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10 May 1999

Volume 74, Issue 19, pp. 2737-2895

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Actively mode-locked erbium fiber ring laser using a Fabry–Perot semiconductor modulator as mode locker and tunable filter

Shenping Li and K. T. Chan

Appl. Phys. Lett. 74, 2737 (1999); http://dx.doi.org/10.1063/1.123998 (3 pages) | Cited 18 times

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A wavelength-tunable actively mode-locked erbium fiber ring laser was demonstrated using a Fabry–Perot semiconductor modulator. The modulator played the simultaneous roles of an intensity mode locker and a tunable optical filter. Stable single- or dual-wavelength nearly transform-limited picosecond pulses at gigabit repetition rates were generated. Continuous wavelength tuning was achieved by simply controlling the temperature of the modulator. Pulse train with a repetition rate up to 19.93 GHz (eight times the driving frequency) was obtained by using rational harmonic mode-locking technique. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Wd Fiber lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Ci Filters, zone plates, and polarizers
42.79.Hp Optical processors, correlators, and modulators

Fresnel coefficients of a rough interface

G. Lérondel and R. Romestain

Appl. Phys. Lett. 74, 2740 (1999); http://dx.doi.org/10.1063/1.123999 (3 pages) | Cited 9 times

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Second-order perturbation theory has been used to compute the optical transfer coefficients of a rough dielectric interface. The derivation proceeds through classical solution of Maxwell’s equations at normal incidence. Reflection and transmission coefficients were first obtained for an interface represented by a sine profile of wave vector G interacting with a planar wave polarized perpendicular to G. Second, the expressions have been generalized to a real rough interface, i.e., the sum of sine profiles, and arbitrary polarization. We discuss the validity of the linear approximation, comparing the reflection calculated by the more general Davies–Bennett formula to that calculated by our formula. It appears that, for most real multilayer systems, this approximation is valid. © 1999 American Institute of Physics.
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42.25.Gy Edge and boundary effects; reflection and refraction
42.25.Bs Wave propagation, transmission and absorption
42.25.Fx Diffraction and scattering

Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

Aleksey D. Andreev and Dmitry V. Donetsky

Appl. Phys. Lett. 74, 2743 (1999); http://dx.doi.org/10.1063/1.124000 (3 pages) | Cited 13 times

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We have carried out the microscopic calculations of Auger recombination and interband absorption in InGaAsSb/AlGaAsSb quantum-well (QW) lasers operating within wavelength range 2.3–2.6 μm. The calculations show that the dominant Auger process in these laser structures is the process with hole excitation from the quantized level in QW to the continuous spectrum. The total Auger coefficient shows a weak temperature dependence. Based on the results of calculations and recent measurements of the heterobarrier hole leakage current and modal gain in 2.3 μm InGaAsSb QW lasers, we have calculated the temperature dependence of the threshold current. It was shown that a significant value of the Auger coefficient and the temperature dependence of laser gain are the major factors determining the temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb QW lasers. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems

Optical characterization of visible multiquantum-well semiconductor lasers by collection/excitation modes of scanning near-field optical microscopy

N. H. Lu, Din Ping Tsai, C. S. Chang, and T. T. Tsong

Appl. Phys. Lett. 74, 2746 (1999); http://dx.doi.org/10.1063/1.124001 (3 pages) | Cited 4 times

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Both collection and excitation modes of scanning near-field optical microscopy were used to study a strained AlGaInP/Ga0.4In0.6P low power visible multiquantum-well laser diode. Collection and excitation modes provide the near-field optical propagating intensity distribution and local photoconductivity information, respectively, at the facet of laser diode. Results show highly localized spatial correlation of the laser diode structure and its optical performance at the facet. Defect level in the energy range of 60–380 meV below the conduction band in the highly n-doped (Al0.7Ga0.3)0.5In0.5P cladding layer was found by the excitation mode using the wavelengths of 543.5 and 632.8 nm. Spatially resolved near-field optical spectra of both stimulated and spontaneous emissions were acquired as well. Longitudinal modes of the stimulated emission of laser diode were observed locally. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
07.79.Fc Near-field scanning optical microscopes
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.45.+h Stimulated emission

Quasipermanent photochemical gratings in a dual use photorefractive polymer composite

Shane J. Strutz and L. Michael Hayden

Appl. Phys. Lett. 74, 2749 (1999); http://dx.doi.org/10.1063/1.124002 (3 pages) | Cited 5 times

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The dual nature of (3-(2-(4-(N,N-diethylamino)phenyl)ethenyl)-5,5-dimethyl-1,2-cyclohexenylidene)propanedinitrile (Lemke-e) allows us to write both quasipermanent and erasable holographic gratings in the same storage volume. In the presence of a triplet excited sensitizer, Lemke-e undergoes a photochemical reaction allowing the creation of quasipermanent photochemical holographic gratings. In addition, applying an electric field to the composite allows the storage of erasable photorefractive holograms in the same location as previously stored permanent photochemical holograms. Photochemical gratings (η>10%) can be written in less than 1 min while photorefractive gratings (η>50%) can be written in less than 1 s. The photochemical gratings have a dark lifetime of several days. © 1999 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.70.Jk Polymers and organics
42.70.Ln Holographic recording materials; optical storage media
82.50.-m Photochemistry
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Design parameters for lateral carrier confinement in quantum-dot lasers

J. K. Kim, T. A. Strand, R. L. Naone, and L. A. Coldren

Appl. Phys. Lett. 74, 2752 (1999); http://dx.doi.org/10.1063/1.124003 (3 pages) | Cited 20 times

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Quantum-dot (QD) lasers have fallen short of their promise of ultralow threshold and high characteristic temperature. Here, we report that QDs show great promise for controlling lateral carrier leakage. While oxide apertures continue to enable improved performance in vertical cavity surface emitting lasers (VCSELs) by reducing optical losses and current spreading, lateral carrier losses remain uncontrolled. We investigate QD active material in which lateral diffusion is intentionally reduced. Cathodoluminescence results demonstrate reduced lateral diffusion in the material with which we expect >50% reduction in the threshold current for 1-μm-wide edge emitters or 5-μm-diam VCSELs. However, initial edge-emitter results demonstrated 10% reduction due to unintended current spreading and lasing from higher states. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
42.60.By Design of specific laser systems
78.66.Fd III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Effects of fluorine dimer excimer laser radiation on the optical transmission and defect formation of various types of synthetic SiO2 glasses

Hideo Hosono, Masafumi Mizuguchi, Hiroshi Kawazoe, and Tohru Ogawa

Appl. Phys. Lett. 74, 2755 (1999); http://dx.doi.org/10.1063/1.124004 (3 pages) | Cited 42 times

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Changes in the optical absorption and the formation of point defects in three types of synthetic SiO2 glasses, wet (OH content; 120 ppm), dry (OH content <1 ppm), and fluorine (F)-doped (∼1 mol %) SiO2 glasses, by irradiation with fluorine dimer (F2) excimer laser light pulses ( ∼ 8 mJ/cm2/pulse×3.6×105 pulses) were examined by various spectroscopic methods. Intense optical absorptions were induced in the wet and dry silicas in the range of 4–8 eV, whereas the intensity of absorptions induced in the F-doped silica was smaller by an order of magnitude than that in the F-free glasses. The optical transmission at the wavelength of 157 nm after the irradiation was F-doped silica≫wet silica>dry silica. The dominant electron spin resonance-active defect in the irradiated specimens was the nonbridging oxygen-hole center (NBOHC) for the wet silica, or the E′ center in the dry silica. The concentration of NBOHCs or E′ centers in the F-doped silica was lower by an order of magnitude than that in the wet or dry silica. The present results suggest the possibility of using F-doped silica glasses as photomask materials for F2 laser lithography. © 1999 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.55.Jv Disordered structures; amorphous and glassy solids

Low-threshold 7.3 μm quantum cascade lasers grown by gas-source molecular beam epitaxy

S. Slivken, A. Matlis, A. Rybaltowski, Z. Wu, and M. Razeghi

Appl. Phys. Lett. 74, 2758 (1999); http://dx.doi.org/10.1063/1.124005 (3 pages) | Cited 13 times

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We report low-threshold 7.3 μm superlattice-based quantum cascade lasers. The threshold current density is 3.4 kA/cm2 at 300 K and 1.25 kA/cm2 at 79 K in pulsed mode for narrow (∼20 μm), 2-mm-long laser diodes. The characteristic temperature (T0) is 210 K. The slope efficiencies are 153 and 650 mW/A at 300 and 100 K, respectively. Power output is in excess of 100 mW at 300 K. Laser far-field intensity measurements give divergence angles of 64° and 29° in the growth direction and in the plane of the quantum wells, respectively. Far-field simulations show excellent agreement with the measured results. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Fabrication of electro-optic Pb(Zr, Ti)O3 heterostructure waveguides on Nb-doped SrTiO3 by solid-phase epitaxy

K. Nashimoto, S. Nakamura, T. Morikawa, H. Moriyama, M. Watanabe, and E. Osakabe

Appl. Phys. Lett. 74, 2761 (1999); http://dx.doi.org/10.1063/1.124006 (3 pages) | Cited 17 times

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Pb(Zr, Ti)O3 (PZT) heterostructure optical waveguides were grown on low resistivity Nb-doped SrTiO3(100) substrates by solid-phase epitaxy. The propagation loss was reduced to 1.7 dB/cm at the wavelength of 1.3 μm by introducing an epitaxial buffer layer between the PZT waveguide and the Nb-doped SrTiO3 substrate. An electro-optic beam deflector with an indium–tin–oxide prism electrode on the surface of the PZT waveguide showed efficient laser beam deflection as great as 3.3° (58 mrad) by applying 20 V between the prism electrode and the substrate. An index change higher than 0.001 at 5 V and an average apparent electro-optic coefficient larger than 46 pm/V were estimated from the deflection characteristic. © 1999 American Institute of Physics.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Gn Optical waveguides and couplers
42.86.+b Optical workshop techniques
81.15.Np Solid phase epitaxy; growth from solid phases
42.79.Bh Lenses, prisms and mirrors

Pulsed excitation of low-mobility light-emitting diodes: Implication for organic lasers

N. Tessler, D. J. Pinner, V. Cleave, D. S. Thomas, G. Yahioglu, P. Le Barny, and R. H. Friend

Appl. Phys. Lett. 74, 2764 (1999); http://dx.doi.org/10.1063/1.124007 (3 pages) | Cited 31 times

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We present a theoretical and experimental study of electrical pulsed excitation in polymer light-emitting diodes (LEDs). We find that the low mobility results in a relatively high charge density within an electrically pumped structure. The broad spectrum of the charge-induced absorption and its overlap with the ground-state absorption pose a significant barrier for achieving net gain and lasing. We suggest an approach that might circumvent this problem using suitable emitters and an appropriate driving scheme. We also suggest methods for ultrafast modulation of LEDs as well as direct determination of the space charge within the recombination zone. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
42.60.Fc Modulation, tuning, and mode locking

An ultrafast spectroscopy study of stimulated emission in poly(9,9-dioctylfluorene) films and microcavities

T. Virgili, D. G. Lidzey, D. D. C. Bradley, G. Cerullo, S. Stagira, and S. De Silvestri

Appl. Phys. Lett. 74, 2767 (1999); http://dx.doi.org/10.1063/1.124008 (3 pages) | Cited 23 times

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We report measurements of stimulated emission in poly(9,9-dioctylfluorene). We find a gain coefficient of 1.2×104 cm−1 for 100 nm-thick films at an excitation energy density of 9.9 mJ/cm2. Using ultrafast pump–probe measurements, we have studied the effect of cavity optical confinement. A strong shift of the cavity resonance due to nonlinear refraction is observed. © 1999 American Institute of Physics.
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78.45.+h Stimulated emission
78.66.Qn Polymers; organic compounds
78.47.-p Spectroscopy of solid state dynamics
42.55.Sa Microcavity and microdisk lasers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Hj Laser materials
42.70.Jk Polymers and organics
78.40.Me Organic compounds and polymers

Time-resolved characteristics of phase conjugation in metal–semiconductor phase transition in VO2

N. K. Berger and R. Shuker

Appl. Phys. Lett. 74, 2770 (1999); http://dx.doi.org/10.1063/1.124009 (3 pages) | Cited 4 times

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The change in the reflection behavior of VO2 films for the 1.06 μm wavelength at the semiconductor–metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm2, respectively, the reflection coefficient of the conjugated wave was ∼1%, the threshold energy density was 8 mJ/cm2, the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed. © 1999 American Institute of Physics.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
71.30.+h Metal-insulator transitions and other electronic transitions
78.66.Li Other semiconductors
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers
78.47.-p Spectroscopy of solid state dynamics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Near-field optical fiber probe optimized for illumination–collection hybrid mode operation

T. Saiki and K. Matsuda

Appl. Phys. Lett. 74, 2773 (1999); http://dx.doi.org/10.1063/1.123307 (3 pages) | Cited 80 times

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The structure of a near-field probe was optimized for illumination-collection hybrid mode (I–C mode) operation. We developed a highly sensitive probe with a sharp-edged aperture and a double-tapered structure fabricated by a chemical etching technique. Through measurement of the photoluminescence (PL, λ=1 μm) image of single quantum dots, the performance of many versions of the probe with different aperture diameters, ranging from 80 to 500 nm, was systematically evaluated. In addition to the throughput and spatial resolution, the absolute value of the PL collection efficiency of the probe in (I–C mode) was also estimated for the first time. A collection efficiency several times greater than that of an objective lens with a numerical aperture of 0.8 was achieved with high spatial resolution in the 130–200 nm (λ/8–λ/5) range. © 1999 American Institute of Physics.
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07.60.Vg Fiber-optic instruments
42.81.Pa Sensors, gyros
78.55.Cr III-V semiconductors
07.60.Rd Visible and ultraviolet spectrometers
78.66.Fd III-V semiconductors
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