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11 Jan 1999

Volume 74, Issue 2, pp. 161-325

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The ferroelectric properties of c-axis oriented Pb5Ge3O11 thin films prepared by metalorganic chemical vapor deposition

Tingkai Li, Fengyan Zhang, and Sheng Teng Hsu

Appl. Phys. Lett. 74, 296 (1999); http://dx.doi.org/10.1063/1.123955 (3 pages) | Cited 11 times

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C-axis oriented ferroelectric Pb5Ge3O11 thin films were prepared on Pt/Ir-coated Si wafers by metalorganic chemical vapor deposition (MOCVD) and rapid thermal process annealing techniques. The films were specular and crack free and showed complete crystallization with c-axis orientation for growth temperatures between 500 and 550 °C. Good ferroelectric properties were obtained for a 150-nm-thick film with Pt/Ir electrodes: the remanent polarization (2Pr) and coercive field (2Ec) values were about 3.8 μC/cm2 and 93 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1×109 switching cycles. The leakage current increased with increasing applied voltage, and is about 3.6×10−7 A/cm2 at 100 kV/cm. The dielectric constant showed behavior similar to most ferroelectric materials in that the dielectric constant changed with applied voltages. The maximum dielectric constant is about 45. High-quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices. © 1999 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.-a Thin film structure and morphology
77.22.Ch Permittivity (dielectric function)
61.72.Cc Kinetics of defect formation and annealing
77.22.Ej Polarization and depolarization
61.50.-f Structure of bulk crystals
77.80.Fm Switching phenomena

Origin of anomalous polarization offsets in compositionally graded Pb(Zr, Ti)O3 thin films

Mark Brazier, M. McElfresh, and Said Mansour

Appl. Phys. Lett. 74, 299 (1999); http://dx.doi.org/10.1063/1.123004 (3 pages) | Cited 34 times

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Ferroelectric films with composition gradients normal to the substrate have recently been reported to exhibit anomalously large polarization offsets when hysteresis loops are driven with an ac voltage and measured using a Sawyer–Tower (ST) circuit. These offsets have been reported in graded Pb(Zr, Ti)O3 (over 400 μC/cm2) and graded (Ba, Sr)TiO3 (30 μC/cm2) films. In this work, it was found that the offset observed in graded Pb(Zr, Ti)O3 films can be attributed to development of a dc voltage across the ac-voltage driven film, rather than a polarization offset. Recognition of this result reduces these previously reported offset values by a factor of Cs/Cref, where Cref and Cs are the reference and sample capacitances, respectively, used in the ST circuit. These dc-voltage offsets still represent a phenomenon which may lead to novel device applications. © 1999 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization

Frequency-dependent interface capacitance of Al–Al2O3–Al tunnel junctions

K. T. McCarthy, S. B. Arnason, and A. F. Hebard

Appl. Phys. Lett. 74, 302 (1999); http://dx.doi.org/10.1063/1.123005 (3 pages) | Cited 21 times

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Four-terminal ac impedance measurements have been used to characterize Al–Al2O3–Al tunnel-junction capacitors over the frequency range of 10 Hz–100 kHz. The insulating barriers are thin enough to assure that the response can be modeled by a frequency-dependent interface capacitance in parallel with a frequency-independent tunnel junction resistor R0. The data reveal no sign of loss peaks down to 10 Hz and the impedance curves for a single junction, annealed to give different tunnel-junction resistance, collapse onto a single curve when R0 is used as a scaling parameter. The loss mechanism is ascribed to interface traps and is found to give an unusual asymptotic phase angle response when the real and imaginary parts of the complex capacitance are plotted against each other. © 1999 American Institute of Physics.
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73.40.Rw Metal-insulator-metal structures
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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