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14 Jun 1999

Volume 74, Issue 24, pp. 3595-3737

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B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Lourdes Pelaz, G. H. Gilmer, H.-J. Gossmann, C. S. Rafferty, M. Jaraiz, and J. Barbolla

Appl. Phys. Lett. 74, 3657 (1999); http://dx.doi.org/10.1063/1.123213 (3 pages) | Cited 84 times

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A comprehensive model of the nucleation, growth, and dissolution of B clusters in Si is presented. We analyze the activation of B in implanted Si on the basis of detailed interactions between B and defects in Si. In the model, the nucleation of B clusters requires a high interstitial supersaturation, which occurs in the damaged region during implantation and at the early stages of the postimplant anneal. B clusters grow by adding interstitial B to preexisting B clusters, resulting in B complexes with a high interstitial content. As the annealing proceeds and the Si interstitial supersaturation decreases, the B clusters emit Si interstitials, leaving small stable B complexes with low interstitial content. The total dissolution of B clusters involves thermally generated Si interstitials, and it is only achieved at very high temperatures or long anneal times. © 1999 American Institute of Physics.
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64.75.-g Phase equilibria
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.uf Ge and Si
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing

Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

P. Waltereit, O. Brandt, A. Trampert, M. Ramsteiner, M. Reiche, M. Qi, and K. H. Ploog

Appl. Phys. Lett. 74, 3660 (1999); http://dx.doi.org/10.1063/1.123214 (3 pages) | Cited 42 times

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We study the growth mode and strain state of GaN layers grown either directly on 6H–SiC(0001) or on thin (5 nm), coherently strained AlN nucleation layers. Using a combination of structural, optical, and vibrational characterization methods, we show that the 3.4% compressive lattice mismatch strain is fully relieved in the former case, whereas in the latter case a significant amount (0.3%) remains even after 1 μm of growth. This finding is clarified by in situ reflection high-energy electron diffraction and transmission electron microscopy. We demonstrate that the strain state of the GaN layer is determined by its growth mode, which in turn is governed by the degree of wetting of the underlayer rather than by lattice mismatch. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

ZnSe/GaAs interface state probed by time-resolved reflectance difference spectroscopy

K. S. Wong, H. Wang, Z. Yang, I. K. Sou, and G. K. L. Wong

Appl. Phys. Lett. 74, 3663 (1999); http://dx.doi.org/10.1063/1.123215 (3 pages) | Cited 2 times

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Time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of the 2.7 eV ZnSe/GaAs interface state associated with Zn–As bonds. The instantaneous screening due to the photoexcited carriers and ∼18 ps recovery time of the 2.7 eV interface state is observed in the TRDS spectra. The rapid cooling of the hot carrier in the spectral region above the ZnSe band edge is also observed. © 1999 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
78.47.-p Spectroscopy of solid state dynamics
78.66.Hf II-VI semiconductors
78.40.Fy Semiconductors
78.66.Fd III-V semiconductors

Prediction of room-temperature high-thermoelectric performance in n-type La(Ru1−xRhx)4Sb12

Marco Fornari and David J. Singh

Appl. Phys. Lett. 74, 3666 (1999); http://dx.doi.org/10.1063/1.124220 (3 pages) | Cited 7 times

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First-principles calculations are used to investigate the band structure and the transport-related properties of unfilled and filled 4d skutterudite antimonides. The calculations show that, while RhSb3 and p-type La(Rh,Ru)4Sb12 are unfavorable for thermoelectric application, n-type La(Rh,Ru)4Sb12 is very likely a high figure-of-merit thermoelectric material in the important temperature range 150–300 K. © 1999 American Institute of Physics.
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72.15.Jf Thermoelectric and thermomagnetic effects
71.20.Eh Rare earth metals and alloys

Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds

M. M. G. de Carvalho, J. Betinni, M. A. A Pudenzi, L. P. Cardoso, and M. A. Cotta

Appl. Phys. Lett. 74, 3669 (1999); http://dx.doi.org/10.1063/1.123216 (3 pages) | Cited 4 times

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In this work, we present evidence that Be3P2 microcrystals are formed in Be-doped phosphorus-based semiconductor compounds grown by chemical beam epitaxy. Our results suggest that microcrystal formation occurs when high Be concentrations (>1018 cm−3) and temperatures higher than 500 °C are used for crystal growth. The main consequence of Be3P2 formation is a high phosphorus consumption close to these microcrystals that causes a large density of P vacancies in the semiconductor layer. This results in reduced electrical mobility, lattice parameter reduction, and poor crystalinity of the film in general. © 1999 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors
81.05.Ea III-V semiconductors
61.72.J- Point defects and defect clusters
72.20.Fr Low-field transport and mobility; piezoresistance
73.50.Dn Low-field transport and mobility; piezoresistance
68.35.Fx Diffusion; interface formation

Electrical simulation of scanning capacitance microscopy imaging of the pn junction with semiconductor probe tips

M. L. O’Malley, G. L. Timp, W. Timp, S. V. Moccio, J. P. Garno, and R. N. Kleiman

Appl. Phys. Lett. 74, 3672 (1999); http://dx.doi.org/10.1063/1.123217 (3 pages) | Cited 13 times

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Scanning capacitance microscopy (SCM) enables the imaging of the two-dimensional carrier profiles of small transistors. Initial imaging utilized metal-coated probe tips but the limited resolution achievable with these tips due to their size led us to investigate micromachined silicon tips with a smaller tip diameter. Electrical simulations of a pn junction structure probed with semiconducting tips indicate that image improvements result from the semiconductor nature of the silicon tips as well as from the smaller tip size. The tip becomes active in the imaging process as the capacitance–voltage responses of the tip and sample interact to improve image contrast and decrease the Vbias dependence of the pn junction locations. SCM images of a 60 nm gate length n-metal–oxide–semiconductor device, obtained using a boron-doped silicon tip, demonstrate these effects. © 1999 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
07.79.-v Scanning probe microscopes and components
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Formation of double-monolayer-height islands on a Si(001) surface by alternating current heating in molecular beam epitaxy

Takahisa Doi, Masakazu Ichikawa, Shigeyuki Hosoki, and Hiroshi Kakibayashi

Appl. Phys. Lett. 74, 3675 (1999); http://dx.doi.org/10.1063/1.123218 (3 pages) | Cited 1 time

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Molecular beam epitaxy (MBE) of Si atoms onto a Si(001) 1×2 surface is investigated using reflection electron microscopy. A 1×2 surface with wide 1×2 and narrow 2×1 terraces is prepared by passing a direct current from the down side to the up side at the surface steps. After sample heating to 900 °C using an alternating current without deposited Si atoms, the 1×2 surface changes to a double-domain surface, where the width of the 2×1 terraces is approximately equal to that of the 1×2 terraces. With MBE, however, the 1×2 surface remains the 1×2 surface, and the double-monolayer-height islands with an approximately circular shape are stably formed on it. © 1999 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
68.35.Rh Phase transitions and critical phenomena
81.40.Gh Other heat and thermomechanical treatments

X-ray diffraction study of chalcopyrite ordering in epitaxial ZnSnP2 grown on GaAs

S. Francoeur, G. A. Seryogin, S. A. Nikishin, and H. Temkin

Appl. Phys. Lett. 74, 3678 (1999); http://dx.doi.org/10.1063/1.123219 (3 pages) | Cited 8 times

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We report on the structural characterization of epitaxial ZnSnP2 grown on GaAs (001). Ordering of Zn and Sn atoms in the cation sublattice is observed by high-resolution x-ray diffraction. By varying the growth conditions, samples with two distinct structures were obtained: one showing chalcopyrite ordering with the tetragonal axis oriented along the growth direction and the other showing no evidence of ordering. Chalcopyrite ordering was determined unambiguously by observing several characteristic reflections uniquely identifying this structure. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
64.70.K- Solid-solid transitions

Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices

Peter Kozodoy, Monica Hansen, Steven P. DenBaars, and Umesh K. Mishra

Appl. Phys. Lett. 74, 3681 (1999); http://dx.doi.org/10.1063/1.123220 (3 pages) | Cited 92 times

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High p-type conductivity of Mg-doped AlGaN/GaN superlattices is demonstrated. The measured hole concentration at room temperature is over 2.5×1018 cm−3, more than ten times that obtained in bulk AlGaN layers, and lateral resistivity as low as 0.2 Ω cm is realized. The temperature dependence of the resistivity is drastically reduced compared to bulk films, providing evidence of the formation of a confined hole gas. Valence band bending due primarily to piezoelectric and spontaneous polarization is identified as the origin of these effects. © 1999 American Institute of Physics.
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61.72.uj III-V and II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
77.65.-j Piezoelectricity and electromechanical effects
77.22.Ej Polarization and depolarization

Electrical and noise properties of thin-film transistors on very thin excimer laser annealed polycrystalline silicon films

C. T. Angelis, C. A. Dimitriadis, F. V. Farmakis, G. Kamarinos, J. Brini, and M. Miyasaka

Appl. Phys. Lett. 74, 3684 (1999); http://dx.doi.org/10.1063/1.123221 (3 pages) | Cited 2 times

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Thin-film transistors, fabricated on polycrystalline silicon films prepared by combined solid phase crystallization of amorphous silicon and excimer laser annealing processes, have been investigated by electrical and low frequency noise measurements in relation to the active layer thickness and the laser energy density. The device performance is improved with increasing the laser energy density until a critical value where the film is completely melted. By decreasing the active layer thickness from 50 to 25 nm, although the subthreshold characteristics are improved, the electron mobility and the threshold voltage are degraded. The noise data indicate that the degradation is related to electron trapping in both gate and substrate oxide interface traps. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.20.Ee Mobility edges; hopping transport
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Gh Other heat and thermomechanical treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors

Analysis of contamination, hydrogen emission, and surface temperature variations using real time spectroscopic ellipsometry during p/i interface formation in amorphous silicon p-i-n solar cells

H. Fujiwara, Joohyun Koh, C. R. Wronski, and R. W. Collins

Appl. Phys. Lett. 74, 3687 (1999); http://dx.doi.org/10.1063/1.123230 (3 pages) | Cited 5 times

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The formation of p/i interfaces in hydrogenated amorphous silicon p-i-n solar cells prepared by plasma-enhanced chemical vapor deposition has been studied in detail using real time spectroscopic ellipsometry. With this technique, three effects have been successfully separated and quantified: (i) contaminant layer deposition at the p-layer surface with a sensitivity of ±0.1 Å, (ii) thermal emission of bonded hydrogen from the p layer with a sensitivity of ±0.1 at. % (±2 meV in optical gap), and (iii) surface temperature variations with a sensitivity of ±1 °C. The separation of these competing effects has yielded a better understanding of p/i interface formation and device optimization. © 1999 American Institute of Physics.
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84.60.Jt Photoelectric conversion
68.35.Dv Composition, segregation; defects and impurities
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.35.Ct Interface structure and roughness
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Db Elemental semiconductors and insulators
81.05.Cy Elemental semiconductors
78.66.Jg Amorphous semiconductors; glasses
81.05.Gc Amorphous semiconductors
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