although we observed no change in shape at 1050 °C. © 1999 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
81.05.Cy Elemental semiconductors
81.30.Mh Solid-phase precipitation
64.75.-g Phase equilibria
61.72.J- Point defects and defect clusters

Synthesis and properties of Sr2CeO4 blue emission powder phosphor for field emission displays

Yong Dong Jiang, Fuli Zhang, Christopher J. Summers, and Zhong Lin Wang

Appl. Phys. Lett. 74, 1677 (1999); http://dx.doi.org/10.1063/1.123652 (3 pages) | Cited 65 times

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A blue emission powder phosphor Sr2CeO4 for field emission displays was prepared using a chemical coprecipitation technique, which is most suitable for large-scale production. The powders were fired at different temperatures to optimize the properties. Firing the powder at 1200 °C for 2 h gave the highest luminescence efficiency of 5.4 lm/W at 4 kV and 29.0 lm/W at 10 kV. The emission peak of this phosphor is at ∼470 nm and Commission International de l’Eclairage coordinates are x = 0.19, y = 0.26. © 1999 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
85.45.Fd Field emission displays (FEDs)
78.60.Hk Cathodoluminescence, ionoluminescence
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
82.60.Nh Thermodynamics of nucleation

Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate

D. Lacombe, A. Ponchet, S. Fréchengues, V. Drouot, N. Bertru, B. Lambert, and A. Le Corre

Appl. Phys. Lett. 74, 1680 (1999); http://dx.doi.org/10.1063/1.123653 (3 pages) | Cited 14 times

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Strained Ga0.2In0.8As and InAs islands were grown on a InP(113)B substrate by gas source molecular beam epitaxy and examined by transmission electron microscopy and atomic force microscopy. The islands are mainly bounded by the low-index facets {001}, {111}B, and {110} [inclination with respect to the (113)B surface of 25°, 29°, and 31°, respectively]. Some of the consequences of the substrate orientation on the island shape and formation are discussed. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Scaling laws in annealed LiCoOx films

M. U. Kleinke, J. Davalos, C. Polo da Fonseca, and A. Gorenstein

Appl. Phys. Lett. 74, 1683 (1999); http://dx.doi.org/10.1063/1.123654 (3 pages) | Cited 8 times

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The surface morphology evolution due to the annealing process of LiCoOx thin films deposited by rf sputtering is studied by means of an atomic force microscope. Linear relationships were observed in log–log plots of interface width versus window length, as predicted by scaling laws. For as-grown films, only one growth exponent α is evidenced. For annealed films two different slopes α1 and α2 were observed, indicating distinct growth dynamics in the system. The roughness exponent for the as-grown film and the internal morphology of the crystalline grains for the annealed films can be described by a diffusional process. The macrostructure shows characteristics of a Kardar–Parisi–Zhang system [M. Kardar, G. Parisi, Y. C. Zhang, Phys. Rev. Lett. 56, 889 (1986); J. Krim and G. Palasantzas, Int. J. Mod. Phys. B 9, 599 (1995)]. An activation energy Ed = (0.11±0.01) eV is determined for the diffusion process. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
68.35.B- Structure of clean surfaces (and surface reconstruction)

Self-mediated growth of single-crystal and entirely (111)-oriented C60 films on alkali halide substrates

Z. Dai, H. Naramoto, K. Narumi, S. Yamamoto, and A. Miyashita

Appl. Phys. Lett. 74, 1686 (1999); http://dx.doi.org/10.1063/1.123655 (3 pages) | Cited 3 times

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We have studied C60 film growth on alkali halide substrates, KCl (200), KBr (200), and NaCl (200), by using two or three C60 monolayers, which grow at a very low deposition rate, as a self-mediating layer. Continuously and entirely (111)-oriented epitaxial C60 films have been grown in a quite wide temperature range, 40–120 °C, and at very different deposition rates, from 1.5 to 35 Å/min. More over, single-crystal and entirely (111)-oriented C60 films with a grain size of 1–3 μm could be also grown at relative high temperature and low deposition rate, approximately 120 °C and 1.5 Å/min, respectively. © 1999 American Institute of Physics.
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81.05.ub Fullerenes and related materials
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
68.55.-a Thin film structure and morphology

The critical thickness of an epilayer deposited on a semiconductor-on-insulator compliant substrate

Tong-Yi Zhang and Yan-Jing Su

Appl. Phys. Lett. 74, 1689 (1999); http://dx.doi.org/10.1063/1.123656 (3 pages) | Cited 14 times

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The critical thickness of an epilayer grown on a compliant substrate with the semiconductor-on-insulator configuration is investigated on the assumption that sliding boundary conditions hold along the interface between the thin crystal substrate and the amorphous underneath layer. An exact solution determining the critical thickness is formulated using both superposition and Fourier transformation. The results show that the critical thickness increases with the decreases in the thickness of the thin crystal substrate and the elastic constant of the insulator. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.35.Gy Mechanical properties; surface strains

Fractal aggregation and optical absorption of copper nanoparticles prepared by in situ chemical reduction within a Cu2+-polymer complex

C. Huang and C. Z. Yang

Appl. Phys. Lett. 74, 1692 (1999); http://dx.doi.org/10.1063/1.123657 (3 pages) | Cited 12 times

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See Also: Erratum

Show Abstract
A polymer-matrix nanocomposite containing copper particles has been prepared by in situ chemical reduction within a Cu2+-poly(itaconic acid-co-acrylic acid) complex solid film. The copper particle size in the order of 10 nm is controlled by the initial content of the metal ions in the complex. Their fractal pattern and the value of the fractal dimension indicate that there exists a cluster-cluster aggregation process in the present system. Optical absorption spectra of copper-polymer nanocomposites show distinct plasma absorption bands and quantum size effect in the samples. The calculated blueshift of the resonance peak based on a quantum-sphere model gives remarkable agreement with the experimental data as the size of copper particles embedded in the polymer becomes smaller. © 1999 American Institute of Physics.
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81.05.Qk Reinforced polymers and polymer-based composites
78.40.-q Absorption and reflection spectra: visible and ultraviolet
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
78.30.-j Infrared and Raman spectra
05.45.Df Fractals
81.07.-b Nanoscale materials and structures: fabrication and characterization
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