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24 May 1999

Volume 74, Issue 21, pp. 3081-3230

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Electroluminescence of europium silicate thin film on silicon

Jifa Qi, Takahiro Matsumoto, Masanori Tanaka, and Yasuaki Masumoto

Appl. Phys. Lett. 74, 3203 (1999); http://dx.doi.org/10.1063/1.124105 (3 pages) | Cited 13 times

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We report an electroluminescent device fabricated by a europium silicate layer on a silicon substrate. The device exhibits uniform-intense white color electroluminescence with an external quantum efficiency about 0.1% at room temperature, a low operating threshold voltage (about 6 V) and a fast response to the modulation signal at the frequency of 1 MHz. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
81.15.Cd Deposition by sputtering
78.66.Li Other semiconductors

Combined laser and atomic force microscope lithography on aluminum: Mask fabrication for nanoelectromechanical systems

G. Abadal, A. Boisen, Z. J. Davis, O. Hansen, and F. Grey

Appl. Phys. Lett. 74, 3206 (1999); http://dx.doi.org/10.1063/1.124106 (3 pages) | Cited 10 times

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A direct-write laser system and an atomic force microscope (AFM) are combined to modify thin layers of aluminum on an oxidized silicon substrate, in order to fabricate conducting and robust etch masks with submicron features. These masks are very well suited for the production of nanoelectromechanical systems (NEMS) by reactive ion etching. In particular, the laser-modified areas can be subsequently locally oxidized by AFM and the oxidized regions can be selectively removed by chemical etching. This provides a straightforward means to define the overall conducting structure of a device by laser writing, and to perform submicron modifications by AFM oxidation. The mask fabrication for a nanoscale suspended resonator bridge is used to illustrate the advantages of this combined technique for NEMS. © 1999 American Institute of Physics.
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07.10.Cm Micromechanical devices and systems
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
07.79.Lh Atomic force microscopes
81.65.Cf Surface cleaning, etching, patterning
81.65.Mq Oxidation

Interface engineering in preparation of organic surface-emitting diodes

L. S. Hung and C. W. Tang

Appl. Phys. Lett. 74, 3209 (1999); http://dx.doi.org/10.1063/1.124107 (3 pages) | Cited 83 times

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Surface-emitting organic light emitting diode (OLED) was prepared by sputter deposition of indium-tin-oxide on a buffered organic layer structure. Confirming a previous report, a thin film of copper phthalocyanine (CuPc) was found to be a useful buffer layer in preventing sputter damage to the OLED layer structure, particularly the underlying Alq emissive layer. However, the CuPc layer forms an electron-injection barrier with the Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface was found to reduce the injection barrier at the interface and recover the overall device efficiency with good surface emission characteristics. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.15.Cd Deposition by sputtering
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Organic light-emitting diode with 20 lm/W efficiency using a triphenyldiamine side-group polymer as the hole transport layer

S. E. Shaheen, G. E. Jabbour, B. Kippelen, N. Peyghambarian, J. D. Anderson, S. R. Marder, N. R. Armstrong, E. Bellmann, and R. H. Grubbs

Appl. Phys. Lett. 74, 3212 (1999); http://dx.doi.org/10.1063/1.124108 (3 pages) | Cited 22 times

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We have used triphenyldiamine side-group polymers as hole transport layers in multilayer organic light-emitting diodes using 8-hydroxyquinoline aluminum (Alq3) as an emission layer. The device efficiency systematically increases as the ionization potential of the hole transport layer is shifted further from the work function of the indium–tin–oxide anode. We attribute this trend to better balance of hole and electron charges in the device. An optimized device consisting of a fluorinated version of the polymer as the hole transport layer, quinacridone doped Al as the emission layer, and a LiF/Al cathode results in a peak external luminous efficiency of 20 lm/W. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.61.Ph Polymers; organic compounds

A metal/insulator tunnel transistor with 16 nm channel length

Ryouta Sasajima, Kouji Fujimaru, and Hideki Matsumura

Appl. Phys. Lett. 74, 3215 (1999); http://dx.doi.org/10.1063/1.124109 (3 pages) | Cited 8 times

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A nanometer transistor, metal/insulator tunnel transistor (MITT), which consists of only metal and insulator is experimentally studied. In the MITT, the Fowler–Nordheim tunneling currents through an insulator in lateral metal/insulator/metal structure are controlled by changing a voltage at a gate electrode upon the middle insulator, due to variation of tunnel-barrier thickness at the insulator. It is demonstrated that the MITT with 16 nm channel length fabricated by conventional photolithography can operate similarly to the conventional metal/oxide/semiconductor field-effect transistor with on/off ratio of current larger than 105. The result indicates that the MITT is a promising candidate for future switching transistors in ultralarge scale integrated circuits. © 1999 American Institute of Physics.  
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
73.40.Rw Metal-insulator-metal structures

Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique

S. Hamma and P. Roca i Cabarrocas

Appl. Phys. Lett. 74, 3218 (1999); http://dx.doi.org/10.1063/1.124110 (3 pages) | Cited 15 times

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A method to determine the mobility gap of thin films and the band discontinuities in heterojunctions is presented. It combines in situ contact potential measurements with dark conductivity activation energy measurements. The method is applied to determine the mobility gap of microcrystalline silicon (μc-Si:H) and the band discontinuities at the μc-Si:H/amorphous silicon (a-Si:H) interface. The mobility gap of μc-Si:H depends on its crystalline volume fraction and varies between 1.48 and 1.55 eV. The main band discontinuity occurs at the valence band side. The consequences of the band discontinuities on a-Si:H based solar cells using μc-Si:H doped layers are discussed. © 1999 American Institute of Physics.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
72.20.Ee Mobility edges; hopping transport
73.20.-r Electron states at surfaces and interfaces
84.60.Jt Photoelectric conversion
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
73.40.Cg Contact resistance, contact potential

Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications

B. Boudart, C. Gaquière, S. Trassaert, M. Constant, A. Lorriaux, and N. Lefebvre

Appl. Phys. Lett. 74, 3221 (1999); http://dx.doi.org/10.1063/1.124111 (3 pages) | Cited 4 times

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Effects of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As bulk layers grown on InP substrate have been investigated using Raman spectroscopy. No significant effects induced from the dielectric deposition have been observed in the Al0.48In0.52As material, whatever the thickness and the temperature deposition used in the technological process. On the contrary, slight modifications of the Raman spectra have been noticed for n+ Ga0.47In0.53As samples passivated at 300 °C. The observed differences have been interpreted as a surface potential decrease of 0.15 V and correlated to electrical measurements made on InP-based high electron mobility transistors. In this case, an increase of the maximum drain current has been observed in agreement with the surface potential change deduced from Raman experiments. © 1999 American Institute of Physics.
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81.65.Rv Passivation
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices
78.66.Fd III-V semiconductors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
78.30.Fs III-V and II-VI semiconductors
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