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19 Apr 1999

Volume 74, Issue 16, pp. 2253-2392

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Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation

Hideki Takagi, Ryutaro Maeda, Naoe Hosoda, and Tadatomo Suga

Appl. Phys. Lett. 74, 2387 (1999); http://dx.doi.org/10.1063/1.123860 (3 pages) | Cited 14 times

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The residual stress originating form the thermal expansion mismatch has been a serious problem in the bonding of piezoelectric crystals onto silicon wafers. The room-temperature bonding method using argon-beam surface activation is applied to the bonding of lithium niobate and silicon. In this method, the surfaces of the specimens are etched by fast argon atom beam and bonded to each other in vacuum. Bonding strength equivalent to that of the bulk material is achieved without any heat treatment. Transmission electron microscope observations show intimate contact at the interface. This method is quite suitable for bonding dissimilar materials with thermal expansion mismatch, because the bonding is performed at room temperature throughout the whole process and no thermal stress is generated. © 1999 American Institute of Physics.
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85.30.-z Semiconductor devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.65.Cf Surface cleaning, etching, patterning
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.05.Cy Elemental semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Vacuum-ultraviolet laser absorption spectroscopy for absolute measurement of fluorine atom density in fluorocarbon plasmas

Kunihide Tachibana and Hideaki Kamisugi

Appl. Phys. Lett. 74, 2390 (1999); http://dx.doi.org/10.1063/1.123861 (3 pages) | Cited 19 times

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Absolute density measurement of fluorine atoms has been performed by a vacuum-ultraviolet (VUV) laser absorption technique in fluorocarbon plasmas. A VUV laser tunable around 95 nm covering the resonance lines of F atoms has been produced in Xe gas by a two-photon resonance four-wave-mixing technique. In this method, the background absorption by the parent gases and species produced in the plasma can be eliminated by scanning the wavelength, and the absolute density of F atoms can be derived accurately from the integrated absorption line profile. The measured values of the density varied from 1×1011 to 4×1012 cm−3, depending on the source gas species and the operating conditions of an inductively coupled radio-frequency (400 kHz) discharge. © 1999 American Institute of Physics.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
42.62.Eh Metrological applications; optical frequency synthesizers for precision spectroscopy
32.80.Wr Other multiphoton processes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
52.80.Pi High-frequency and RF discharges
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