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24 May 1999

Volume 74, Issue 21, pp. 3081-3230

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Erratum: “Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers” [Appl. Phys. Lett. 74, 1153 (1999)]

Kenji Uchida, Tao Yang, Shigeo Goto, Tomoyoshi Mishima, Atsuko Niwa, and Jun Gotoh

Appl. Phys. Lett. 74, 3230 (1999); http://dx.doi.org/10.1063/1.124114 (1 page)

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© 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
61.72.uj III-V and II-VI semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
78.60.Hk Cathodoluminescence, ionoluminescence
99.10.Cd Errata
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