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14 Jun 1999

Volume 74, Issue 24, pp. 3595-3737

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Modal expansion analysis of strained photonic lattices based on vertical cavity surface emitting laser arrays

Tal Fishman, Eli Kapon, Harald Pier, and Amos Hardy

Appl. Phys. Lett. 74, 3595 (1999); http://dx.doi.org/10.1063/1.123192 (3 pages) | Cited 5 times

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The optical modes of lasing photonic lattices incorporating alternating-shear strain were analyzed using a background-resonator mode expansion model. The model correctly explains the observed locking of the photon mode near fields to square or hexagonal-like lattice patterns for subcritical strain values, as well as the abrupt switching between the two mode patterns. Control of the optical mode switching point by adjusting the lattice reflectivity is proposed and analyzed. © 1999 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
42.55.Px Semiconductor lasers; laser diodes

Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes

T. Takamori, A. R. Pratt, and T. Kamijoh

Appl. Phys. Lett. 74, 3598 (1999); http://dx.doi.org/10.1063/1.123193 (3 pages) | Cited 5 times

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We report a systematic investigation of the emission properties of semiconductor microcavity light-emitting diodes (MC-LEDs) with different cavity detuning. Evidence that varying the cavity detuning leads to temperature insensitive output characteristics is provided by changes in the temperature dependence of the slope efficiency extracted from the light output versus current characteristics. For resonantly tuned devices the slope efficiency decreases monotonically with increasing temperature. However when the cavity peak is detuned to long wavelength with respect to the room temperature quantum well (QW) emission, temperature insensitive characteristics are achieved. Compared to a noncavity type LED, enhanced efficiency and narrow spectral linewidth have been observed for the MC-LEDs with the highest output efficiency achieved when the QW emission and cavity peak are exact resonant. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors

Wavelength shifting of optical pulses in a polydiacetylene waveguide

Daniela Grando, Stefano Sottini, Gian Piero Banfi, Davide Fortusini, and Monica LoPapa

Appl. Phys. Lett. 74, 3601 (1999); http://dx.doi.org/10.1063/1.123194 (3 pages) | Cited 2 times

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We characterize the process of wavelength shifting (generation of a pulse at the wavelength λp−Δ from a signal at λp+Δ under the action of a pump at λp) in a planar waveguide of poly (3BCMU) for short. With a propagation length of 4.5 mm, pulses of 20 ps time duration, and λ′ s around 1.3 μm, we observe wavelength conversion with 1% efficiency when the energy of the pump pulse per unit width is about 10−5 J/m. © 1999 American Institute of Physics.
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42.65.Wi Nonlinear waveguides
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.70.Jk Polymers and organics
42.79.Nv Optical frequency converters
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

Noncontact continuous wavefront/diffractive acoustic elements for Rayleigh wave control

M. Clark, S. D. Sharples, and M. G. Somekh

Appl. Phys. Lett. 74, 3604 (1999); http://dx.doi.org/10.1063/1.123195 (3 pages) | Cited 3 times

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A laser is used to excite Rayleigh waves on a sample. The optical distribution of the laser energy as it strikes the sample is controlled using a computer generated hologram—this optical distribution determines the initial acoustic wavefront and hence the acoustic amplitude distribution. In this letter, we present two designs of acoustic elements which use diffraction of the Rayleigh waves as a means of controlling the acoustic amplitude distribution. © 1999 American Institute of Physics.
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43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
68.35.Gy Mechanical properties; surface strains
43.20.El Reflection, refraction, diffraction of acoustic waves
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography

Thermally induced threefold upconversion emission enhancement in nonresonant excited Er3+/Yb3+-codoped chalcogenide glass

P. V. dos Santos, E. A. Gouveia, M. T. de Araujo, A. S. Gouveia-Neto, A. S. B. Sombra, and J. A. Medeiros Neto

Appl. Phys. Lett. 74, 3607 (1999); http://dx.doi.org/10.1063/1.123196 (3 pages) | Cited 36 times

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Thermally induced threefold infrared-to-visible upconversion emission enhancement in Er3+/Yb3+-codoped Ga2S3:La2O3 chalcogenide glasses excited at 1.064 μm is reported. The times three upconversion efficiency enhancement was achieved by heating the sample in the temperature range of 23–155 °C, and is assigned to the temperature-dependent multiphonon-assisted anti-Stokes sideband excitation process of the ytterbium sensitizer. A theoretical analysis based upon rate equations considering the sensitizer absorption cross section as a function of the phonon occupation number in the host material exhibited very good agreement with experimental data. © 1999 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
63.50.-x Vibrational states in disordered systems

High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy

R. Langer, A. Barski, J. Simon, N. T. Pelekanos, O. Konovalov, R. André, and Le Si Dang

Appl. Phys. Lett. 74, 3610 (1999); http://dx.doi.org/10.1063/1.123197 (3 pages) | Cited 35 times

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Highly-reflective GaN/GaAlN quarter-wave Bragg mirrors, designed to be centered at blue/green wavelengths, have been grown by molecular beam epitaxy. The reflectivity for a mirror centered at 473 nm was as high as 93% and the bandwidth reached 22 nm. Detailed x-ray diffraction measurements allowed us to characterize the structural parameters of the Bragg mirrors. We show that, in spite of substantial strain relaxation occurring in our samples, high reflectivity is still possible. In addition, we show that growth interruption at the heterointerfaces is crucial for achieving high reflectivities. © 1999 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Multicolor multilayer light-emitting devices based on pyridine-containing conjugated polymers and para-sexiphenyl oligomer

Y. Z. Wang, R. G. Sun, F. Meghdadi, G. Leising, and A. J. Epstein

Appl. Phys. Lett. 74, 3613 (1999); http://dx.doi.org/10.1063/1.123198 (3 pages) | Cited 43 times

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There is increased interest in developing multicolor light-emitting devices. We report here the fabrication and study of multilayer color-variable/white light-emitting devices based on pyridine-containing conjugated polymers and para-sexiphenyl (6P) oligomer. Voltage-dependent multicolor emission was observed in both bilayer and trilayer configurations. The emission colors of single devices cover a wide range of visible spectra whose Commission International de I’Eclairage (CIE) color coordinates vary from blue to white to green with increasing voltages. The color coordinate traverses along a straight line in the CIE chromaticity diagram. The role of interfaces in the operation of devices is discussed. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices

GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

N. Grandjean, J. Massies, S. Dalmasso, P. Vennéguès, L. Siozade, and L. Hirsch

Appl. Phys. Lett. 74, 3616 (1999); http://dx.doi.org/10.1063/1.123199 (3 pages) | Cited 21 times

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GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (∼50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5×GaInN (25 Å)/GaN (35 Å) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.60.Fi Electroluminescence

Passive Q-switching of fiber lasers using a broadband liquefying gallium mirror

P. Petropoulos, H. L. Offerhaus, D. J. Richardson, S. Dhanjal, and N. I. Zheludev

Appl. Phys. Lett. 74, 3619 (1999); http://dx.doi.org/10.1063/1.123200 (3 pages) | Cited 20 times

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Using a nonlinear cavity element, a liquefying gallium mirror, we demonstrate stable, self-starting, passive Q-switching of both erbium and ytterbium fiber laser cavities operating at wavelengths of 1550 and 1030 nm, respectively. The performance at 1550 nm is shown to be equivalent to that achieved with a state of the art semiconductor saturable absorber designed to work at this wavelength. The results highlight the suitability of this tremendously broadband, inexpensive nonlinear medium for a wide range of passive Q-switch applications. © 1999 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Wd Fiber lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Bh Lenses, prisms and mirrors

High-repetition-rate, high-average-power, mode-locked Ti:sapphire laser with an intracavity continuous-wave amplification scheme

Zhenlin Liu, Shinji Izumida, Shingo Ono, Hideyuki Ohtake, and Nobuhiko Sarukura

Appl. Phys. Lett. 74, 3622 (1999); http://dx.doi.org/10.1063/1.123201 (2 pages) | Cited 5 times

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We have demonstrated a high-average-power, mode-locked Ti:sapphire laser with an intracavity continuous-wave amplification scheme. The laser generated 150 fs pulses with 3.4 W average power at a repetition rate of 79 MHz. This simple amplification scheme can be applied for the power scaling of other lasers. © 1999 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
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