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11 Jan 1999

Volume 74, Issue 2, pp. 161-325

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A metal-free, full-color stacked organic light-emitting device

G. Gu, G. Parthasarathy, and S. R. Forrest

Appl. Phys. Lett. 74, 305 (1999); http://dx.doi.org/10.1063/1.123006 (3 pages) | Cited 38 times

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We report the demonstration of a transparent, completely metal-free, full-color stacked organic light-emitting device (SOLED). The SOLED emits light from both top and bottom (substrate) surfaces with total external quantum efficiencies of 0.65%, 1.3%, and 2.2% for the green, blue, and red stacked subpixels, respectively. The respective top emission quantum efficiencies for the three subpixels are 0.23%, 0.63%, and 1.6%. The angular dependence of emission colors due to microcavity effects is weak when viewed from the top device surface. This metal-free SOLED is from 21% to 50% transparent over the entire visible spectral range. Capability for top emission makes this device suitable for integration with electronic components in active matrix display backplanes. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Pg Display systems
78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics
78.40.Me Organic compounds and polymers

Visible light-emitting devices with Schottky contacts on an ultrathin amorphous silicon layer containing silicon nanocrystals

S. Fujita and N. Sugiyama

Appl. Phys. Lett. 74, 308 (1999); http://dx.doi.org/10.1063/1.123007 (3 pages) | Cited 33 times

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We have fabricated light-emitting diodes (LEDs) with Schottky contacts on a single ultrathin amorphous silicon (Si) layer containing Si nanocrystals formed by simple techniques as used for standard Si devices. Orange electroluminescence (EL) from these LEDs could be seen with the naked eye at room temperature when a reverse bias voltage was applied. The EL spectrum has a major peak with a photon energy of 1.9 eV and a minor peak with a photon energy of 2.2 eV. The operation voltage is reduced to 4.0−4.5 V, which is low enough to be applied to a standard Si transistor. © 1999 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Db Elemental semiconductors and insulators
78.66.Jg Amorphous semiconductors; glasses

Lateral confinement in a resonant tunneling transistor with a buried metallic gate

Lars-Erik Wernersson, Michihiko Suhara, Niclas Carlsson, Kazuhito Furuya, Boel Gustafson, Andrej Litwin, Lars Samuelson, and Werner Seifert

Appl. Phys. Lett. 74, 311 (1999); http://dx.doi.org/10.1063/1.123008 (3 pages) | Cited 5 times

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We have fabricated a resonant tunneling transistor by epitaxial overgrowth over a tungsten grating placed 30 nm above a GaAs/GaInP semiconductor, double barrier, resonant tunneling heterostructure. The Schottky depletion around the buried metal contacts controls the current to a vertical transistor channel. The lateral extension of this channel is defined by a square opening in the grating with a side length of 1.4 μm, which corresponds to a sub-μm electrical width. The transport properties at 20 K show a fine structure in the resonant tunneling characteristics, and it is affected by the gate bias. These effects are discussed in terms of lateral quantum confinement in the transistor channel defined. © 1999 American Institute of Physics.
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85.30.Tv Field effect devices
85.35.Ds Quantum interference devices

Unipolar complementary circuits using double electron layer tunneling transistors

J. S. Moon, J. A. Simmons, M. A. Blount, J. L. Reno, and M. J. Hafich

Appl. Phys. Lett. 74, 314 (1999); http://dx.doi.org/10.1063/1.123009 (3 pages) | Cited 7 times

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We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of two-dimensional–two-dimensional interlayer tunneling, where a single transistor—in addition to exhibiting a well-defined negative-differential resistance—can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and bandbending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series. © 1999 American Institute of Physics.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
84.30.Sk Pulse and digital circuits
85.35.Ds Quantum interference devices

Tunnel diodes fabricated from CdSe nanocrystal monolayers

S.-H. Kim, G. Markovich, S. Rezvani, S. H. Choi, K. L. Wang, and J. R. Heath

Appl. Phys. Lett. 74, 317 (1999); http://dx.doi.org/10.1063/1.123035 (3 pages) | Cited 15 times

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A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices. © 1999 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.23.Hk Coulomb blockade; single-electron tunneling
85.65.+h Molecular electronic devices
73.61.Ga II-VI semiconductors
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