APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

11 Jan 1999

Volume 74, Issue 2, pp. 161-325

Return to All Sections
back to top
RSS Feeds

Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices

N. N. Ledentsov, A. F. Tsatsul’nikov, A. Yu. Egorov, P. S. Kop’ev, A. R. Kovsh, M. V. Maximov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Zh. I. Alferov, I. L. Krestnikov, D. Bimberg, and A. Hoffmann

Appl. Phys. Lett. 74, 161 (1999); http://dx.doi.org/10.1063/1.123281 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We study the optical properties of structures composed of stacked InAs submonolayer insertions in an AlGaAs matrix grown on a GaAs(100) surface. The increased refractive index in the active region necessary for waveguiding is caused by the absorption peak due to excitons trapped by monolayer-height InAs islands. Despite a very low average InAs concentration, a thin AlGaAs buffer layer and an absorbing GaAs substrate photopumped lasing in the visible spectral range is already realized at low excitation density. © 1999 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Third-order optical nonlinearity of the carbon nanotubes

Xuchun Liu, Jinhai Si, Baohe Chang, Gang Xu, Qiguang Yang, Zhengwei Pan, Sishen Xie, Peixian Ye, Junhua Fan, and Meixiang Wan

Appl. Phys. Lett. 74, 164 (1999); http://dx.doi.org/10.1063/1.123282 (3 pages) | Cited 54 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Third-order optical nonlinearity of the carbon nanotubes was investigated with both 30-ps-wide and 8-ns-wide Nd:YAG laser beams. Both 1064 and 532 nm were used in each case. The nonlinear optical temporal response was obtained both on the picosecond scale and on the nanosecond scale, and the corresponding mechanism is discussed. Finally, we have compared the average contribution of one carbon atom to the third-order optical nonlinearity in the carbon nanotubes with that in C60, finding some enhancement of the third-order optical nonlinearity in the carbon nanotubes. © 1999 American Institute of Physics.  
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.An Optical susceptibility, hyperpolarizability
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.40.Ri Fullerenes and related materials

Pulse separation control for mode-locked far-infrared p-Ge lasers

A. V. Muravjov, R. C. Strijbos, C. J. Fredricksen, S. H. Withers, W. Trimble, S. G. Pavlov, V. N. Shastin, and R. E. Peale

Appl. Phys. Lett. 74, 167 (1999); http://dx.doi.org/10.1063/1.124221 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Active mode locking of the far-infrared p-Ge laser giving a train of 200 ps pulses is achieved via gain modulation by applying an rf electric field together with an additional bias at one end of the crystal parallel to the Voigt-configured magnetic field. Harmonic mode locking yields a train of pulse pairs with variable time separation from zero to half the roundtrip period, where pulse separation is electrically controlled by the external bias to the rf field. © 1999 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Three-dimensional optical circuitry using two-photon-assisted polymerization

Mukesh P. Joshi, Haridas E. Pudavar, J. Swiatkiewicz, P. N. Prasad, and B. A. Reianhardt

Appl. Phys. Lett. 74, 170 (1999); http://dx.doi.org/10.1063/1.123283 (3 pages) | Cited 49 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An approach using an as-formed solid bulk sample containing a blend of photocurable and thermally curable epoxies together with a highly efficient two-photon excitable fluorophore is demonstrated for in situ fabrication of three-dimensional optical circuitry with a precise control of dimension and spatial locations. Confocal volume images of a 1×2 splitter and a grating coupler are shown. End-fire coupling of a He–Ne laser beam into the 1×2 splitter has been achieved. © 1999 American Institute of Physics.
Show PACS
82.35.-x Polymers: properties; reactions; polymerization
82.50.-m Photochemistry
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

High-temperature continuous-wave operation of λ∼8 μm quantum cascade lasers

S. Slivken, A. Matlis, C. Jelen, A. Rybaltowski, J. Diaz, and M. Razeghi

Appl. Phys. Lett. 74, 173 (1999); http://dx.doi.org/10.1063/1.123284 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report single-mode continuous-wave operation of a λ∼8 μm quantum cascade laser at 140 K. The threshold current density is 4.2 kA/cm2 at 300 K in pulsed mode and 2.5 kA/cm2 at 140 K in continuous wave for 2 mm long index-guided laser cavities of 20 μm width. Wide stripe (W ∼ 100 μm), index-guided lasers from the same wafer in pulsed operation demonstrate an average T0 of 210 K with other wafers demonstrating a T0 as high as 290 K for temperatures from 80 to 300 K. This improvement in high-temperature performance is a direct result of three factors: excellent material quality, a low-loss waveguide design, and a low-leakage index-guided laser geometry. © 1999 American Institute of Physics.
Show PACS
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Pk Continuous operation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors

Threshold reduction in pierced microdisk lasers

S. A. Backes, J. R. A. Cleaver, A. P. Heberle, J. J. Baumberg, and K. Köhler

Appl. Phys. Lett. 74, 176 (1999); http://dx.doi.org/10.1063/1.123285 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
GaAs microdisk lasers with holes pierced through the disk surface are investigated for their threshold characteristics. Disks are fabricated with either a single hole or two diametrically opposite holes at various distances from the disk outer edge. Even though the disk area is reduced by only 1%, we find that the lasing threshold for a disk with one hole is reduced by up to 50% compared to a disk with no hole. We attribute this reduction to the perturbation of nonlasing modes, which decreases the amplification of spontaneous emission in these modes and makes more carriers available to contribute to lasing. © 1999 American Institute of Physics.
Show PACS
42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Experiments on the depolarization near-field scanning optical microscope

Ch. Adelmann, J. Hetzler, G. Scheiber, Th. Schimmel, M. Wegener, H. B. Weber, and H. v. Löhneysen

Appl. Phys. Lett. 74, 179 (1999); http://dx.doi.org/10.1063/1.122997 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the operation of an apparatus which we call the depolarization near-field scanning optical microscope. It delivers subwavelength resolution with uncoated optical fiber tips without the need for additional modulation techniques. We show that—in the near field—the edges perpendicular to the incident optical polarization are imaged. This dependence on the orientation of the linear polarization as well as the influence of small ellipticities of the polarization state on the imaging process are measured on a well-defined test sample. The transition from near- to far-field imaging as a function of the tip height is demonstrated. The results are in good agreement with recent theoretical predictions. © 1999 American Institute of Physics.
Show PACS
07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Visible and infrared rare-earth-activated electroluminescence from indium tin oxide Schottky diodes to GaN:Er on Si

M. Garter, J. Scofield, R. Birkhahn, and A. J. Steckl

Appl. Phys. Lett. 74, 182 (1999); http://dx.doi.org/10.1063/1.123286 (3 pages) | Cited 35 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Visible and infrared rare-earth-activated electroluminescence (EL) has been obtained from Schottky barrier diodes consisting of indium tin oxide (ITO) contacts on an Er-doped GaN layer grown on Si. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources for Ga, Mg, and Er and a plasma source for N2. RF-sputtered ITO was used for both diode electrodes. The EL spectrum shows two peaks at 537 and 558 nm along with several peaks clustered around 1550 nm. These emission lines correspond to atomic Er transitions to the 4I15/2 ground level and have narrow linewidths. The optical power varies linearly with reverse bias current. The external quantum and power efficiencies of GaN:Er visible light-emitting diodes have been measured, with values of 0.026% and 0.001%, respectively. Significantly higher performance is expected from improvements in the growth process, device design, and packaging. © 1999 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Intersubband absorption in boron-doped multiple Ge quantum dots

J. L. Liu, W. G. Wu, A. Balandin, G. L. Jin, and K. L. Wang

Appl. Phys. Lett. 74, 185 (1999); http://dx.doi.org/10.1063/1.123287 (3 pages) | Cited 50 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The intersubband absorption in self-assembled boron-doped multiple Ge quantum dots is observed. The structures used consist of 20 periods of boron-doped Ge dot layers and undoped Si barriers. The infrared absorption as a function of wavelength is measured by Fourier transform infrared spectroscopy using a waveguide geometry. Absorption peaks in the mid-infrared range have been observed, which are attributed to the transitions between the first two heavy hole states of the Ge quantum dots. The polarization dependence measurement is used to study the nature of the transitions. This observation suggests the possible use of multiple Ge quantum dots for infrared detector application. © 1999 American Institute of Physics.
Show PACS
78.66.Db Elemental semiconductors and insulators
78.30.Am Elemental semiconductors and insulators
85.60.Gz Photodetectors (including infrared and CCD detectors)

Optimization of active regions in midinfrared lasers

J. T. Olesberg, Michael E. Flatté, B. J. Brown, C. H. Grein, T. C. Hasenberg, S. A. Anson, and Thomas F. Boggess

Appl. Phys. Lett. 74, 188 (1999); http://dx.doi.org/10.1063/1.123288 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The ideal performance of bulk, quantum well, and superlattice active regions for III–V interband midinfrared lasers are compared according to the maximum net gain per unit current density. Based on this figure of merit, which is appropriate for high-power as well as near-threshold operation, InAsSb quantum well active regions should have an order of magnitude lower threshold current than bulk InAs at room temperature. Optimized four-layer superlattices based on the InAs/GaInSb material system, however, should have two to ten times lower threshold currents than the quantum well active regions. Optimal thicknesses for these active regions were evaluated assuming a separate confinement region design. For the four-layer superlattices the optimal thickness is substantially thinner than has been commonly grown: 3 periods rather than 40 periods. © 1999 American Institute of Physics.
Show PACS
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close