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28 Jun 1999

Volume 74, Issue 26, pp. 3921-4070

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Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor

K. Wittmaack, J. J. Lee, and S. B. Patel

Appl. Phys. Lett. 74, 3969 (1999); http://dx.doi.org/10.1063/1.124239 (3 pages) | Cited 5 times

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A simple method is described for calibrating the dose of impurity depth profiles in Si, SiO2, and SiO2 on Si by secondary ion mass spectrometry (SIMS). Use is made of the fact that, with normally incident O2+ beams, the ionization probabilities of impurity and matrix secondary ions as well as the partial Si sputtering yields are the same for Si and SiO2. This allows dose calibration against a reference sample to be achieved for any sequence of layers of the two materials and without depth calibration. SIMS profiles of 5 keV 11B equal-dose implants in Si, SiO2, and a thin layer of SiO2 on Si show that the concept is valid to ±1% or better. Differences in the reflection coefficient of 11B from the different targets could be identified clearly. © 1999 American Institute of Physics.
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61.72.S- Impurities in crystals
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.uf Ge and Si
81.05.Cy Elemental semiconductors

An efficient way to improve compositional abruptness at the GaAs on GaInAs interface

E. Chirlias, J. Massies, J. L. Guyaux, H. Moisan, and J. Ch. Garcia

Appl. Phys. Lett. 74, 3972 (1999); http://dx.doi.org/10.1063/1.124240 (3 pages) | Cited 5 times

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Indium surface segregation during the growth of Ga1−xInxAs by chemical beam epitaxy is evidenced in real time by reflection high-energy electron diffraction. An efficient way to suppress the compositional broadening of GaAs on the GaInAs interface resulting from the In segregation effect is proposed. It consists in using the chemical reaction of AsCl3 molecules at the surface, which is shown to etch layer by layer the Ga1−xInxAs alloy. Monolayer etching precision is thus obtained and used to eliminate the In accumulation at the GaInAs surface and the related interface broadening. © 1999 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
81.65.Cf Surface cleaning, etching, patterning
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Ea III-V semiconductors

Effect of dangling-bond density on luminescence in tritiated amorphous silicon

Lakhbeer S. Sidhu, Tome Kosteski, Stefan Zukotynski, Nazir P. Kherani, and Walter T. Shmayda

Appl. Phys. Lett. 74, 3975 (1999); http://dx.doi.org/10.1063/1.124241 (3 pages) | Cited 7 times

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Self-luminescence in tritiated amorphous silicon is observed. The substitution of tritium for hydrogen in a hydrogenated semiconductor provides a powerful tool for the study of dangling bonds. The radioactive decay of tritium leads to an increase in the dangling-bond concentration in the material of several orders of magnitude over a period of a few weeks with little other modification in the structure of the material. We report here results of a study of photoluminescence as a function of time in tritiated amorphous silicon. An analysis of the data in terms of a simple theoretical model in which dangling bonds are treated as nonradiative recombination centers yields a capture radius of 32 Å for the D0 defect. © 1999 American Institute of Physics.
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78.55.Ap Elemental semiconductors
78.66.Jg Amorphous semiconductors; glasses
78.66.Db Elemental semiconductors and insulators
71.55.Jv Disordered structures; amorphous and glassy solids
78.47.-p Spectroscopy of solid state dynamics

Raman spectroscopy for characterizing compositional intermixing in GaAs/AlGaAs heterostructures

A. Saher Helmy, A. C. Bryce, C. N. Ironside, J. S. Aitchison, and J. H. Marsh

Appl. Phys. Lett. 74, 3978 (1999); http://dx.doi.org/10.1063/1.124242 (3 pages) | Cited 8 times

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Compositional intermixing induced by the process of impurity-free vacancy (dielectric cap annealing induced) disordering in GaAs/AlGaAs is studied using Raman spectroscopy. The degree of intermixing in multiple-quantum-well structures was detected through the energy shift of certain Raman modes of the lattices. In addition, localized intermixing, with band-gap shifts as low as 6 nm realized in 1:1 band-gap grating patterns with different periods (⩾4 μm), was also detected through the energy shift and the full width at half maximum of the structures’s Raman modes. © 1999 American Institute of Physics.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

N. Wieser, O. Ambacher, H.-P. Felsl, L. Görgens, and M. Stutzmann

Appl. Phys. Lett. 74, 3981 (1999); http://dx.doi.org/10.1063/1.124243 (3 pages) | Cited 18 times

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We report on compositional fluctuations in GaN/GaInN/GaN double heterostructures investigated by photoluminescence excitation and resonant Raman spectroscopy. The energy and line-shape of both luminescence and longitudinal optical (LO) phonon Raman peaks strongly depend on excitation energy due to selective excitation of regions with different In content. For a given excitation energy, luminescence from In-rich regions takes place and in addition, with increasing sample temperature, resonantly excited luminescence from regions of lower In content is superposed. Thus, the luminescence strongly broadens and on average shifts to higher energies with increasing temperature. The spectral variation of the photoluminescence and Raman cross sections is determined and correlated with the GaInN absorbance as measured by photothermal deflection spectroscopy. © 1999 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Nq Composition and phase identification
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Molecular beam epitaxial growth and optical properties of lattice-matched MgxZn1−xSeyTe1−y alloys on InP substrates

Koichi Naniwae, Hiroshi Iwata, and Kenichiro Yashiki

Appl. Phys. Lett. 74, 3984 (1999); http://dx.doi.org/10.1063/1.124244 (3 pages) | Cited 4 times

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Molecular beam epitaxial growth and the optical properties of lattice-matched MgxZn1−xSeyTe1−y alloys on InP were investigated. Two-dimensional growth and high crystalline quality were achieved by forming an InP buffer layer and a Zn0.48Cd0.52Se buffer layer before the MgxZn1−xSeyTe1−y layer growth. The band-gap energy (Eg) of the MgxZn1−xSeyTe1−y films, measured by optical-reflection measurements, increased with the Mg content and is expressed by the quadratic equation Eg = 0.90x2+0.83x+2.37. We found that the Stokes shifts of MgxZn1−xSeyTe1−y quaternary alloys, which seemed to originate from deep trap levels related to Te clusters, were larger than those of ZnSeTe ternary alloys. The refractive index of MgxZn1−xSeyTe1−y at a wavelength of 600 nm decreased as the Mg content rose, as expressed by the linear equation n600(x) = −1.09x+2.99. © 1999 American Institute of Physics.
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81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Negative photoconductivity in SiO2 films containing Si nanocrystals

Suk-Ho Choi and R. G. Elliman

Appl. Phys. Lett. 74, 3987 (1999); http://dx.doi.org/10.1063/1.124245 (3 pages) | Cited 12 times

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Negative photoconductivity is reported in metal–insulator–semiconductor structures containing Si nanocrystals produced by ion implantation and annealing. Under forward bias, the current is reduced when the sample is illuminated with ultraviolet light whilst under reverse bias it is increased. No such change is observed in structures that have not been ion implanted. This effect is explained by charging of nanocrystals in the oxide layer by photoionization of electrons. The positively charged nanocrystals screen the applied bias voltage leading to a reduction in current at a given voltage. This effect, if larger than the current increase caused by the photoexcitation of carriers in the accumulation layer, gives rise to the observed negative photoconductivity. © 1999 American Institute of Physics.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Ng Insulators
81.07.-b Nanoscale materials and structures: fabrication and characterization
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Channeling implantations of Al+ into 6H silicon carbide

E. Morvan, P. Godignon, M. Vellvehi, A. Hallén, M. Linnarsson, and A. Yu. Kuznetsov

Appl. Phys. Lett. 74, 3990 (1999); http://dx.doi.org/10.1063/1.124246 (3 pages) | Cited 5 times

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A strong channeling effect of Al+ ions implanted into crystalline SiC has been observed by Monte Carlo simulations and experiments especially designed to demonstrate this phenomenon have been performed. Depth distributions of implanted Al were measured for on- and controlled off-axis Al implantations using secondary ion mass spectrometry (SIMS). Much deeper and wider profiles are obtained for the on-axis implantations as compared to off-axis implants. For higher doses, the experiment also reveals the growth of an intermediate peak slightly deeper than the random peak. The origin of the intermediate peak can be understood by combining SIMS results with Monte Carlo simulations, which motivates the development of advanced simulation tools for the ion implantation process in SiC. © 1999 American Institute of Physics.
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61.72.up Other materials
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
61.72.S- Impurities in crystals

InxGa1−xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN

Ch. Manz, M. Kunzer, H. Obloh, A. Ramakrishnan, and U. Kaufmann

Appl. Phys. Lett. 74, 3993 (1999); http://dx.doi.org/10.1063/1.124247 (3 pages) | Cited 20 times

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The deep, yellow photoluminescence band well known in GaN has been studied in InxGa1−xN (x ⩽ 0.14) grown pseudomorphically on GaN. The peak energy Ep of the band is found to shift gradually to the red with increasing x according to Ep = 2.20−2.02x (eV). As in the case of GaN, the deep band in InxGa1−xN is assigned to shallow donor-deep acceptor pair recombination. The data show that the deep acceptor level does not follow the valence band edge. It is therefore assumed to be pinned to a reference level common to GaN and InxGa1−xN. The band offsets between GaN and strained InxGa1−xN evaluated under this assumption, are found to be given by ΔEc(x) ≈ 2.02x (eV) and ΔEv(x) ≈ 1.26x (eV) for x⩽0.14. © 1999 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.40.Fy Semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing

E. Schroer, V. Privitera, F. Priolo, E. Napolitani, and A. Carnera

Appl. Phys. Lett. 74, 3996 (1999); http://dx.doi.org/10.1063/1.123239 (3 pages) | Cited 13 times

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We report on the clustering behavior of ultra-low-energy (500 eV) implanted boron in silicon during the postimplantation activation annealing. The broadening of the boron concentration profile is found to be composed of a diffusing and a nondiffusing contribution. The nondiffusing part is attributed to clustered boron. The concentration of boron in clusters is found to be dependent on the annealing temperature and the annealing time. The amount of boron in clusters decreases with increasing annealing time. A dissolution time constant with an average activation energy of 2.3 eV is determined from this behavior. © 1999 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.72.uf Ge and Si

Ln3Au3Sb4: Thermoelectrics with low thermal conductivity

D. Young, K. Mastronardi, P. Khalifah, C.-C. Wang, R. J. Cava, and A. P. Ramirez

Appl. Phys. Lett. 74, 3999 (1999); http://dx.doi.org/10.1063/1.123240 (3 pages) | Cited 3 times

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The thermoelectric properties of intermetallic compounds with the Y3Au3Sb4 structure type, of formula Ln3Au3Sb4 for Ln=Gd, Nd, Ho, and Sm, are reported. The highest Seebeck coefficients are on the order of 100–200 μV/K, indicating that the dominant carriers are holes, and increase with increasing temperature. Variation of the Au:Sb ratio significantly affects the resistivities and Seebeck coefficients. Materials with mixtures of lanthanides on the large atom site show improved Seebeck coefficients without degradation of the electrical resistivity. The thermal conductivities are very low, even for the stoichiometric materials, and decrease in materials with mixed lanthanides. Band-structure calculations show a complex multivalley character for both valence and conduction bands. © 1999 American Institute of Physics.
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72.15.Jf Thermoelectric and thermomagnetic effects
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
81.05.Bx Metals, semimetals, and alloys

Acoustic field mapping on GaAs using microscopic reflectance and reflectance anisotropy

Paulo V. Santos

Appl. Phys. Lett. 74, 4002 (1999); http://dx.doi.org/10.1063/1.123241 (3 pages) | Cited 9 times

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The mapping of surface acoustic wave (SAW) fields by means of microscopic reflectance and reflectance anisotropy in GaAs-based structures is reported. The two techniques are complementary with the second being sensitive to the strain and the first both to the strain and to the surface modulation induced by the SAW. Their combination provides information about both the longitudinal and transverse components of the SAW particle displacement vector. © 1999 American Institute of Physics.
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77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
68.35.Gy Mechanical properties; surface strains
78.20.Jq Electro-optical effects
81.05.Ea III-V semiconductors

Theoretical modeling of thermoelectricity in Bi nanowires

X. Sun, Z. Zhang, and M. S. Dresselhaus

Appl. Phys. Lett. 74, 4005 (1999); http://dx.doi.org/10.1063/1.123242 (3 pages) | Cited 75 times

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A theoretical model based on the basic electronic band structure of bulk Bi is developed to predict the dependence of the band structure and thermoelectric properties on nanowire width. By carefully tailoring the Bi wire size and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small nanowire widths. © 1999 American Institute of Physics.
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73.50.Lw Thermoelectric effects
73.63.-b Electronic transport in nanoscale materials and structures
71.20.Gj Other metals and alloys
81.05.Bx Metals, semimetals, and alloys

Light-induced negative differential resistance in planar InP/InGaAs/InP double-heterojunction p-i-n photodiode

Chong-Long Ho, Meng-Chyi Wu, Wen-Jeng Ho, and Jy-Wang Liaw

Appl. Phys. Lett. 74, 4008 (1999); http://dx.doi.org/10.1063/1.123243 (3 pages) | Cited 4 times

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Negative differential resistance (NDR) was observed in the dc photocurrent-reverse bias characteristics at 1.55 μm wavelength of a planar InP/InGaAs/InP double-heterojunction p-i-n photodiode, which is designed for high-speed operation. In the bias range of measurements, two NDR regions can be observed, which are suggested to be mainly caused by the drop of average electron velocities in both the InGaAs absorption and InP buffer layers, i.e., the transferred electron effect. For providing evidence, power dependence of these NDR regions was investigated. Besides, another high-responsivity p-i-n photodiode was fabricated and characterized for comparison. © 1999 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
78.66.Fd III-V semiconductors
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