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5 Apr 1999

Volume 74, Issue 14, pp. 1933-2093

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Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters

C. Q. Xu, K. Fujita, Y. Ogawa, and T. Kamijoh

Appl. Phys. Lett. 74, 1933 (1999); http://dx.doi.org/10.1063/1.123732 (3 pages) | Cited 6 times

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Temperature and polarization characteristics of 1.55-μm-band LiNbO3 quasiphase-matched (QPM) wavelength converters have been studied by second-harmonic generation (SHG). It is found that the shift of the QPM wavelength is linearly proportional to temperature over the measured temperature range between 10 and 40 °C, with a temperature tolerance (corresponding to a 3 dB reduction in the QPM conversion efficiency) of greater than 10 °C for a 10-mm-long device. With respect to the angle θ of the injected fundamental light polarization direction, the SHG power changes as a function of sin4 θ, with a tolerance of over 60°. Theoretical explanations for the observed results are also presented. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Large Schottky barriers for Ni/p-GaN contacts

Kenji Shiojima, Tomoya Sugahara, and Shiro Sakai

Appl. Phys. Lett. 74, 1936 (1999); http://dx.doi.org/10.1063/1.123733 (3 pages) | Cited 22 times

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Large Schottky barriers were measured for Ni contacts formed on low Mg-doped p-GaN. In order to improve leaky Schottky characteristics, low-Mg doping was examined. This provided atomically flat surfaces and a low dislocation density of 5.5×108 cm−2. The Schottky barrier height (qϕB) as high as 2.4±0.2 eV and n values of 1.84±0.06 were obtained from current–voltage measurements. These results are in good agreement with the prediction that the sum of qϕB of n and p types adds up to the band gap. In the capacitance–voltage measurements, a transient response of capacitance was observed. This indicates that the evaluation of deep levels close to the valence band is possible, which could result in improvement of p-GaN growth. © 1999 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.61.Ey III-V semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.35.Ct Interface structure and roughness

Interference effects in bilayer organic light-emitting diodes

S. K. So, W. K. Choi, L. M. Leung, and K. Neyts

Appl. Phys. Lett. 74, 1939 (1999); http://dx.doi.org/10.1063/1.123734 (3 pages) | Cited 48 times

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The electroluminescent spectra and the light intensities of Alq3-based organic light-emitting diodes were measured as a function of the thickness of the light-emitting layer. A maximum in the light intensity occurs when the thickness of this layer is approximately 600 Å, whereas a minimum in the light intensity occurs at about 1400 Å. The electroluminescent spectra were also found to vary strongly with the thickness of the light-emitting layer. Computer simulation, based on wide-angle interference of light-emitting dipoles from a reflective mirror, can account for the experimental observations. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
78.66.-w Optical properties of specific thin films
78.60.Fi Electroluminescence

Near-field second harmonic imaging of lead zirconate titanate piezoceramic

Igor I. Smolyaninov, Chi H. Lee, and Christopher C. Davis

Appl. Phys. Lett. 74, 1942 (1999); http://dx.doi.org/10.1063/1.123735 (3 pages) | Cited 14 times

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A technique to characterize the local nonlinearity of lead zirconate titanate piezoceramic (PZT) has been developed. Near-field optical microscopy has been used to image variations in local optical second harmonic generation from the PZT surface. Individual crystalline grains and grain boundaries are the main features visible in the images. The technique allows us to determine the local poling direction of individual submicrometer size crystalline grains of ceramic by near-field second harmonic imaging at different angles of incidence and polarization states of fundamental excitation light. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
61.72.Mm Grain and twin boundaries
42.79.Nv Optical frequency converters
77.22.Ej Polarization and depolarization

Resonant second harmonic generation in ZnSe bulk microcavity

Vittorio Pellegrini, Raffaele Colombelli, Iacopo Carusotto, Fabio Beltram, Silvia Rubini, Roberta Lantier, Alfonso Franciosi, Claudio Vinegoni, and Lorenzo Pavesi

Appl. Phys. Lett. 74, 1945 (1999); http://dx.doi.org/10.1063/1.123736 (3 pages) | Cited 18 times

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Room-temperature resonant second harmonic generation is demonstrated in a ZnSe bulk microcavity with Si3N4/SiO2 Bragg reflectors. The resonance occurs at the second harmonic wavelength in the blue-green spectral region and yields an enhancement of one order of magnitude in the second harmonic process. Tunability of the resonant effect between 480 and 500 nm is achieved by varying the angle of incidence. © 1999 American Institute of Physics.
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78.66.Hf II-VI semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Laser-induced selective area band-gap tuning in Si/Si1−xGex microstructures

J. J. Dubowski, N. Rowell, G. C. Aers, H. Lafontaine, and D. C. Houghton

Appl. Phys. Lett. 74, 1948 (1999); http://dx.doi.org/10.1063/1.123737 (3 pages) | Cited 6 times

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A one-step process is reported for selective area band-gap tuning of as-grown quantum well (QW) material consisting of Si/Si1−xGex microstructures. The process takes advantage of the ability of increasing the local temperature of the wafer, in excess of 900 °C, by applying the beam of a high-power cw Nd:YAG laser, which leads to controlled intermixing between the quantum well and barrier material. A microstructure with the band-gap blueshifted by 142 meV has been fabricated from as-grown 980 meV band-gap material. The results indicate that this approach has the potential for “writing” of Si/Si1−xGex QW microstructures with the selectively tuned band gap required in the fabrication of optoelectronic integrated circuits. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Li Other semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.Fx Diffusion; interface formation
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing

Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate

M. Peter, R. Kiefer, F. Fuchs, N. Herres, K. Winkler, K.-H. Bachem, and J. Wagner

Appl. Phys. Lett. 74, 1951 (1999); http://dx.doi.org/10.1063/1.123738 (3 pages) | Cited 16 times

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We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1−xInxAs/GaAs1−ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 μm, the index-guided diode lasers displayed cw laser emission at 1.71 μm up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors

Diode-pumped self-frequency doubling in a Nd3+:YCa4O(BO3)3 laser

J. M. Eichenholz, D. A. Hammons, L. Shah, Q. Ye, R. E. Peale, M. Richardson, and B. H. T. Chai

Appl. Phys. Lett. 74, 1954 (1999); http://dx.doi.org/10.1063/1.123739 (3 pages) | Cited 34 times

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We report efficient, diode-pumped, self-frequency doubling (SFD) in the newly developed laser crystal Nd3+:YCa4O(BO3)3. More than 350 mW of fundamental output power at 1060 nm was achieved with a slope efficiency of 51%. With one watt of absorbed pump power, 62 mW of green cw laser emission at 530 nm was observed with proper phase matching. This initial performance, and the good optical properties of the crystalline host, are encouraging for the development of a high power diode-pumped SFD visible light laser source. © 1999 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.70.Hj Laser materials
42.79.Nv Optical frequency converters

Influence of p-type doping on the degradation of ZnSe laser diodes

D. Albert, J. Nürnberger, V. Hock, M. Ehinger, W. Faschinger, and G. Landwehr

Appl. Phys. Lett. 74, 1957 (1999); http://dx.doi.org/10.1063/1.123740 (3 pages) | Cited 29 times

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We present results of optical degradation experiments on blue-green ZnSe-based diode laser structures. A micro-focused wavelength selectable laser is used for degradation and the luminescence from the degrading region is simultaneously recorded. The degradation speed at a given optical power density depends strongly on the doping of the structure and on the photon energy: undoped structures do not degrade, while the threshold photon energy to induce degradation depends on the degree of compensation in the p-doped layers. However, at high photon energies, an improvement in compensation does not slow down the degradation process, leading to the suggestion that the nitrogen acceptor itself is unstable under these conditions. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.05.Dz II-VI semiconductors
71.55.Gs II-VI semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
61.66.Fn Inorganic compounds
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.60.Fi Electroluminescence
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

A model of radiative recombination in n-type porous silicon–aluminum Schottky junction

M. Balucani, V. Bondarenko, L. Franchina, G. Lamedica, V. A. Yakovtseva, and A. Ferrari

Appl. Phys. Lett. 74, 1960 (1999); http://dx.doi.org/10.1063/1.123741 (3 pages) | Cited 4 times

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It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junction has been developed for this n-type porous silicon–aluminium Schottky junction to explain the higher efficiency of these electroluminescence devices in comparison with that from a reverse biased p-n junction structure. Through this model, it is possible to understand the steps that are necessary to improve the efficiency of porous-aluminum Schottky junction. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
73.40.Ns Metal-nonmetal contacts
78.60.Fi Electroluminescence
78.66.Bz Metals and metallic alloys
73.30.+y Surface double layers, Schottky barriers, and work functions

Semiconductor photonic dots: Visible wavelength-sized optical resonators

I. Suemune, A. Ueta, A. Avramescu, S. Tanaka, H. Kumano, and K. Uesugi

Appl. Phys. Lett. 74, 1963 (1999); http://dx.doi.org/10.1063/1.123714 (3 pages) | Cited 7 times

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Here we describe a strategy toward constructing semiconductor photonic dots in the ultraviolet to blue region. An array of ZnS dots was grown on a GaAs substrate with a selective growth method. The ZnS dots have a pyramidal structure with the base plane of 800 nm square and the height of 300 nm. The {034} crystallographic planes form the sidewalls of the pyramids. Therefore, the size of the pyramidal dots is uniquely determined by the mask patterning. The optical reflection spectra showed clear resonance peaks which are reasonably assigned by the calculation of the resonance modes. Each resonance showed the Q values on the order of 160–300, a reasonable value to observe the modification of the total spontaneous emission rate in this kind of photonic dots. © 1999 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Optical gain and stimulated emission of cleaved cubic gallium nitrite

J. Holst, A. Hoffmann, I. Broser, B. Schöttker, D. J. As, D. Schikora, and K. Lischka

Appl. Phys. Lett. 74, 1966 (1999); http://dx.doi.org/10.1063/1.123715 (3 pages) | Cited 7 times

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In this letter, we report on the observation of optically excited stimulated emission of c-GaN layers grown by molecular-beam epitaxy (MBE). Stimulated emission was observed at 1.8 K and room temperature. The threshold intensity for excitation of stimulated emission from our MBE-grown c-GaN layers is significantly lower than that reported for c-GaN grown by metalorganic chemical vapor deposition (MOCVD). The experimental data of optical gain and stimulated emission presented in this letter demonstrate that this material has a good potential for the future realization of cleaved cavity blue light-emitting laser diodes. © 1999 American Institute of Physics.  
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
78.40.Fy Semiconductors
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Measurement of the electron energy distribution function in an argon radio-frequency discharge in the γ mode

C. M. Deegan, J. P. Goss, D. Vender, and M. B. Hopkins

Appl. Phys. Lett. 74, 1969 (1999); http://dx.doi.org/10.1063/1.123716 (3 pages) | Cited 7 times

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The α–γ transition in an argon radio-frequency discharge has been measured using Langmuir probes and a current–voltage monitor. At two pressures, bi-Maxwellian electron energy distribution functions were measured in the γ mode. Increasing the gas pressure results in a decrease in the high-energy component of the electron energy distribution function. A transition region in the current–voltage characteristic is also observed. © 1999 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.70.Ds Electric and magnetic measurements

Role of peripheral vacuum regions in the control of the electron cyclotron resonance plasma uniformity

Yoko Ueda, Hiroshi Muta, and Yoshinobu Kawai

Appl. Phys. Lett. 74, 1972 (1999); http://dx.doi.org/10.1063/1.123717 (3 pages) | Cited 10 times

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Spatial measurements of the ion saturation current density indicate stable vacuum regions in a periphery of electron cyclotron resonance (ECR) plasma. The vacuum regions have a possibility to contribute to plasma uniformity by behaving as a waveguide for the incident electromagnetic waves. Mode conversion of electromagnetic waves with long wavelength to the right circular polarized wave was observed experimentally at a certain radial position. Furthermore, microwave propagation in a partially filled plasma chamber was examined numerically. The simulation indicated that the electromagnetic waves with long wavelengths propagated in a periphery of the plasma were converted into the extraordinary wave or electrostatic waves outside the ECR region and that the power absorption took place at the local regions. Physical considerations toward these results imply the reason why the plasma uniformity is influenced by magnetic field gradient. © 1999 American Institute of Physics.
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52.80.Pi High-frequency and RF discharges
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.40.Fd Plasma interactions with antennas; plasma-filled waveguides
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Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1−xCdxTe:As

J. W. Garland, C. H. Grein, B. Yang, P. S. Wijewarnasuriya, F. Aqariden, and S. Sivananthan

Appl. Phys. Lett. 74, 1975 (1999); http://dx.doi.org/10.1063/1.123718 (3 pages) | Cited 12 times

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Molecular arsenic, As4, is commonly used as the source for in situ p-type doping of Hg1−xCdxTe grown by molecular beam epitaxy. As incorporated, the arsenic is strongly self-compensated, requiring annealing for its p-type electrical activation. Here, a quasithermodynamic model is used to interpret the dependence of the arsenic concentration, cAs, as measured by secondary ion mass spectroscopy, on the incident As4 and Hg fluxes during growth. The results strongly suggest that the As4 is absorbed in its molecular form rather than being dissociated on the growth surface, as has previously been assumed. This clearly is relevant to the self-compensation of the arsenic in as-grown Hg1−xCdxTe. © 1999 American Institute of Physics.
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81.05.Dz II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors

External quantum efficiency of single porous silicon nanoparticles

G. M. Credo, M. D. Mason, and S. K. Buratto

Appl. Phys. Lett. 74, 1978 (1999); http://dx.doi.org/10.1063/1.123719 (3 pages) | Cited 37 times

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We use a combination of single nanoparticle luminescence and scanning force microscopy to determine the quantum efficiency (QE) of single porous Si nanoparticles and to determine the ratio of luminescent nanoparticles deposited on a silica surface to the total nanoparticles. An estimate of the QE of bulk porous Si based on these data compares favorably to the QE measured experimentally. From this we conclude that the 1% QE of bulk porous Si measured experimentally results primarily from a statistical distribution of high QE quantum-confined Si chromophores. © 1999 American Institute of Physics.
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78.55.Mb Porous materials
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
61.46.-w Structure of nanoscale materials

Stress effects in the oxidation of planar silicon substrates

A. Mihalyi, R. J. Jaccodine, and T. J. Delph

Appl. Phys. Lett. 74, 1981 (1999); http://dx.doi.org/10.1063/1.123720 (3 pages) | Cited 13 times

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We report here on the results of a series of experiments in which constant, controlled levels of in-plane stress were applied to oxidizing silicon substrates. The results indicate that compressive stresses tend to retard the growth of the oxide layer, while tensile stresses have an uncertain effect. These results are at variance with the predictions of a widely held model for the effect of stress upon the oxidation of silicon. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Cy Elemental semiconductors
68.60.Bs Mechanical and acoustical properties

Enhanced optical emission from GaN films grown on a silicon substrate

Xiong Zhang, Soo-Jin Chua, Peng Li, Kok-Boon Chong, and Zhe-Chuan Feng

Appl. Phys. Lett. 74, 1984 (1999); http://dx.doi.org/10.1063/1.123721 (3 pages) | Cited 18 times

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GaN films have been grown on a silicon-(001) substrate with specially designed composite intermediate layers consisting of an ultrathin amorphous silicon layer and a GaN/AlxGa1−xN (x = 0.2) multilayered buffer by metal-organic chemical vapor deposition and characterized by photoluminescence and x-ray diffraction spectroscopy. It was found that the GaN films grown on the composite intermediate layers gave comparable or slightly stronger optical emission than those grown on a sapphire substrate under an identical reactor configuration. Moreover, the full-width at half-maximum for the GaN band-edge-related emission is 40 meV at room temperature. This fact indicates that by using the proposed composite intermediate layers, the crystalline quality of GaN-based nitride grown on a silicon substrate can be significantly improved. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations

L. B. Freund, J. A. Floro, and E. Chason

Appl. Phys. Lett. 74, 1987 (1999); http://dx.doi.org/10.1063/1.123722 (3 pages) | Cited 93 times

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Two main assumptions which underlie the Stoney formula relating substrate curvature to mismatch strain in a bonded thin film are that the film is very thin compared to the substrate, and the deformations are infinitesimally small. Expressions for the curvature–strain relationship are derived for cases in which these assumptions are relaxed, thereby providing a basis for interpretation of experimental observations for a broader class of film–substrate configurations. © 1999 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.20.F- Deformation and plasticity

Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester

Appl. Phys. Lett. 74, 1990 (1999); http://dx.doi.org/10.1063/1.123723 (3 pages) | Cited 4 times

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In this work, we demonstrate theoretically that the piezoelectric effect can be used to achieve confinement over quantum distances in systems grown on [001] GaAs substrates. Such an effect can be achieved by making use of elastic relaxation of micromachined strained structures. At the free corners of the overhanging beams, shear deformations appear which induce a three-dimensional V-shape potential. Calculations show the creation of quantum dots near the corners of the overhanging beams. © 1999 American Institute of Physics.
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77.65.Ly Strain-induced piezoelectric fields
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
07.10.Cm Micromechanical devices and systems
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Nonlinear optical absorption and temporal response of arsenic- and oxygen-implanted GaAs

M. J. Lederer, B. Luther-Davies, H. H. Tan, C. Jagadish, M. Haiml, U. Siegner, and U. Keller

Appl. Phys. Lett. 74, 1993 (1999); http://dx.doi.org/10.1063/1.123724 (3 pages) | Cited 16 times

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We have measured the nonlinear optical absorption of arsenic and oxygen implanted epitaxial GaAs for a range of ion doses and annealing temperatures. The response time, τA, and a parameter, Mmax, which characterizes the performance of the structures as modulators, are both reduced by implantation, and correspondingly the nonbleachable losses are increased. We show that similar combinations of (τA, Mmax) can be achieved using either ion species and various combinations of dose and annealing temperatures. Furthermore, the data were all located on a well-defined curve in the (τA, Mmax) plane, provided amorphization, which occurs at high implant doses, was avoided. We deduce that there exists a limit to the modulation if a specific response time is required. © 1999 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.66.Fd III-V semiconductors
42.70.Mp Nonlinear optical crystals
78.47.-p Spectroscopy of solid state dynamics
81.40.Gh Other heat and thermomechanical treatments
81.40.Tv Optical and dielectric properties related to treatment conditions
61.72.uj III-V and II-VI semiconductors

Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors

Wen-Chau Liu, Wen-Lung Chang, Hsi-Jen Pan, Kuo-Hui Yu, Shung-Ching Feng, and Wen-Shiung Lour

Appl. Phys. Lett. 74, 1996 (1999); http://dx.doi.org/10.1063/1.123725 (3 pages) | Cited 3 times

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A new high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic heterostructure field-effect transistor, based on a novel airbridge-gate structure with multiple piers, has been fabricated successfully. Due to the employment of high Schottky barrier GaInP layer and the newly designed double delta-doped sheets (D3S) InGaAs channel, the high gate-to-drain breakdown voltage and broad and linear transconductance are obtained simultaneously. Moreover, the use of airbridge-gate technique not only suppresses the parasitic capacitance, but also exhibits a wide and flat operation regime of the current gain cutoff frequency fT and maximum oscillation frequency fmax. © 1999 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Ey III-V semiconductors

DX centers in GaAs/Si-δ/AlAs heterostructure

R. H. Miwa and T. M. Schmidt

Appl. Phys. Lett. 74, 1999 (1999); http://dx.doi.org/10.1063/1.123726 (3 pages) | Cited 8 times

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Microscopic mechanisms of impurity spreading in GaAs/Si-δ/AlAs heterostructure have been investigated using an ab initio pseudopotential total energy calculation. Our results showed that silicon atoms can move from the δ-doped plane occupying interstitial positions, favored by the high doped concentration, forming DX centers. The silicon impurity position, out of the δ plane in the AlAs layers, presents an energetically stable configuration, and in the GaAs layers, presents a metastable configuration. As a consequence a silicon doping limit is reached due to the presence of localized deep states inside the band gap, when silicon atoms are in interstitial positions. © 1999 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.15.Nc Total energy and cohesive energy calculations
71.15.Dx Computational methodology (Brillouin zone sampling, iterative diagonalization, pseudopotential construction)
73.61.Ey III-V semiconductors
61.72.J- Point defects and defect clusters

Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Fabio Della Sala, Aldo Di Carlo, Paolo Lugli, Fabio Bernardini, Vincenzo Fiorentini, Reinhard Scholz, and Jean-Marc Jancu

Appl. Phys. Lett. 74, 2002 (1999); http://dx.doi.org/10.1063/1.123727 (3 pages) | Cited 129 times

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The free-carrier screening of macroscopic polarization fields in wurtzite GaN/InGaN quantum well lasers is investigated via a self-consistent tight-binding approach. We show that the high carrier concentrations found experimentally in nitride laser structures effectively screen the built-in spontaneous and piezoelectric polarization fields, thus inducing a “field-free” band profile. Our results explain some heretofore puzzling experimental data on nitride lasers, such as the unusually high lasing excitation thresholds and emission blue shifts for increasing excitation levels. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
73.20.At Surface states, band structure, electron density of states
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
31.15.xr Self-consistent-field methods

Bonding constraints and defect formation at interfaces between crystalline silicon and advanced single layer and composite gate dielectrics

G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Phillips

Appl. Phys. Lett. 74, 2005 (1999); http://dx.doi.org/10.1063/1.123728 (3 pages) | Cited 76 times

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An increasingly important issue in semiconductor device physics is understanding of how departures from ideal bonding at silicon–dielectric interfaces generate electrically active defects that limit performance and reliability. Building on previously established criteria for formation of low defect density glasses, constraint theory is extended to crystalline silicon–dielectric interfaces that go beyond Si–SiO2 through development of a model that quantifies average bonding coordination at these interfaces. This extension is validated by application to interfaces between Si and stacked silicon oxide/nitride dielectrics demonstrating that as in bulk glasses and thin films, an average coordination, Nav, greater than three yields increasing defective interfaces. © 1999 American Institute of Physics.
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68.35.Ct Interface structure and roughness
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
61.50.Lt Crystal binding; cohesive energy
61.72.-y Defects and impurities in crystals; microstructure
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