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10 May 1999

Volume 74, Issue 19, pp. 2737-2895

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In situ x-ray diffraction study of an electric field induced phase transition in the single crystal relaxor ferroelectric, 92% Pb(Zn1/3Nb2/3)O3–8% PbTiO3

M. K. Durbin, E. W. Jacobs, J. C. Hicks, and S.-E. Park

Appl. Phys. Lett. 74, 2848 (1999); http://dx.doi.org/10.1063/1.124034 (3 pages) | Cited 78 times

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We have used in situ x-ray diffraction to measure strain curves of single crystals of 92% Pb(Zn1/3Nb2/3)O3–8% PbTiO3 poled in the 〈001〉 direction. We observed shifts in the (002) and (330) peaks as functions of applied voltage (in the 〈001〉 direction), thereby measuring the crystallographic strain. Our measurements confirm that the high strains observed using macroscopic methods reflect microscopic strains in the crystal lattice. By watching the disappearance of a rhombohedral splitting in the (330) peak, we also find direct evidence that the field-induced phase transition reported by S.-E. Park and T. R. Shrout [J. Appl. Phys. 82, 1804 (1997)] occurs between a pseudorhombohedral and tetragonal crystal structure. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
62.20.-x Mechanical properties of solids

Abrupt PbTiO3/SrTiO3 superlattices grown by reactive molecular beam epitaxy

J. C. Jiang, X. Q. Pan, W. Tian, C. D. Theis, and D. G. Schlom

Appl. Phys. Lett. 74, 2851 (1999); http://dx.doi.org/10.1063/1.124035 (3 pages) | Cited 63 times

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PbTiO3/SrTiO3 superlattices were grown on (001) SrTiO3 substrates by reactive molecular beam epitaxy (MBE). Sharp superlattice reflections were observed by x-ray diffraction. High-resolution transmission electron microscopy of a [(PbTiO3)10/(SrTiO3)10]15 superlattice revealed that the PbTiO3/SrTiO3 interface structure is atomically sharp. The superlattice interfaces are fully coherent; no misfit dislocations or other crystal defects were observed in the superlattice by transmission electron microscopy. Selected area electron diffraction patterns indicated that the PbTiO3 layers are oriented with the c axis parallel to the growth direction. The dimensional control and interface abruptness achieved in this model system indicate that MBE is a viable method for constructing oxide multilayers on a scale where enhanced dielectric effects are expected. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Ct Interface structure and roughness
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

G. D. Wilk and R. M. Wallace

Appl. Phys. Lett. 74, 2854 (1999); http://dx.doi.org/10.1063/1.124036 (3 pages) | Cited 17 times

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Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si. Capacitance–voltage measurements show an equivalent oxide thickness (tox) of less than 18 Å for a 50 Å HfSixOy film deposited directly on a Si substrate, with no significant dispersion of the capacitance for frequencies ranging from 10 kHz to 1 MHz. Current–voltage measurements show for the same film a leakage current of 1.2×10−6 A/cm2 at 1 V bias. Hysteresis in these films is measured to be less than 20 mV, the breakdown field is measured to be EBD ∼ 10 MV/cm, and the midgap interface state density is Dit ∼ 1011 cm−2 eV−1. Cross-sectional transmission electron microscopy shows no signs of reaction or crystallization in HfSixOy films on Si after being annealed at 800 °C for 30 min. © 1999 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
73.20.At Surface states, band structure, electron density of states
61.72.Cc Kinetics of defect formation and annealing

Improved properties of La2/3Ca1/3MnO3 thin films by addition of silver

R. Shreekala, M. Rajeswari, S. P. Pai, S. E. Lofland, V. Smolyaninova, K. Ghosh, S. B. Ogale, S. M. Bhagat, M. J. Downes, R. L. Greene, R. Ramesh, and T. Venkatesan

Appl. Phys. Lett. 74, 2857 (1999); http://dx.doi.org/10.1063/1.124037 (3 pages) | Cited 48 times

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Thin films of Ag-added La2/3Ca1/3MnO3 exhibit enhancement of several desirable characteristics over the pristine counterparts. We find that the addition of Ag results in a pronounced increase in the insulator–metal transition temperature (Tp) and ferromagnetic transition temperature (Tc). There is also a remarkable improvement in the magnetic and electrical homogeneity of the samples as indicated by narrower ferromagnetic resonance linewidths and narrower resistive transitions, respectively. The observed improvement in properties is inferred to be largely associated with improved oxygen stoichiometry of the films although microstructural effects are not ruled out. © 1999 American Institute of Physics.
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75.70.Ak Magnetic properties of monolayers and thin films
72.60.+g Mixed conductivity and conductivity transitions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Dd Nonmetallic ferromagnetic materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
61.66.Bi Elemental solids
61.66.Dk Alloys
75.47.Gk Colossal magnetoresistance
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
73.61.Ng Insulators
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