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14 Jun 1999

Volume 74, Issue 24, pp. 3595-3737

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Optical studies of electric fields in poly(2-methoxy-5-ethyl (2′-hexyloxy) para-phenylene vinylene) light-emitting diodes

C. Giebeler, S. A. Whitelegg, A. J. Campbell, M. Liess, S. J. Martin, P. A. Lane, D. D. C. Bradley, G. Webster, and P. L. Burn

Appl. Phys. Lett. 74, 3714 (1999); http://dx.doi.org/10.1063/1.123238 (3 pages) | Cited 23 times

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We report electroabsorption studies of poly(2-methoxy-5-ethyl(2′-hexyloxy) para-phenylene vinylene) light-emitting diodes. An electric field develops during operation which opposes the field of the applied bias. The counter field builds up within 5 s of turning on the device, increases in magnitude with the operating voltage, and decays exponentially with a time constant between 15 and 32 s. We attribute the counter field to bulk carrier traps and discuss its relevance to the increase of the turn-on voltage as organic light-emitting diodes degrade. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.20.Jq Electro-optical effects
42.70.Jk Polymers and organics

All-optical reflection modulator using a nonlinear heteronipi structure within an asymmetric Fabry–Perot optical cavity

P. F. Davies, C. C. Phillips, and C. Roberts

Appl. Phys. Lett. 74, 3717 (1999); http://dx.doi.org/10.1063/1.123231 (3 pages) | Cited 2 times

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Reflectivity changes of ∼ 40% and contrast ratios of ∼ 100% are reported at optical excitation densities less than 100 μW/cm2 in an AlAs/AlGaAs/GaAs reflection-mode optical modulator. Switching and in-plane transport dynamics as a function of pixel size are also reported. Optical modulation occurs via the quantum-confined Stark effect in GaAs quantum wells grown within a “nipi” doping superlattice and is controlled through microcavity étalon effects. Optical bistability without the need for external electronic biasing circuitry is projected. © 1999 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects

A vertical injection blue light emitting diode in substrate separated InGaN heterostructures

Y.-K. Song, M. Diagne, H. Zhou, A. V. Nurmikko, C. Carter-Coman, R. S. Kern, F. A. Kish, and M. R. Krames

Appl. Phys. Lett. 74, 3720 (1999); http://dx.doi.org/10.1063/1.123232 (3 pages) | Cited 26 times

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A vertical injection, light emitting InGaN quantum well diode has been demonstrated by separating the nitride heterostructure from its sapphire substrate by ultraviolet laser photoablation within a process scheme that allows transferring the devices to a host substrate. The incorporation of a dielectric multilayer stack to the device is shown to be a first practical step towards a resonant cavity light emitting diode. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Nonsteady-state photo-EMF effect in photorefractive polymers

Reinhard Bittner, Klaus Meerholz, and Serguei Stepanov

Appl. Phys. Lett. 74, 3723 (1999); http://dx.doi.org/10.1063/1.123233 (3 pages) | Cited 6 times

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The nonsteady-state photo-electromotive force (photo-EMF) effect has been observed in photorefractive (PR) polymer films based on poly(N-vinylcarbazole) (PVK). It was investigated in the typical tilted transmission configuration without and with application of moderate external direct current (dc) electric fields. The dependencies of the photo-EMF signals on the frequency and the amplitude of the phase modulation, the tilt angle, and the externally applied dc field are qualitatively explained using a simple model of the effect, developed earlier for unipolar photoconductive inorganic crystals without saturation of the trapping centers. The absolute value of the photo-EMF signal was two to three times larger than expected from this model and the experimental data on conventional photoconductivity of the polymer film. This was rationalized considering the presence of additional space-charge gratings appearing due to light reflectance from the rear surface of the thin-film device. © 1999 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
73.61.Ph Polymers; organic compounds
42.70.Jk Polymers and organics
42.70.Gi Light-sensitive materials
73.50.Pz Photoconduction and photovoltaic effects
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