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29 Mar 1999

Volume 74, Issue 13, pp. 1785-1922

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Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity

S. Guha, J. Yang, D. L. Williamson, Y. Lubianiker, J. D. Cohen, and A. H. Mahan

Appl. Phys. Lett. 74, 1860 (1999); http://dx.doi.org/10.1063/1.123693 (3 pages) | Cited 80 times

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High-hydrogen-diluted films of hydrogenated amorphous Si (a-Si:H) 0.5 μm in thickness and optimized for solar cell efficiency and stability, are found to be partially microcrystalline (μc) if deposited directly on stainless steel (SS) substrates but are fully amorphous if a thin n layer of a-Si:H or μc-Si:H is first deposited on the SS. In these latter cases, partial microcrystallinity develops as the films are grown thicker (1.5–2.5 μm) and this is accompanied by sharp drops in solar cell open circuit voltage. For the fully amorphous films, x-ray diffraction (XRD) shows improved medium-range order compared to undiluted films and this correlates with better light stability. Capacitance profiling shows a decrease in deep defect density as growth proceeds further from the substrate, consistent with the XRD evidence of improved order for thicker films. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
84.60.Jt Photoelectric conversion

Raman scattering from a self-organized Ge dot superlattice

J. L. Liu, Y. S. Tang, K. L. Wang, T. Radetic, and R. Gronsky

Appl. Phys. Lett. 74, 1863 (1999); http://dx.doi.org/10.1063/1.123694 (3 pages) | Cited 31 times

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We present a Raman scattering study of a self-organized Ge dot superlattice. The structure, which consists of 20 periods of Ge quantum dots sandwiched by 6 nm Si spacers, is grown on a Si (100) substrate by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy is used to characterize the structural properties of these Ge dots. Raman spectrum shows a downward shift of the Ge–Ge mode, which is attributed to the phonon confinement in the Ge dots. From polarization dependent Raman spectra, strong inter-sub-level transition in the Ge quantum dots is observed. From a simple calculation, the observed peak at 1890 cm−1 in the polarized spectrum is attributed to the transition between the first two heavy hole states of the Ge quantum dots. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals

Lawrence K. Lam, Szu-ke Chen, and Dieter G. Ast

Appl. Phys. Lett. 74, 1866 (1999); http://dx.doi.org/10.1063/1.123695 (3 pages) | Cited 16 times

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The activation energy for nickel-induced lateral crystallization of amorphous silicon heated in an inert atmosphere was investigated, and was found to be 1.75 eV for rapid thermal annealing and 1.86 eV for furnace annealing. Polycrystalline silicon thin-film transistors fabricated in furnace recrystallized and rapid thermal recrystallized material had similar device characteristics, even though the crystallization velocity differed by a factor of 3. © 1999 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
81.05.Gc Amorphous semiconductors
61.72.Cc Kinetics of defect formation and annealing
85.30.Tv Field effect devices
81.05.Cy Elemental semiconductors
81.40.Gh Other heat and thermomechanical treatments

Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors

A. R. Pratt, T. Takamori, and T. Kamijoh

Appl. Phys. Lett. 74, 1869 (1999); http://dx.doi.org/10.1063/1.123696 (3 pages) | Cited 1 time

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Photoluminescence (PL) has been used to study cavity-polariton-mode splitting in a strongly coupled microcavity that utilizes high-contrast oxidized AlAs/GaAs mirrors. The cavity structure was specifically designed to reduce nonradiative recombination at the oxide–semiconductor interfaces and takes full advantage of the high-contrast mirrors to reduce the effective cavity length, and increase the exciton–photon coupling strength. The cavity-polariton splitting measured at room temperature was 6.2 meV, which we believe to be the first ever reported PL splitting measured at room temperature using an oxide-based microcavity. The temperature dependence of the cavity-polariton splitting has also been measured and is well described within a semiclassical polariton model. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Gg Exciton-mediated interactions

Isotopic substitution of N, O, and Si in the thermal oxidation of nitrogen-deposited silicon

I. J. R. Baumvol, T. D. M. Salgado, F. C. Stedile, C. Radtke, and C. Krug

Appl. Phys. Lett. 74, 1872 (1999); http://dx.doi.org/10.1063/1.123697 (3 pages)

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Nitrogen was deposited on the surface of Si(100) wafers by ion implantation at a very low energy (approximately 20 eV), at fluences between 1 and 10×1014 cm−2. The samples were thermally oxidized in dry O2 at temperatures between 800 and 1050 °C. Atomic transport of the chemical species involved in the process was investigated by isotopic tracing of N, O, and Si, using depth profiling with nanometric resolution. The obtained results indicate that: (i) the nitrogen atoms deposited on the Si surface are redistributed during thermal oxidation in O2 within the silicon oxide (oxynitride) film, with maxima at the near-surface and near-interface regions; (ii) during growth, O is fixed not only in the near-interface and near-surface regions like in the thermal growth of SiO2 films on Si, but also in the bulk of the growing oxide (oxynitride) film; and (iii) Si is immobile during the thermal oxidation process. The observed modifications in the mechanisms of thermal growth of SiO2 (SiOxNy) films on Si due to the presence of N are discussed. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.65.Mq Oxidation
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
82.20.Tr Kinetic isotope effects including muonium
61.72.uf Ge and Si
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation

Passivation of boron in diamond by deuterium

R. Zeisel, C. E. Nebel, and M. Stutzmann

Appl. Phys. Lett. 74, 1875 (1999); http://dx.doi.org/10.1063/1.123698 (2 pages) | Cited 41 times

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Capacitance–voltage measurements have been performed on deuterated boron-doped synthetic-type IIb diamond. They demonstrate the electrical passivation of the boron acceptors, which was manifested by a persistent decrease in capacitance after deuteration. The capacitance–voltage dependence is explained by means of a two-layer depletion width model. © 1999 American Institute of Physics.
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81.65.Rv Passivation
72.80.Cw Elemental semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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Controlled underdoping of cuprates using ultraviolet radiation

P. Schwaller, S. Berner, T. Greber, J. Osterwalder, and H. Berger

Appl. Phys. Lett. 74, 1877 (1999); http://dx.doi.org/10.1063/1.123699 (3 pages)

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A method for a controlled change of the doping level of high-temperature superconductors with ultraviolet radiation is presented. With photoemission it is shown that the exposure of Bi2Sr2CaCu2O8+δ samples to the light of a He gas-discharge lamp causes oxygen desorption. From measurements of the Fermi surface, it is found that the oxygen desorption causes a decrease of the doping level of the superconductors. From the desorption cross sections that strongly depend on the photon energy, two different oxygen desorption channels are inferred. This procedure for decreasing the doping level has the advantage that the crystallinity of the sample is not altered and that the doping level can be simultaneously measured by photoelectron spectroscopy. © 1999 American Institute of Physics.
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74.72.-h Cuprate superconductors
74.25.Jb Electronic structure (photoemission, etc.)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
79.60.-i Photoemission and photoelectron spectra
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Nonlinear magneto-optical diffraction from periodic domain structures in magnetic films

N. N. Dadoenkova, I. L. Lyubchanskii, M. I. Lyubchanskii, and Th. Rasing

Appl. Phys. Lett. 74, 1880 (1999); http://dx.doi.org/10.1063/1.123700 (3 pages) | Cited 11 times

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The nonlinear optical diffraction in magnetic films with a laminar domain structure and Bloch-type domain walls is investigated for both s and p polarization of incident light. It is shown that the contribution of magnetic domains and domain walls to the nonlinear diffraction can be separated by a polarization analysis of the scattered light. © 1999 American Institute of Physics.
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75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Ch Domain walls and domain structure
78.20.Ls Magneto-optical effects
42.65.-k Nonlinear optics
42.25.Fx Diffraction and scattering
42.25.Ja Polarization

Width dependence of giant magnetoresistance in Cu/Co multilayer nanowires

J. A. Katine, A. Palanisami, and R. A. Buhrman

Appl. Phys. Lett. 74, 1883 (1999); http://dx.doi.org/10.1063/1.123701 (3 pages) | Cited 11 times

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Electron beam lithography and ion milling have been used to pattern sputtered Cu/Co multilayer wires ranging in width from 750 to 35 nm. Samples having Cu thicknesses which correspond to the first, second, and third antiferromagnetic coupling maxima have been measured. Contrary to expectation, enhancement in the amplitude of the giant magnetoresistance with decreasing width was not observed. © 1999 American Institute of Physics.
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75.47.De Giant magnetoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Cd Deposition by sputtering
81.20.Wk Machining, milling

Ferromagnetism at room temperature in La0.8Ca0.2MnO3 thin films

R. Shreekala, M. Rajeswari, R. C. Srivastava, K. Ghosh, A. Goyal, V. V. Srinivasu, S. E. Lofland, S. M. Bhagat, M. Downes, R. P. Sharma, S. B. Ogale, R. L. Greene, R. Ramesh, T. Venkatesan, R. A. Rao, et al.

Appl. Phys. Lett. 74, 1886 (1999); http://dx.doi.org/10.1063/1.123702 (3 pages) | Cited 28 times

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Anomalously high metal–insulator transition temperature Tp and ferromagnetic transition temperature Tc have been observed in thin films of La0.8Ca0.2MnO3. Ferromagnetic resonance signals from microwave studies are observed at room temperature (well above Tc) suggesting the presence of multiple magnetic spin systems. The Tp and Tc values are higher than that of La0.67Ca0.33MnO3 which have the highest Tp and Tc according to the bulk phase diagram. These results suggest that properties well beyond those seen in the bulk phase diagram may be achievable in thin films of the manganites. © 1999 American Institute of Physics.
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75.50.Dd Nonmetallic ferromagnetic materials
75.70.Ak Magnetic properties of monolayers and thin films
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.47.De Giant magnetoresistance
71.30.+h Metal-insulator transitions and other electronic transitions
72.60.+g Mixed conductivity and conductivity transitions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)

Magnetic and hardness properties of nanostructured Ni–Co films deposited by a nonaqueous electroless method

G. M. Chow, J. Ding, J. Zhang, K. Y. Lee, D. Surani, and S. H. Lawrence

Appl. Phys. Lett. 74, 1889 (1999); http://dx.doi.org/10.1063/1.123703 (3 pages) | Cited 19 times

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Nanostructured NixCo100−x films were deposited on Cu substrates by reducing the constituent metal salts in refluxing ethylene glycol at 194 °C. The average crystallite size increased with x, and reached a maximum of 64 nm when x = 100. The coercivity Hc of the films measured in the direction perpendicular (⊥) to the plane of the film was higher than that in the parallel (∥) direction. For the sample of x = 50, Hc⊥ was 379 Oe, which was six times that of Hc∥. Saturation magnetization Ms in the film plane was 1016 emu/cm3, and the remanent magnetization Mr 636 emu/cm3, giving a squareness ratio of 0.63. This film also had a Vickers hardness of 193. © 1999 American Institute of Physics.
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75.50.Kj Amorphous and quasicrystalline magnetic materials
68.60.Bs Mechanical and acoustical properties
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.07.-b Nanoscale materials and structures: fabrication and characterization
62.20.Qp Friction, tribology, and hardness
81.15.Pq Electrodeposition, electroplating
75.50.Cc Other ferromagnetic metals and alloys
75.30.Gw Magnetic anisotropy

2 THz bandwidth electrical pulses on Au and YBa2Cu3Ox transmission lines

Christian J. Osbahr, Britt H. Larsen, Thorsten Holst, Yueqiang Shen, and Søren R. Keiding

Appl. Phys. Lett. 74, 1892 (1999); http://dx.doi.org/10.1063/1.123704 (3 pages) | Cited 5 times

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An amorphous photoconductive GaAs switch is laser ablated directly onto a superconducting YBa2Cu3Ox coplanar transmission line structure. Illuminating the switch with femtosecond laser pulses generates electrical pulses containing frequency components up to 2 THz. The pulses are detected by photoconductive sampling and have a full width at half maximum of 0.4 ps without deconvolution. Measurements have been performed on both YBa2Cu3Ox and Au/YBa2Cu3Ox transmission lines and we find attenuation and dispersion coefficients to be larger on YBa2Cu3Ox at 77 K than on Au. Furthermore, the integrated photoconductive switch is used to demonstrate that subpicosecond pulses can propagate through small gaps in the transmission lines with minimum attenuation and dispersion. © 1999 American Institute of Physics.
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84.40.Az Waveguides, transmission lines, striplines
85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
85.60.-q Optoelectronic devices
74.72.-h Cuprate superconductors
81.15.Fg Pulsed laser ablation deposition
85.40.Sz Deposition technology

Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels

A. Matulionis, V. Aninkevičius, J. Liberis, I. Matulionienė, J. Berntgen, K. Heime, and H. L. Hartnagel

Appl. Phys. Lett. 74, 1895 (1999); http://dx.doi.org/10.1063/1.123705 (3 pages) | Cited 5 times

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Energy loss by hot electrons in lattice-matched and strained InGaAs layers is estimated from experimental data on microwave noise obtained for InP-based quantum well channels containing two-dimensional electron gas. A strong correlation of the energy relaxation time and the lattice strain is observed. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Td Noise processes and phenomena
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Magnetoresistance of single-domain ferromagnetic particles

J. Aumentado and V. Chandrasekhar

Appl. Phys. Lett. 74, 1898 (1999); http://dx.doi.org/10.1063/1.123706 (3 pages) | Cited 17 times

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We have performed magnetoresistance measurements on single-domain, submicron elliptical Ni particles using nonmagnetic probes in a four-probe geometry at liquid-helium temperatures. In the smallest particles, the magnetoresistance shows sharp jumps which are associated with the switching of individual domains. Using an anisotropic magnetoresistance model, we can reconstruct hysteresis loops of the normalized magnetization. The remanent magnetization in zero applied magnetic field is typically 15% less than the saturation magnetization. This relaxation of the magnetization may be due to surface effects or crystal grain structure in the particles. © 1999 American Institute of Physics.
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75.50.Tt Fine-particle systems; nanocrystalline materials
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.60.Ch Domain walls and domain structure
75.50.Cc Other ferromagnetic metals and alloys
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Transverse strain responses in the electrostrictive poly(vinylidene fluoride–trifluorethylene) copolymer

Z.-Y. Cheng, T.-B. Xu, Vivek Bharti, Shexi Wang, and Q. M. Zhang

Appl. Phys. Lett. 74, 1901 (1999); http://dx.doi.org/10.1063/1.123707 (3 pages) | Cited 41 times

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A large transverse electrostrictive strain S1 with a high elastic strain energy density is observed along the drawing direction in the stretched poly(vinylidene fluoride–trifluorethylene) copolymer film under a proper electron irradiation treatment condition, which results in a ratio of ∣S1/S3∣ larger than 1 where S3 is the longitudinal strain. In contrast, unstretched films generate a relatively small transverse strain with a small ratio of ∣S1/S3∣ (∼0.25). Hence, in this copolymer system, the ratio of ∣S1/S3∣ can be varied over a broad range. In addition, a large volume strain, which amounts to about half of the longitudinal strain, is observed in the films investigated. © 1999 American Institute of Physics.
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77.84.Jd Polymers; organic compounds
77.65.Ly Strain-induced piezoelectric fields
77.22.Ej Polarization and depolarization
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
61.80.Fe Electron and positron radiation effects
61.82.Pv Polymers, organic compounds

Crystal structures and ferroelectric properties of SrBi2Ta2O9 and Sr0.8Bi2.2Ta2O9

Y. Shimakawa, Y. Kubo, Y. Nakagawa, T. Kamiyama, H. Asano, and F. Izumi

Appl. Phys. Lett. 74, 1904 (1999); http://dx.doi.org/10.1063/1.123708 (3 pages) | Cited 204 times

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Crystal structures of ferroelectric materials of stoichiometric SrBi2Ta2O9 (TC = 300 °C) and Sr-deficient-and-Bi-excess Sr0.8Bi2.2Ta2O9 (TC = 400 °C) were refined by neutron powder diffraction. Bi2O2 layer and TaO6 octahedra are considerably distorted and atomic displacements along the a axis cause ferroelectric spontaneous polarization. In Sr0.8Bi2.2Ta2O9, both Bi substitution and cation vacancies at the Sr site were revealed and a chemical composition of (Sr0.82Bi0.12)Bi2Ta2O9.0 was obtained. The calculated polarization of Sr0.8Bi2.2Ta2O9 is larger than that of the stoichiometric sample, which is consistent with observations of remanent polarization in thin-film capacitors. The Bi substitution and the cation vacancies at the Sr site enhance structural distortion in the TaO6 octahedra and lead to the larger ferroelectric spontaneous polarization and the higher Curie temperature. © 1999 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
61.72.J- Point defects and defect clusters
61.66.Bi Elemental solids
61.66.Dk Alloys
61.66.Fn Inorganic compounds

Differences in nature of defects between SrBi2Ta2O9 and Bi4Ti3O12

B. H. Park, S. J. Hyun, S. D. Bu, T. W. Noh, J. Lee, H.-D. Kim, T. H. Kim, and W. Jo

Appl. Phys. Lett. 74, 1907 (1999); http://dx.doi.org/10.1063/1.123709 (3 pages) | Cited 97 times

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X-ray photoemission spectroscopy measurements were executed to compare the nature of defects in SrBi2Ta2O9 (SBT) and Bi4Ti3O12 (BTO) films. In the SBT film, it was found that the oxygen ions at the metal–oxygen octahedra were much more stable than those at the Bi2O2 layers. On the other hand, for the BTO film, oxygen vacancies could be induced both at the titanium–oxygen octahedra and at the Bi2O2 layers. We suggested that the difference in stability of the metal–oxygen octahedra should be related to different fatigue behaviors of the SBT and the BTO films. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.72.J- Point defects and defect clusters
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

Does freezing in PbMg1/3Nb2/3O3 relaxor manifest itself in nonlinear dielectric susceptibility?

A. K. Tagantsev and A. E. Glazounov

Appl. Phys. Lett. 74, 1910 (1999); http://dx.doi.org/10.1063/1.123710 (3 pages) | Cited 29 times

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A possible anomaly in the temperature dependence of nonlinear dielectric susceptibility χnl of relaxor ferroelectrics related with the freezing phase transition was investigated. First, based on the phenomenological approach, the anomaly in the χnl was analyzed, including its shape, sign, and crystalline anisotropy. Second, the theoretical results were applied to the analysis of experimental data on nonlinear dielectric permittivity of single crystals of PbMg1/3Nb2/3O3 (PMN) relaxor. It was concluded that in contrast to earlier publications, there is no evidence for the anomaly in χnl(T) of PMN related with the freezing transition. © 1999 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point
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Three-color organic light-emitting diodes patterned by masked dye diffusion

Florian Pschenitzka and J. C. Sturm

Appl. Phys. Lett. 74, 1913 (1999); http://dx.doi.org/10.1063/1.123711 (3 pages) | Cited 40 times

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A method of masked dye diffusion to locally pattern the emissive color of organic light-emitting devices (OLEDs) over a large area is introduced. By using a large-area diffusion source, which may be a spin-coated doped polymer film, the entire process of masked diffusion of dye into a polymer film of an OLED to create an integrated three-color device has been demonstrated at atmospheric pressure. The materials used to demonstrate this method are the polymer poly(9-vinylcarbazole) combined with electron transport molecules, and the dyes bimane, coumarin 6, and Nile red. © 1999 American Institute of Physics.  
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85.60.Jb Light-emitting devices
85.60.Pg Display systems
66.30.J- Diffusion of impurities
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
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In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist

William J. Mitchell and Evelyn L. Hu

Appl. Phys. Lett. 74, 1916 (1999); http://dx.doi.org/10.1063/1.123712 (3 pages) | Cited 4 times

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Using Auger electron spectroscopy and scanning electron microscopy, we have shown that it is possible to pattern thin films of titanium oxide on GaAs substrates by first condensing multilayers of titanium isopropoxide [Ti(–OC3H7)4] on a cold (<−20 °C) GaAs(001) surface and then exposing the condensed precursor film to a scanning electron beam (incident energy and flux of 10 keV and 0.18 mC/cm2/s). Under these conditions, the electron-beam-induced deposition rate was found to be constant and equal to a high value of 5.5±1.5 Å/s. Deposition of thick films (i.e., greater than 50 Å) results after electron exposures above 2 mC/cm2; however, increased carbon incorporation was observed within these thicker oxide films. The remaining unexposed precursor was found to desorb upon annealing to room temperature, ensuring selective area pattern definition. Efficient transfer of the written patterns to the underlying GaAs substrate was observed after etching in chlorine (etch depths of 8500 Å were measured after etching for 5 min at 180 °C in 2×10−4 Torr of Cl2). © 1999 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Sz Deposition technology
79.20.Fv Electron impact: Auger emission

Acoustic scattering of impulsive geometrical waves by a glass sphere in water

V. Latard, A. Merlen, V. Preobazhenski, and A. C. Ahyi

Appl. Phys. Lett. 74, 1919 (1999); http://dx.doi.org/10.1063/1.123713 (3 pages) | Cited 1 time

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An elastic sphere is acoustically excited in water by a punctual pulse source. A high-speed visualization system allows the identification of the geometrical waves diffused in the fluid. The visualization results are correlated with a time space representation of pressure measurements in the fluid and with a numerical simulation. The experimental technique presented here allows a very accurate description of the acoustic diffusion on elastic bodies even for ultrasonic frequencies. © 1999 American Institute of Physics.
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43.20.Fn Scattering of acoustic waves
43.30.-k Underwater sound
43.20.Ye Measurement methods and instrumentation
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Addendum: “Solid phase epitaxial regrowth in ion-beam-amorphized α quartz” [Appl. Phys. Lett. 73, 1349 (1998)]

F. Roccaforte, W. Bolse, and K. P. Lieb

Appl. Phys. Lett. 74, 1922 (1999); http://dx.doi.org/10.1063/1.123961 (1 page) | Cited 5 times

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Abstract Unavailable
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68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
61.43.Er Other amorphous solids
61.80.Jh Ion radiation effects
61.72.Cc Kinetics of defect formation and annealing
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