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28 Jun 1999

Volume 74, Issue 26, pp. 3921-4070

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Real-time monitoring of the Si carbonization process by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy

Ryoji Kosugi, Yuji Takakuwa, Ki-Seon Kim, Tadashi Abukawa, and Shozo Kono

Appl. Phys. Lett. 74, 3939 (1999); http://dx.doi.org/10.1063/1.124230 (3 pages) | Cited 9 times

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The carbonization process of a preferential-domain Si(001)2×1 surface with ethylene was investigated by a combined method of reflection high-energy electron diffraction and Auger electron spectroscopy. It is found that the carbonization process during the so-called incubation time is the Si1−xCx alloy formation before the nucleation of 3C–SiC grains. A reaction model for the Si1−xCx alloy formation and for the 3C–SiC grain growth is proposed for substrate temperatures of 600–750 °C. From the model, we postulate that the external supply of Si and C should be started just at the completion of the lateral 3C–SiC grain growth at temperatures of 600–650 °C in order to obtain thick 3C–SiC layers with a flat surface morphology. © 1999 American Institute of Physics.
Show PACS
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
81.05.Cy Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.20.Fv Electron impact: Auger emission
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

β-SiC nanorods synthesized by hot filament chemical vapor deposition

X. T. Zhou, N. Wang, H. L. Lai, H. Y. Peng, I. Bello, N. B. Wong, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 74, 3942 (1999); http://dx.doi.org/10.1063/1.124231 (3 pages) | Cited 76 times

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A one-step procedure has been developed to grow β-SiC nanorods from a solid carbon and silicon source on a Si substrate by hot filament chemical vapor deposition. This process is catalyzed by metallic particles which come from impurities in the solid source which is a plate made by pressing a mixture graphite and silicon powders at 150 °C. Hydrogen was introduced into the reaction chamber to react with the solid plate to produce hydrocarbon and hydrosilicon radicals which presumably reacted to form SiC nanorods. The nanorods consisted of a crystalline β-SiC core with an amorphous silicon oxide shell layer and grew along the [100] direction. The nanorods were 10–30 nm in diameter and less than 1 μm in length. © 1999 American Institute of Physics.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
81.05.Hd Other semiconductors

A method to produce reverse-mode polymer-dispersed liquid-crystal shutters

F. P. Nicoletta, G. De Filpo, J. Lanzo, and G. Chidichimo

Appl. Phys. Lett. 74, 3945 (1999); http://dx.doi.org/10.1063/1.124232 (3 pages) | Cited 18 times

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Reverse-mode operation shutters have been achieved by combining the techniques of the traditional means of making polymer-dispersed liquid crystals and nematic curvilinear aligned phases. Nematic microemulsions, obtained by a thermally induced phase separation, have been photopolymerized in an external force field. After the polymerization, films show 85% transmittance in the OFF state, while it decreases to less than 1% when an electric field of about 2 V μm−1 at 1 kHz is applied. The rise-time values, about 2 ms, are in the same range as those obtained with normal-mode polymer-dispersed liquid-crystal films. On the contrary, decay time shows longer values. © 1999 American Institute of Physics.  
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42.79.Ag Apertures, collimators
42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals
78.20.Jq Electro-optical effects
64.75.-g Phase equilibria
82.35.-x Polymers: properties; reactions; polymerization

Electron paramagnetic resonance of radiation defects in hydrogen-implanted silicon detected by spin-dependent microwave photoconductivity

R. Laiho, L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, and V. V. Kozlovski

Appl. Phys. Lett. 74, 3948 (1999); http://dx.doi.org/10.1063/1.124233 (3 pages) | Cited 3 times

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Electron paramagnetic resonance (EPR) spectra of radiation defects induced by low-energy protons (100 keV) in a thin near-surface layer (L<1 μm) of silicon crystals are detected with spin-dependent microwave photoconductivity. It is found that EPR spectra of the excited triplet states of oxygen+vacancy complexes and spectra related to carbon-containing defects are formed at low proton irradiation doses of about 2×1012–1013 cm−2. When the irradiation dose is increased from 1013 to 5×1013 cm−2, a fast decrease of the intensity of the detected EPR spectra takes place. This effect is explained by passivation of the radiation defects by hydrogen. © 1999 American Institute of Physics.
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76.30.Mi Color centers and other defects
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects
71.35.-y Excitons and related phenomena
72.80.Cw Elemental semiconductors
73.61.Cw Elemental semiconductors

Pulsed laser deposition of epitaxial GaNxAs1−x on GaAs

W. K. Hung, M. Y. Chern, J. C. Fan, T. Y. Lin, and Y. F. Chen

Appl. Phys. Lett. 74, 3951 (1999); http://dx.doi.org/10.1063/1.124234 (3 pages) | Cited 4 times

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Epitaxial layers of GaNxAs1−x were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia (NH3) atmosphere. High-resolution x-ray diffraction indicates the existence of a threshold NH3 pressure, above which the incorporated N content x increases linearly with increasing NH3 pressure. The band-gap dependence of GaNxAs1−x on x for x ⩽ 2.9% is examined by optical absorption and photoconductivity measurements at room temperature. We found that the band-gap energy reduces with higher N composition, and our results agree approximately with the prediction based on the dielectric model. © 1999 American Institute of Physics.
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81.15.Fg Pulsed laser ablation deposition
81.05.Ea III-V semiconductors
68.55.Nq Composition and phase identification

Coherent array of tungsten ultrafine particles by laser irradiation

Yuji Kawakami, Eiichi Ozawa, and Shinya Sasaki

Appl. Phys. Lett. 74, 3954 (1999); http://dx.doi.org/10.1063/1.124248 (3 pages) | Cited 5 times

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We found a coherent array of tungsten ultrafine particles of about 700 nm around a laser-irradiated mark on a single-crystalline surface of tungsten. The tungsten specimens were irradiated by a short-pulse Nd:YAG laser under low pressure in an inert gas atmosphere. Two types of coherent arrays were observed that included the two-dimensional cubic and hexagonal systems. Such a coherent array of ultrafine particles may have potential applications for emission devices of plasma display and microelectronic devices. © 1999 American Institute of Physics.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Bg Metals and alloys
81.05.Bx Metals, semimetals, and alloys

Transmission and photoluminescence images of three-dimensional memory in vitreous silica

Mitsuru Watanabe, Saulius Juodkazis, Hong-Bo Sun, Shigeki Matsuo, Hiroaki Misawa, Masafumi Miwa, and Reizo Kaneko

Appl. Phys. Lett. 74, 3957 (1999); http://dx.doi.org/10.1063/1.124235 (3 pages) | Cited 18 times

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We demonstrate separate readouts of three-dimensional memory by (i) transmission imaging using a conventional optical microscope and (ii) photoluminescence (PL) of the bits created by inducing optical damage within the vitreous silica. Recording was done by tightly focused (objective ×100, numerical aperture 1.3) single shot irradiation of 120 fs duration pulses at a 400 nm wavelength. For the readout, a broadband of PL at 470–600 nm was excited by 400 nm, 120 fs irradiation with pulse energy smaller by a factor of 106 compared with that for the recording. We found an erasing of the PL after 400 °C annealing, while the readability of the bits by the transmission was sustained. This shows the potential for two-bit information recording per single bit by means of separate readout procedures. © 1999 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
78.55.Hx Other solid inorganic materials

Optical properties of low-pressure metalorganic vapor phase epitaxy AlxGa1−xN thin-film waveguides by prism coupling technique

E. Dogheche, D. Remiens, and F. Omnes

Appl. Phys. Lett. 74, 3960 (1999); http://dx.doi.org/10.1063/1.124236 (3 pages) | Cited 8 times

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Epitaxial thin films of aluminum gallium nitride (AlxGa1−xN) were grown by low-pressure metalorganic vapor phase epitaxy on c-oriented sapphire substrates. The prism-coupling technique was carried out to determine the optical properties of Al0.17Ga0.93N thin films, i.e., the refractive index, the film thickness, and the optical loss. Optical transmission measurements were additionally used to determine the dispersion of the refractive index. A demonstration of optical waveguiding was successful in an AlGaN/AlN/sapphire planar structure, the optical propagation loss was determined to be around 1.8 dB cm−1 at 632.8 nm. An analysis of optical anisotropy using guided modes with the optical axis oriented normal to the film surface confirmed the uniaxial nature of the layer. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors

Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots

Kohki Mukai and Mitsuru Sugawara

Appl. Phys. Lett. 74, 3963 (1999); http://dx.doi.org/10.1063/1.124237 (3 pages) | Cited 38 times

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We found that the temperature sensitivity of interband emission energy was suppressed significantly in 1.3-μm-emitting self-assembled InGaAs/GaAs quantum dots by an InGaAs overgrowth on the dots. Transmission electron microscopy measurements indicated that lattice distortion was enhanced on dots in a 10-nm-thick InxGa1−xAs overgrowth layer. Photoluminescence spectra showed that the emission energy shift with increasing temperature was nearly negligible above 150 K when x ≥ 0.25. The shift between 4.2 and 200 K was less than half that of bulk GaAs when x = 0.3. The results reveal the potential of InGaAs-covered dots in realizing temperature-insensitive lasing wavelength of laser diodes by manipulating the three-dimensional strain distribution. © 1999 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.55.Px Semiconductor lasers; laser diodes

Mechanism for photon emission from Au nano-hemispheres induced by scanning tunneling microscopy

Yish-Hann Liau and Norbert F. Scherer

Appl. Phys. Lett. 74, 3966 (1999); http://dx.doi.org/10.1063/1.124238 (3 pages) | Cited 3 times

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The photon emission yield observed in scanning tunneling microscopy (STM) measurements of Au hemispheroid-decorated thin films is used to elucidate the interaction of tunneling electrons with local surface plasmon modes. The photon emission probability is found to depend on the surface feature size. The agreement of a model calculation with the experimental results demonstrates that inelastic electron tunneling is the dominant mechanism of STM-induced plasmon excitation for 10–60 nm size metallic features. © 1999 American Institute of Physics.
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78.60.Fi Electroluminescence
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
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