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12 Apr 1999

Volume 74, Issue 15, pp. 2105-2241

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Four-wave mixing of strong picosecond optical pulses in passive semiconductor waveguides

J. M. Tang and K. A. Shore

Appl. Phys. Lett. 74, 2105 (1999); http://dx.doi.org/10.1063/1.123770 (3 pages) | Cited 6 times

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Four-wave mixing (FWM) of strong picosecond optical pulses in passive semiconductor waveguides is investigated numerically, taking into account two-photon absorption (TPA), ultrafast nonlinear refraction, probe depletion, and cross-gain modulation, as well as interband and intraband carrier processes. Simulations show good agreement with published experimental measurements, and indicate that interband and intraband nonlinear mixing and TPA-induced pulse reshaping play significant roles in determining conjugate pulse behaviors for strong pulse energy cases. In particular, for increased pulse energy, an increase in FWM conversion efficiency is predicted, and an optimum pulse width is identified. © 1999 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Wi Nonlinear waveguides
42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays

SiGe/Si Mach–Zehnder interferometer modulator based on the plasma dispersion effect

Baojun Li, Zuimin Jiang, Xiangjiu Zhang, Xun Wang, Jianjun Wan, Guozheng Li, and Enke Liu

Appl. Phys. Lett. 74, 2108 (1999); http://dx.doi.org/10.1063/1.123771 (2 pages) | Cited 5 times

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A SiGe Mach–Zehnder interferometer modulator based on the plasma dispersion effect has been fabricated. A maximum modulation depth of 86% and a switching current of 40 mA with a π-phase-shift voltage of 0.9 V have been achieved at 1.3 μm wavelength. The device has a measured insertion loss of 2.5 dB and a response time of 238 ns. © 1999 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.82.Et Waveguides, couplers, and arrays
07.60.Ly Interferometers
42.86.+b Optical workshop techniques

Large photosensitivity in lead–silicate glasses

X.-C. Long and S. R. J. Brueck

Appl. Phys. Lett. 74, 2110 (1999); http://dx.doi.org/10.1063/1.123772 (3 pages) | Cited 11 times

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Strong, permanent surface-relief and refractive index gratings are written in lead–silicate glasses by irradiation with the output of a pulsed KrF excimer laser (248 nm) through a phase mask. Diffraction efficiencies as high as 10% are obtained. The diffraction efficiency of the refractive index grating after removal of the surface-relief grating shows that a very large photoinduced refractive index change (Δn0 = 0.09±0.02) is obtained. © 1999 American Institute of Physics.  
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42.79.Dj Gratings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Ce Glasses, quartz
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Time-domain dielectric constant measurement of thin film in GHz–THz frequency range near the Brewster angle

M. Li, G. C. Cho, T.-M. Lu, X.-C. Zhang, S.-Q. Wang, and J. T. Kennedy

Appl. Phys. Lett. 74, 2113 (1999); http://dx.doi.org/10.1063/1.123773 (3 pages) | Cited 12 times

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We present a free-space time-domain method to measure the dielectric property of thin film on substrate in the GHz–THz frequency range. The concept is based on the phase flip of the field wave form for near-Brewster angle reflection. Realizing this concept, we demonstrate the determination of the dielectric constant of a thin polymer film at a few micrometer thickness on the silicon wafer. © 1999 American Institute of Physics.
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77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.84.Jd Polymers; organic compounds
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Vacuum laser acceleration by an ultrashort, high-intensity laser pulse with a sharp rising edge

Ya Cheng and Zhizhan Xu

Appl. Phys. Lett. 74, 2116 (1999); http://dx.doi.org/10.1063/1.123774 (3 pages) | Cited 23 times

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A laser vacuum electron acceleration scheme is proposed in this letter. By the help of a one-dimensional model, we find that an ultrashort, high-intensity, plane-wave laser pulse with a sharp rising edge can be used to accelerate electrons to relativistic energy in vacuum. © 1999 American Institute of Physics.
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29.20.-c Accelerators
41.75.Jv Laser-driven acceleration
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
41.75.Lx Other advanced accelerator concepts
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In situ photoexpansion measurements of amorphous As2S3 films: Role of photocarriers

Ashtosh Ganjoo, Y. Ikeda, and K. Shimakawa

Appl. Phys. Lett. 74, 2119 (1999); http://dx.doi.org/10.1063/1.123775 (3 pages) | Cited 10 times

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To understand the dynamics of photoinduced volume expansion (PVE) in amorphous chalcogenides, in situ PVE (time evolution of thickness changes during illumination) measurements have been performed. Two distinct behaviors, transient and metastable PVE, have been observed. A strong correlation between the changes in thickness and photocurrent is reported. © 1999 American Institute of Physics.
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61.82.Fk Semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
68.55.-a Thin film structure and morphology
81.05.Gc Amorphous semiconductors
61.43.Fs Glasses
73.50.Pz Photoconduction and photovoltaic effects
61.43.Dq Amorphous semiconductors, metals, and alloys
73.61.Jc Amorphous semiconductors; glasses

Contact resistance of carbon nanotubes

J. Tersoff

Appl. Phys. Lett. 74, 2122 (1999); http://dx.doi.org/10.1063/1.123776 (3 pages) | Cited 65 times

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Electrical contacts to carbon nanotubes typically exhibit high resistance, posing a serious obstacle to their application in electronic devices. One important factor may be their unique electronic structure, which gives weak electronic coupling at the Fermi surface. This suggests some possible ways to reduce contact resistance. © 1999 American Institute of Physics.
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71.20.Tx Fullerenes and related materials; intercalation compounds
73.40.Cg Contact resistance, contact potential

Linear arrays of CaF2 nanostructures on Si

J. Viernow, D. Y. Petrovykh, F. K. Men, A. Kirakosian, J.-L. Lin, and F. J. Himpsel

Appl. Phys. Lett. 74, 2125 (1999); http://dx.doi.org/10.1063/1.123777 (3 pages) | Cited 37 times

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Linear arrays of CaF2 stripes and dots, about 7 nm wide, are fabricated by self-assembly on stepped Si(111). Stripes are grown on a CaF1 passivation layer, dots directly on Si. The stripes have a precision of ±1 nm, are continuous, do not touch each other, and are attached to the top of the step edges. The stripe repulsion and their counter-intuitive attachment are explained via a reversal of the stacking at the CaF2/Si(111) interface. The dot density is 3×1011 cm−2=2 Teradots/in.2. These arrays may serve as masks in nanolithography. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.65.Rv Passivation

Order–disorder transition in epitaxial ZnSnP2

G. A. Seryogin, S. A. Nikishin, H. Temkin, A. M. Mintairov, J. L. Merz, and M. Holtz

Appl. Phys. Lett. 74, 2128 (1999); http://dx.doi.org/10.1063/1.123778 (3 pages) | Cited 10 times

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We report on the growth of ZnSnP2 on GaAs(100) substrates by gas source molecular beam epitaxy. Samples were grown in the temperature range of 300–360 °C. A small change in the Sn/Zn flux ratio at constant substrate temperature was found to result in a transition from a lattice mismatched, Δa/a ∼ 0.4%–0.7%, disordered crystal structure to a lattice matched, ordered chalcopyrite structure. Infrared reflectance and Raman measurements were used to monitor this phase transition. Formation of the two different crystal modifications is discussed in terms of vapor–solid and vapor–liquid–solid growth modes. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
64.70.K- Solid-solid transitions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Hd Other semiconductors
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors

Fracture behavior of a nanocrystallized Zr65Cu15Al10Pd10 metallic glass

M. W. Chen, A. Inoue, C. Fan, A. Sakai, and T. Sakurai

Appl. Phys. Lett. 74, 2131 (1999); http://dx.doi.org/10.1063/1.123779 (3 pages) | Cited 13 times

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Fracture surfaces of a nanocrystallized Zr65Cu15Al10Pd10 metallic glass were observed on an atomic scale with field ion microscopy. Based on geometrical and phase characteristics of the fracture morphologies, it can be determined that a crack propagates along the interfaces between nanocrystals and the amorphous matrix in the alloy with optimized microstructures. Combining with macromechanical properties, it is proposed that the strengthening effect of nanocrystals in the Zr-based metallic glass arises from a strong interaction between nanocrystals and local shear bands during deformation processes of the glassy matrix. © 1999 American Institute of Physics.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.05.Kf Glasses (including metallic glasses)
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
62.20.M- Structural failure of materials
81.05.Bx Metals, semimetals, and alloys

Plume-induced stress in pulsed-laser deposited CeO2 films

D. P. Norton, C. Park, J. D. Budai, S. J. Pennycook, and C. Prouteau

Appl. Phys. Lett. 74, 2134 (1999); http://dx.doi.org/10.1063/1.123780 (3 pages) | Cited 13 times

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Residual compressive stress due to plume-induced energetic particle bombardment in CeO2 films deposited by pulsed-laser deposition is reported. For laser ablation film growth in low pressures, stresses as high as 2 GPa were observed as determined by substrate curvature and four-circle x-ray diffraction. The amount of stress in the films could be manipulated by controlling the kinetic energies of the ablated species in the plume through gas-phase collisions with an inert background gas. The film stress decreased to near zero for argon background pressures greater than 50 mTorr. At these higher background pressures, the formation of nanoparticles in the deposited film was observed. © 1999 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.60.Bs Mechanical and acoustical properties
61.46.-w Structure of nanoscale materials
62.20.-x Mechanical properties of solids

First-principles study of β-AlN thin films on β-SiC(001)

R. Di Felice, C. M. Bertoni, and A. Catellani

Appl. Phys. Lett. 74, 2137 (1999); http://dx.doi.org/10.1063/1.123814 (3 pages) | Cited 5 times

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We have investigated the initial stages of formation of cubic AlN films on SiC(001) by studying the energetics of possible structures. We have considered 1×1 and p(4×1) surface reconstructions for the films, and we have allowed for different interface arrangements including atomic mixing. The results of our first-principles calculations reveal that, in N-rich conditions, no two-dimensional film structure is stable. However, in Al-rich conditions, it is possible to stabilize a thick wetting layer of cubic AlN provided the proper interface mixing is achieved. The most stable AlN film exhibits a p(4×1) surface reconstruction. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Rh Phase transitions and critical phenomena
68.35.Fx Diffusion; interface formation
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.66.Fn Inorganic compounds

Formation of three-dimensional Si islands on Si(111) with a scanning tunneling microscope

Alexander A. Shklyaev, Motoshi Shibata, and Masakazu Ichikawa

Appl. Phys. Lett. 74, 2140 (1999); http://dx.doi.org/10.1063/1.123781 (3 pages) | Cited 10 times

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Silicon islands up to 10 nm in base length and 3 nm in height were grown on a Si(111) surface at room temperature with a scanning tunneling microscope at constant tunneling currents. The islands grew with constant rates at earlier growth stages by accumulating Si atoms from the surface area around the islands. The growth rate decreased when the island height exceeded 3 nm. At negative tip biases above 7 V, the technique produced a highly reproducible formation of the islands whose growth rate increased as the bias voltage increased. © 1999 American Institute of Physics.
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81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten

Akira Heya, Atsushi Masuda, and Hideki Matsumura

Appl. Phys. Lett. 74, 2143 (1999); http://dx.doi.org/10.1063/1.123782 (3 pages) | Cited 22 times

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A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the method, a-Si films are crystallized at temperatures lower than 400 °C by annealing in the presence of atomic hydrogen. The hydrogen atoms are generated by catalytic cracking reaction of H2 gas on a heated tungsten catalyzer in the catalytic chemical vapor deposition apparatus. It is found that the crystalline fraction of such an a-Si film is increased from 0% to several tens %, and at the same time the a-Si film itself is etched with the rate of several tens nm/min by annealing in atomic hydrogen. This increment of crystalline fraction appears dependent on the quality of initial a-Si films. It is implied that there are several types of a-Si even if the difference among a-Si films cannot be detected by Raman scattering spectroscopy and other means for measurements. © 1999 American Institute of Physics.  
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61.43.Dq Amorphous semiconductors, metals, and alloys
68.55.-a Thin film structure and morphology
78.66.Db Elemental semiconductors and insulators
64.70.K- Solid-solid transitions
78.66.Jg Amorphous semiconductors; glasses
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Doppler broadening positron annihilation spectroscopy: A technique for measuring open-volume defects in silsesquioxane spin-on glass films

Mihail P. Petkov, Marc H. Weber, Kelvin G. Lynn, Kenneth P. Rodbell, and Stephan A. Cohen

Appl. Phys. Lett. 74, 2146 (1999); http://dx.doi.org/10.1063/1.123815 (3 pages) | Cited 16 times

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Doppler broadening positron annihilation spectroscopy is used to measure the concentration, spatial distribution, and size of open-volume defects in low dielectric constant (low-k) hydrogen- and methyl-silsesquioxane thin films. A simple correlation between the number of open-volume defects and the dielectric constant is obtained. In addition, the depth-resolving capability enables profiling of the local electronic environment of open-volume defects as a function of depth. The potential for using this technique for measuring k as a function of film depth is also discussed. © 1999 American Institute of Physics.
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78.70.Bj Positron annihilation
77.55.-g Dielectric thin films
61.72.-y Defects and impurities in crystals; microstructure
71.55.Ht Other nonmetals
77.22.Ch Permittivity (dielectric function)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Rapid surface topography using a tapping mode atomic force microscope

Norio Ookubo and Seiji Yumoto

Appl. Phys. Lett. 74, 2149 (1999); http://dx.doi.org/10.1063/1.123783 (3 pages) | Cited 4 times

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In an atomic force microscope (AFM), it is possible to scan at high speeds without sacrificing resolution if the imaging is accomplished by combining the rapidly varying signal from the vibrating cantilever, which indicates the detailed surface features, with the more slowly varying feedback control signal to the piezotube. Scanning speed in this case is limited by the fundamental resonance of the cantilever—not, as in conventional AFM, by the feedback bandwidth—and about 10 s is required to image a surface area of 21 μm2 for 512×512 scanning points. © 1999 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.B- Structure of clean surfaces (and surface reconstruction)
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
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Quantitative analysis of the compositional profile of a single quantum well by grazing incidence x-ray reflectivity and photoluminescence

Youngboo Moon and Euijoon Yoon

Appl. Phys. Lett. 74, 2152 (1999); http://dx.doi.org/10.1063/1.123784 (3 pages)

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A quantitative analysis method, using grazing incidence x-ray reflectivity (GIXR) and photoluminescence (PL), was applied to obtain the As profile of an InAsxP1−x/InP single quantum well (SQW) formed by AsH3 exposure of an InP surface. The profile could be uniquely determined by simultaneously matching of GIXR and PL with the observed ones. It was found that the so-called effective thickness model was not appropriate for the description of the As compositional profile at the SQW interface. Moreover, it underestimated the amount of incorporated As at the interface. However, the Gaussian As profile proposed in this study resulted in a quite well-matched GIXR curve with quantitative information on the total As amount and the grading of As at the interface. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.Ea III-V semiconductors
68.35.Ct Interface structure and roughness
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors

Wen-Shiung Lour, Wen-Lung Chang, Wen-Chau Liu, Yung-Hsin Shie, Hsi-Jen Pan, Jing-Yuh Chen, and Wei-Chou Wang

Appl. Phys. Lett. 74, 2155 (1999); http://dx.doi.org/10.1063/1.123785 (3 pages) | Cited 14 times

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High-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic high electron-mobility transistors have been successfully fabricated and demonstrated in both direct-current and alternating-current performance. Together with a wide-gap Ga0.51In0.49P gate insulator, a gate-to-drain breakdown voltage of 33 V is further improved to over 40 V by selectively removing mesa sidewalls. The transconductance and current density of a 1×100 μm2 device at room temperature (77 K) are 90 (120) mS/mm and 646 (780) mA/mm, respectively. The measured fT and fmax are 12 and 28.4 GHz, respectively. These are consistent with 1 μm gate devices when the parasitic capacitance is reduced by selectively removing mesa sidewalls. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices

Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes

P. Raisch, R. Winterhoff, W. Wagner, M. Kessler, H. Schweizer, T. Riedl, R. Wirth, A. Hangleiter, and F. Scholz

Appl. Phys. Lett. 74, 2158 (1999); http://dx.doi.org/10.1063/1.123786 (3 pages) | Cited 10 times

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Al0.5In0.5P/Ga0.5In0.5P superlattice structures have been investigated as multiquantum barriers (MQB) in 630 nm band laser diodes in order to reduce thermal current losses. By inserting an optimized MQB, we have succeeded in improving both threshold currents and characteristic temperatures of such devices. However, the optimized dimensions of the MQB found experimentally deviated strongly from those predicted theoretically, indicating that the commonly used theoretical description assuming effective mass approximation, electron wave interference, and using transfer matrix calculation is not adequate. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates

R. Birkhahn, M. Garter, and A. J. Steckl

Appl. Phys. Lett. 74, 2161 (1999); http://dx.doi.org/10.1063/1.123787 (3 pages) | Cited 63 times

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Visible light emission has been obtained at room temperature by photoluminescence (PL) and electroluminescence (EL) from Pr-doped GaN thin films grown on Si(111). The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Pr) and a plasma gas source for N2. Photoexcitation with a He–Cd laser results in strong red emission at 648 and 650 nm, corresponding to the transition between 3P0 and 3F2 states in Pr3+. The full width at half maximum (FWHM) of the PL lines is ∼1.2 nm, which corresponds to ∼3.6 meV. Emission is also measured at near-infrared wavelengths, corresponding to lower energy transitions. Ar laser pumping at 488 nm also resulted in red emission, but with much lower intensity. Indium-tin-oxide Schottky contacts were used to demonstrate visible red EL from the GaN:Pr. The FWHM of the EL emission line is ∼7 nm. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence

Third harmonic generation by Bloch-oscillating electrons in a quasioptical array

Avik W. Ghosh, Michael C. Wanke, S. James Allen, and John W. Wilkins

Appl. Phys. Lett. 74, 2164 (1999); http://dx.doi.org/10.1063/1.123788 (3 pages) | Cited 13 times

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We compute the third harmonic field generated by Bloch-oscillating electrons in a quasioptical array of superlattices under THz irradiation. The third harmonic power transmitted oscillates with the internal electric field, with nodes associated with Bessel functions in eEd/ℏω. The nonlinear response of the array causes the output power to be a multivalued function of the incident laser power. The output can be optimized by adjusting the frequency of the incident pulse to match one of the Fabry-Pérot resonances in the substrate. Within the transmission-line model of the array, the maximum conversion efficiency is 0.1%. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Wc Optical coatings
78.66.-w Optical properties of specific thin films

Effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells

Ikai Lo, K. Y. Hsieh, S. L. Hwang, Li-Wei Tu, W. C. Mitchel, and A. W. Saxler

Appl. Phys. Lett. 74, 2167 (1999); http://dx.doi.org/10.1063/1.123789 (3 pages) | Cited 15 times

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The effect of threading dislocations on electron transport in In0.24Ga0.76N/GaN multiple quantum wells has been studied by using transmission electron microscopy (TEM) and van der Pauw Hall effect measurements. From the cross-sectional TEM imaging, we observed the threading dislocations which “screw” through the multiple In0.24Ga0.76N/GaN quantum well. From the Hall effect measurement, we found that the Hall mobility decreases as the temperature decreases (μ ∼ T3/2) due to the threading dislocation scattering, and the Hall carrier concentration shows a transition from conduction-band transport to localized-state-hopping transport. The thermal activation energy of the residual donor level (probably Si) is about 20.2 meV. © 1999 American Institute of Physics.
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73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
73.50.Bk General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Laser-assisted transfer of silicon by explosive hydrogen release

D. Toet, Michael O. Thompson, P. M. Smith, and T. W. Sigmon

Appl. Phys. Lett. 74, 2170 (1999); http://dx.doi.org/10.1063/1.123790 (3 pages) | Cited 6 times

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We present a technique for the transfer of silicon thin films. This transfer is effected by irradiating a hydrogenated amorphous silicon film deposited on a quartz substrate with an excimer laser pulse. The resulting release and accumulation of hydrogen at the film/substrate interface generates pressures sufficient to propel the silicon onto an adjacent glass receptor wafer. Transient optical transmission measurements indicate that the amorphous film is melted by the laser pulse and breaks into droplets during ejection. For fluences above 400 mJ/cm2, the transferred films adhere well to the receptors and can be smoothed using a second laser irradiation. © 1999 American Institute of Physics.
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79.20.Ds Laser-beam impact phenomena
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys
78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
78.47.-p Spectroscopy of solid state dynamics
42.62.-b Laser applications
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Sputter deposition-induced electron traps in epitaxially grown n-GaN

F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart

Appl. Phys. Lett. 74, 2173 (1999); http://dx.doi.org/10.1063/1.123791 (3 pages) | Cited 23 times

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We have used deep level transient spectroscopy to study the electrical properties of defects introduced in epitaxial n-GaN during sputter deposition of Au Schottky contacts. Four defects, located 0.22±0.02, 0.30±0.01, 0.40±0.01, and 0.45±0.10 eV below the conduction band, were characterized. The first of these defects has similar electronic properties as a radiation induced defect in GaN, while the second appears to be the same as a defect in the as-grown material. The latter two defects have not previously been observed in as-grown or processed epitaxial GaN. © 1999 American Institute of Physics.
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71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Cd Deposition by sputtering

Roles of the first atomic layers in growth of SrTiO3 films on LaAlO3 substrates

Dong-Wook Kim, Dae-Ho Kim, Bo-Soo Kang, T. W. Noh, D. R. Lee, and K.-B. Lee

Appl. Phys. Lett. 74, 2176 (1999); http://dx.doi.org/10.1063/1.123792 (3 pages) | Cited 28 times

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Growth behaviors of SrTiO3/LaAlO3 films could be varied substantially by controlling terminating atomic layers of the substrates. In a film on the LaO-terminated substrate, strain-induced roughening was observed. In a film on the AlO2-terminated substrate, the first atomic layer of the interface seemed to have lots of defects. However, the stress became quickly relaxed, so a SrTiO3 film could be grown in a layer-by-layer mode after a few monolayers. All these observations could be explained in terms of chemical matching between the atomic layers at the interface. © 1999 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Ct Interface structure and roughness
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains
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