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11 Jan 1999

Volume 74, Issue 2, pp. 161-325

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Picosecond ultrasonic study of Mo/Si multilayer structures using an alternating-pump technique

Nen-Wen Pu, Jeffrey Bokor, Seongtae Jeong, and Ri-An Zhao

Appl. Phys. Lett. 74, 320 (1999); http://dx.doi.org/10.1063/1.123010 (3 pages) | Cited 8 times

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We have used picosecond ultrasonics techniques to study the localized acoustic-phonon surface modes in Mo/Si multilayer reflectors for extreme ultraviolet lithography. Localized surface modes in the first (zone-boundary) and second (zone-center) gaps were simultaneously detected. Oscillation frequency as high as 0.873 THz was observed. An alternating-pump technique has been successfully demonstrated to enhance the signal-to-noise ratio by 10 dB. This technique can be used to improve the sensitivity for probing the surface modes in other multilayer thin-film structures. © 1999 American Institute of Physics.
Show PACS
68.35.Ja Surface and interface dynamics and vibrations
42.79.Wc Optical coatings
78.66.Bz Metals and metallic alloys
85.40.Hp Lithography, masks and pattern transfer
42.79.Bh Lenses, prisms and mirrors
63.20.Pw Localized modes
62.65.+k Acoustical properties of solids
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

A simple, reliable technique for making electrical contact to multiwalled carbon nanotubes

P. J. de Pablo, E. Graugnard, B. Walsh, R. P. Andres, S. Datta, and R. Reifenberger

Appl. Phys. Lett. 74, 323 (1999); http://dx.doi.org/10.1063/1.123011 (3 pages) | Cited 64 times

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A simple method of making reliable electrical contact to multiwalled carbon nanotubes is described. With these contacts, current in the mA range can be routinely passed through individual multiwalled nanotubes without adverse consequences, thus allowing their resistance to be measured using a common multimeter. The contacts are robust enough to withstand temperature excursions between room temperature and 77 K. I(V) data from different multiwalled nanotubes are presented and analyzed. © 1999 American Institute of Physics.
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73.61.Wp Fullerenes and related materials
85.65.+h Molecular electronic devices
73.40.Ns Metal-nonmetal contacts
72.80.Rj Fullerenes and related materials
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