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28 Jun 1999

Volume 74, Issue 26, pp. 3921-4070

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Ternary single electron tunneling phase logic element

F. Y. Liu, F.-T. An, and R. A. Kiehl

Appl. Phys. Lett. 74, 4040 (1999); http://dx.doi.org/10.1063/1.123254 (3 pages) | Cited 2 times

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An analysis of a ternary single electron tunneling phase logic element is presented. The analysis is based on Monte Carlo simulations and an analytical treatment of a resistively loaded tunneling junction at low temperatures. We show that tristable operation can be obtained over a 19% dc bias operating range by optimizing the pump frequency and amplitude. For large ac frequencies, our optimizations also show that simple linear relationships exist between the optimal parameters (the optimal dc bias and pump amplitude) and frequency. Finally, we show that the ternary phase state of a clocked element can be controlled by an input signal provided that the clock turn-on is not too abrupt. The results should be of use in the design of ternary and other multilevel tunneling phase logic families. © 1999 American Institute of Physics.
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85.25.Hv Superconducting logic elements and memory devices; microelectronic circuits
84.30.Sk Pulse and digital circuits
02.70.Rr General statistical methods
85.25.Am Superconducting device characterization, design, and modeling

Superconducting multiplexer for arrays of transition edge sensors

J. A. Chervenak, K. D. Irwin, E. N. Grossman, John M. Martinis, C. D. Reintsema, and M. E. Huber

Appl. Phys. Lett. 74, 4043 (1999); http://dx.doi.org/10.1063/1.123255 (3 pages) | Cited 72 times

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We report the design and testing of an analog superconducting time-division multiplexer to instrument large format arrays of low-temperature bolometers and microcalorimeters. The circuit is designed to multiplex an array of superconducting quantum interference devices, thereby simplifying wiring and room temperature electronics. We have fabricated a prototype 8×1 multiplexer chip and show a switching rate of 1 MHz. We calculate that a 32×32 array or larger is feasible. © 1999 American Institute of Physics.
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85.25.Am Superconducting device characterization, design, and modeling
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Selective H atom sensors using ultrathin Ag/Si Schottky diodes

Hermann Nienhaus, Howard S. Bergh, Brian Gergen, Arun Majumdar, W. Henry Weinberg, and Eric W. McFarland

Appl. Phys. Lett. 74, 4046 (1999); http://dx.doi.org/10.1063/1.123256 (3 pages) | Cited 21 times

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Schottky diodes with ultrathin silver films on n-Si(111) are used for selective detection of atomic hydrogen. The exothermic adsorption of H atoms on the Ag surface creates hot electrons which may travel ballistically through the metal film and traverse the Schottky barrier. The chemically induced current is measurable ( ≈ 0.001 electrons/H atom) as a chemicurrent. After saturation of the adsorption sites, this chemicurrent achieves a steady-state value due to a balance of removal of adsorbed hydrogen and readsorption. The detection limit of the sensors is approximately 1010 H atoms cm−2 s−1. The detectors are completely insensitive to H2 molecules. © 1999 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
85.30.Hi Surface barrier, boundary, and point contact devices

Nanooxidation of silicon with an atomic force microscope: A pulsed voltage technique

B. Legrand and D. Stievenard

Appl. Phys. Lett. 74, 4049 (1999); http://dx.doi.org/10.1063/1.123257 (3 pages) | Cited 44 times

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The use of an atomic force microscope (AFM) as an active tool to realize silicon nanolithography is now well known, using a continuous voltage applied between the AFM tip and the surface. The main drawback of this technique is the poor reliability of the tip due to the strong tip-surface interaction. An original way which both increases the reliability and improves the nanolithography resolution is the use of pulsed voltages instead of continuous polarization. In such a case, the interaction time of the tip with the surface under electric field decreases. The frequency oscillation (in noncontact mode) of the cantilever is taken as a reference, and pulsed voltages with variable phase and duty cycle are used. We show that the variation of the phase allows a 100% modulation of the oxide width. Finally, combining this lithography technique with wet etching, a 17.5 nm wide and 5.5 nm height nanowire has been obtained starting from a silicon-on-insulator substrate. © 1999 American Institute of Physics.
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81.65.Mq Oxidation
81.05.Cy Elemental semiconductors
07.79.Lh Atomic force microscopes

Charge sensitivity of radio frequency single-electron transistor

Alexander N. Korotkov and Mikko A. Paalanen

Appl. Phys. Lett. 74, 4052 (1999); http://dx.doi.org/10.1063/1.123258 (3 pages) | Cited 31 times

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A theoretical analysis of the charge sensitivity of the radio frequency single-electron transistor (rf-SET) is presented. We use the “orthodox” approach and consider the case when the carrier frequency is much less than I/e where I is the typical current through rf-SET. The optimized noise-limited sensitivity is determined by the temperature T, and at low T it is only 1.4 times worse than the sensitivity of conventional single-electron transistor. © 1999 American Institute of Physics.
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85.35.Gv Single electron devices
85.25.Am Superconducting device characterization, design, and modeling
85.30.De Semiconductor-device characterization, design, and modeling

Light invariant, efficient, multiple band gap AlGaAs/Si/metal hydride solar cell

S. Licht, B. Wang, T. Soga, and M. Umeno

Appl. Phys. Lett. 74, 4055 (1999); http://dx.doi.org/10.1063/1.123259 (3 pages) | Cited 7 times

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Electronic and ionic charge transfer provides a basis for composite semiconductor/electrolyte systems featuring simultaneous solar/electrical conversion and solar energy storage. This cell contains both multiple band gap and electrochemical storage, and provides a nearly constant energetic output in illuminated or dark conditions. Multiple semiconductor band gaps can enhance the energetics of this interaction. The cell combines bipolar AlGaAs (Eg = 1.6 eV) and Si (Eg = 1.1 eV) and AB5 metal hydride/NiOOH storage, and generates a light variation insensitive potential of 1.2–1.3 V at total (including storage losses) solar/electrical energy conversion efficiency of 18.1%. © 1999 American Institute of Physics.
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84.60.Jt Photoelectric conversion
73.40.Mr Semiconductor-electrolyte contacts
82.47.-a Applied electrochemistry

Molecular-beam epitaxial regrowth on oxygen-implanted GaAs substrates for device integration

C. L. Chen, L. J. Mahoney, S. D. Calawa, K. M. Molvar, P. A. Maki, R. H. Mathews, J. P. Sage, and T. C. L. G. Sollner

Appl. Phys. Lett. 74, 4058 (1999); http://dx.doi.org/10.1063/1.123260 (3 pages)

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Device-quality layers were regrown on GaAs wafers by molecular-beam epitaxy over conductive pregrown areas and on selectively patterned high-resistivity areas formed by oxygen implantation. The regrowth over both areas resulted in comparable device-quality GaAs. The high resistivity of the oxygen-implanted area was maintained after the regrowth and no oxygen incorporation was observed in the regrown layer. The cutoff frequency of a 1.5-μm-gate metal-semiconductor field-effect transistor fabricated on the regrown layer over the high-resistivity areas is 7 GHz. This demonstration shows that planar technology can be used in epitaxial regrowth, simplifying the integration of vastly different devices into monolithic circuits. © 1999 American Institute of Physics.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors
85.40.Ry Impurity doping, diffusion and ion implantation technology
85.30.Tv Field effect devices
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