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18 Jan 1999

Volume 74, Issue 3, pp. 329-478

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Change in electromechanical properties of 0.9PMN:0.1PT relaxor ferroelectric induced by uniaxial compressive stress directed perpendicular to the electric field

J. Zhao, A. E. Glazounov, and Q. M. Zhang

Appl. Phys. Lett. 74, 436 (1999); http://dx.doi.org/10.1063/1.123053 (3 pages) | Cited 36 times

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It was shown that the uniaxial compressive stress applied perpendicular to the electric field strongly changes the dielectric and electromechanical properties of relaxor ferroelectric 0.9PMN:0.1PT at temperatures around its dielectric constant maximum, Tm. This includes: (i) a shift of the temperature of the electric field induced phase transition into the ferroelectric state and a depoling temperature to higher values which brings a large hysteresis in the material response to the electric field, and (ii) the symmetry breaking in the plane perpendicular to the direction of the electric field (3-axis). Using this symmetry breaking, from the ratio of the effective piezoelectric coefficients in the field biased state, d32/d31, the size of the micropolar regions at temperatures near Tm was estimated. © 1999 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
77.65.Bn Piezoelectric and electrostrictive constants

Dielectric properties of fullerene films

J. S. Su, Y. F. Chen, and K. C. Chiu

Appl. Phys. Lett. 74, 439 (1999); http://dx.doi.org/10.1063/1.123054 (3 pages) | Cited 3 times

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We report the study on the dielectric properties of C60 films by means of capacitance and dissipation factor measurements at temperatures between 5 and 325 K. In addition to the structural phase transition at 260 K, we have observed a clear anomaly at T = 90 K, which did not show up in previous dielectric studies. This result confirms the fact that a glass transition exists due to the freezing in of orientational disorder in C60. A Debye-like relaxation in the dielectric response has also been observed, and the relaxation rate is thermally activated with an energy of about 277 meV, which is in good agreement with that obtained from other measurements. © 1999 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
64.70.K- Solid-solid transitions
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
77.22.Gm Dielectric loss and relaxation
68.55.-a Thin film structure and morphology
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