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10 May 1999

Volume 74, Issue 19, pp. 2737-2895

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Nonlinear quantum capacitance

Baigeng Wang, Xuean Zhao, Jian Wang, and Hong Guo

Appl. Phys. Lett. 74, 2887 (1999); http://dx.doi.org/10.1063/1.124047 (3 pages) | Cited 12 times

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We analyze the nonlinear voltage dependence of electrochemical capacitance for nanoscale conductors. This voltage dependence is due to the finite density of states of the conductors. Within Hartree theory we derive an exact expression for the electrochemical capacitance–voltage curve for a parallel plate system. The result suggests a quantum scanning capacitance microscopy at the nanoscale: by inverting the capacitance–voltage expression one is able to deduce the local spectral function of the nanoscale conductor. © 1999 American Institute of Physics.
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73.23.-b Electronic transport in mesoscopic systems

Periodic and depth-graded Cu/Si multilayer films for hard x-ray optics

David L. Windt

Appl. Phys. Lett. 74, 2890 (1999); http://dx.doi.org/10.1063/1.124048 (3 pages) | Cited 4 times

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We describe the growth and characterization of periodic and depth-graded Cu/Si multilayer structures for use as coatings in hard x-ray optics. Films have been grown by dc magnetron sputtering, and were characterized by grazing-incidence x-ray (8 keV) reflectance analysis. The x-ray reflectance of both periodic and depth-graded structures was found to be high, and stable at room temperature over a period of at least several months. The interface widths determined from fits to the x-ray reflectance data were found to lie in the range 0.23–0.3 nm. X-ray diffraction revealed no crystalline phases present in any of the films, only broad peaks indicating either an amorphous Cu or possibly copper–silicide phase. As a result of the small measured interface widths and the low x-ray absorption of Cu just below, and also far above the Cu K edge ( ∼ 9 keV), highly efficient depth-graded Cu/Si multilayer coatings can now be used for broadband, grazing-incidence x-ray mirrors, for x-ray energies greater than at least 100 keV. © 1999 American Institute of Physics.  
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07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Cd Deposition by sputtering

Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray absorption fine structures study at the Ni and Si L3,2 edge

S. J. Naftel, I. Coulthard, T. K. Sham, D.-X. Xu, L. Erickson, and S. R. Das

Appl. Phys. Lett. 74, 2893 (1999); http://dx.doi.org/10.1063/1.124049 (3 pages) | Cited 3 times

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We report a Ni and Si L3,2-edge x-ray absorption near edge structures (XANES) study of nickel–silicon interaction in submicron (0.15 and 0.2 μm) lines on a n-Si(100) wafer as well as a series of well characterized Ni–Si blanket films. XANES measurements recorded in both total electron yield and soft x-ray fluorescence yield indicate that under the selected silicidation conditions, the more desirable low resistivity phase, NiSi, is indeed the dominant phase in the subhalf-micron lines although the formation of this phase is less complete as the line becomes narrower and this is accompanied by a Ni rich surface. © 1999 American Institute of Physics.
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78.70.Dm X-ray absorption spectra
85.40.Ls Metallization, contacts, interconnects; device isolation
73.61.At Metal and metallic alloys
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.Cc Kinetics of defect formation and annealing
71.20.Be Transition metals and alloys
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