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5 Apr 1999

Volume 74, Issue 14, pp. 1933-2093

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Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1−xCdxTe:As

J. W. Garland, C. H. Grein, B. Yang, P. S. Wijewarnasuriya, F. Aqariden, and S. Sivananthan

Appl. Phys. Lett. 74, 1975 (1999); http://dx.doi.org/10.1063/1.123718 (3 pages) | Cited 12 times

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Molecular arsenic, As4, is commonly used as the source for in situ p-type doping of Hg1−xCdxTe grown by molecular beam epitaxy. As incorporated, the arsenic is strongly self-compensated, requiring annealing for its p-type electrical activation. Here, a quasithermodynamic model is used to interpret the dependence of the arsenic concentration, cAs, as measured by secondary ion mass spectroscopy, on the incident As4 and Hg fluxes during growth. The results strongly suggest that the As4 is absorbed in its molecular form rather than being dissociated on the growth surface, as has previously been assumed. This clearly is relevant to the self-compensation of the arsenic in as-grown Hg1−xCdxTe. © 1999 American Institute of Physics.
Show PACS
81.05.Dz II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.uj III-V and II-VI semiconductors

External quantum efficiency of single porous silicon nanoparticles

G. M. Credo, M. D. Mason, and S. K. Buratto

Appl. Phys. Lett. 74, 1978 (1999); http://dx.doi.org/10.1063/1.123719 (3 pages) | Cited 37 times

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We use a combination of single nanoparticle luminescence and scanning force microscopy to determine the quantum efficiency (QE) of single porous Si nanoparticles and to determine the ratio of luminescent nanoparticles deposited on a silica surface to the total nanoparticles. An estimate of the QE of bulk porous Si based on these data compares favorably to the QE measured experimentally. From this we conclude that the 1% QE of bulk porous Si measured experimentally results primarily from a statistical distribution of high QE quantum-confined Si chromophores. © 1999 American Institute of Physics.
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78.55.Mb Porous materials
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
61.46.-w Structure of nanoscale materials

Stress effects in the oxidation of planar silicon substrates

A. Mihalyi, R. J. Jaccodine, and T. J. Delph

Appl. Phys. Lett. 74, 1981 (1999); http://dx.doi.org/10.1063/1.123720 (3 pages) | Cited 13 times

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We report here on the results of a series of experiments in which constant, controlled levels of in-plane stress were applied to oxidizing silicon substrates. The results indicate that compressive stresses tend to retard the growth of the oxide layer, while tensile stresses have an uncertain effect. These results are at variance with the predictions of a widely held model for the effect of stress upon the oxidation of silicon. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Cy Elemental semiconductors
68.60.Bs Mechanical and acoustical properties

Enhanced optical emission from GaN films grown on a silicon substrate

Xiong Zhang, Soo-Jin Chua, Peng Li, Kok-Boon Chong, and Zhe-Chuan Feng

Appl. Phys. Lett. 74, 1984 (1999); http://dx.doi.org/10.1063/1.123721 (3 pages) | Cited 18 times

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GaN films have been grown on a silicon-(001) substrate with specially designed composite intermediate layers consisting of an ultrathin amorphous silicon layer and a GaN/AlxGa1−xN (x = 0.2) multilayered buffer by metal-organic chemical vapor deposition and characterized by photoluminescence and x-ray diffraction spectroscopy. It was found that the GaN films grown on the composite intermediate layers gave comparable or slightly stronger optical emission than those grown on a sapphire substrate under an identical reactor configuration. Moreover, the full-width at half-maximum for the GaN band-edge-related emission is 40 meV at room temperature. This fact indicates that by using the proposed composite intermediate layers, the crystalline quality of GaN-based nitride grown on a silicon substrate can be significantly improved. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations

L. B. Freund, J. A. Floro, and E. Chason

Appl. Phys. Lett. 74, 1987 (1999); http://dx.doi.org/10.1063/1.123722 (3 pages) | Cited 93 times

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Two main assumptions which underlie the Stoney formula relating substrate curvature to mismatch strain in a bonded thin film are that the film is very thin compared to the substrate, and the deformations are infinitesimally small. Expressions for the curvature–strain relationship are derived for cases in which these assumptions are relaxed, thereby providing a basis for interpretation of experimental observations for a broader class of film–substrate configurations. © 1999 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
46.80.+j Measurement methods and techniques in continuum mechanics of solids
62.20.F- Deformation and plasticity

Piezoelectrically induced electronic confinement obtained by three-dimensional elastic relaxation in III–V semiconducting overhanging beams

G. Fierling, X. Letartre, P. Viktorovitch, J. P. Lainé, and C. Priester

Appl. Phys. Lett. 74, 1990 (1999); http://dx.doi.org/10.1063/1.123723 (3 pages) | Cited 4 times

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In this work, we demonstrate theoretically that the piezoelectric effect can be used to achieve confinement over quantum distances in systems grown on [001] GaAs substrates. Such an effect can be achieved by making use of elastic relaxation of micromachined strained structures. At the free corners of the overhanging beams, shear deformations appear which induce a three-dimensional V-shape potential. Calculations show the creation of quantum dots near the corners of the overhanging beams. © 1999 American Institute of Physics.
Show PACS
77.65.Ly Strain-induced piezoelectric fields
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
07.10.Cm Micromechanical devices and systems
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