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19 Apr 1999

Volume 74, Issue 16, pp. 2253-2392

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Nanoscale GaAs metal–semiconductor–metal photodetectors fabricated using nanoimprint lithography

Zhaoning Yu, Steven J. Schablitsky, and S. Y. Chou

Appl. Phys. Lett. 74, 2381 (1999); http://dx.doi.org/10.1063/1.123858 (3 pages) | Cited 25 times

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GaAs metal–semiconductor–metal photodetectors (MSM PDs) with a variety of nanoscale finger spacings and widths were fabricated using nanoimprint lithography (NIL). Compared with MSM-PDs fabricated using electron-beam lithography and photolithography, the MSM-PDs fabricated using NIL do not show observable degradation in the device characteristics if the imprinting pressures are kept at 600 psi or below, although they do degrade at higher pressures. © 1999 American Institute of Physics.  
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73.40.Sx Metal-semiconductor-metal structures
73.61.Ey III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
85.40.Hp Lithography, masks and pattern transfer

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ = 4.2 μm with AlSb barriers for improved carrier confinement

M. J. Pullin, H. R. Hardaway, J. D. Heber, C. C. Phillips, W. T. Yuen, R. A. Stradling, and P. Moeck

Appl. Phys. Lett. 74, 2384 (1999); http://dx.doi.org/10.1063/1.123859 (3 pages) | Cited 14 times

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Room-temperature InAs/InAs1−xSbx strained-layer superlattice light-emitting diodes (x ∼ 8%) are reported that emit at λ ∼ 4.2 μm with an internal efficiency of 2.8%. The structures are grown by molecular beam epitaxy on slightly mismatched InAs substrates and include a strained AlSb barrier layer to prevent electron migration to the dislocated substrate–epilayer interface region. Comparison with a near identical structure grown without the barrier layer indicates a factor of four improvement in device efficiency at room temperature. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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