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5 Apr 1999

Volume 74, Issue 14, pp. 1933-2093

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Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters

C. Q. Xu, K. Fujita, Y. Ogawa, and T. Kamijoh

Appl. Phys. Lett. 74, 1933 (1999); http://dx.doi.org/10.1063/1.123732 (3 pages) | Cited 6 times

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Temperature and polarization characteristics of 1.55-μm-band LiNbO3 quasiphase-matched (QPM) wavelength converters have been studied by second-harmonic generation (SHG). It is found that the shift of the QPM wavelength is linearly proportional to temperature over the measured temperature range between 10 and 40 °C, with a temperature tolerance (corresponding to a 3 dB reduction in the QPM conversion efficiency) of greater than 10 °C for a 10-mm-long device. With respect to the angle θ of the injected fundamental light polarization direction, the SHG power changes as a function of sin4 θ, with a tolerance of over 60°. Theoretical explanations for the observed results are also presented. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates

Large Schottky barriers for Ni/p-GaN contacts

Kenji Shiojima, Tomoya Sugahara, and Shiro Sakai

Appl. Phys. Lett. 74, 1936 (1999); http://dx.doi.org/10.1063/1.123733 (3 pages) | Cited 22 times

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Large Schottky barriers were measured for Ni contacts formed on low Mg-doped p-GaN. In order to improve leaky Schottky characteristics, low-Mg doping was examined. This provided atomically flat surfaces and a low dislocation density of 5.5×108 cm−2. The Schottky barrier height (qϕB) as high as 2.4±0.2 eV and n values of 1.84±0.06 were obtained from current–voltage measurements. These results are in good agreement with the prediction that the sum of qϕB of n and p types adds up to the band gap. In the capacitance–voltage measurements, a transient response of capacitance was observed. This indicates that the evaluation of deep levels close to the valence band is possible, which could result in improvement of p-GaN growth. © 1999 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.61.Ey III-V semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species
68.35.Ct Interface structure and roughness

Interference effects in bilayer organic light-emitting diodes

S. K. So, W. K. Choi, L. M. Leung, and K. Neyts

Appl. Phys. Lett. 74, 1939 (1999); http://dx.doi.org/10.1063/1.123734 (3 pages) | Cited 48 times

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The electroluminescent spectra and the light intensities of Alq3-based organic light-emitting diodes were measured as a function of the thickness of the light-emitting layer. A maximum in the light intensity occurs when the thickness of this layer is approximately 600 Å, whereas a minimum in the light intensity occurs at about 1400 Å. The electroluminescent spectra were also found to vary strongly with the thickness of the light-emitting layer. Computer simulation, based on wide-angle interference of light-emitting dipoles from a reflective mirror, can account for the experimental observations. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
78.66.-w Optical properties of specific thin films
78.60.Fi Electroluminescence

Near-field second harmonic imaging of lead zirconate titanate piezoceramic

Igor I. Smolyaninov, Chi H. Lee, and Christopher C. Davis

Appl. Phys. Lett. 74, 1942 (1999); http://dx.doi.org/10.1063/1.123735 (3 pages) | Cited 14 times

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A technique to characterize the local nonlinearity of lead zirconate titanate piezoceramic (PZT) has been developed. Near-field optical microscopy has been used to image variations in local optical second harmonic generation from the PZT surface. Individual crystalline grains and grain boundaries are the main features visible in the images. The technique allows us to determine the local poling direction of individual submicrometer size crystalline grains of ceramic by near-field second harmonic imaging at different angles of incidence and polarization states of fundamental excitation light. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
61.72.Mm Grain and twin boundaries
42.79.Nv Optical frequency converters
77.22.Ej Polarization and depolarization

Resonant second harmonic generation in ZnSe bulk microcavity

Vittorio Pellegrini, Raffaele Colombelli, Iacopo Carusotto, Fabio Beltram, Silvia Rubini, Roberta Lantier, Alfonso Franciosi, Claudio Vinegoni, and Lorenzo Pavesi

Appl. Phys. Lett. 74, 1945 (1999); http://dx.doi.org/10.1063/1.123736 (3 pages) | Cited 18 times

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Room-temperature resonant second harmonic generation is demonstrated in a ZnSe bulk microcavity with Si3N4/SiO2 Bragg reflectors. The resonance occurs at the second harmonic wavelength in the blue-green spectral region and yields an enhancement of one order of magnitude in the second harmonic process. Tunability of the resonant effect between 480 and 500 nm is achieved by varying the angle of incidence. © 1999 American Institute of Physics.
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78.66.Hf II-VI semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Laser-induced selective area band-gap tuning in Si/Si1−xGex microstructures

J. J. Dubowski, N. Rowell, G. C. Aers, H. Lafontaine, and D. C. Houghton

Appl. Phys. Lett. 74, 1948 (1999); http://dx.doi.org/10.1063/1.123737 (3 pages) | Cited 6 times

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A one-step process is reported for selective area band-gap tuning of as-grown quantum well (QW) material consisting of Si/Si1−xGex microstructures. The process takes advantage of the ability of increasing the local temperature of the wafer, in excess of 900 °C, by applying the beam of a high-power cw Nd:YAG laser, which leads to controlled intermixing between the quantum well and barrier material. A microstructure with the band-gap blueshifted by 142 meV has been fabricated from as-grown 980 meV band-gap material. The results indicate that this approach has the potential for “writing” of Si/Si1−xGex QW microstructures with the selectively tuned band gap required in the fabrication of optoelectronic integrated circuits. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Li Other semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.35.Fx Diffusion; interface formation
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.82.Fk Semiconductors
61.72.Cc Kinetics of defect formation and annealing

Light-emitting diodes and laser diodes based on a Ga1−xInxAs/GaAs1−ySby type II superlattice on InP substrate

M. Peter, R. Kiefer, F. Fuchs, N. Herres, K. Winkler, K.-H. Bachem, and J. Wagner

Appl. Phys. Lett. 74, 1951 (1999); http://dx.doi.org/10.1063/1.123738 (3 pages) | Cited 16 times

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We report on the fabrication and characterization of light-emitting diodes (LEDs) and laser diodes with a staggered type II Ga1−xInxAs/GaAs1−ySby superlattice (SL) as the active region. SLs were grown strain compensated on the InP substrate using metalorganic chemical vapor deposition. The LEDs show room-temperature electroluminescence up to 2.14 μm, the index-guided diode lasers displayed cw laser emission at 1.71 μm up to 300 K. The spontaneous emission spectrum was found to show a significant blueshift with increasing injection current density, resulting in shorter laser emission wavelengths for the diode laser than for the LED. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Jb Light-emitting devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors

Diode-pumped self-frequency doubling in a Nd3+:YCa4O(BO3)3 laser

J. M. Eichenholz, D. A. Hammons, L. Shah, Q. Ye, R. E. Peale, M. Richardson, and B. H. T. Chai

Appl. Phys. Lett. 74, 1954 (1999); http://dx.doi.org/10.1063/1.123739 (3 pages) | Cited 34 times

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We report efficient, diode-pumped, self-frequency doubling (SFD) in the newly developed laser crystal Nd3+:YCa4O(BO3)3. More than 350 mW of fundamental output power at 1060 nm was achieved with a slope efficiency of 51%. With one watt of absorbed pump power, 62 mW of green cw laser emission at 530 nm was observed with proper phase matching. This initial performance, and the good optical properties of the crystalline host, are encouraging for the development of a high power diode-pumped SFD visible light laser source. © 1999 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.70.Hj Laser materials
42.79.Nv Optical frequency converters

Influence of p-type doping on the degradation of ZnSe laser diodes

D. Albert, J. Nürnberger, V. Hock, M. Ehinger, W. Faschinger, and G. Landwehr

Appl. Phys. Lett. 74, 1957 (1999); http://dx.doi.org/10.1063/1.123740 (3 pages) | Cited 29 times

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We present results of optical degradation experiments on blue-green ZnSe-based diode laser structures. A micro-focused wavelength selectable laser is used for degradation and the luminescence from the degrading region is simultaneously recorded. The degradation speed at a given optical power density depends strongly on the doping of the structure and on the photon energy: undoped structures do not degrade, while the threshold photon energy to induce degradation depends on the degree of compensation in the p-doped layers. However, at high photon energies, an improvement in compensation does not slow down the degradation process, leading to the suggestion that the nitrogen acceptor itself is unstable under these conditions. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.05.Dz II-VI semiconductors
71.55.Gs II-VI semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
61.66.Fn Inorganic compounds
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.60.Fi Electroluminescence
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

A model of radiative recombination in n-type porous silicon–aluminum Schottky junction

M. Balucani, V. Bondarenko, L. Franchina, G. Lamedica, V. A. Yakovtseva, and A. Ferrari

Appl. Phys. Lett. 74, 1960 (1999); http://dx.doi.org/10.1063/1.123741 (3 pages) | Cited 4 times

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It is common knowledge that silicon emits visible light in its breakdown condition, but it is also known to have low efficiency. In this letter, we report an in-depth analysis of data for light emitting devices based on porous silicon. A theoretical model of luminescence from reverse biased p-n junction has been developed for this n-type porous silicon–aluminium Schottky junction to explain the higher efficiency of these electroluminescence devices in comparison with that from a reverse biased p-n junction structure. Through this model, it is possible to understand the steps that are necessary to improve the efficiency of porous-aluminum Schottky junction. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
73.40.Ns Metal-nonmetal contacts
78.60.Fi Electroluminescence
78.66.Bz Metals and metallic alloys
73.30.+y Surface double layers, Schottky barriers, and work functions

Semiconductor photonic dots: Visible wavelength-sized optical resonators

I. Suemune, A. Ueta, A. Avramescu, S. Tanaka, H. Kumano, and K. Uesugi

Appl. Phys. Lett. 74, 1963 (1999); http://dx.doi.org/10.1063/1.123714 (3 pages) | Cited 7 times

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Here we describe a strategy toward constructing semiconductor photonic dots in the ultraviolet to blue region. An array of ZnS dots was grown on a GaAs substrate with a selective growth method. The ZnS dots have a pyramidal structure with the base plane of 800 nm square and the height of 300 nm. The {034} crystallographic planes form the sidewalls of the pyramids. Therefore, the size of the pyramidal dots is uniquely determined by the mask patterning. The optical reflection spectra showed clear resonance peaks which are reasonably assigned by the calculation of the resonance modes. Each resonance showed the Q values on the order of 160–300, a reasonable value to observe the modification of the total spontaneous emission rate in this kind of photonic dots. © 1999 American Institute of Physics.
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78.66.Hf II-VI semiconductors
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Optical gain and stimulated emission of cleaved cubic gallium nitrite

J. Holst, A. Hoffmann, I. Broser, B. Schöttker, D. J. As, D. Schikora, and K. Lischka

Appl. Phys. Lett. 74, 1966 (1999); http://dx.doi.org/10.1063/1.123715 (3 pages) | Cited 7 times

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In this letter, we report on the observation of optically excited stimulated emission of c-GaN layers grown by molecular-beam epitaxy (MBE). Stimulated emission was observed at 1.8 K and room temperature. The threshold intensity for excitation of stimulated emission from our MBE-grown c-GaN layers is significantly lower than that reported for c-GaN grown by metalorganic chemical vapor deposition (MOCVD). The experimental data of optical gain and stimulated emission presented in this letter demonstrate that this material has a good potential for the future realization of cleaved cavity blue light-emitting laser diodes. © 1999 American Institute of Physics.  
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.45.+h Stimulated emission
78.40.Fy Semiconductors
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