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18 Jan 1999

Volume 74, Issue 3, pp. 329-478

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Band gap energy in nanocrystalline ZrO2:16%Y thin films

Igor Kosacki, Vladimir Petrovsky, and Harlan U. Anderson

Appl. Phys. Lett. 74, 341 (1999); http://dx.doi.org/10.1063/1.123065 (3 pages) | Cited 53 times

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The results of optical absorption measurements on nanocrystalline ZrO2:16%Y thin films are presented. Dense 0.7 μm thick films with 1–300 nm grain size have been obtained on sapphire substrate using a polymeric precursor spin coating technique. The relationship between the energy gap and microstructure of ZrO2:16%Y has been determined and discussed. The quantum confinement effect was observed at the grain size lower than 100 nm with the band gap energy shift of 0.25 eV when the microstructure was changed up to 1 nm. Some limitation of the model has been observed and discussed. The band gap energy of 5.62±0.05 eV has been determined as microstructure independent value. © 1999 American Institute of Physics.
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71.20.Ps Other inorganic compounds
78.66.Nk Insulators
78.40.Ha Other nonmetallic inorganics

High birefringence and wide nematic range bis-tolane liquid crystals

Shin-Tson Wu, C.-S. Hsu, and K.-F. Shyu

Appl. Phys. Lett. 74, 344 (1999); http://dx.doi.org/10.1063/1.123066 (3 pages) | Cited 39 times

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Several dialkyl and fluoro bis-tolane liquid crystals were synthesized and their physical properties evaluated. These highly conjugated liquid crystals exhibit a wide nematic range, small heat fusion enthalpy, high birefringence, and relatively low viscosity. Their excellent compatibility with commercial cyano mixtures makes these liquid crystals attractive for many electro-optic applications. © 1999 American Institute of Physics.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Fm Birefringence
66.20.-d Viscosity of liquids; diffusive momentum transport
64.70.M- Transitions in liquid crystals

Influence of dynamical scattering in crystalline poly(vinylidene fluoride-trifluoroethylene) copolymers

C. N. Borca, Jaewu Choi, Shireen Adenwalla, Stephen Ducharme, P. A. Dowben, Lee Robertson, V. M. Fridkin, S. P. Palto, and N. Petukhova

Appl. Phys. Lett. 74, 347 (1999); http://dx.doi.org/10.1063/1.123067 (3 pages) | Cited 20 times

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The effective Debye temperature of poly(vinylidene fluoride-trifluoroethylene) copolymers was measured using photoemission and neutron diffraction techniques. An effective Debye temperature of 53±11 K is obtained from the photoemission data and 69±3.5 K from neutron diffraction measurements. This effective Debye temperature is a consequence of the temperature-dependent dynamic motions perpendicular to the surface of these crystalline polymer films. © 1999 American Institute of Physics.
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61.41.+e Polymers, elastomers, and plastics
68.18.-g Langmuir-Blodgett films on liquids
78.66.Qn Polymers; organic compounds

Sixfold-coordinated carbon as a postdiamond phase

T. Sekine

Appl. Phys. Lett. 74, 350 (1999); http://dx.doi.org/10.1063/1.123068 (3 pages) | Cited 7 times

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Carbon behavior at extremely high pressures, which at present cannot be investigated by direct experiments, was evaluated based on high-pressure experimental results on various SiC and NaCl-type carbides. Sixfold-coordinated carbon C(VI) was determined to be the most probable candidate for the postdiamond phase. Taking into account structural variations in the corresponding metals, the volume of C(VI) is estimated to be 3.08 cm3/mol at ambient conditions and 2.8 cm3/mol at pressures of 100–250 GPa. The postdiamond phase of C(VI) may display a greater zero-pressure bulk modulus than diamond. © 1999 American Institute of Physics.
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61.66.Bi Elemental solids
62.50.-p High-pressure effects in solids and liquids
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Direct evidence of micropipe-related pure superscrew dislocations in SiC

X. R. Huang, M. Dudley, W. M. Vetter, W. Huang, S. Wang, and C. H. Carter

Appl. Phys. Lett. 74, 353 (1999); http://dx.doi.org/10.1063/1.123069 (3 pages) | Cited 41 times

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A set of powerful x-ray imaging techniques using white-beam synchrotron radiation have been developed and applied to clearly reveal and map micropipes in SiC crystals at a “magnified” level. The experimental results and the corresponding simulations demonstrate explicitly that the micropipes are pure superscrew dislocations (SSDs). Moreover, these techniques provide accurate descriptions of the detailed structure of the SSDs, including the spatial distribution of the strain fields, the magnitudes of the Burgers vectors, the dislocation senses, and the surface relaxation effects. © 1999 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Stress evolution during metalorganic chemical vapor deposition of GaN

S. Hearne, E. Chason, J. Han, J. A. Floro, J. Figiel, J. Hunter, H. Amano, and I. S. T. Tsong

Appl. Phys. Lett. 74, 356 (1999); http://dx.doi.org/10.1063/1.123070 (3 pages) | Cited 100 times

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The evolution of stress in gallium nitride films on sapphire has been measured in real time during metalorganic chemical vapor deposition. In spite of the 16% compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in tension at 1050 °C. Furthermore, in situ stress monitoring indicates that there is no measurable relaxation of the tensile growth stress during annealing or thermal cycling. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties

Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy

F. Bertram, T. Riemann, J. Christen, A. Kaschner, A. Hoffmann, C. Thomsen, K. Hiramatsu, T. Shibata, and N. Sawaki

Appl. Phys. Lett. 74, 359 (1999); http://dx.doi.org/10.1063/1.123071 (3 pages) | Cited 70 times

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Epitaxial lateral overgrowth GaN structures oriented along the 〈11math0〉 direction were comprehensively characterized by cathodoluminescence (CL) microscopy and micro-Raman spectroscopy. CL microscopy directly visualizes the significant differences between the overgrown areas on top of the SiO2 mask and the coherently grown regions between the SiO2 stripes in quantitative correlation with micro-Raman spectroscopy mapping of the local strain and free carrier concentration. The overgrown GaN shows a partial strain relaxation and a high carrier concentration that strongly broadens the luminescence. A strong impurity incorporation is evidenced in the coalescence regions. In contrast, the local luminescence from the areas of coherent (0001) growth is dominated by narrow excitonic emission, demonstrating the superior crystalline quality. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.60.Hk Cathodoluminescence, ionoluminescence
78.30.Fs III-V and II-VI semiconductors

Structural properties and Raman modes of zinc blende InN epitaxial layers

A. Tabata, A. P. Lima, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, V. Lemos, B. Schöttker, T. Frey, D. Schikora, and K. Lischka

Appl. Phys. Lett. 74, 362 (1999); http://dx.doi.org/10.1063/1.123072 (3 pages) | Cited 50 times

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We report on x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films. The samples were grown by molecular beam epitaxy on GaAs(001) substrates using a InAs layer as a buffer. The transverse-optical (TO) and longitudinal-optical phonon frequencies at Γ of c-InN are determined and compared to the corresponding values for c-GaN. Ab initio self-consistent calculations are carried out for the c-InN and c-GaN lattice parameters and TO phonon frequencies. A good agreement between theory and experiment is found. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study

M. F. Wu, A. Vantomme, S. M. Hogg, G. Langouche, W. Van der Stricht, K. Jacobs, and I. Moerman

Appl. Phys. Lett. 74, 365 (1999); http://dx.doi.org/10.1063/1.123032 (3 pages) | Cited 22 times

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An InGaN layer was grown by metalorganic chemical vapor deposition on a sapphire (0001) substrate using a thick (>2.2 μm) GaN intermediate layer. The In composition, which cannot be unambiguously determined by x-ray diffraction (XRD) or by photoluminescence, was determined by Rutherford backscattering (RBS). The perpendicular and parallel elastic strain of the In0.18Ga0.82N layer, e⊥ = +0.21% and e∥ = −0.53%, respectively, were derived using a combination of XRD and RBS/channeling. The small ratio ∣e⊥/e∥∣ = 0.40 indicates that the In0.18Ga0.82N layer is much stiffer in the c-axis direction than in the a-axis direction. © 1999 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
62.20.F- Deformation and plasticity
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Enhanced electro-optic poling in guest–host systems using conductive polymer-based cladding layers

James P. Drummond, Stephen J. Clarson, John S. Zetts, F. Kenneth Hopkins, and Stephen J. Caracci

Appl. Phys. Lett. 74, 368 (1999); http://dx.doi.org/10.1063/1.123073 (3 pages) | Cited 12 times

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We report on the development of conductive polymer-based cladding layers for use in multilayered electro-optic (EO) device structures. The waveguide claddings used in these studies were based on blends formed from the conductive polymer poly (ethylene dioxythiophene) with poly (vinylalcohol). Thin films of the blended materials were spun to form cladding layers having tunable conductivity and optical absorption. We tested these materials using a well-known guest–host core layer to determine their effect on the polar alignment of second order nonlinear optical chromophores. The claddings tested were shown to provide a large effective poling field across the active layer, and thus produced larger EO coefficients than systems having comparable, but more highly resistive, claddings. © 1999 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.20.Jq Electro-optical effects
77.22.Ej Polarization and depolarization
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
73.61.Ph Polymers; organic compounds
68.55.-a Thin film structure and morphology
42.65.-k Nonlinear optics

Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques

Kimon C. Palinginis, Yoram Lubianiker, J. David Cohen, Adelina Ilie, Britta Kleinsorge, and William I. Milne

Appl. Phys. Lett. 74, 371 (1999); http://dx.doi.org/10.1063/1.123074 (3 pages) | Cited 7 times

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Junction capacitance measurements performed on tetrahedrally bonded amorphous carbon (ta-C)/crystalline-Si (c-Si) heterostructures are used to deduce the defect density in thin ta-C films. Using the drive level capacitance profiling technique, we determine a homogeneous defect density of 6±1.5×1017 cm−3 in the undoped (p-type) ta-C films and one order of magnitude larger in the nitrogen-doped (n-type) films. Admittance measurements reveal defect states at the ta-C/c-Si interface with a density exceeding 2×1012 cm−2. © 1999 American Institute of Physics.
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61.43.Dq Amorphous semiconductors, metals, and alloys
81.05.Gc Amorphous semiconductors
81.05.Cy Elemental semiconductors
68.55.-a Thin film structure and morphology
71.55.Cn Elemental semiconductors
73.61.Cw Elemental semiconductors
71.55.Jv Disordered structures; amorphous and glassy solids
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Jc Amorphous semiconductors; glasses

“Compliant” twist-bonded GaAs substrates: The potential role of pinholes

P. Kopperschmidt, St. Senz, R. Scholz, and U. Gösele

Appl. Phys. Lett. 74, 374 (1999); http://dx.doi.org/10.1063/1.123075 (3 pages) | Cited 21 times

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By twist wafer bonding, thin (100) GaAs layers were transferred onto (100) GaAs handling wafers in order to fabricate structures like those suggested in the literature as “compliant universal substrates.” Heteroepitaxial InP and InGaAs films were grown on the GaAs twist-bonded layers. Twisted and untwisted grains of the epitaxial film with diameters from 0.1 to several μm without threading dislocations were observed by transmission electron microscopy. Twisted grains grew on the twist-bonded layer, while the untwisted grains grew directly on the GaAs handling wafer and were caused by pinholes in the twist-bonded GaAs layer. It is suggested that the lateral limitation of the epitaxial growth of grains on the thin twisted GaAs layer caused by the presence of pinholes reduces the density of threading dislocations in the strain-relaxed film and might be a mechanism for the observed low density of threading dislocations in lattice-mismatched epitaxial films grown on twist-bonded “compliant universal substrates.” © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Time response of 1.54 μm emission from highly Er-doped nanocrystalline Si thin films prepared by laser ablation

Shuji Komuro, Tooru Katsumata, Takitaro Morikawa, Xinwei Zhao, Hideo Isshiki, and Yoshinobu Aoyagi

Appl. Phys. Lett. 74, 377 (1999); http://dx.doi.org/10.1063/1.123076 (3 pages) | Cited 28 times

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Er-doped nanocrystalline Si thin films have been controllably prepared over the Er density of 1019–1021 cm−3 using a prescribed amount of Er in a bulk target by laser ablation. Intense photoluminescence at 1.54 μm originating from intra-4f shell transitions in Er3+ ions has been observed. The increase of Er density cannot immediately result in a linear increase in Er3+-emission intensity. The time response measurement indicated that the change in the rise time of the Er3+ emission directly shows that Er3+ ions are excited by the energy transfer associated with the recombination of electron–hole pairs generated optically in the Si host. We found that the decrease of the excitation efficiency of Er3+ ions was responsible for the suppression of the Er3+-emission intensity in highly Er-doped nanocrystalline Si thin films. © 1999 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
71.55.Cn Elemental semiconductors

Structural and optical properties of InSb epitaxial films grown on GaAs(100) substrates at low temperature

T. W. Kim, H. C. Bae, and H. L. Park

Appl. Phys. Lett. 74, 380 (1999); http://dx.doi.org/10.1063/1.123077 (3 pages) | Cited 4 times

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Transmission electron microscopy (TEM) and reflectance measurements were carried out to investigate the structural and the optical properties of the InSb/GaAs heterostructures grown at low temperature (∼290 °C) for the possible use in fabricating CdTe/InSb quantum structures on GaAs substrates. X-ray diffraction measurements showed that the grown InSb layer was an epitaxial film, and TEM measurements indicated that the lattice mismatch between InSb and GaAs generated the formation of plane defects in the InSb epilayer near the InSb/GaAs heterointerface. When a 0.2 μm InSb layer was grown on the GaAs substrate, the InSb layer could be used as a defect-free substrate. Reflectance measurements showed the InSb longitudinal optical phonon. Structural and optical properties of the InSb/GaAs heterostructures were strongly affected by the growth temperature. These results indicate that the InSb buffer layer grown at low temperature, by eliminating the defects due to the lattice mismatch, plays an important role in the growth of CdTe/InSb quantum structures on GaAs substrates. © 1999 American Institute of Physics.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
61.72.Nn Stacking faults and other planar or extended defects
68.35.Ct Interface structure and roughness

Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

K. Tachibana, T. Someya, and Y. Arakawa

Appl. Phys. Lett. 74, 383 (1999); http://dx.doi.org/10.1063/1.123078 (3 pages) | Cited 95 times

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We have successfully grown nanometer-scale InGaN self-assembled quantum dots (QDs) on a GaN surface without any surfactants, using atmospheric-pressure metalorganic chemical vapor deposition. Atomic force microscopy shows that the average diameter of InGaN QDs is as small as 8.4 nm. Next, we have investigated the dependence of the QDs properties on the growth conditions: the amount of InGaN deposited and the growth temperature. Moreover, we have investigated the optical property of InGaN QDs, so that the strong emission was seen at 2.86 eV at room temperature. © 1999 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Ultraviolet emission of silicon quantum tips

W. H. Zheng, Jian-bai Xia, S. D. Lam, K. W. Cheah, M. R. Rakhshandehroo, and S. W. Pang

Appl. Phys. Lett. 74, 386 (1999); http://dx.doi.org/10.1063/1.123079 (3 pages) | Cited 2 times

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Silicon tips used as field emitters have dimensions that are within the quantum confinement regime. Therefore they can be considered as freestanding silicon tips. In this letter, a photoluminescence spectrum of a 100×100 array of silicon tips was taken at 10 K. Narrow ultraviolet luminescence peaks were observed. Using the empirical pseudopotential homojunction model, it is demonstrated that these luminescence peaks come from energy levels arising from quantum confinement. By fitting the theoretical result to the experimental result, we conclude that the luminescence peaks come from Si quantum tips of about 20 Å in width and that they are covered by silicon dioxide. © 1999 American Institute of Physics.
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73.23.-b Electronic transport in mesoscopic systems
78.40.Fy Semiconductors
78.66.Db Elemental semiconductors and insulators
79.70.+q Field emission, ionization, evaporation, and desorption
78.55.Ap Elemental semiconductors

Strong- and nondegrading-luminescent porous silicon prepared by hydrothermal etching

Xin Jian Li, De Liang Zhu, Qian Wang Chen, and Yu Heng Zhang

Appl. Phys. Lett. 74, 389 (1999); http://dx.doi.org/10.1063/1.123080 (3 pages) | Cited 13 times

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Porous silicon (PS) with strong and nondegrading photoluminescence (PL) is prepared by iron-passivating hydrothermal etching. The PL peak intensity of freshly as-prepared PS is as ∼2 times strong as that of conventionally anodized PS. This peak intensity reaches a saturation after the samples are annealed at 120 °C for ∼3 h, which is ∼2.5 times strong as that of freshly prepared samples. Exposing the annealed samples to air for ten months, no degradation of the PL intensity occurs and the peak energy remains constant all through the period. Microstructural studies disclose that the participation of iron ions in the hydrothermal process is crucial to the generation of the high-density silicon nanocrystallites and the construction of the solid surface passivation. These two structural properties are responsible for the strong and nondegrading PL of as-prepared PS. © 1999 American Institute of Physics.
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78.55.Mb Porous materials
81.05.Rm Porous materials; granular materials
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
78.55.Ap Elemental semiconductors
61.72.Cc Kinetics of defect formation and annealing
81.65.Rv Passivation
68.35.B- Structure of clean surfaces (and surface reconstruction)

The contribution of vacancies to carbon out-diffusion in silicon

R. F. Scholz, P. Werner, U. Gösele, and T. Y. Tan

Appl. Phys. Lett. 74, 392 (1999); http://dx.doi.org/10.1063/1.123081 (3 pages) | Cited 39 times

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Diffusion of carbon is mostly assumed to be governed by carbon interstitials via the kick-out mechanism. Carbon in-diffusion experiments are associated with thermal equilibrium concentrations of point defects, whereas in the case of carbon out-diffusion a remarkable undersaturation of Si self-interstitials may develop provided the carbon concentration is several orders of magnitude over its solubility value. New carbon out-diffusion experiments demonstrate that this model qualitatively describes the observed carbon diffusion profiles. However, we demonstrate that an accurate description of the experimental profiles is only possible if the Frank–Turnbull mechanism, involving vacancies, is additionally taken into account. Detailed investigations of carbon and boron profiles in the same sample can be used to determine the splitting of the known vacancy component of the silicon self-diffusion coefficient into the vacancy diffusion coefficient and the vacancy thermal equilibrium concentration at 900 °C. © 1999 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.S- Impurities in crystals
61.72.J- Point defects and defect clusters
66.30.H- Self-diffusion and ionic conduction in nonmetals

Experimental observation of two-dimensional electron gas in the CdS quantum wells of CdS/ZnSe heterostructures

V. Kažukauskas, M. Grün, St. Petillon, A. Storzum, and C. Klingshirn

Appl. Phys. Lett. 74, 395 (1999); http://dx.doi.org/10.1063/1.123042 (3 pages) | Cited 2 times

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We report the observation of a two-dimensional electron gas (2DEG) in the CdS quantum wells of CdS/ZnSe quantum heterostructures grown by molecular beam epitaxy. The CdS layers are about 4 nm thick; the thicknesses of the ZnSe-doped layers and the growth temperatures of the heterostructures were varied in order to investigate their influence on the 2DEG parameters. The effective sheet concentration of the 2DEGs reached up to 1.5×1013 cm−2. The maximal Hall mobilities were nevertheless still inferior or equal to 380 cm2/V s. Possible scattering mechanisms that cause such low values are discussed. Most probably, it is scattering by stacking faults or by interface roughness. © 1999 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Hf II-VI semiconductors
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