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4 Jan 1999

Volume 74, Issue 1, pp. 1-158

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Characteristic tunnel-type conductivity and magnetoresistance in a CoO-coated monodispersive Co cluster assembly

D. L. Peng, K. Sumiyama, S. Yamamuro, T. Hihara, and T. J. Konno

Appl. Phys. Lett. 74, 76 (1999); http://dx.doi.org/10.1063/1.122956 (3 pages) | Cited 21 times

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We have studied electrical conductivity, σ, and magnetoresistance in a CoO-coated monodispersive Co cluster assembly fabricated by a plasma–gas–aggregation-type cluster beam deposition technique. The temperature dependence of σ is described in the form of log σ vs 1/T for 7<T<80 K. The magnetoresistance ratio (ρ0−ρ3T)/ρ0 increases sharply with decreasing temperature below 25 K: from 3.5% at 25 K to 20.5% at 4.2 K. This marked increase (by a factor of 6) is much larger than those observed for conventional metal–insulator granular systems. These results are ascribed to the Coulomb blockade effect in the monodispersed cluster assemblies. © 1999 American Institute of Physics.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.23.Hk Coulomb blockade; single-electron tunneling

Electronic and transport properties of N-P doped nanotubes

Keivan Esfarjani, Amir A. Farajian, Yuichi Hashi, and Yoshiyuki Kawazoe

Appl. Phys. Lett. 74, 79 (1999); http://dx.doi.org/10.1063/1.122957 (3 pages) | Cited 56 times

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Electronic properties of a doped zigzag nanotube are investigated by a self-consistent tight-binding method. We propose that a doped nanotube with donor atoms on one side and acceptors on the other can function as a nano diode. It is shown that a potential step in the tube, created by two different types of doping in this case, causes the nonlinear rectifying effect. © 1999 American Institute of Physics.
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71.20.Tx Fullerenes and related materials; intercalation compounds
73.61.Wp Fullerenes and related materials
85.65.+h Molecular electronic devices
73.40.Ei Rectification
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields

H. Kollmer, Jin Seo Im, S. Heppel, J. Off, F. Scholz, and A. Hangleiter

Appl. Phys. Lett. 74, 82 (1999); http://dx.doi.org/10.1063/1.122958 (3 pages) | Cited 41 times

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We have studied optical transitions in GaInN/GaN single and multiple quantum wells using time-resolved photoluminescence spectroscopy. Our results show that the energy positions of the dominant emission lines strongly depend both on the well width and on the number of wells. In the case of multiple quantum wells, time-resolved measurements clearly distinguish multiple emission lines. These observations are consistently explained by considering the large built-in piezoelectric field in strained GaInN quantum wells. The multiple emission lines are attributed to intra- and interwell transitions between nearest and next-nearest neighbors. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
77.65.Ly Strain-induced piezoelectric fields
78.47.-p Spectroscopy of solid state dynamics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Magneto-optical Kerr effect and optical properties of amorphous Co1−xSix (0.59 ⩽ × ⩽ 0.77) alloy films

J. H. Cai, W. Yang, T. J. Zhou, G. Gu, and Y. W. Du

Appl. Phys. Lett. 74, 85 (1999); http://dx.doi.org/10.1063/1.122959 (3 pages) | Cited 1 time

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The Kerr spectra and optical constants of amorphous Co1−xSix (0.59 ⩽ × ⩽ 0.77) alloy films were measured in the spectral range 1.6–3.5 eV. It was found that there is rather considerable Kerr rotation near the high-energy side of 3.5 eV for the films (0.67 ⩽ × ⩽ 0.75), and there is a maximum value of −0.35°, which is comparable with that of pure Co, at x = 0.75. The considerable Kerr rotation was ascribed to the following two causes: (i) the finite, but nonzero, nondiagonal element of dielectric function; (ii) the large optical constant effect due to the appropriate diagonal element of dielectric function. These changes of dielectric function originated from the metal-to-semiconductor transition controlled by Si concentration. There may be potential magneto-optical application in blue light range for such kinds of material. © 1999 American Institute of Physics.
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78.20.Ls Magneto-optical effects
78.66.Bz Metals and metallic alloys
78.66.Jg Amorphous semiconductors; glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Kc Metals, semimetals, and alloys
42.79.Wc Optical coatings

Thermionic emission cooling in single barrier heterostructures

Ali Shakouri, Chris LaBounty, Joachim Piprek, Patrick Abraham, and John E. Bowers

Appl. Phys. Lett. 74, 88 (1999); http://dx.doi.org/10.1063/1.122960 (2 pages) | Cited 38 times

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Nonisothermal transport in InGaAsP-based heterostructure integrated thermionic coolers is investigated experimentally. Cooling on the order of a degree over 1 μm thick barriers has been observed. This method can be used to enhance thermoelectric properties of semiconductors beyond what can be achieved with the conventional Peltier effect. © 1999 American Institute of Physics.
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73.50.Lw Thermoelectric effects
84.60.Ny Thermionic conversion
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Flux flow steps in a triangular cell of long Josephson junctions

G. Carapella, G. Costabile, and P. Sabatino

Appl. Phys. Lett. 74, 90 (1999); http://dx.doi.org/10.1063/1.122961 (3 pages) | Cited 2 times

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Flux flow steps are experimentally found in a triangular cell of long Josephson junctions that we successfully fabricated. Their behavior at the relevant values of the magnetic flux linked to the cell (Φ = 0 and Φ = Φ0/2) is compared with the one predicted by numerical simulations of the coupled sine-Gordon equations that model the system. Qualitative agreement between numerical and experimental results is found. © 1999 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
85.25.Cp Josephson devices
74.20.-z Theories and models of superconducting state

Light-emissive nonvolatile memory effects in porous silicon diodes

Koki Ueno and Nobuyoshi Koshida

Appl. Phys. Lett. 74, 93 (1999); http://dx.doi.org/10.1063/1.122962 (3 pages) | Cited 18 times

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It is demonstrated that there are distinct off and on states in the current–voltage characteristics of porous silicon (PS) diodes, and that the visible electroluminescence (EL) is observed in the on state. The PS diodes are composed of semitransparent thin Au films, rapid thermal oxidization (RTO)-treated PS layers (∼0.5 μm thick), p-type Si substrates, and ohmic back contacts. After the PS layers were prepared by anodizing Si wafers in an ethanoic HF solution, the samples were treated by RTO process. The bistable states of this PS diode can be simply and reversibly controlled by the external bias voltage. Based on the behavior of the EL and capacitance–voltage characteristics, the model of memory effect is presented, in which field-induced carrier injection and ejection into and from silicon nanocrystallites strongly affects the carrier transport. © 1999 American Institute of Physics.
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73.61.Cw Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
78.60.Fi Electroluminescence
85.30.Kk Junction diodes
81.65.Mq Oxidation

Phase stability for the in situ growth of Nd1+xBa2−xCu3Oy films using pulsed-laser deposition

C. Cantoni, D. P. Norton, D. M. Kroeger, M. Paranthaman, D. K. Christen, D. Verebelyi, R. Feenstra, D. F. Lee, E. D. Specht, V. Boffa, and S. Pace

Appl. Phys. Lett. 74, 96 (1999); http://dx.doi.org/10.1063/1.123162 (3 pages) | Cited 23 times

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We have determined the stability line in the 1/T−log[P(O2)] phase space for the synthesis of Nd1+xBa2−xCu3Oy (NdBCO) films. A systematic study of Tc, Jc, and ρ(T) dependence on oxygen partial pressure and temperature for the deposition of thin NdBCO films grown by pulsed-laser deposition was performed. The conditions for optimal NdBCO film growth were determined by varying oxygen partial pressure from 0.02 to 400 mTorr, and substrate temperature between 730 and 800 °C. The results show that the best NdBCO films are obtained at oxygen pressures in the range of 0.2–1.2 mTorr, depending on the substrate temperature. This is more than two orders-of-magnitude lower than the correspondent oxygen pressure appropriate for YBa2Cu3O7−δ film growth. © 1999 American Institute of Physics.
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74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
81.15.Fg Pulsed laser ablation deposition
68.55.Nq Composition and phase identification

Size and strain effects in the E1-like optical transitions of InAs/InP self-assembled quantum dot structures

J. A. Prieto, G. Armelles, J. Groenen, and R. Carles

Appl. Phys. Lett. 74, 99 (1999); http://dx.doi.org/10.1063/1.122963 (3 pages) | Cited 13 times

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The optical transitions of uncapped and capped InAs/InP self-assembled quantum dot structures in the energy range of the bulk InAs E1 transition are studied using modulation spectroscopy and Raman scattering. Islands and wetting layer exhibit one and two features, respectively. The deformation potential theory and the single band effective mass approximation account for the island-related feature successfully in a wide island-height range (3–7 nm). These models also explain the existence of the highest energy wetting layer related feature, but not of the lowest energy one. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Mx High-frequency effects; plasma effects
68.35.Ct Interface structure and roughness
78.30.Fs III-V and II-VI semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Band-gap narrowing and potential fluctuation in Si-doped GaN

In-Hwan Lee, J. J. Lee, P. Kung, F. J. Sanchez, and M. Razeghi

Appl. Phys. Lett. 74, 102 (1999); http://dx.doi.org/10.1063/1.122964 (3 pages) | Cited 40 times

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We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities. © 1999 American Institute of Physics.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.20.At Surface states, band structure, electron density of states

Crossed anisotropies in FeB/CoSiB bilayers induced by the bowed-substrate sputtering technique

D. Garcia, F. J. Castaño, C. Prados, M. Vázquez, and F. Castaño

Appl. Phys. Lett. 74, 105 (1999); http://dx.doi.org/10.1063/1.122965 (3 pages) | Cited 4 times

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FeB/CoSiB bilayers were deposited onto bowed glass substrates using the radio frequency sputtering technique. On removing the bilayers from the sputtering chamber, a magnetoelastic anisotropy was induced due to the compressive stress developed when the substrates recovered their initial planar shape. The bulk magnetic behavior was investigated using magnetometry techniques over a wide temperature range (5–350 K). The surface magnetism was analyzed using room-temperature Kerr magnetometry. Due to the positive/negative magnetostrictive nature of each of the layers deposited, the induced anisotropies are found to be crossed. Evidence of crossed anisotropies is obtained from the surface hysteresis loops as well as from the low-temperature thermomagnetic behavior. © 1999 American Institute of Physics.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.15.Cd Deposition by sputtering
75.80.+q Magnetomechanical effects, magnetostriction
75.30.Gw Magnetic anisotropy
75.70.Rf Surface magnetism
78.20.Ls Magneto-optical effects
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Avalanche-induced excess noise in polycrystalline silicon thin-film transistors

C. A. Dimitriadis, G. Kamarinos, J. Brini, E. K. Evangelou, and V. K. Gueorguiev

Appl. Phys. Lett. 74, 108 (1999); http://dx.doi.org/10.1063/1.122966 (3 pages) | Cited 4 times

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The low-frequency noise behavior of polycrystalline silicon thin-film transistors, operated in the avalanche multiplication region of the output characteristics, is investigated. The avalanche-induced current noise, originating from generation-recombination processes in the depletion region of the drain junction, can be described by the carrier number fluctuation model. Using a model for the excess noise in silicon-on-insulator metal-oxide-semiconductor field-effect transistors operated in the kink regime, an analytical expression for the avalanche-induced current noise is derived taking into account an exponential distribution of the gap states. Comparison of the experimental noise data with the theoretical model indicates that, in addition to the avalanche multiplication, hot-carrier effects contribute significantly to the current increase in the avalanche regime. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.At Surface states, band structure, electron density of states
72.20.Ht High-field and nonlinear effects
73.50.Fq High-field and nonlinear effects
85.30.De Semiconductor-device characterization, design, and modeling

Tunneling-enhanced recombination in Cu(In, Ga)Se2 heterojunction solar cells

U. Rau

Appl. Phys. Lett. 74, 111 (1999); http://dx.doi.org/10.1063/1.122967 (3 pages) | Cited 33 times

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This letter presents an analytical model for tunneling-enhanced recombination current in the space charge region of semiconductor junctions. We investigate current–voltage characteristics of different types of Cu(In, Ga)Se2-based heterojunction solar cells in a temperature range from 100 to 340 K. The temperature dependence of the saturation current and of the diode ideality factor of these devices are well described by the closed form expressions derived by the present approach. © 1999 American Institute of Physics.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling

The induced phase transformation and oxygen vacancy relaxation in La-modified bismuth titanate ceramics

A. Q. Jiang, Z. X. Hu, and L. D. Zhang

Appl. Phys. Lett. 74, 114 (1999); http://dx.doi.org/10.1063/1.122968 (3 pages) | Cited 37 times

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Nanopowders of Bi2Ti2O7 with various La modifications were fabricated by chemical coprecipitation. As sintered at high temperature, the phase structure in powders translates into (La0.22Bi0.78)4Ti3O12 and (La0.26Bi0.74)2Ti4O11 with increasing La concentration, respectively. Dielectric and nonlinear resistivity investigations in bulk ceramics show that oxygen vacancy relaxation or defect dipole polarization contributes considerably to the dielectric permittivity, while the mechanism is shut off under a threshold field dependent on phase transition as well as temperature. Furthermore, the quantitative analysis of x-ray photoelectron spectroscopy indicates the deviation of oxygen element composition at surfaces of (La0.22Bi0.78)4Ti3O12 ceramic grains from the standard ratio. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.80.B- Phase transitions and Curie point
61.72.J- Point defects and defect clusters
61.46.-w Structure of nanoscale materials
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
77.22.Ch Permittivity (dielectric function)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.35.Dv Composition, segregation; defects and impurities
61.66.Bi Elemental solids
61.66.Dk Alloys

Molecular reorientation and deformation of a freely suspended ferroelectric liquid crystal film

Sadahito Uto, Masanori Ozaki, and Katsumi Yoshino

Appl. Phys. Lett. 74, 117 (1999); http://dx.doi.org/10.1063/1.122969 (3 pages) | Cited 14 times

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A study of the deformation of a freely suspended ferroelectric liquid crystal film induced by an alternating electric field has been carried out. A notable peak of the magnitude of the deformation was observed at the damping frequency of the molecular reorientation. A deformation that depends on the polarity of the applied field was observed in the frequency range higher than the damping frequency of the molecular reorientation. © 1999 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
68.15.+e Liquid thin films
62.10.+s Mechanical properties of liquids
77.80.-e Ferroelectricity and antiferroelectricity

Fabrication and stimulated emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation

Xinwei Zhao, Shuji Komuro, Hideo Isshiki, Yoshinobu Aoyagi, and Takuo Sugano

Appl. Phys. Lett. 74, 120 (1999); http://dx.doi.org/10.1063/1.122970 (3 pages) | Cited 45 times

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Er-doped nanocrystalline Si (nc-Si) waveguides were fabricated on Si substrates and investigated by optical pumping. A stimulated emission at 1540 nm was demonstrated at room temperature. The sizes of the fabricated Er-doped nc-Si waveguides were 5000 nm×200 nm×L, where L is the cavity length and is changed from 1 to 10 mm. Superlinear optical outputs at 1540 nm were observed for the waveguides longer than 3 mm. The threshold of the optical output where the stimulated emission occurs is in the order of 10 MW/cm2, and is demonstrated to depend on the cavity length of the waveguides. A large reduction of decay lifetimes of the light output from a cleavage facet of the Er-doped nc-Si waveguides was observed when the pumping power density exceeded the thresholds indicating an increase of transition probabilities in intra-4f electrons in Er3+ ions caused by the stimulated emission. Better 1540 nm laser performance and lower pumping power density should be obtained by optimizing the device structure and increasing the Er concentration. © 1999 American Institute of Physics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
81.15.Fg Pulsed laser ablation deposition
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.07.-b Nanoscale materials and structures: fabrication and characterization

Frequency tuning of optical parametric generator in periodically poled optical superlattice LiNbO3 by electro-optic effect

Yan-qing Lu, Jian-jun Zheng, Ya-lin Lu, Nai-ben Ming, and Zu-yan Xu

Appl. Phys. Lett. 74, 123 (1999); http://dx.doi.org/10.1063/1.122971 (3 pages) | Cited 25 times

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Frequency tuning of optical parametric generators in periodically poled LiNbO3 by applying a periodic electric field was demonstrated. Remarkable wavelength change was achieved. The dependence of the wavelength shift on the applied field shows a linear relationship. The tuning rates exceeding 3 nm/(kV/mm) were obtained. The phenomenon of dispersion in electro-optic tuning was predicted. Possible applications were discussed. © 1999 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.79.Wc Optical coatings
78.66.Nk Insulators
78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Metastability and switching in the vortex state of 2H-NbSe2

S. S. Banerjee, N. G. Patil, S. Ramakrishnan, A. K. Grover, S. Bhattacharya, G. Ravikumar, P. K. Mishra, T. V. Chandrasekhar Rao, V. C. Sahni, and M. J. Higgins

Appl. Phys. Lett. 74, 126 (1999); http://dx.doi.org/10.1063/1.123139 (3 pages) | Cited 20 times

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History-dependent metastable states with different bulk properties are formed in the vortex state of the type-II superconductor 2H-NbSe2. Magnetic measurements demonstrate the difference between the shielding responses of a field- and a zero-field-cooled state, and provide a procedure for switching the system from one state to the other. © 1999 American Institute of Physics.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.25.Op Mixed states, critical fields, and surface sheaths
74.25.Ha Magnetic properties including vortex structures and related phenomena
74.25.Sv Critical currents

Resonant enhancement of the photocurrent in multiple-quantum-well photovoltaic devices

O. Y. Raisky, W. B. Wang, R. R. Alfano, C. L. Reynolds, D. V. Stampone, and M. W. Focht

Appl. Phys. Lett. 74, 129 (1999); http://dx.doi.org/10.1063/1.122972 (3 pages) | Cited 7 times

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Sequential resonant tunneling is proposed to enhance the photocurrent and reduce recombination losses in photovoltaic devices based on multiple-quantum-well (MQW) heterostructures. An InGaAsP/InP MQW p–i–n diode with built-in sequential resonant tunneling has been fabricated, and demonstrates an increase in the photocurrent and reduction in photoluminescence intensity. These effects are attributed to the resonance tunneling effect. © 1999 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.23.-b Electronic transport in mesoscopic systems
78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors

Metallic resistively coupled single-electron transistor

Yu. A. Pashkin, Y. Nakamura, and J. S. Tsai

Appl. Phys. Lett. 74, 132 (1999); http://dx.doi.org/10.1063/1.122973 (3 pages) | Cited 9 times

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We have fabricated and measured transport properties of resistively coupled single-electron transistors (R-SETs). In our version, a chromium thin-film resistive strip served as a gate and was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx/Al tunnel junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb blockade pattern was observed. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data and indicate excessive electron temperature of the devices. © 1999 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
85.35.Gv Single electron devices

Possible control method for single-electron tunneling based on environmental-impedance modulation

Fujio Wakaya, Shuichi Iwabuchi, Hitoshi Higurashi, Yosuke Nagaoka, and Kenji Gamo

Appl. Phys. Lett. 74, 135 (1999); http://dx.doi.org/10.1063/1.122974 (3 pages)

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A device that consists of a double tunnel junction and an environmental impedance is considered. The numerical results obtained show that the number of the island charge and the net current of the single-electron-tunneling (SET) device can be controlled by changing the resistive environmental impedance. This suggests a control method for SET devices. © 1999 American Institute of Physics.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Gk Tunneling
85.35.Gv Single electron devices

Accurate growth rate determination on rotating substrates using electron diffraction dynamics

W. Braun, H. Möller, and Y.-H. Zhang

Appl. Phys. Lett. 74, 138 (1999); http://dx.doi.org/10.1063/1.122975 (3 pages) | Cited 4 times

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Reflection high-energy electron diffraction oscillation frequencies are determined by measuring the width of the specular spot perpendicular to the surface during substrate rotation. Substrate rotation and data acquisition are phase locked to obtain exact rotation frequencies, allowing the inclusion of satellite peaks in the measurement. The method has a typical accuracy of well below 1% and provides a practical means to measure growth rates on rotating substrates. © 1999 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
07.05.Hd Data acquisition: hardware and software

Near-field scanning optical nanolithography using amorphous silicon photoresists

M. K. Herndon, R. T. Collins, R. E. Hollingsworth, P. R. Larson, and M. B. Johnson

Appl. Phys. Lett. 74, 141 (1999); http://dx.doi.org/10.1063/1.122976 (3 pages) | Cited 29 times

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Near-field scanning optical microscopy (NSOM) patterning of hydrogenated amorphous silicon (a-Si:H) has been explored. Our sample preparation technique produces films that are stable over several days. The etching process used is highly selective, allowing the unexposed a-Si:H to be completely removed while patterns with line heights equal to the original film thickness remain in exposed regions. We are able to generate patterns with and without the use of light. We have found that the probe dither amplitude greatly affects the linewidth and height of patterns generated without light. We also find that the exposure required for the NSOM to optically generate patterns agrees with threshold dosages determined by far-field exposure studies. Feature sizes of approximately 100 nm, comparable to the probe diameter, were obtained. © 1999 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
81.05.Gc Amorphous semiconductors

A self-assembled microlensing rotational probe

James P. Brody and Stephen R. Quake

Appl. Phys. Lett. 74, 144 (1999); http://dx.doi.org/10.1063/1.122977 (3 pages) | Cited 13 times

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A technique to measure microscopic rotational motion is presented. When a small fluorescent polystyrene microsphere is attached to a larger polystyrene microsphere, the larger sphere acts as a lens for the smaller microsphere and provides an optical signal that is a strong function of the azimuthal angle. We demonstrate the technique by measuring the rotational diffusion constant of the microsphere in solutions of varying viscosity and discuss the feasibility of using this probe to measure rotational motion of biological systems. © 1999 American Institute of Physics.
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87.64.M- Optical microscopy
87.15.Vv Diffusion
42.15.Dp Wave fronts and ray tracing

Capacitance–voltage characteristics of liquid crystal displays with periodic interdigital electrodes

C.-J. Chen, K. R. Sarma, and A. Kolosovskaya

Appl. Phys. Lett. 74, 147 (1999); http://dx.doi.org/10.1063/1.123134 (3 pages) | Cited 1 time

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Capacitance–voltage properties of the liquid crystal displays (LCD) with periodic interdigital electrodes (PIE) are characterized. The extreme capacitances at high and low driving voltages are derived analytically, based on the technique of conformal mapping. Its validity is verified by carrying out the two-dimensional simulations numerically. The results of theoretical modeling agree reasonably well with the capacitance measurement of an LCD with PIEs. © 1999 American Institute of Physics.
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85.60.Pg Display systems
42.79.Kr Display devices, liquid-crystal devices
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