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5 Apr 1999

Volume 74, Issue 14, pp. 1933-2093

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An in-plane GaAs single-electron memory cell operating at 77 K

K.-H. Yoo, J. W. Park, Jinhee Kim, K. S. Park, S. C. Oh, J.-O. Lee, J. J. Kim, J. B. Choi, and J. J. Lee

Appl. Phys. Lett. 74, 2073 (1999); http://dx.doi.org/10.1063/1.123761 (3 pages) | Cited 2 times

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An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source–drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage. © 1999 American Institute of Physics.
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85.35.Ds Quantum interference devices
85.35.Gv Single electron devices
73.61.Ey III-V semiconductors

Strained Si n-channel metal–oxide–semiconductor transistor on relaxed Si1−xGex formed by ion implantation of Ge

S. John, S. K. Ray, E. Quinones, and S. K. Banerjee

Appl. Phys. Lett. 74, 2076 (1999); http://dx.doi.org/10.1063/1.123762 (3 pages) | Cited 5 times

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Ge implantation followed by high-temperature solid phase epitaxy was used to form a relaxed substrate, eliminating need for the growth of relaxed Si1−xGex layers. Upon this film, a 2000 Å buffer layer of Si0.85Ge0.15 followed by a 200 Å strained Si layer was grown by ultrahigh-vacuum chemical vapor deposition. For comparison, unstrained Si epitaxial films and a 2000 Å thick film of Si0.85Ge0.15 (on unimplanted Si) followed by 200 Å of Si were used. n-channel metal–oxide–semiconductor transistors were fabricated and their dc characteristics were examined. Strained Si devices show a 17.5% higher peak linear μFE than control devices as a result of higher electron mobility in the strained Si channel. This work demonstrates a simple method for the formation of strained Si layers. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
81.05.Cy Elemental semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
85.40.Sz Deposition technology
73.61.Cw Elemental semiconductors
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Dn Low-field transport and mobility; piezoresistance
68.60.Bs Mechanical and acoustical properties

A wideband electronically tunable microwave notch filter in yttrium iron garnet–gallium arsenide material structure

Chen S. Tsai and Jun Su

Appl. Phys. Lett. 74, 2079 (1999); http://dx.doi.org/10.1063/1.123763 (2 pages) | Cited 18 times

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A wideband electronically tunable microwave notch (band-stop) filter has been constructed in an yttrium iron garnet (YIG)/gallium arsenide (GaAs) material structure. An incident microwave propagating along the microstrip transmission line in the GaAs substrate is coupled into and to excite the magnetostatic surface waves in the YIG layer, which is laid upon the microstrip transmission line. Maximum coupling and thus the peak absorption of the output microwave power occur at the ferromagnetic resonance frequency in the YIG film as determined by a bias magnetic field. A tuning range as large as 2.5–23.0 GHz in the peak absorption frequency with the corresponding magnetic field tuning range of 290–7300 Oe has been accomplished. Peak absorption of 15–38 dB in the microwave output power has also been measured. © 1999 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
84.40.Dc Microwave circuits
84.30.Vn Filters
85.70.Ge Ferrite and garnet devices
75.50.Gg Ferrimagnetics
73.61.Ey III-V semiconductors
75.30.Ds Spin waves
75.70.Rf Surface magnetism

Polymer solution light-emitting devices

Shun-Chi Chang, Yang Yang, and Qibing Pei

Appl. Phys. Lett. 74, 2081 (1999); http://dx.doi.org/10.1063/1.123764 (3 pages) | Cited 13 times

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Traditional conjugated polymer electroluminescent devices are thin-film solid-state devices consisting of a thin polymer film sandwiched between two electrodes. In this letter, we demonstrate the generation of luminescence from polymer solutions in a compact polymer solution configuration. This unique polymer solution light-emitting device (SLED) consists of a thin layer of a polymer solution sandwiched between two transparent indium–tin–oxide/glass substrates. When biased, the device turns on at slightly above the band-gap energy and emits bright luminescence. The emission spectrum is consistent with the photoluminescence spectrum obtained from the polymer solution. We suggest that the mechanism of the SLED is due to the electrogenerated chemiluminescence effect. The SLED combines the advantages of low operating voltage, and easy and low-cost fabrication. The SLED is also a highly transparent emissive device when transparent materials are used for the electrodes and the substrates. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.60.Ps Chemiluminescence
78.55.Bq Liquids
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