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31 May 1999

Volume 74, Issue 22, pp. 3245-3412

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Time-resolved imaging of radiative recombination in 4H–SiC p-i-n diode

A. Galeckas, J. Linnros, and B. Breitholtz

Appl. Phys. Lett. 74, 3398 (1999); http://dx.doi.org/10.1063/1.123363 (3 pages) | Cited 10 times

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The time-resolved imaging of electron-hole recombination radiation from a forward-biased 4H–SiC p-i-n diode is reported. A novel approach of combining gated charge couple device technique with cross-sectional emission microscopy is demonstrated as a fast and informative method for characterization of both 4H–SiC material properties and the overall power device performance. We present the capability of the technique to visualize structural defects, to characterize spatial distribution and dynamics of injected carriers, and to provide effective carrier diffusion and lifetime parameters. From the results of lateral and in-depth imaging of the light emission we conclude that at low currents the injection of holes from the p+ emission is dominant. Furthermore, an effective carrier lifetime of 350 ns in the active n− region and a diffusion length of 15 μm in the substrate are readily obtained. © 1999 American Institute of Physics.
Show PACS
85.30.Kk Junction diodes
85.30.De Semiconductor-device characterization, design, and modeling
78.60.Fi Electroluminescence
78.47.-p Spectroscopy of solid state dynamics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.-y Defects and impurities in crystals; microstructure

AlGaN metal–semiconductor–metal photodiodes

E. Monroy, F. Calle, E. Muñoz, and F. Omnès

Appl. Phys. Lett. 74, 3401 (1999); http://dx.doi.org/10.1063/1.123358 (3 pages) | Cited 50 times

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We report on the fabrication and characterization of AlGaN metal–semiconductor–metal photodiodes with sharp cutoff wavelengths from 365 to 310 nm. The detectors are visible blind, with an ultraviolet/visible contrast of about 4 orders of magnitude. The photocurrent scales linearly with optical power for photon energies both over and below the band gap, supporting the absence of photoconductive gain related to space-charge regions. No persistent photoconductivity effects have been detected. Time response is limited by the RC product of the measurement system, the transit time of the device being far below 10 ns. The normalized noise equivalent power at 28 V bias is lower than 17 pW/Hz1/2 in GaN detectors, and about 24 pW/Hz1/2 in Al0.25Ga0.75N photodiodes. © 1999 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Pw Imaging detectors and sensors
85.60.Dw Photodiodes; phototransistors; photoresistors

High-efficiency p–i–n detectors for the visible spectral range based on ZnSTe–ZnTe superlattices

W. Faschinger, M. Ehinger, T. Schallenberg, and M. Korn

Appl. Phys. Lett. 74, 3404 (1999); http://dx.doi.org/10.1063/1.123359 (3 pages) | Cited 2 times

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We demonstrate that ZnSTe–ZnTe superlattices, which are grown lattice matched on GaAs substrates by molecular-beam epitaxy, are well suited as a material for light detection in the visible spectral range. Due to their type-II band alignment, these superlattices have a small band gap compared to ZnSe and allow light detection for photon energies between 2.1 and 3.2 eV. In combination with ZnMgSSe, the response curve of the diodes shows a strong dependence on the applied reverse bias, so that they can be used as two-color devices. The obtained external quantum efficiencies are as high as 70%, and dark currents as low as 10−12 A/mm2 were obtained. © 1999 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Analysis of the potential distribution in the channel region of a platinum silicided source/drain metal oxide semiconductor field effect transistor

John P. Snyder, C. R. Helms, and Yoshio Nishi

Appl. Phys. Lett. 74, 3407 (1999); http://dx.doi.org/10.1063/1.123360 (3 pages) | Cited 5 times

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An analysis of the effect of the source and drain Schottky diodes on the drain characteristics (Idrain vs Vdrain) of a platinum silicided metal oxide semiconductor field effect transistor is presented. A back to back Schottky diode model is used to explained the “diode like” feature observed in the small Vdrain regime. For two-dimensional device simulations indicate an abrupt voltage drop across the source Schottky diode which can be a significant fraction of the applied drain bias. The resulting virtual source potential (Vsource′, different from the applied source potential Vsource) has been quantified as a function of applied drain bias, temperature, and channel length, based on simulations that have been calibrated with experimentally measured data. The physical basis for Vsource′ is described as the reverse breakdown mechanism of the source Schottky diode and as such is a strong function of source electrode tip sharpness, poly edge to silicide edge gap distance, and temperature. The implications of this effect on device performance is briefly discussed. © 1999 American Institute of Physics.
Show PACS
85.30.Tv Field effect devices
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes
85.30.De Semiconductor-device characterization, design, and modeling
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