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10 May 1999

Volume 74, Issue 19, pp. 2737-2895

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Strain and oxygenation effects on superconductivity of La1.85Sr0.15CuO4 thin films

Weidong Si, Hong-Cheng Li, and X. X. Xi

Appl. Phys. Lett. 74, 2839 (1999); http://dx.doi.org/10.1063/1.124031 (3 pages) | Cited 28 times

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We have measured normal-state and superconducting properties of La1.85Sr0.15CuO4 thin films as a function of lattice strain and oxygen content. Strain was controlled by depositing SrLaAlO4 buffer layers of different thickness on SrTiO3 substrates, and an ozone/molecular oxygen mixture was used during cooling to achieve better oxygen uptake. We found that both full oxygenation and compressive in-plane strain are critical for the properties of the La1.85Sr0.15CuO4 thin films, and they are closely correlated. © 1999 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
61.66.Bi Elemental solids
61.66.Dk Alloys
68.60.Bs Mechanical and acoustical properties

Preparation of rare-earth manganite-oxide thin films by metalorganic aerosol deposition technique

V. Moshnyaga, I. Khoroshun, A. Sidorenko, P. Petrenko, A. Weidinger, M. Zeitler, B. Rauschenbach, R. Tidecks, and K. Samwer

Appl. Phys. Lett. 74, 2842 (1999); http://dx.doi.org/10.1063/1.124032 (3 pages) | Cited 35 times

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A chemical deposition technique based on the use of solutions of metal-chelate coordination compounds has been applied to prepare rare-earth–manganite-oxide thin films. La0.67Ca0.33MnO3 and La0.67Sr0.33MnO3 thin films have been grown epitaxially on MgO(100) substrates and characterized by structural (x-ray diffraction analysis, atomic force microscopy) and magnetotransport (T = 4.2–300 K, and B = 0–5 T) measurements. © 1999 American Institute of Physics.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
75.70.Ak Magnetic properties of monolayers and thin films
75.47.Gk Colossal magnetoresistance
68.55.-a Thin film structure and morphology
72.60.+g Mixed conductivity and conductivity transitions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ng Insulators
75.50.Dd Nonmetallic ferromagnetic materials

Spin-polarized current in semimagnetic semiconductor heterostructures

V. A. Chitta, M. Z. Maialle, S. A. Leão, and M. H. Degani

Appl. Phys. Lett. 74, 2845 (1999); http://dx.doi.org/10.1063/1.124033 (3 pages) | Cited 9 times

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A semimagnetic semiconductor tunneling device is proposed as a spin filter. This device, which gives spin-polarized electron current, is obtained by choosing different layers of II-VI compounds, with magnetic moments of substitutional ions of Mn2+ in some of the layers. We present a theoretical calculation of the tunneling current for the device, in which electron spin-flip scattering produced by the thermal fluctuations of the magnetic moments is accounted for and found to be inefficient in depolarizing the current. A different system is also investigated to show more clearly the effects of spin-flip scattering on the tunneling current. © 1999 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Pp Magnetic semiconductors
75.45.+j Macroscopic quantum phenomena in magnetic systems
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
75.20.Hr Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions
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